摘要:
A silver halide photographic light sensitive material is disclosed, which is contains a novel cyan coupler excellent in spectral absorption, absorption coefficient and fastness. The cyan coupler is represented by the following Formula I; ##STR1## wherein R.sub.1 and R.sub.2 each represent a substituent; R.sub.3 represents a hydrogen atom, an alkyl group, an aryl group, a --COR.sub.4 group, a --COOR.sub.4 group, a ##STR2## group, an --SO.sub.2 R.sub.4 or an ##STR3## group in which R.sub.4 represents an alkyl group, an aryl group or a heterocyclic group, R.sub.5 represents a hydrogen atom or an alkyl group; X represents a hydrogen atom or a group capable of being split off upon reaction with the oxidized product of a color developing agent; m represent an integer of from 0 to 4; and n represents an integer of from 0 to 5.
摘要:
A silver halide color photographic light-sensitive material is disclosed, which has a silver halide emulsion layer containing a novel cyan coupler represented by the following Formula I: ##STR1## wherein B is an organic group comprising a carbon atom, nitrogen atom, oxygen atom or sulfur atom directly bonded to the imidazole ring; R.sub.1 and R.sub.2 each are a substituent; m is an integer of 0 to 4, n is an integer of 0 to 5, provided that the R.sub.1 S or R.sub.2 S each may be the same with or different from each other when m or n is 2 or more; and X is a group capable of being split off upon coupling reaction with the oxidation product of a color developing agent.
摘要:
There is provided a polycrystalline aluminum nitride substrate that is effective in growing a GaN crystal. The polycrystalline aluminum nitride base material for use as a substrate material for grain growth of GAN-base semiconductors, contains 1 to 10% by weight of a sintering aid component and has a thermal conductivity of not less than 150 W/m·K, the substrate having a surface free from recesses having a maximum diameter of more than 200 μm.
摘要:
There is provided a polycrystalline aluminum nitride substrate that is effective in growing a GaN crystal. The polycrystalline aluminum nitride base material for use as a substrate material for grain growth of GAN-base semiconductors, contains 1 to 10% by weight of a sintering aid component and has a thermal conductivity of not less than 150 W/m·K, the substrate having a surface free from recesses having a maximum diameter of more than 200 μm.
摘要:
Problem is to provide a ceramic-metal composite and a semiconductor device that exhibits high bonding strength, heat cycle resistance, durability, and reliability even if the ceramic-metal composite is used in a power module.A ceramic-metal composite includes a ceramic substrate, an active metal brazing alloy layer, and a metal plate bonded to the ceramic substrate through the active metal brazing alloy layer disposed therebetween. The active metal brazing alloy layer contains a transition metal.
摘要:
In the production of a ceramic substrate (1) with a level difference (3), a surface of a fired substrate obtained by firing of a ceramic green sheet is honed to form the level difference (3). Alternatively, a level difference is first formed through processing of a ceramic green sheet, laminating of a ceramic green sheet, or the like, and thereafter the ceramic green sheet is fired to obtain a fired substrate (ceramic substrate) (1) with a level difference (3).
摘要:
The present invention provides a ceramic circuit board comprising: a ceramic substrate and a metal circuit plate bonded to the ceramic substrate through a brazing material layer; wherein the brazing material layer is composed of Al—Si group brazing material and an amount of Si contained in the brazing material is 7 wt % or less. In addition, it is preferable to form a thinned portion, holes, or grooves to outer peripheral portion of the metal circuit plate. According to the above structure of the present invention, there can be provided a ceramic circuit board having both high bonding strength and high heat-cycle resistance, and capable of increasing an operating reliability as electronic device.
摘要:
An image forming method is disclosed, comprising exposing a silver halide photographic light sensitive material comprising a support having thereon a silver halide emulsion layer containing a dye forming coupler and processing the exposed photographic material, wherein the coupler has, in its molecule, at least two sites capable of chelating with a metal ion to form a 5-membered or 6-membered chelate ring, thereby forming, together with a developing agent and the metal ion, a chelate dye.
摘要:
An image forming element and an image forming method using the same are disclosed. The element comprises a support having thereon a image forming layer comprising a binder, an aromatic aldehyde, a cobalt (III) complex represented by formula I, and a compound represented by formula II or formula III;Co.sup.3 +(L)p(X)q (I)wherein L is a coordination compound capable of forming a complex compound with the cobalt cation and at least one of which is NH.sub.3 or a primary amine; X is a counter anion; p is an integer of 1 to 6; when p is 2 to 6, the plural Ls may be the same or different; and q is an integer of 1 to 3, ##STR1## wherein lig is a coordination compound capable of forming with the cobalt cation; R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are each independently an alkyl group, an aryl group, an aralkyl group, an alkenyl group, an alkinyl group, a cycloalkyl group, a heterocyclic group or a cyano group; n.sub.1 is an integer of 1 to 6, when n.sub.1 is 2 to 6, the plural ligs may be the same or different; and m is an integer of 1 to 3, ##STR2## wherein Dye is a cationic dye; R.sub.5, R.sub.6, R.sub.7 and R.sub.8 are each independently an alkyl group, an aryl group, an aralkyl group, an alkenyl group, an alkinyl group, a heterocyclic group or a cyano group; n.sub.2 is an integer of 1 to 3, when n.sub.2 is 2 or 3, the plural counter ions may be the same or different.
摘要:
A novel organic non-linear optical material and a device using the same are disclosed. The material hardly makes reversal symmetrical molecular configuration in a bulk state such as a crystal and a thin layer and shows a high non-linear optical effect. A non-linear optical device using the material has an excellent properties. The organic non-linear optical material is comprised of the following compound: ##STR1## wherein R.sub.1, R.sub.3 and R.sub.4 are independently a hydrogen atom, a cyano group, a phenyl group, an amino group, an alkoxy group, an acylamino group, an alkylthio group, an alkyl group, an alkoxycarbonyl group, carbamoyl group or a heterocyclic group, provided that R.sub.3 is allowed to link together with R.sub.4 to form a ring and R.sub.1, R.sub.3 and R.sub.4 are not hydrogen atom at the same time; R.sub.2 is a hydrogen atom, an alkyl group or an acyl group; and said groups represented by R.sub.1, R.sub.2, R.sub.3, R.sub.4 and the ring formed by linking the groups represented by R.sub.3 and R.sub.4 are allowed to have a substituent.