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公开(公告)号：US08247905B2
公开(公告)日：2012-08-21
申请号：US12538782
申请日：2009-08-10
IPC分类号： H01L29/40
CPC分类号： H01L21/76879 , H01L21/2885 , Y10S205/925
摘要： The present invention is related to a method for forming vertical conductive structures by electroplating. Specifically, a template structure is first formed, which includes a substrate, a discrete metal contact pad located on the substrate surface, an inter-level dielectric (ILD) layer over both the discrete metal contact pad and the substrate, and a metal via structure extending through the ILD layer onto the discrete metal contact pad. Next, a vertical via is formed in the template structure, which extends through the ILD layer onto the discrete metal contact pad. A vertical conductive structure is then formed in the vertical via by electroplating, which is conducted by applying an electroplating current to the discrete metal contact pad through the metal via structure. Preferably, the template structure comprises multiple discrete metal contact pads, multiple metal via structures, and multiple vertical vias for formation of multiple vertical conductive structures.
摘要翻译： 本发明涉及通过电镀形成垂直导电结构的方法。 具体地，首先形成模板结构，其包括衬底，位于衬底表面上的离散金属接触焊盘，分立金属接触焊盘和衬底两者之间的级间电介质（ILD）层，以及金属通孔结构 延伸穿过ILD层到分立的金属接触垫上。 接下来，在模板结构中形成垂直通孔，其延伸穿过ILD层到分立的金属接触垫上。 然后通过电镀在垂直通孔中形成垂直导电结构，电镀通过通过金属通孔结构将电镀电流施加到离散的金属接触焊盘来进行。 优选地，模板结构包括多个分立的金属接触焊盘，多个金属通孔结构以及用于形成多个垂直导电结构的多个垂直通孔。
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公开(公告)号：US08115191B2
公开(公告)日：2012-02-14
申请号：US12541559
申请日：2009-08-14
IPC分类号： H01L21/302
CPC分类号： C25D3/54 , B82Y10/00 , C25D5/022 , C25D7/123 , H01L21/0237 , H01L21/02532 , H01L21/02603 , H01L21/02628 , H01L21/02639 , Y10S977/762
摘要： A nanostructure comprising germanium, including wires of less than 1 micron in diameter and walls of less than 1 micron in width, in contact with the substrate and extending outward from the substrate is provided along with a method of preparation.
摘要翻译： 提供包括锗的纳米结构，其包括直径小于1微米的导线和宽度小于1微米的与基底接触并从基底向外延伸的纳米结构以及制备方法。
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公开(公告)号：US20110108115A1
公开(公告)日：2011-05-12
申请号：US12616745
申请日：2009-11-11
IPC分类号： H01L31/0296 , H01L31/18
CPC分类号： H01L31/0322 , C25D3/56 , H01L31/18 , Y02E10/541
摘要： Methods for forming photovoltaic devices, methods for forming semiconductor compounds, photovoltaic device and chemical solutions are presented. For example, a method for forming a photovoltaic device comprising a semiconductor layer includes forming the semiconductor layer by electrodeposition from an electrolyte solution. The electrolyte solution includes copper, indium, gallium, selenous acid (H2SeO3) and water.
摘要翻译： 提出了形成光伏器件的方法，形成半导体化合物的方法，光伏器件和化学溶液。 例如，形成包含半导体层的光电器件的方法包括通过电解液的电沉积来形成半导体层。 电解质溶液包括铜，铟，镓，硒酸（H 2 SeO 3）和水。
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34.发明申请公开(公告)号：US20090302353A1
公开(公告)日：2009-12-10
申请号：US12541499
申请日：2009-08-14
申请人： Stephen W. Bedell , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw , Devendra K. Sadana , Katherine L. Saenger
发明人： Stephen W. Bedell , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw , Devendra K. Sadana , Katherine L. Saenger
IPC分类号： H01L29/165 , H01L29/16 , H01L29/78 , H01L27/092 , H01L29/12
CPC分类号： H01L21/823807 , H01L21/0237 , H01L21/02532 , H01L21/02628 , H01L21/02636 , H01L21/02639 , H01L21/28255 , H01L29/1054 , H01L29/78
摘要： Methods for electrodepositing germanium on various semiconductor substrates such as Si, Ge, SiGe, and GaAs are provided. The electrodeposited germanium can be formed as a blanket or patterned film, and may be crystallized by solid phase epitaxy to the orientation of the underlying semiconductor substrate by subsequent annealing. These plated germanium layers may be used as the channel regions of high-mobility channel field effect transistors (FETs) in complementary metal oxide semiconductor (CMOS) circuits.
摘要翻译： 提供了在诸如Si，Ge，SiGe和GaAs的各种半导体衬底上电沉积锗的方法。 电沉积锗可以形成为覆盖或图案化的膜，并且可以通过后续退火使固相外延结晶到下面的半导体衬底的取向。 这些电镀锗层可以用作互补金属氧化物半导体（CMOS）电路中的高迁移率沟道场效应晶体管（FET）的沟道区。
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35.发明授权Memory storage devices comprising different ferromagnetic material layers, and methods of making and using the same 有权包含不同铁磁材料层的存储器存储装置及其制造和使用方法公开(公告)号：US07539051B2
公开(公告)日：2009-05-26
申请号：US11620445
申请日：2007-01-05
IPC分类号： G11C11/15
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1675 , Y10S977/933
摘要： A memory storage device that contains alternating first and second ferromagnetic material layers is provided. Each first ferromagnetic material layer has a first layer thickness (L1) and a first critical current density (JC1), and each second ferromagnetic material layer has a second layer thickness (L2) and a second critical current density (JC2), provided that JC1
摘要翻译： 提供了包含交替的第一和第二铁磁材料层的存储器存储装置。 每个第一铁磁材料层具有第一层厚度（L1）和第一临界电流密度（JC1），并且每个第二铁磁材料层具有第二层厚度（L2）和第二临界电流密度（JC2），条件是JC1
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公开(公告)号：US20080191317A1
公开(公告)日：2008-08-14
申请号：US11674453
申请日：2007-02-13
CPC分类号： H01L29/0665 , B82Y10/00 , C30B11/12 , C30B29/60 , H01L21/0237 , H01L21/02381 , H01L21/02521 , H01L21/02603 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L21/02653 , H01L21/28525 , H01L29/0673 , H01L29/0676 , H01L2221/1094
摘要： Disclosed herein is a method of forming a nanostructure having nanowires by forming a mask with at least one opening on a surface of a substrate, to expose a portion of the surface of the substrate; depositing particles of a metal capable of catalyzing semiconductor nanowire growth on the exposed surface of the substrate by electroplating or electroless plating; and growing nanowires on the plated substrate with a precursor gas by a vapor-liquid-solid (VLS) process. Also disclosed is a nanostructure including nanowires prepared by the above method.
摘要翻译： 本文公开了一种通过在衬底的表面上形成具有至少一个开口的掩模来形成具有纳米线的纳米结构的方法，以暴露衬底表面的一部分; 通过电镀或化学电镀将能够催化半导体纳米线生长的金属的颗粒沉积在基板的暴露表面上; 并通过气 - 液 - 固（VLS）工艺在具有前体气体的电镀衬底上生长纳米线。 还公开了包括通过上述方法制备的纳米线的纳米结构。
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37.发明申请MEMORY STORAGE DEVICES COMPRISING DIFFERENT FERROMAGNETIC MATERIAL LAYERS, AND METHODS OF MAKING AND USING THE SAME 有权包含不同纤维素材料层的记忆存储装置及其制造和使用方法公开(公告)号：US20080165576A1
公开(公告)日：2008-07-10
申请号：US11620445
申请日：2007-01-05
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1675 , Y10S977/933
摘要： A memory storage device that contains alternating first and second ferromagnetic material layers is provided. Each first ferromagnetic material layer has a first layer thickness (L1) and a first critical current density (JC1), and each second ferromagnetic material layer has a second layer thickness (L2) and a second critical current density (JC2), provided that JC1
摘要翻译： 提供了包含交替的第一和第二铁磁材料层的存储器存储装置。 每个第一铁磁材料层具有第一层厚度（L L1> 1）和第一临界电流密度（J C 1 H 1），并且每个第二铁磁材料层具有第二层厚度 （L 2 2）和第二临界电流密度（JC 2 N 2），条件是JC 1 < L 1大于约300nm，L 2 2范围为约20nm至约200nm。 该装置还包括由畴壁分开的相反方向的交替磁畴。 在施加驱动电流时，磁畴和畴壁可在第一和第二铁磁材料层上移动。 相应地，数据可以作为磁畴和畴壁的位置存储在存储器存储装置中。
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公开(公告)号：US08871560B2
公开(公告)日：2014-10-28
申请号：US13571048
申请日：2012-08-09
IPC分类号： H01L31/032 , H01L31/0749
CPC分类号： H01L31/0326 , H01L31/1864 , Y02E10/50 , Y02P70/521
摘要： Embodiments relate to a method for annealing a solar cell structure including forming an absorber layer on a molybdenum (Mo) layer of a solar cell base structure. The solar cell base structure includes a substrate and the Mo layer is located on the substrate. The absorber layer includes a semiconductor chalcogenide material. Annealing the solar cell base structure is performed by exposing an outer layer of the solar cell base structure to a plasma.
摘要翻译： 实施例涉及一种用于退火太阳能电池结构的方法，包括在太阳能电池基底结构的钼（Mo）层上形成吸收层。 太阳能电池基体结构包括衬底，Mo层位于衬底上。 吸收层包括半导体硫族化物材料。 通过将太阳能电池基底结构的外层暴露于等离子体来进行太阳能电池基体结构的退火。
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39.发明申请Structure and Method of Fabricating a CZTS Photovoltaic Device by Electrodeposition 有权通过电沉积制造CZTS光伏器件的结构和方法公开(公告)号：US20120061790A1
公开(公告)日：2012-03-15
申请号：US12878746
申请日：2010-09-09
IPC分类号： H01L31/032 , H01L31/18
CPC分类号： H01L31/0272 , C25D5/10 , C25D5/50 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02614 , H01L21/02628 , H01L31/0224 , H01L31/0326 , H01L31/072 , H01L31/18 , H01L2924/10822 , Y02E10/50
摘要： Techniques for using electrodeposition to form absorber layers in diodes (e.g., solar cells) are provided. In one aspect, a method for fabricating a diode is provided. The method includes the following steps. A substrate is provided. A backside electrode is formed on the substrate. One or more layers are electrodeposited on the backside electrode, wherein at least one of the layers comprises copper, at least one of the layers comprises zinc and at least one of the layers comprises tin. The layers are annealed in an environment containing a sulfur source to form a p-type CZTS absorber layer on the backside electrode. An n-type semiconductor layer is formed on the CZTS absorber layer. A transparent conductive layer is formed on the n-type semiconductor layer. A diode is also provided.
摘要翻译： 提供了使用电沉积在二极管（如太阳能电池）中形成吸收层的技术。 在一个方面，提供了制造二极管的方法。 该方法包括以下步骤。 提供基板。 在基板上形成背面电极。 一个或多个层电沉积在背面电极上，其中至少一个层包含铜，至少一个层包含锌，并且至少一层包括锡。 这些层在包含硫源的环境中退火，以在背面电极上形成p型CZTS吸收层。 在CZTS吸收层上形成n型半导体层。 在n型半导体层上形成透明导电层。 还提供二极管。
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40.发明申请ELECTRODEPOSITION METHODS OF GALLIUM AND GALLIUM ALLOY FILMS AND RELATED PHOTOVOLTAIC STRUCTURES 审中-公开镓和镓合金膜的电沉积方法和相关的光伏结构公开(公告)号：US20120055612A1
公开(公告)日：2012-03-08
申请号：US12874496
申请日：2010-09-02
申请人： Shafaat Ahmed , Hariklia Deligianni , Qiang Huang , Kathleen B. Reuter , Lubomyr T. Romankiw , Raman Vaidyanathan
发明人： Shafaat Ahmed , Hariklia Deligianni , Qiang Huang , Kathleen B. Reuter , Lubomyr T. Romankiw , Raman Vaidyanathan
CPC分类号： H01L31/0322 , C25D3/38 , C25D3/54 , C25D3/58 , C25D5/10 , C25D5/56 , C25D7/126 , H01L21/02568 , H01L21/02628 , H01L23/3738 , H01L31/0749 , H01L2224/73253 , Y02E10/541
摘要： Photovoltaic devices and methods for preparing a p-type semiconductor layer for the photovoltaic devices generally include electroplating a layer of gallium or a gallium alloy onto a conductive layer by contacting the conductive layer with a plating bath free of complexing agents including a gallium salt, methane sulfonic acid or sodium sulfate and an organic additive comprising at least one nitrogen atom and/or at least one sulfur atom, and a solvent; adjusting a pH of the solution to be less than 2.6 or greater than 12.6. The photovoltaic device includes an impurity in the p-type semiconductor layer selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof. Various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed by electroplating the gallium or gallium alloys in this manner. Also disclosed are processes for forming a thermal interface of gallium or a gallium alloy with the electroplating process.
摘要翻译： 用于制备用于光伏器件的p型半导体层的光伏器件和方法通常包括通过使导电层与不含络合剂的镀浴接触来将一层镓或镓合金电镀到导电层上，所述络合剂包括镓盐，甲烷 磺酸或硫酸钠和包含至少一个氮原子和/或至少一个硫原子的有机添加剂和溶剂; 调节溶液的pH值小于2.6或大于12.6。 光电器件包括选自砷，锑，铋及其混合物的p型半导体层中的杂质。 可以通过以这种方式电镀镓或镓合金来形成用于形成CIS，CGS和CIGS p型半导体结构的各种光伏前体层。 还公开了通过电镀工艺形成镓或镓合金的热界面的工艺。
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