公开(公告)号：US07413914B2

公开(公告)日：2008-08-19

申请号：US10108790

申请日：2002-03-29

申请人： Yukihiro Ushiku ,  Mitsutoshi Nakamura

发明人： Yukihiro Ushiku ,  Mitsutoshi Nakamura

IPC分类号： H01L21/66 ,  G01R31/26

CPC分类号： H01L22/20 ,  C23C16/52 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/31662 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process of manufacturing a semiconductor device utilizing a thermo-chemical reaction is started based on preset initial settings, a state function of an atmosphere associated with the thermo-chemical reaction is measured, a state of the atmosphere and a change thereof are analyzed based on measurement data obtained by the measurement, and then, analysis data obtained by the analysis is fed back to a manufacturing process.

摘要翻译： 基于预设的初始设定开始制造利用热化学反应的半导体器件的工艺，测量与热化学反应相关的气氛的状态函数，基于大气的状态及其变化，分析基于 通过测量获得的测量数据，然后将通过分析获得的分析数据反馈到制造过程。

公开(公告)号：US07361960B1

公开(公告)日：2008-04-22

申请号：US09688989

申请日：2000-10-17

申请人： Yoshitaka Tsunashima ,  Kiyotaka Miyano ,  Yukihiro Ushiku

发明人： Yoshitaka Tsunashima ,  Kiyotaka Miyano ,  Yukihiro Ushiku

IPC分类号： H01L29/76 ,  H01L31/00

CPC分类号： H01L27/11502 ,  H01L21/76224 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823475 ,  H01L27/10873 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11534 ,  H01L29/78391 ,  Y10S257/903

摘要： A first insulator film and a first polysilicon film are formed on first and second element regions of a semiconductor substrate. The first insulator film and first polysilicon film are removed from the second element region. A second insulator film is formed on the second element region from which the first insulator film and first polysilicon film are removed, and a second polysilicon film is formed on the second insulator film. The first polysilicon film is processed, forming a first gate electrode at the first element region. The second polysilicon film is processed, forming a second gate electrode at the second element region. A silicon nitride film is removed from an element-isolation region. A metal film is formed on the region from which the silicon nitride film has been removed, and connects the first and second gate electrodes.

摘要翻译： 第一绝缘膜和第一多晶硅膜形成在半导体衬底的第一和第二元件区上。 从第二元件区域去除第一绝缘膜和第一多晶硅膜。 在除去第一绝缘膜和第一多晶硅膜的第二元件区域上形成第二绝缘膜，在第二绝缘膜上形成第二多晶硅膜。 处理第一多晶硅膜，在第一元件区域形成第一栅电极。 处理第二多晶硅膜，在第二元件区域形成第二栅电极。 从元件隔离区域去除氮化硅膜。 在去除了氮化硅膜的区域上形成金属膜，并且连接第一和第二栅电极。

公开(公告)号：US20060235560A1

公开(公告)日：2006-10-19

申请号：US11395276

申请日：2006-04-03

申请人： Akira Ogawa ,  Yukihiro Ushiku ,  Tomomi Ino

发明人： Akira Ogawa ,  Yukihiro Ushiku ,  Tomomi Ino

IPC分类号： G06F19/00

CPC分类号： G05B19/41875 ,  G05B2219/32097 ,  G05B2219/32194 ,  G05B2219/45031 ,  H01L21/67253 ,  Y02P90/20 ,  Y02P90/22

摘要： A quality control system has: a QC value storage unit that stores QC actual measurements of past lots, a data acquisition device that acquires the device internal information of a processing device processing an intended lot, a device internal information storage unit that stores the device internal information, a recipe storage unit that stores a plurality of recipes classified by the distribution of sampling density within a wafer, a QC value prediction unit that predicts a QC prediction value of the intended lot using the device internal information and the QC actual measurements, a wafer determination unit that determines a sample wafer to be measured from among a plurality of wafers constituting the intended lot using the QC prediction value, a recipe selection unit that selects an application recipe to be applied to the sample wafer from among the plurality of recipes using the QC prediction value, and a measurement device that makes a QC measurement on the sample wafer using the application recipe and stores the measurement result in the QC value storage unit.

摘要翻译： 质量控制系统具有：存储过去批次的QC实际测量值的QC值存储单元，获取处理预期批次的处理设备的设备内部信息的数据获取设备，存储设备内部的设备内部信息存储单元 信息，存储通过晶片内的采样密度分布分类的多个配方的食谱存储单元，使用设备内部信息和QC实际测量来预测预期批次的QC预测值的QC值预测单元， 晶片确定单元，其使用QC预测值从构成预期批次的多个晶片中确定待测量的样品晶片;配方选择单元，从多个配方中选择应用于样品晶片的应用配方，所述配方选择单元使用 QC预测值，以及使用该测量装置对样品晶片进行QC测量 应用配方，并将测量结果存储在QC值存储单元中。

公开(公告)号：US20060217830A1

公开(公告)日：2006-09-28

申请号：US11444454

申请日：2006-06-01

申请人： Kazuo Saki ,  Yukihiro Ushiku

发明人： Kazuo Saki ,  Yukihiro Ushiku

IPC分类号： G06F19/00

CPC分类号： H01L21/67276 ,  C23C16/52 ,  C23C16/54

摘要： A semiconductor manufacturing apparatus includes a processing apparatus main body which executes a process related to manufacturing a semiconductor device, an internal apparatus controller which supplies a start signal to start a process and a stop signal to stop the process of the semiconductor device within the processing apparatus main body, and a process controller which calculates a physical characteristic of the semiconductor device currently being processed and sends the stop signal to the apparatus controller when a calculated value reaches a predetermined value.

摘要翻译： 半导体制造装置包括执行与制造半导体装置有关的处理的处理装置主体，提供开始处理的起始信号的内部装置控制器和停止处理装置内的半导体装置的处理的停止信号 主体和计算当前处理的半导体器件的物理特性的处理控制器，当计算值达到预定值时，将该停止信号发送给设备控制器。

公开(公告)号：US5898203A

公开(公告)日：1999-04-27

申请号：US903387

申请日：1997-07-30

申请人： Takashi Yoshitomi ,  Masanobu Saito ,  Hisayo Momose ,  Hiroshi Iwai ,  Yukihiro Ushiku ,  Mizuki Ono ,  Yasushi Akasaka ,  Hideaki Nii ,  Satoshi Matsuda ,  Yasuhiro Katsumata

发明人： Takashi Yoshitomi ,  Masanobu Saito ,  Hisayo Momose ,  Hiroshi Iwai ,  Yukihiro Ushiku ,  Mizuki Ono ,  Yasushi Akasaka ,  Hideaki Nii ,  Satoshi Matsuda ,  Yasuhiro Katsumata

IPC分类号： H01L21/033 ,  H01L21/225 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/423 ,  H01L29/78 ,  H01L29/76

CPC分类号： H01L29/6659 ,  H01L21/0338 ,  H01L21/2255 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/823814 ,  H01L27/0928 ,  H01L29/0847 ,  H01L29/41783 ,  H01L29/42376 ,  H01L29/66492 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/7833 ,  Y10S257/90 ,  Y10S438/965

摘要： A diffused server as a source and a drain. It is formed comprised of a deep first diffused layer and a shallow second diffused layer positioned between the first diffused layer and the channel region. In the second diffused region, a distribution in a depth direction of carriers has a profile in which the concentration is more than 5.times.10.sup.18 cm-.sup.-3 at the peak and is in correspondence with a carrier concentration of the semiconductor substrate at a depth less than 0.04 .mu.m. Since the second diffused layer has a high concentration, the short-channel effect can be suppressed. As the second diffused region, a solid phase diffusion source such as an impurity doped silicate glass is used.

摘要翻译： 一个扩散的服务器作为源和漏。 其形成包括位于第一扩散层和沟道区之间的深第一扩散层和浅第二扩散层。 在第二扩散区域中，载流子深度方向的分布具有在峰值处浓度大于5×10 18 cm -3的轮廓，并且与深度小于0.04的半导体衬底的载流子浓度相对应 亩 由于第二扩散层具有高浓度，所以可以抑制短沟道效应。 作为第二扩散区域，使用诸如杂质掺杂硅酸盐玻璃的固相扩散源。

公开(公告)号：US5766965A

公开(公告)日：1998-06-16

申请号：US353301

申请日：1994-12-05

申请人： Takashi Yoshitomi ,  Masanobu Saito ,  Hisayo Momose ,  Hiroshi Iwai ,  Yukihiro Ushiku ,  Mizuki Ono ,  Yasushi Akasaka ,  Hideaki Nii ,  Satoshi Matsuda ,  Yasuhiro Katsumata

发明人： Takashi Yoshitomi ,  Masanobu Saito ,  Hisayo Momose ,  Hiroshi Iwai ,  Yukihiro Ushiku ,  Mizuki Ono ,  Yasushi Akasaka ,  Hideaki Nii ,  Satoshi Matsuda ,  Yasuhiro Katsumata

IPC分类号： H01L21/033 ,  H01L21/225 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/423 ,  H01L29/78 ,  H01L21/265

CPC分类号： H01L29/6659 ,  H01L21/0338 ,  H01L21/2255 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/823814 ,  H01L27/0928 ,  H01L29/0847 ,  H01L29/41783 ,  H01L29/42376 ,  H01L29/66492 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/7833 ,  Y10S257/90 ,  Y10S438/965

摘要： A diffused layer serves as a source and a drain. It is formed comprised of a deep first diffused layer and a shallow second diffused layer positioned between the first diffused layer and the channel region. In the second diffused region, a distribution in a depth direction of carriers has a profile in which the concentration is more than 5.times.10.sup.18 cm.sup.-3 at the peak and is in correspondence with a carrier concentration of the semiconductor substrate at a depth less than 0.04 .mu.m. Since the second diffused layer has a high concentration, the short-channel effect can be suppressed. As the second diffused region, a solid phase diffusion source such as an impurity doped silicate glass is used.

公开(公告)号：US5529954A

公开(公告)日：1996-06-25

申请号：US480733

申请日：1995-06-07

申请人： Tadashi Iijima ,  Hisako Ono ,  Yukihiro Ushiku ,  Akira Nishiyama ,  Naomi Nakasa

发明人： Tadashi Iijima ,  Hisako Ono ,  Yukihiro Ushiku ,  Akira Nishiyama ,  Naomi Nakasa

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L21/28

CPC分类号： H01L21/76834 ,  H01L21/28512 ,  H01L21/76801 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76874 ,  H01L21/76882 ,  H01L21/76886 ,  H01L23/53242 ,  H01L23/53247 ,  H01L23/53252 ,  H01L2924/0002 ,  Y10S148/015 ,  Y10S148/035 ,  Y10S438/922

摘要： A semiconductor device includes a first metal film formed on a semiconductor substrate, a second metal film formed on the first metal film and containing silver as a main component, and a protective film containing a metal element of the first metal film and covering at least the upper surface of the second metal film. The protective film is formed by annealing in an atmosphere containing a predetermined element. That is, the metal element of the first metal film is diffused into the second metal film and reacts with the predetermined element in the atmosphere on the surface of the second metal film, thereby forming the protective film. Aggregation of silver is prevented in the presence of the protective film.

摘要翻译： 半导体器件包括形成在半导体衬底上的第一金属膜，形成在第一金属膜上并含有银作为主要成分的第二金属膜和包含第一金属膜的金属元素的保护膜，并且至少覆盖 第二金属膜的上表面。 保护膜通过在含有规定元素的气氛中进行退火而形成。 也就是说，第一金属膜的金属元素扩散到第二金属膜中并与第二金属膜的表面上的大气中的预定元素反应，从而形成保护膜。 在保护膜的存在下防止银的聚集。

公开(公告)号：US5028552A

公开(公告)日：1991-07-02

申请号：US395356

申请日：1989-08-17

申请人： Yukihiro Ushiku

发明人： Yukihiro Ushiku

IPC分类号： H01L21/266 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/78

CPC分类号： H01L29/66575 ,  H01L21/266 ,  H01L21/823807 ,  H01L29/6656 ,  Y10S148/082

摘要： A method of manufacturing an insulated-gate type field effect transistor includes the steps of forming an insulating film, on a semiconductor substrate, forming a polycrystalline silicon layer on the insulating film, forming a masking layer on the polycrystalline silicon layer, patterning the polycrystalline silicon and masking layers to form a gate electrode and a masking layer, doping an impurity of a first conductivity type in the semiconductor substrate using the gate electrode and the masking layer as masks, thereby forming a source region and a drain region, removing the masking layer, and ion-implanting an impurity of a second conductivity type in a region of the semiconductor substrate under the gate electrode through the gate electrode, thereby forming a channel-doped region. In this method, after the source and drain regions are formed, the impurity of the second conductivity type is ion-implanted in the substrate through the thin gate electrode to form the channel-doped region.

摘要翻译： 一种制造绝缘栅型场效应晶体管的方法包括以下步骤：在半导体衬底上形成绝缘膜，在绝缘膜上形成多晶硅层，在多晶硅层上形成掩模层，构图多晶硅 以及掩模层以形成栅电极和掩模层，使用栅电极和掩模层作为掩模在半导体衬底中掺杂第一导电类型的杂质，从而形成源区和漏区，去除掩模层 并且通过栅电极在栅电极下的半导体衬底的区域中离子注入第二导电类型的杂质，从而形成沟道掺杂区域。 在该方法中，在形成源极和漏极区之后，通过薄栅电极将第二导电类型的杂质离子注入衬底中以形成沟道掺杂区。

公开(公告)号：US07314766B2

公开(公告)日：2008-01-01

申请号：US10706090

申请日：2003-11-13

申请人： Junji Sugamoto ,  Norihiko Tsuchiya ,  Yukihiro Ushiku ,  Katsujiro Tanzawa

发明人： Junji Sugamoto ,  Norihiko Tsuchiya ,  Yukihiro Ushiku ,  Katsujiro Tanzawa

IPC分类号： H01L21/00

CPC分类号： H01L22/24 ,  H01L2924/0002 ,  H01L2924/00

摘要： A treatment method of a semiconductor wafer includes treating the semiconductor wafer in a first solution having at least one kind of an oxidative acid and an oxidizing agent and treating the semiconductor wafer in a second solution having at least one of HF and NH4F.

摘要翻译： 半导体晶片的处理方法包括在具有至少一种氧化酸和氧化剂的第一溶液中处理半导体晶片，并且在具有HF和NH 4中的至少一种的第二溶液中处理半导体晶片 F。

公开(公告)号：US20060131696A1

公开(公告)日：2006-06-22

申请号：US11350027

申请日：2006-02-09

申请人： Tsunetoshi Arikado ,  Masao Iwase ,  Soichi Nadahara ,  Yuso Udo ,  Yukihiro Ushiku ,  Shinichi Nitta ,  Moriya Miyashita ,  Junji Sugamoto ,  Hiroaki Yamada ,  Hajime Nagano ,  Katsujiro Tanzawa ,  Hiroshi Matsushita ,  Norihiko Tsuchiya ,  Katsuya Okumura

发明人： Tsunetoshi Arikado ,  Masao Iwase ,  Soichi Nadahara ,  Yuso Udo ,  Yukihiro Ushiku ,  Shinichi Nitta ,  Moriya Miyashita ,  Junji Sugamoto ,  Hiroaki Yamada ,  Hajime Nagano ,  Katsujiro Tanzawa ,  Hiroshi Matsushita ,  Norihiko Tsuchiya ,  Katsuya Okumura

IPC分类号： H01L29/06 ,  H01L23/02

CPC分类号： H01L23/544 ,  H01L2223/54406 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2223/54493 ,  H01L2924/0002 ,  Y10S438/974 ,  H01L2924/00

摘要： A semiconductor wafer has a bevel contour formed along the periphery thereof, products formed on the wafer, and an ID mark formed on the bevel contour. The ID mark shows at least the properties, manufacturing conditions, and test results of the products.