公开(公告)号：US20060063368A1

公开(公告)日：2006-03-23

申请号：US10943559

申请日：2004-09-17

Applicant: Shashank Sharma

Inventor： Shashank Sharma

IPC: H01L21/4763

CPC classification number: G03F7/0002 ,  B81C99/009 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  Y10T428/31612

Abstract: Nano-scale devices and methods provide reduced feature dimensions of features on the devices. A surface of a device substrate having a pattern of spaced apart first nanowires is consumed, such that a dimension of the first nanowires is reduced. A second nanowire is formed in a trench or gap between adjacent ones of the first nanowires, such that the nano-scale device includes a set of features that includes the first nanowires with the reduced dimension and the second nanowire spaced from the adjacent first nanowires by sub-trenches.

Abstract translation: 纳米级设备和方法可以减少设备上特征的特征尺寸。 具有间隔开的第一纳米线的图案的器件衬底的表面被消耗，使得第一纳米线的尺寸减小。 第二纳米线形成在相邻的第一纳米线之间的沟槽或间隙中，使得纳米级器件包括一组特征，其包括具有减小的尺寸的第一纳米线，并且第二纳米线与相邻的第一纳米线间隔开，第二纳米线通过 小壕沟

公开(公告)号：US20090236588A1

公开(公告)日：2009-09-24

申请号：US12476671

申请日：2009-06-02

Applicant: Shashank Sharma ,  Theodore I Kamins

Inventor： Shashank Sharma ,  Theodore I Kamins

IPC: H01L29/66

CPC classification number: H01L29/045 ,  A01H5/10 ,  B81C1/00095 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647 ,  H01L21/02653 ,  H01L21/28525 ,  H01L21/76838 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A nanowire-based device includes the pair of isolated electrodes and a nanowire bridging between respective surfaces of the isolated electrodes of the pair. Specifically, the nanowire-based device having isolated electrodes comprises: a substrate electrode having a crystal orientation; a ledge electrode that is an epitaxial semiconductor having the crystal orientation of the substrate electrode; and a nanowire bridging between respective surfaces of the substrate electrode and the ledge electrode.

Abstract translation: 基于纳米线的器件包括一对隔离电极和在该对的隔离电极的各个表面之间桥接的纳米线。 具体地说，具有隔离电极的纳米线基器件包括：具有晶体取向的衬底电极; 作为具有基板电极的晶体取向的外延半导体的凸缘电极; 以及在基板电极和凸缘电极的各个表面之间桥接的纳米线。

公开(公告)号：US07445671B2

公开(公告)日：2008-11-04

申请号：US10869489

申请日：2004-06-16

Applicant: Mahendra Kumar Sunkara ,  Shashank Sharma ,  Burtron H. Davis ,  Uschi M. Graham

Inventor： Mahendra Kumar Sunkara ,  Shashank Sharma ,  Burtron H. Davis ,  Uschi M. Graham

IPC: C30B21/02

CPC classification number: C30B29/16 ,  B82Y30/00 ,  C30B11/06 ,  C30B29/60

Abstract: A method of producing networks of low melting metal oxides such as crystalline gallium oxide comprised of one-dimensional nanostructures. Because of the unique arrangement of wires, these crystalline networks defined as “nanowebs”, “nanowire networks”, and/or “two-dimensional nanowires”. Nanowebs contain wire densities on the order of 109/cm2. A possible mechanism for the fast self-assembly of crystalline metal oxide nanowires involves multiple nucleation and coalescence via oxidation-reduction reactions at the molecular level. The preferential growth of nanowires parallel to the substrate enables them to coalesce into regular polygonal networks. The individual segments of the polygonal network consist of both nanowires and nanotubules of β-gallium oxide. The synthesis of highly crystalline noncatalytic low melting metals such as β-gallium oxide tubes, nanowires, and nanopaintbrushes is accomplished using molten gallium and microwave plasma containing a mixture of monoatomic oxygen and hydrogen. Gallium oxide nanowires were 20-100 nm thick and tens to hundreds of microns long. Transmission electron microscopy (TEM) revealed the nanowires to be highly crystalline and devoid of any structural defects. Results showed that multiple nucleation and growth of gallium oxide nanostructures can occur directly out of molten gallium exposed to appropriate composition of hydrogen and oxygen in the gas phase. The method of producing nanowebs is extendible to other low melting metals and their oxides such as for example: zinc oxide, tin oxide, aluminum oxide, bismuth oxide, and titanium dioxide.

Abstract translation: 一种生产由一维纳米结构构成的低熔点金属氧化物如结晶镓氧化物的网络的方法。 由于电线的独特布置，这些晶体网络被定义为“纳米线”，“纳米线网络”和/或“二维纳米线”。 纳米线含有10 9 / cm 2以上的线密度。 结晶金属氧化物纳米线的快速自组装的可能机制涉及通过在分子水平上的氧化 - 还原反应的多个成核和聚结。 平行于衬底的纳米线的优先生长使它们能够聚结成规则的多边形网络。 多边形网络的各个部分由β氧化镓的纳米线和纳米管构成。 使用含有单原子氧和氢的混合物的熔融镓和微波等离子体来实现高结晶非催化低熔点金属如β-氧化镓管，纳米线和纳米管的合成。 氧化镓纳米线的厚度为20-100nm，数十至数百微米。 透射电子显微镜（TEM）显示纳米线是高度结晶的，没有任何结构缺陷。 结果表明，氧化镓纳米结构的多次成核和生长可以直接从暴露于气相中氢和氧的合适组成的熔融镓中发生。 制造纳米线的方法可以扩展到其它低熔点金属及其氧化物，例如氧化锌，氧化锡，氧化铝，氧化铋和二氧化钛。

公开(公告)号：US20080237568A1

公开(公告)日：2008-10-02

申请号：US11730486

申请日：2007-04-02

Applicant: Nobuhiko Kobayashi ,  Wei Wu ,  Duncan R. Stewart ,  Shashank Sharma ,  Shih-Yuan Wang ,  R. Stanley Williams

Inventor： Nobuhiko Kobayashi ,  Wei Wu ,  Duncan R. Stewart ,  Shashank Sharma ,  Shih-Yuan Wang ,  R. Stanley Williams

IPC: H01L29/06 ,  H01L21/20

CPC classification number: H01L31/035281 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L31/036 ,  H01L31/09 ,  H01L31/101 ,  H01L31/105 ,  Y02E10/50 ,  Y10S977/762 ,  Y10S977/814

Abstract: Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures that include one or more nanowires are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure.

Abstract translation: 公开了制备具有受控尺寸的纳米级半导体结构的方法。 还公开了包括一个或多个纳米线的半导体结构。 纳米线可以包括钝化层或具有中空管结构。

公开(公告)号：US20080093693A1

公开(公告)日：2008-04-24

申请号：US11584148

申请日：2006-10-20

Applicant: Theodore I. Kamins ,  Shashank Sharma ,  Philip J. Kuekes

Inventor： Theodore I. Kamins ,  Shashank Sharma ,  Philip J. Kuekes

IPC: H01L29/84

CPC classification number: A61B5/05 ,  A61B5/14546

Abstract: A nanowire sensor is operable to detect one or more species. The nanowire sensor includes a nanowire having a plurality of variant selectively interactive segments. Each of the variant selectively interactive segments are configured to simultaneously interact with the species to modulate the conductance of the nanowire for detecting the species.

Abstract translation: 纳米线传感器可操作以检测一种或多种物质。 纳米线传感器包括具有多个变体选择性交互部分的纳米线。 每个变体选择性交互节段被配置为与物种同时相互作用以调节用于检测物种的纳米线的电导。

公开(公告)号：US20070209576A1

公开(公告)日：2007-09-13

申请号：US10869489

申请日：2004-06-16

Applicant: Mahendra Sunkara ,  Shashank Sharma ,  Burtron Davis ,  Uschi Graham

Inventor： Mahendra Sunkara ,  Shashank Sharma ,  Burtron Davis ,  Uschi Graham

IPC: C30B25/00 ,  C30B23/00 ,  C30B28/12

CPC classification number: C30B29/16 ,  B82Y30/00 ,  C30B11/06 ,  C30B29/60

Abstract: A method of producing networks of low melting metal oxides such as crystalline gallium oxide comprised of one-dimensional nanostructures. Because of the unique arrangement of wires, these crystalline networks defined as “nanowebs”, “nanowire networks”, and/or “two-dimensional nanowires”. Nanowebs contain wire densities on the order of 109/cm2. A possible mechanism for the fast self-assembly of crystalline metal oxide nanowires involves multiple nucleation and coalescence via oxidation-reduction reactions at the molecular level. The preferential growth of nanowires parallel to the substrate enables them to coalesce into regular polygonal networks. The individual segments of the polygonal network consist of both nanowires and nanotubules of β-gallium oxide. The synthesis of highly crystalline noncatalytic low melting metals such as β-gallium oxide tubes, nanowires, and nanopaintbrushes is accomplished using molten gallium and microwave plasma containing a mixture of monoatomic oxygen and hydrogen. Gallium oxide nanowires were 20-100 nm thick and tens to hundreds of microns long. Transmission electron microscopy (TEM) revealed the nanowires to be highly crystalline and devoid of any structural defects. Results showed that multiple nucleation and growth of gallium oxide nanostructures can occur directly out of molten gallium exposed to appropriate composition of hydrogen and oxygen in the gas phase. The method of producing nanowebs is extendible to other low melting metals and their oxides such as for example: zinc oxide, tin oxide, aluminum oxide, bismuth oxide, and titanium dioxide.

Abstract translation: 一种生产由一维纳米结构构成的低熔点金属氧化物如结晶镓氧化物的网络的方法。 由于电线的独特布置，这些晶体网络被定义为“纳米线”，“纳米线网络”和/或“二维纳米线”。 纳米线含有10 9 / cm 2以上的线密度。 结晶金属氧化物纳米线的快速自组装的可能机制涉及通过在分子水平上的氧化 - 还原反应的多个成核和聚结。 平行于衬底的纳米线的优先生长使它们能够聚结成规则的多边形网络。 多边形网络的各个部分由β氧化镓的纳米线和纳米管构成。 使用含有单原子氧和氢的混合物的熔融镓和微波等离子体来实现高结晶非催化低熔点金属如β-氧化镓管，纳米线和纳米管的合成。 氧化镓纳米线的厚度为20-100nm，数十至数百微米。 透射电子显微镜（TEM）显示纳米线是高度结晶的，没有任何结构缺陷。 结果表明，氧化镓纳米结构的多次成核和生长可以直接从暴露于气相中氢和氧的合适组成的熔融镓中发生。 制造纳米线的方法可以扩展到其它低熔点金属及其氧化物，例如氧化锌，氧化锡，氧化铝，氧化铋和二氧化钛。

公开(公告)号：US20070095276A1

公开(公告)日：2007-05-03

申请号：US11521084

申请日：2006-09-14

Applicant: Mahendra Sunkara ,  Shashank Sharma ,  Hari Chandrasekaran ,  Hongwei Li ,  Sreeram Vaddiraju

Inventor： Mahendra Sunkara ,  Shashank Sharma ,  Hari Chandrasekaran ,  Hongwei Li ,  Sreeram Vaddiraju

IPC: C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C30B25/18 ,  C30B23/007 ,  C30B23/025 ,  C30B25/005 ,  Y10S977/72 ,  Y10S977/762 ,  Y10S977/809 ,  Y10S977/81 ,  Y10S977/825

Abstract: A process is provided to produce bulk quantities of nanowires in a variety of semiconductor materials. Thin films and droplets of low-melting metals such as gallium, indium, bismuth, and aluminum are used to dissolve and to produce nanowires. The dissolution of solutes can be achieved by using a solid source of solute and low-melting metal, or using a vapor phase source of solute and low-melting metal. The resulting nanowires range in size from 1 nanometer up to 1 micron in diameter and lengths ranging from 1 nanometer to several hundred nanometers or microns. This process does not require the use of metals such as gold and iron in the form of clusters whose size determines the resulting nanowire size. In addition, the process allows for a lower growth temperature, better control over size and size distribution, and better control over the composition and purity of the nanowire produced therefrom.

Abstract translation: 提供了一种在各种半导体材料中产生大量纳米线的方法。 使用低熔点金属如镓，铟，铋和铝的薄膜和液滴来溶解和产生纳米线。 溶质的溶解可以通过使用溶质和低熔点金属的固体源，或使用溶质和低熔点金属的气相源来实现。 所得的纳米线的尺寸范围从1纳米直到1微米的直径和长度范围从1纳米到几百纳米或微米。 该方法不需要以尺寸决定所得纳米线尺寸的簇的形式使用诸如金和铁的金属。 此外，该方法允许较低的生长温度，更好地控制尺寸和尺寸分布，以及更好地控制由其制备的纳米线的组成和纯度。

公开(公告)号：US07208094B2

公开(公告)日：2007-04-24

申请号：US10738176

申请日：2003-12-17

Applicant: M. Saif Islam ,  Theodore I. Kamins ,  Shashank Sharma

Inventor： M. Saif Islam ,  Theodore I. Kamins ,  Shashank Sharma

IPC: C23F1/00 ,  H01L21/00

CPC classification number: G11C13/025 ,  B82Y10/00 ,  B82Y30/00 ,  G11C2213/16 ,  G11C2213/17 ,  H01L21/76838 ,  H01L23/53271 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/721 ,  Y10S977/742 ,  H01L2924/00

Abstract: A semiconductor nanowire is grown laterally. A method of growing the nanowire forms a vertical surface on a substrate, and activates the vertical surface with a nanoparticle catalyst. A method of laterally bridging the nanowire grows the nanowire from the activated vertical surface to connect to an opposite vertical surface on the substrate. A method of connecting electrodes of a semiconductor device grows the nanowire from an activated device electrode to an opposing device electrode. A method of bridging semiconductor nanowires grows nanowires between an electrode pair in opposing lateral directions. A method of self-assembling the nanowire bridges the nanowire between an activated electrode pair. A method of controlling nanowire growth forms a surface irregularity in the vertical surface. An electronic device includes a laterally grown nano-scale interconnection.

Abstract translation: 半导体纳米线横向生长。 生长纳米线的方法在衬底上形成垂直表面，并用纳米颗粒催化剂激活垂直表面。 横向桥接纳米线的方法从激活的垂直表面生长纳米线，以连接到衬底上的相对的垂直表面。 连接半导体器件的电极的方法将纳米线从激活的器件电极生长到相对的器件电极。 桥接半导体纳米线的方法在相对的横向方向上的电极对之间生长纳米线。 自组装纳米线的方法在激活的电极对之间桥接纳米线。 控制纳米线生长的方法在垂直表面形成表面不规则性。 电子设备包括横向生长的纳米级互连。

公开(公告)号：US20070003467A1

公开(公告)日：2007-01-04

申请号：US11515051

申请日：2006-09-01

Applicant: Mahendra Sunkara ,  Shashank Sharma

Inventor： Mahendra Sunkara ,  Shashank Sharma

IPC: C01B33/02

CPC classification number: D01F9/08 ,  B82Y30/00 ,  B82Y40/00 ,  C04B35/62231 ,  C04B35/62295 ,  C04B2235/386 ,  C04B2235/6581 ,  C04B2235/6582 ,  C04B2235/667 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/786 ,  D01F9/12

Abstract: This invention presents a process to produce bulk quantities of nanowires of a variety of semiconductor materials. Large liquid gallium drops are used as sinks for the gas phase solute, generated in-situ facilitated by microwave plasma. To grow silicon nanowires for example, a silicon substrate covered with gallium droplets is exposed to a microwave plasma containing atomic hydrogen. A range of process parameters such as microwave power, pressure, inlet gas phase composition, were used to synthesize silicon nanowires as small as 4 nm (nanometers) in diameter and several micrometers long. As opposed to the present technology, the instant technique does not require creation of quantum sized liquid metal droplets to synthesize nanowires. In addition, it offers advantages such as lower growth temperature, better control over size and size distribution, better control over the composition and purity of the nanowires.

Abstract translation: 本发明提出了生产大量各种半导体材料的纳米线的方法。 大液滴镓滴用作气相溶质的水槽，由微波等离子体原位产生。 为了生长硅纳米线，例如，用镓液滴覆盖的硅衬底暴露于含有原子氢的微波等离子体。 使用微波功率，压力，入口气相组成等一系列工艺参数来合成直径为4nm（纳米）直径和几微米长的硅纳米线。 与本技术相反，本技术不需要产生量子大小的液态金属液滴来合成纳米线。 此外，它具有诸如较低生长温度，更好地控制尺寸和尺寸分布，更好地控制纳米线的组成和纯度等优点。

公开(公告)号：US20050072351A1

公开(公告)日：2005-04-07

申请号：US10664072

申请日：2003-09-16

Applicant: Mahendra Sunkara ,  Shashank Sharma

Inventor： Mahendra Sunkara ,  Shashank Sharma

IPC: C30B1/00 ,  C30B23/00 ,  C30B25/10 ,  C30B29/16 ,  C30B29/60

CPC classification number: C30B23/00 ,  C30B25/105 ,  C30B29/16 ,  C30B29/605

Abstract: The bulk synthesis of highly crystalline noncatalytic low melting metals such as β-gallium oxide tubes, nanowires, and nanopaintbrushes is accomplished using molten gallium and microwave plasma containing a mixture of monoatomic oxygen and hydrogen. Gallium oxide nanowires were 20-100 nm thick and tens to hundreds of microns long. Transmission electron microscopy (TEM) revealed the nanowires to be highly crystalline and devoid of any structural defects. Results showed that multiple nucleation and growth of gallium oxide nanostructures can occur directly out of molten gallium exposed to appropriate composition of hydrogen and oxygen in the gas phase. These gallium oxide nanostructures are of particular interest for opto-electronic devices and catalytic applications.

Abstract translation: 使用含有单原子氧和氢的混合物的熔融镓和微波等离子体来实现高结晶非催化低熔点金属如β-氧化镓管，纳米线和纳米线的大量合成。 氧化镓纳米线的厚度为20-100nm，数十至数百微米。 透射电子显微镜（TEM）显示纳米线是高度结晶的，没有任何结构缺陷。 结果表明，氧化镓纳米结构的多次成核和生长可以直接从暴露于气相中氢和氧的合适组成的熔融镓中发生。 这些氧化镓纳米结构对于光电器件和催化应用是特别感兴趣的。