公开(公告)号：US20050199963A1

公开(公告)日：2005-09-15

申请号：US11016923

申请日：2004-12-21

申请人： Tomonori Aoyama

发明人： Tomonori Aoyama

IPC分类号： H01L21/8238 ,  H01L29/76

CPC分类号： H01L21/28052 ,  H01L21/28097 ,  H01L21/28114 ,  H01L21/28247 ,  H01L21/823835 ,  H01L29/42376 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833

摘要： An element isolation dielectric film is formed around device regions in a silicon substrate. The device regions are an n-type diffusion region, a p-type diffusion region, a p-type extension region, an n-type extension region, a p-type source/drain region, an n-type source/drain region, and a nickel silicide film. Each gate dielectric film includes a silicon oxide film and a hafnium silicate nitride film. The n-type gate electrode includes an n-type silicon film and a nickel silicide film, and the p-type gate electrode includes a nickel silicide film. The hafnium silicate nitride films are not on the sidewalls of the gate electrodes.

摘要翻译： 在硅衬底中的器件区周围形成元件隔离电介质膜。 器件区域是n型扩散区域，p型扩散区域，p型延伸区域，n型延伸区域，p型源极/漏极区域，n型源极/漏极区域， 和硅化镍膜。 每个栅极电介质膜包括氧化硅膜和硅酸铪氮化物膜。 n型栅极包括n型硅膜和硅化镍膜，p型栅极包括硅化镍膜。 硅酸铪膜不在栅电极的侧壁上。

公开(公告)号：US06909156B2

公开(公告)日：2005-06-21

申请号：US10811056

申请日：2004-03-29

申请人： Tomonori Aoyama

发明人： Tomonori Aoyama

IPC分类号： H01L27/092 ,  H01L21/28 ,  H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/51 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A semiconductor device includes a first insulating film on a silicon substrate and a second insulating film on the first insulating film. The first insulating film is a silicon oxide film having a thickness of 1 nm or less and a suboxide content of 30% or less. The second insulating film is a high dielectric constant insulating film.

摘要翻译： 半导体器件包括硅衬底上的第一绝缘膜和第一绝缘膜上的第二绝缘膜。 第一绝缘膜是厚度为1nm以下，低氧化物含量为30％以下的氧化硅膜。 第二绝缘膜是高介电常数绝缘膜。

公开(公告)号：US6156599A

公开(公告)日：2000-12-05

申请号：US189943

申请日：1998-11-12

申请人： Tomonori Aoyama ,  Keitaro Imai

发明人： Tomonori Aoyama ,  Keitaro Imai

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/8244

CPC分类号： H01L27/10852 ,  H01L28/55 ,  H01L28/60 ,  H01L2924/0002

摘要： A semiconductor device comprising a semiconductor substrate and a capacitor formed on the semiconductor substrate, wherein the capacitor is formed of a multilayer comprising a first electrode disposed close to the semiconductor substrate, a second electrode disposed remote from the semiconductor substrate and a dielectric film formed of a metal oxide and interposed between the first electrode and the second electrode, and at least either one of the first and second electrodes contains oxygen and is constituted by an element selected from either one of Group 7A and Group 8 elements belonging to either one of the fifth and sixth periods of Periodic Table, the content of oxygen being in a range of 0.004 to 5 atom. %.

摘要翻译： 一种半导体器件，包括形成在半导体衬底上的半导体衬底和电容器，其中电容器由包括靠近半导体衬底设置的第一电极的多层构成，远离半导体衬底设置的第二电极和由 金属氧化物并且介于第一电极和第二电极之间，并且第一和第二电极中的至少一个包含氧，并且由选自以下的任何一个的7A和8族元素中的任一个组成： 第五和第六周期的周期表，氧的含量在0.004至5原子的范围内。 ％。

公开(公告)号：US5852307A

公开(公告)日：1998-12-22

申请号：US681537

申请日：1996-07-23

申请人： Tomonori Aoyama ,  Keitaro Imai

发明人： Tomonori Aoyama ,  Keitaro Imai

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/78

CPC分类号： H01L27/10852 ,  H01L28/55 ,  H01L28/60 ,  H01L2924/0002

摘要： A semiconductor device comprising a semiconductor substrate and a capacitor formed on the semiconductor substrate, wherein the capacitor is formed of a multilayer comprising a first electrode disposed close to the semiconductor substrate, a second electrode disposed remote from the semiconductor substrate and a dielectric film formed of a metal oxide and interposed between the first electrode and the second electrode, and at least either one of the first and second electrodes contains oxygen and is constituted by an element selected from either one of Group 7A and Group 8 elements belonging to either one of the fifth and sixth periods of Periodic Table, the content of oxygen being in a range of 0.004 to 5 atom.%.

摘要翻译： 一种半导体器件，包括形成在半导体衬底上的半导体衬底和电容器，其中电容器由包括靠近半导体衬底设置的第一电极的多层构成，远离半导体衬底设置的第二电极和由 金属氧化物并且介于第一电极和第二电极之间，并且第一和第二电极中的至少一个包含氧，并且由选自以下的任何一个的7A和8族元素中的任一个组成： 第五和第六周期的周期表，氧的含量在0.004至5原子％的范围内。

公开(公告)号：US5670808A

公开(公告)日：1997-09-23

申请号：US591153

申请日：1996-01-25

申请人： Kazuya Nishihori ,  Yoshiaki Kitaura ,  Yoshikazu Tanabe ,  Tomonori Aoyama ,  Kyoichi Suguro ,  Kumi Okuwada ,  Shuichi Komatsu ,  Kazuhide Abe

发明人： Kazuya Nishihori ,  Yoshiaki Kitaura ,  Yoshikazu Tanabe ,  Tomonori Aoyama ,  Kyoichi Suguro ,  Kumi Okuwada ,  Shuichi Komatsu ,  Kazuhide Abe

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/06 ,  H01L27/095 ,  H01L29/92 ,  H01L27/108

CPC分类号： H01L27/0629 ,  H01L27/0605 ,  H01L27/10852 ,  H01L28/40

摘要： A semiconductor device in which an SiO.sub.2 film and a first wiring layer are arranged in this order on a GaAs substrate. A capacitor is formed on the first wiring layer. The capacitor includes a lower electrode which has a multi-layer structure consisting of a Ti layer, an Mo layer, and a Pt layer in this order from underside. The capacitor also includes a dielectric film made of strontium titanate. The capacitor further includes an upper electrode which has a multi-layer structure consisting of a WN.sub.x layer (120 um) and a W layer (300 nm) in this order from underside. That surface of the upper electrode, which is in contact with the dielectric film, is defined by the tungsten nitride layer.

摘要翻译： 其中SiO 2膜和第一布线层依次布置在GaAs衬底上的半导体器件。 在第一布线层上形成电容器。 电容器包括从下侧依次具有由Ti层，Mo层和Pt层构成的多层结构的下电极。 电容器还包括由钛酸锶制成的电介质膜。 电容器还包括从下侧依次具有由WNx层（120μm）和W层（300nm）组成的多层结构的上部电极。 与电介质膜接触的上电极的表面由氮化钨层限定。

公开(公告)号：US5641702A

公开(公告)日：1997-06-24

申请号：US420649

申请日：1995-04-12

申请人： Keitaro Imai ,  Haruo Okano ,  Tomonori Aoyama ,  Yasunori Okayama

发明人： Keitaro Imai ,  Haruo Okano ,  Tomonori Aoyama ,  Yasunori Okayama

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108 ,  H01L29/49 ,  H01L29/92 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L27/10852 ,  H01L28/60 ,  H01L29/49 ,  H01L29/92 ,  H01L21/31604 ,  H01L28/55 ,  H01L28/56

摘要： A semiconductor integrated-circuit capacitor comprises a lower electrode formed on a semiconductor substrate, a capacitor insulating film formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. The capacitor insulating film is made of a high-permittivity material, and at least one of the upper and lower electrodes is made of a carbon film or a multilayered film composed of a carbon film and a conductor film other than carbon.

摘要翻译： 半导体集成电路电容器包括形成在半导体衬底上的下电极，形成在下电极上的电容器绝缘膜和形成在电容器绝缘膜上的上电极。 电容绝缘膜由高电容率材料制成，上下电极中的至少一个由碳膜或由碳膜和除碳以外的导体膜构成的多层膜制成。

公开(公告)号：US5455747A

公开(公告)日：1995-10-03

申请号：US265159

申请日：1994-06-24

申请人： Tomonori Aoyama

发明人： Tomonori Aoyama

IPC分类号： B60Q1/26 ,  B60Q1/30 ,  F21S8/10 ,  F21V5/00 ,  G02B5/32 ,  G03H1/22

CPC分类号： F21S48/218 ,  B60Q1/2607 ,  B60Q1/302 ,  F21S48/215 ,  F21S48/2212 ,  F21V5/002 ,  G02B5/32 ,  G03H1/30 ,  G03H2227/06 ,  G03H2250/34 ,  G03H2270/21

摘要： A lighting device includes a lighting device body, a light source placed within the lighting device body, a lens mounted in the front opening of the lighting device body, and a hologram attached to at least one specific area on the lens. At least part of light emitted from the light source is refracted by the hologram and a holographic image recorded in the hologram 16 is reproduced. A desired pattern is recorded is recorded in the form of a holographic image in the hologram. Visual presentation and light distribution characteristics, like those a conventional lighting device having a pattern of lens steps physically formed in the lens surface, can be obtained without additional optical parts.

摘要翻译： 照明装置包括照明装置主体，放置在照明装置主体内的光源，安装在照明装置主体的前开口中的透镜以及附着到透镜上的至少一个特定区域的全息图。 从光源发射的光的至少一部分被全息图折射，并且再现记录在全息图16中的全息图像。 在全息图中以全息图像的形式记录期望的图案。 与没有附加光学部件的情况相比，可以获得视觉呈现和光分布特性，就像在透镜表面物理上形成透镜台阶的传统照明装置一样。

公开(公告)号：US5440157A

公开(公告)日：1995-08-08

申请号：US094422

申请日：1993-07-16

申请人： Keitaro Imai ,  Haruo Okano ,  Tomonori Aoyama ,  Yasunori Okayama

发明人： Keitaro Imai ,  Haruo Okano ,  Tomonori Aoyama ,  Yasunori Okayama

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108 ,  H01L29/49 ,  H01L29/92 ,  H01L29/43

CPC分类号： H01L27/10852 ,  H01L28/60 ,  H01L29/49 ,  H01L29/92 ,  H01L21/31604 ,  H01L28/55 ,  H01L28/56

摘要： A semiconductor integrated-circuit capacitor comprises a lower electrode formed on a semiconductor substrate, a capacitor insulating film formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. The capacitor insulating film is made of a high-permittivity material, and at least one of the upper and lower electrodes is made of a carbon film or a multilayered film composed of a carbon film and a conductor film other than carbon.

摘要翻译： 半导体集成电路电容器包括形成在半导体衬底上的下电极，形成在下电极上的电容器绝缘膜和形成在电容器绝缘膜上的上电极。 电容绝缘膜由高电容率材料制成，上下电极中的至少一个由碳膜或由碳膜和除碳以外的导体膜构成的多层膜制成。

公开(公告)号：US5162263A

公开(公告)日：1992-11-10

申请号：US755820

申请日：1991-09-06

申请人： Iwao Kunishima ,  Tomonori Aoyama ,  Kyoichi Suguro

发明人： Iwao Kunishima ,  Tomonori Aoyama ,  Kyoichi Suguro

IPC分类号： H01L29/78 ,  H01L21/225 ,  H01L21/28 ,  H01L21/331 ,  H01L21/336 ,  H01L29/41 ,  H01L29/43 ,  H01L29/45 ,  H01L29/49

CPC分类号： H01L29/66272 ,  H01L21/2257 ,  H01L29/41 ,  H01L29/45 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66575 ,  Y10S148/019 ,  Y10S257/90

摘要： A semiconductor device comprises a semiconductor substrate of a first conductivity type. An insulative film and metal films are sequentially formed on the main top surface of the semiconductor substrate. Impurity diffusion layers of a second conductivity type are selectively formed on the main top surface of the semiconductor substrate. The semiconductor device further comprises metal compound layers consisting of constituting elements of the semiconductor substrate and a metal element. The metal compound layers are formed in the impurity diffusion layers in such a manner that they do not contact the insulative film, and the metal compound layers on the main back surface side of the semiconductor substrate have faces formed in parallel to the top surface of the semiconductor substrate. The method also includes cooling the top of the substrate to form a temperature gradient that results in increased dopant concentration at the bottom of a silicide layer.

摘要翻译： 半导体器件包括第一导电类型的半导体衬底。 绝缘膜和金属膜依次形成在半导体衬底的主顶表面上。 第二导电类型的杂质扩散层选择性地形成在半导体衬底的主顶表面上。 半导体器件还包括由半导体衬底的构成元件和金属元素组成的金属化合物层。 金属化合物层以不与绝缘膜接触的方式形成在杂质扩散层中，并且半导体衬底的主背面侧上的金属化合物层具有平行于该半导体衬底的顶表面形成的面 半导体衬底。 该方法还包括冷却衬底的顶部以形成导致硅化物层底部的掺杂剂浓度增加的温度梯度。

公开(公告)号：US08435872B2

公开(公告)日：2013-05-07

申请号：US12831604

申请日：2010-07-07

申请人： Tomonori Aoyama

发明人： Tomonori Aoyama

IPC分类号： H01L21/26

CPC分类号： H01L21/268 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/324 ,  H01L21/67017 ,  H01L21/823814 ,  H01L21/823821 ,  H01L29/6659 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7833

摘要： According to one embodiment, in a method for manufacturing a semiconductor device, a surface region of a semiconductor substrate is modified into an amorphous layer. A microwave is irradiated to the semiconductor substrate in which the amorphous layer is formed in a dopant-containing gas atmosphere so as to form a diffusion layer in the semiconductor substrate. The dopant is diffused into the amorphous layer and is activated.

摘要翻译： 根据一个实施例，在半导体器件的制造方法中，将半导体衬底的表面区域修改为非晶层。 在含有掺杂剂的气体气氛中对形成非晶层的半导体衬底照射微波，以在半导体衬底中形成扩散层。 掺杂剂扩散到非晶层中并被激活。