公开(公告)号：US20240222242A1

公开(公告)日：2024-07-04

申请号：US18609836

申请日：2024-03-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Yun Hou ,  Hsien-Pin Hu ,  Sao-Ling Chiu ,  Wen-Hsin Wei ,  Ping-Kang Huang ,  Chih-Ta Shen ,  Szu-Wei Lu ,  Ying-Ching Shih ,  Wen-Chih Chiou ,  Chi-Hsi Wu ,  Chen-Hua Yu

IPC: H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538

CPC classification number: H01L23/49816 ,  H01L21/4853 ,  H01L21/56 ,  H01L23/3121 ,  H01L23/49861 ,  H01L24/13 ,  H01L23/5385 ,  H01L2224/023 ,  H01L2225/107

Abstract: A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.

公开(公告)号：US12015023B2

公开(公告)日：2024-06-18

申请号：US17355433

申请日：2021-06-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Yun Hou ,  Sung-Hui Huang ,  Kuan-Yu Huang ,  Hsien-Pin Hu ,  Yushun Lin ,  Heh-Chang Huang ,  Hsing-Kuo Hsia ,  Chih-Chieh Hung ,  Ying-Ching Shih ,  Chin-Fu Kao ,  Wen-Hsin Wei ,  Li-Chung Kuo ,  Chi-Hsi Wu ,  Chen-Hua Yu

IPC: H01L25/00 ,  H01L21/48 ,  H01L23/24 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00

CPC classification number: H01L25/50 ,  H01L21/4803 ,  H01L21/4853 ,  H01L23/24 ,  H01L23/3128 ,  H01L23/49827 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/18 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/1144 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2224/92225 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2224/97 ,  H01L2224/83 ,  H01L2224/97 ,  H01L2224/81

Abstract: An integrated circuit package and a method of forming the same are provided. The method includes attaching an integrated circuit die to a first substrate. A dummy die is formed. The dummy die is attached to the first substrate adjacent the integrated circuit die. An encapsulant is formed over the first substrate and surrounding the dummy die and the integrated circuit die. The encapsulant, the dummy die and the integrated circuit die are planarized, a topmost surface of the encapsulant being substantially level with a topmost surface of the dummy die and a topmost surface of the integrated circuit die. An interior portion of the dummy die is removed. A remaining portion of the dummy die forms an annular structure.

公开(公告)号：US20240105632A1

公开(公告)日：2024-03-28

申请号：US18525966

申请日：2023-12-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsien-Pin Hu ,  Chen-Hua Yu ,  Ming-Fa Chen ,  Jing-Cheng Lin ,  Jiun Ren Lai ,  Yung-Chi Lin

IPC: H01L23/538 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00 ,  H01L23/14 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L23/5389 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/147 ,  H01L23/3121 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/81 ,  H01L24/97 ,  H01L24/16 ,  H01L25/0652

Abstract: A device includes an interposer, which includes a substrate having a top surface. An interconnect structure is formed over the top surface of the substrate, wherein the interconnect structure includes at least one dielectric layer, and metal features in the at least one dielectric layer. A plurality of through-substrate vias (TSVs) is in the substrate and electrically coupled to the interconnect structure. A first die is over and bonded onto the interposer. A second die is bonded onto the interposer, wherein the second die is under the interconnect structure.

公开(公告)号：US11854983B2

公开(公告)日：2023-12-26

申请号：US17873876

申请日：2022-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Yun Hou ,  Hsien-Pin Hu

IPC: H01L23/48 ,  H01L23/538 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L23/5381 ,  H01L21/486 ,  H01L21/56 ,  H01L23/3121 ,  H01L23/49861 ,  H01L23/5384

Abstract: Semiconductor devices and methods of manufacture are provided. In embodiments the semiconductor device includes a substrate, a first interposer bonded to the substrate, a second interposer bonded to the substrate, a bridge component electrically connecting the first interposer to the second interposer, two or more first dies bonded to the first interposer; and two or more second dies bonded to the second interposer.

公开(公告)号：US20230260896A1

公开(公告)日：2023-08-17

申请号：US17837686

申请日：2022-06-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsien-Pin Hu ,  Shang-Yun Hou ,  Shih-Wen Huang

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/31 ,  H01L21/768 ,  H01L21/56

CPC classification number: H01L23/5226 ,  H01L21/56 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/5283

Abstract: A device package including an interposer. The interposer comprising: a semiconductor substrate; first through vias extending through the semiconductor substrate; an interconnect structure comprising: a first metallization pattern in an inorganic insulating material; and a passivation film over the first metallization pattern; and a first redistribution structure over the passivation film. The first redistribution structure comprising a second metallization pattern in an organic insulating material. The device package further including an integrated circuit die over and attached to the interposer; and a first encapsulant around the integrated circuit die.

公开(公告)号：US11527454B2

公开(公告)日：2022-12-13

申请号：US17362185

申请日：2021-06-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  Wen-Hsin Wei ,  Chi-Hsi Wu ,  Shang-Yun Hou ,  Jing-Cheng Lin ,  Hsien-Pin Hu ,  Ying-Ching Shih ,  Szu-Wei Lu

IPC: H01L23/31 ,  H01L23/16 ,  H01L21/56 ,  H01L23/14 ,  H01L21/48 ,  H01L25/03 ,  H01L25/065 ,  H01L23/48 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00

Abstract: An embodiment is a method including: attaching a first die to a first side of a first component using first electrical connectors, attaching a first side of a second die to first side of the first component using second electrical connectors, attaching a dummy die to the first side of the first component in a scribe line region of the first component, adhering a cover structure to a second side of the second die, and singulating the first component and the dummy die to form a package structure.

公开(公告)号：US20220359355A1

公开(公告)日：2022-11-10

申请号：US17870099

申请日：2022-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Yun Hou ,  Hsien-Pin Hu ,  Sao-Ling Chiu ,  Wen-Hsin Wei ,  Ping-Kang Huang ,  Chih-Ta Shen ,  Szu-Wei Lu ,  Ying-Ching Shih ,  Wen-Chih Chiou ,  Chi-Hsi Wu ,  Chen-Hua Yu

IPC: H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01L23/31 ,  H01L21/56

Abstract: A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.

公开(公告)号：US11456287B2

公开(公告)日：2022-09-27

申请号：US16846400

申请日：2020-04-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsien-Pin Hu ,  Chin-Fu Kao ,  Li-Hui Cheng ,  Szu-Wei Lu ,  Wen-Hsin Wei ,  Chih-Chien Pan

IPC: H01L23/053 ,  H01L23/10 ,  H01L25/16 ,  H01L23/16 ,  H01L23/498 ,  H01L21/56 ,  H01L21/48 ,  H01L21/683 ,  H01L23/538 ,  H01L25/065

Abstract: A package structure includes a circuit substrate, a semiconductor package, a lid structure, a passive device and a barrier structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The lid structure is disposed on the circuit substrate covering the semiconductor package. The lid structure is attached to the circuit substrate through an adhesive material. The passive device is disposed on the circuit substrate in between the semiconductor package and the lid structure. The barrier structure is separating the passive device from the lid structure and the adhesive material, and the barrier structure is in contact with the adhesive material.

公开(公告)号：US11417580B2

公开(公告)日：2022-08-16

申请号：US17012299

申请日：2020-09-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  Wen-Hsin Wei ,  Chi-Hsi Wu ,  Shang-Yun Hou ,  Jing-Cheng Lin ,  Hsien-Pin Hu ,  Ying-Ching Shih ,  Szu-Wei Lu

IPC: H01L23/31 ,  H01L23/16 ,  H01L21/56 ,  H01L23/14 ,  H01L21/48 ,  H01L25/03 ,  H01L25/065 ,  H01L23/48 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00

Abstract: An embodiment is a method including: attaching a first die to a first side of a first component using first electrical connectors, attaching a first side of a second die to first side of the first component using second electrical connectors, attaching a dummy die to the first side of the first component in a scribe line region of the first component, adhering a cover structure to a second side of the second die, and singulating the first component and the dummy die to form a package structure.

公开(公告)号：US20210320097A1

公开(公告)日：2021-10-14

申请号：US17355433

申请日：2021-06-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Yun Hou ,  Sung-Hui Huang ,  Kuan-Yu Huang ,  Hsien-Pin Hu ,  Yushun Lin ,  Heh-Chang Huang ,  Hsing-Kuo Hsia ,  Chih-Chieh Hung ,  Ying-Ching Shih ,  Chin-Fu Kao ,  Wen-Hsin Wei ,  Li-Chung Kuo ,  Chi-Hsi Wu ,  Chen-Hua Yu

IPC: H01L25/00 ,  H01L25/065 ,  H01L23/24 ,  H01L23/31 ,  H01L23/498 ,  H01L21/48 ,  H01L25/18

Abstract: An integrated circuit package and a method of forming the same are provided. The method includes attaching an integrated circuit die to a first substrate. A dummy die is formed. The dummy die is attached to the first substrate adjacent the integrated circuit die. An encapsulant is formed over the first substrate and surrounding the dummy die and the integrated circuit die. The encapsulant, the dummy die and the integrated circuit die are planarized, a topmost surface of the encapsulant being substantially level with a topmost surface of the dummy die and a topmost surface of the integrated circuit die. An interior portion of the dummy die is removed. A remaining portion of the dummy die forms an annular structure.