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公开(公告)号：US20050054132A1
公开(公告)日：2005-03-10
申请号：US10951767
申请日：2004-09-29
申请人： Shinichi Nagahama , Shuji Nakamura
发明人： Shinichi Nagahama , Shuji Nakamura
IPC分类号： H01L21/20 , H01L21/205 , H01L33/00 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/22 , H01L33/32 , H01S5/02 , H01S5/32 , H01S5/323 , H01S5/343 , H01L21/00
CPC分类号： C30B29/403 , C30B25/20 , H01L21/02378 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/0075 , H01S5/021 , H01S5/0422 , H01S5/3201 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor device includes a GaN substrate having a single-crystal GaN layer at least on its surface and plurality of device-forming layers made of nitride semiconductor. The device-forming layer contacting the GaN substrate has a coefficient of thermal expansion smaller than that of GaN, so that a compressive strain is applied to the device-forming layer. This result in prevention of crack forming in the device-forming layers, and a lifetime characteristics of the nitride semiconductor device is improved.
摘要翻译： 氮化物半导体器件包括至少在其表面上具有单晶GaN层的GaN衬底和由氮化物半导体制成的多个器件形成层。 与GaN衬底接触的器件形成层的热膨胀系数小于GaN的热膨胀系数，从而对器件形成层施加压缩应变。 这导致防止器件形成层中的裂纹形成，并且提高了氮化物半导体器件的寿命特性。
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公开(公告)号：US06849864B2
公开(公告)日：2005-02-01
申请号：US10601582
申请日：2003-06-24
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L2924/0002 , H01S5/3054 , H01S5/3216 , H01S5/32341 , H01S2301/173 , H01L2924/00
摘要： A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
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公开(公告)号：US06835956B1
公开(公告)日：2004-12-28
申请号：US09500288
申请日：2000-02-08
申请人： Shinichi Nagahama , Shuji Nakamura
发明人： Shinichi Nagahama , Shuji Nakamura
IPC分类号： H01L2715
CPC分类号： C30B29/403 , C30B25/20 , H01L21/02378 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/0075 , H01S5/021 , H01S5/0422 , H01S5/3201 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor device includes a GaN substrate having a single-crystal GaN layer at least on its surface and plurality of device-forming layers made of nitride semiconductor. The device-forming layer contacting the GaN substrate has a coefficient of thermal expansion smaller than that of GaN, so that a compressive strain is applied to the device-forming layer. This result in prevention of crack forming in the device-forming layers, and a lifetime characteristics of the nitride semiconductor device is improved.
摘要翻译： 氮化物半导体器件包括至少在其表面上具有单晶GaN层的GaN衬底和由氮化物半导体制成的多个器件形成层。 与GaN衬底接触的器件形成层的热膨胀系数小于GaN的热膨胀系数，从而对器件形成层施加压缩应变。 这导致防止器件形成层中的裂纹形成，并且提高了氮化物半导体器件的寿命特性。
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公开(公告)号：US06580099B2
公开(公告)日：2003-06-17
申请号：US09973817
申请日：2001-10-11
IPC分类号： H01L2924
摘要： A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.
摘要翻译： 氮化物半导体发光器件具有由包含铟和镓的氮化物半导体构成的单量子阱结构或多量子阱的有源层。 提供由含有铝和镓的p型氮化物半导体制成的第一p型覆盖层与有源层的一个表面接触。 在第一p型覆盖层上设置由含有铝和镓的p型氮化物半导体构成的第二p型覆盖层。 第二p型覆盖层的带隙比第一p型覆盖层的带隙大。 提供与有源层的另一表面接触的n型半导体层。
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公开(公告)号：US5777350A
公开(公告)日：1998-07-07
申请号：US565101
申请日：1995-11-30
摘要： A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.
摘要翻译： 氮化物半导体发光器件具有由包含铟和镓的氮化物半导体构成的单量子阱结构或多量子阱的有源层。 提供由含有铝和镓的p型氮化物半导体制成的第一p型覆盖层与有源层的一个表面接触。 在第一p型覆盖层上设置由含有铝和镓的p型氮化物半导体构成的第二p型覆盖层。 第二p型覆盖层的带隙比第一p型覆盖层的带隙大。 提供与有源层的另一表面接触的n型半导体层。
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公开(公告)号：US08197111B2
公开(公告)日：2012-06-12
申请号：US12814231
申请日：2010-06-11
申请人： Atsutomo Hama , Tomotaka Honda , Shinichi Nagahama , Junji Takeichi , Yoshinori Murazaki , Hiroto Tamaki , Yukihiro Hayashi
发明人： Atsutomo Hama , Tomotaka Honda , Shinichi Nagahama , Junji Takeichi , Yoshinori Murazaki , Hiroto Tamaki , Yukihiro Hayashi
IPC分类号： H01L33/00
CPC分类号： G02B6/4298 , A61B1/0017 , A61B1/0653 , A61B1/07 , A61B18/22 , A61B2018/2255 , G02B6/0003 , G02B6/0008 , G02B6/4206 , G02B6/4249
摘要： A light emitting device includes an excitation light source that emits excitation light, a wavelength conversion member, a light guide, and a light guide distal end member. The wavelength conversion member absorbs the excitation light emitted from the excitation light source, converts its wavelength, and releases light of a predetermined wavelength band. The light guide in which the center part (core) of its cross section has a refractive index that is higher than the refractive index of the peripheral portion (cladding) guides the excitation light emitted from the excitation light source to the wavelength conversion member. The light guide distal end member supports a distal end of the light guide on the wavelength conversion member side. The light guide distal end member is formed from a material that reflects the excitation light and/or the light that has undergone wavelength conversion.
摘要翻译： 发光器件包括发射激发光的激发光源，波长转换元件，光导和光导远端元件。 波长转换构件吸收从激发光源发射的激发光，转换其波长，并释放预定波长带的光。 其横截面的中心部分（芯部）的折射率高于周边部分（包层）的折射率的光导向从激发光源发射的激发光到波长转换部件。 光导远端构件支撑波长转换构件侧的光导的远端。 光导远端构件由反射经过波长转换的激发光和/或光的材料形成。
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公开(公告)号：US07615804B2
公开(公告)日：2009-11-10
申请号：US11025897
申请日：2005-01-03
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L2924/0002 , H01S5/3054 , H01S5/3216 , H01S5/32341 , H01S2301/173 , H01L2924/00
摘要： A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
摘要翻译： 包括发光器件的氮化物半导体器件包括具有n型导电性的一个或多个氮化物半导体层的n型区域，具有p型导电性的一个或多个氮化物半导体层的p型区域和在p型区域之间的有源层， n型区域和p型区域。 在这样的装置中，提供了包括分别具有不同成分的氮化物半导体的第一层和第二层的超晶格层。 超晶格结构使得器件的工作电流和电压降低，从而实现更有效的器件。
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公开(公告)号：US20070272915A1
公开(公告)日：2007-11-29
申请号：US11635613
申请日：2006-12-08
IPC分类号： H01L31/00
CPC分类号： H01S5/343 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01L33/325 , H01S5/2004 , H01S5/2009 , H01S5/2202 , H01S5/3201 , H01S5/3206 , H01S5/321 , H01S5/3211 , H01S5/3404 , H01S5/3412 , H01S5/3413 , H01S5/34333
摘要： A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.
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39.发明授权Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor 有权具有含铟氮化物半导体的量子阱结构有源层的氮化物半导体公开(公告)号：US07166874B2
公开(公告)日：2007-01-23
申请号：US10718652
申请日：2003-11-24
IPC分类号： H01L29/24 , H01L33/00 , H01L29/06 , H01L31/0328 , H01L31/0336
CPC分类号： H01S5/343 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01L33/325 , H01S5/2004 , H01S5/2009 , H01S5/2202 , H01S5/3201 , H01S5/3206 , H01S5/321 , H01S5/3211 , H01S5/3404 , H01S5/3412 , H01S5/3413 , H01S5/34333
摘要： A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.
摘要翻译： 氮化物半导体器件具有氮化物半导体层结构。 该结构包括含有含铟氮化物半导体的量子阱结构的有源层。 提供具有比有源层的能隙大的带隙能量的第一氮化物半导体层与有源层接触。 具有比第一层小的带隙能量的第二氮化物半导体层设置在第一层上。 此外，具有比第二层的能隙大的带隙能量的第三氮化物半导体层设置在第二层上。
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公开(公告)号：US07083996B2
公开(公告)日：2006-08-01
申请号：US10951767
申请日：2004-09-29
申请人： Shinichi Nagahama , Shuji Nakamura
发明人： Shinichi Nagahama , Shuji Nakamura
IPC分类号： H01L21/00
CPC分类号： C30B29/403 , C30B25/20 , H01L21/02378 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/0075 , H01S5/021 , H01S5/0422 , H01S5/3201 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor device includes a GaN substrate having a single-crystal GaN layer at least on its surface and plurality of device-forming layers made of nitride semiconductor. The device-forming layer contacting the GaN substrate has a coefficient of thermal expansion smaller than that of GaN, so that a compressive strain is applied to the device-forming layer. This result in prevention of crack forming in the device-forming layers, and a lifetime characteristics of the nitride semiconductor device is improved.
摘要翻译： 氮化物半导体器件包括至少在其表面上具有单晶GaN层的GaN衬底和由氮化物半导体制成的多个器件形成层。 与GaN衬底接触的器件形成层的热膨胀系数小于GaN的热膨胀系数，从而对器件形成层施加压缩应变。 这导致防止器件形成层中的裂纹形成，并且提高了氮化物半导体器件的寿命特性。
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