公开(公告)号：US20110151676A1

公开(公告)日：2011-06-23

申请号：US13039724

申请日：2011-03-03

申请人： Nitin K. Ingle ,  Jing Tang ,  Yi Zheng ,  Zheng Yuan ,  Zhenbin Ge ,  Xinliang Lu ,  Chien-Teh Kao ,  Vikash Banthia ,  William H. McClintock ,  Mei Chang

发明人： Nitin K. Ingle ,  Jing Tang ,  Yi Zheng ,  Zheng Yuan ,  Zhenbin Ge ,  Xinliang Lu ,  Chien-Teh Kao ,  Vikash Banthia ,  William H. McClintock ,  Mei Chang

IPC分类号： H01L21/31

CPC分类号： H01L21/67253 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/76232

摘要： A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.

摘要翻译： 一种用于形成半导体结构的方法包括跨越衬底的表面形成多个特征，其中至少一个空间位于两个相邻特征之间。 第一电介质层形成在特征上并且在至少一个空间内。 第一介电层的一部分与衍生自第一前体和第二前体的反应物相互作用以形成第一固体产物。 第一固体产物被分解以基本上除去第一介电层的部分。 形成第二电介质层以基本上填充至少一个空间。

公开(公告)号：US07674684B2

公开(公告)日：2010-03-09

申请号：US12178051

申请日：2008-07-23

申请人： Jing Tang ,  Nitin K. Ingle ,  Zheng Yuan ,  Rossella Mininni

发明人： Jing Tang ,  Nitin K. Ingle ,  Zheng Yuan ,  Rossella Mininni

IPC分类号： H01L21/76

CPC分类号： H01L21/76224

摘要： A deposition method for releasing a stress buildup of a feature over a semiconductor substrate with dielectric material is provided. The feature includes lines separated by a gap. The method includes forming a liner layer over the feature on the semiconductor substrate in a chamber. A stress of the liner layer over the feature is released to substantially reduce bending of the lines of the feature. A dielectric film is deposited over the stress-released liner layer to substantially fill the gap of the feature.

摘要翻译： 提供了一种通过电介质材料释放在半导体衬底上的特征的应力累积的沉积方法。 该功能包括由间隙隔开的线。 该方法包括在腔室中的半导体衬底上的特征上形成衬垫层。 衬垫层在特征上的应力被释放，以显着减少特征线的弯曲。 电介质膜沉积在应力释放衬垫层上，以基本上填充特征的间隙。

公开(公告)号：US20100022067A1

公开(公告)日：2010-01-28

申请号：US12178051

申请日：2008-07-23

申请人： Jing Tang ,  Nitin K. Ingle ,  Zheng Yuan ,  Rossella Mininni

发明人： Jing Tang ,  Nitin K. Ingle ,  Zheng Yuan ,  Rossella Mininni

IPC分类号： H01L21/762

CPC分类号： H01L21/76224

摘要： A deposition method for releasing a stress buildup of a feature over a semiconductor substrate with dielectric material is provided. The feature includes lines separated by a gap. The method includes forming a liner layer over the feature on the semiconductor substrate in a chamber. A stress of the liner layer over the feature is released to substantially reduce bending of the lines of the feature. A dielectric film is deposited over the stress-released liner layer to substantially fill the gap of the feature.

摘要翻译： 提供了一种通过电介质材料释放在半导体衬底上的特征的应力累积的沉积方法。 该功能包括由间隙隔开的线。 该方法包括在腔室中的半导体衬底上的特征上形成衬垫层。 衬垫层在特征上的应力被释放，以显着减少特征线的弯曲。 电介质膜沉积在应力释放衬垫层上，以基本上填充特征的间隙。

公开(公告)号：US07642171B2

公开(公告)日：2010-01-05

申请号：US10990002

申请日：2004-11-16

申请人： Nitin K. Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali J. L. Forstner ,  Rong Pan

发明人： Nitin K. Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali J. L. Forstner ,  Rong Pan

IPC分类号： H01L21/76

CPC分类号： H01L21/324 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/67115 ,  H01L21/76224 ,  H01L21/76283

摘要： A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.

摘要翻译： 一种退火包括含有电介质材料的沟槽的衬底的方法，所述方法包括在包含含氧气体的第一气氛中在大约200℃至大约800℃的第一温度下对衬底退火，以及退火衬底 在约800℃至约1400℃的第二温度下在不含氧气的第二气氛中。 另外，包括含有电介质材料的沟槽的衬底的退火方法，该方法包括在含氧气体存在下，在约400℃至约800℃的第一温度下退火衬底， 含氧气体离开衬底，并将衬底升高至约900℃至约1100℃的第二温度，以在缺氧的气氛中进一步对衬底进行退火。

公开(公告)号：US20080182382A1

公开(公告)日：2008-07-31

申请号：US11947674

申请日：2007-11-29

申请人： Nitin K. Ingle ,  Jing Tang ,  Yi Zheng ,  Zheng Yuan ,  Zhenbin Ge ,  Xinliang Lu ,  Chien-Teh Kao ,  Vikash Banthia ,  William H. McClintock ,  Mei Chang

发明人： Nitin K. Ingle ,  Jing Tang ,  Yi Zheng ,  Zheng Yuan ,  Zhenbin Ge ,  Xinliang Lu ,  Chien-Teh Kao ,  Vikash Banthia ,  William H. McClintock ,  Mei Chang

IPC分类号： H01L21/762

CPC分类号： H01L21/67253 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/76232

摘要： A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.

摘要翻译： 一种用于形成半导体结构的方法包括跨越衬底的表面形成多个特征，其中至少一个空间位于两个相邻特征之间。 第一电介质层形成在特征上并且在至少一个空间内。 第一介电层的一部分与衍生自第一前体和第二前体的反应物相互作用以形成第一固体产物。 第一固体产物被分解以基本上除去第一介电层的部分。 形成第二电介质层以基本上填充至少一个空间。

公开(公告)号：US06905940B2

公开(公告)日：2005-06-14

申请号：US10247672

申请日：2002-09-19

申请人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

发明人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/762

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45512 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/958

摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

摘要翻译： 本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。 在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。 在预沉积气体流动稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，从而以相对较慢的速率形成高度保形的氧化硅。 在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。

公开(公告)号：US06544345B1

公开(公告)日：2003-04-08

申请号：US09615035

申请日：2000-07-12

申请人： Bruce E. Mayer ,  Robert H. Chatham, III ,  Nitin K. Ingle ,  Zheng Yuan

发明人： Bruce E. Mayer ,  Robert H. Chatham, III ,  Nitin K. Ingle ,  Zheng Yuan

IPC分类号： B08B704

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  Y10S438/905

摘要： An in-situ, two step or combination, method and system for cleaning of semiconductor manufacturing equipment is provided. The present invention utilizes two separate fluorine based chemistries in each step which selectively target the removal of different types of deposits that build up on the equipment surfaces. In particular, powdery and dense film-like solid deposits, as well as a combination of both, build up on the chamber surfaces and associated equipment components. These two types of deposits are removed selectively by the present invention. Such selective targeting of combined cleaning steps, yields an improved cleaning technique. In another embodiment, the method and system of the present invention provides for cleaning of the chamber and associated equipment using separate steps with different chemicals, and then performing these steps in a variety of desired sequences.

摘要翻译： 提供了现场，两步或组合，半导体制造设备的清洁方法和系统。 本发明在每个步骤中使用两个单独的基于氟的化学物质，其选择性地靶向在设备表面上积累的不同类型的沉积物的去除。 特别地，粉末和致密的膜状固体沉积物以及两者的组合积聚在室表面和相关的设备部件上。 这两种沉积物通过本发明有选择地被去除。 组合清洁步骤的这种选择性靶向产生改进的清洁技术。 在另一个实施方案中，本发明的方法和系统提供了使用具有不同化学物质的分离步骤清洁腔室和相关设备，然后以各种期望的顺序执行这些步骤。

公开(公告)号：US08808563B2

公开(公告)日：2014-08-19

申请号：US13439079

申请日：2012-04-04

申请人： Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

发明人： Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

IPC分类号： B44C1/22 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/3213

CPC分类号： H01L21/3065 ,  H01J37/32357 ,  H01L21/3081 ,  H01L21/32137

摘要： Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.

摘要翻译： 描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括由含氟前体和含氢前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与暴露的硅区域反应。 等离子体流出物与图案化的异质结构反应以选择性地除去硅，同时非常缓慢地除去其它暴露的材料。 硅选择性部分地导致远离等离子体中含氢前体的优势，氢终止在图案化异质结构上的表面。 含氟前体的流速要低得多，在氢封端的硅上逐渐取代氟氢，从而从硅的暴露区域选择性除去硅。 这些方法可用于选择性地除去硅比氧化硅，氮化硅和各种含金属材料更快的硅。

公开(公告)号：US08647992B2

公开(公告)日：2014-02-11

申请号：US12974495

申请日：2010-12-21

申请人： Jingmei Liang ,  Nitin K. Ingle

发明人： Jingmei Liang ,  Nitin K. Ingle

IPC分类号： H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/56

CPC分类号： H01L21/02164 ,  C23C16/345 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02326 ,  H01L21/02337

摘要： Methods of forming silicon oxide layers are described. The methods include mixing a carbon-free silicon-containing precursor with a radical-nitrogen precursor, and depositing a silicon-and-nitrogen-containing layer on a substrate. The radical-nitrogen precursor is formed in a plasma by flowing a hydrogen-and-nitrogen-containing precursor into the plasma. Prior to depositing the silicon-and-nitrogen-containing layer, a silicon oxide liner layer is formed to improve adhesion, smoothness and flowability of the silicon-and-nitrogen-containing layer. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film. Methods also include forming a silicon oxide liner layer before applying a spin-on silicon-containing material.

摘要翻译： 描述形成氧化硅层的方法。 所述方法包括将无碳的含硅前体与自由基 - 氮前体混合，并在基底上沉积含硅和氮的层。 通过使含氢和氮的前体流入等离子体，在等离子体中形成自由基 - 氮前体。 在沉积含硅和氮的层之前，形成氧化硅衬层以提高含硅和含氮层的粘附性，平滑性和流动性。 通过固化和退火膜可以将含硅和氮的层转化为含硅和氧的层。 方法还包括在施加旋涂的含硅材料之前形成氧化硅衬层。

公开(公告)号：US08563445B2

公开(公告)日：2013-10-22

申请号：US13024487

申请日：2011-02-10

申请人： Jingmei Liang ,  Xiaolin Chen ,  DongQing Li ,  Nitin K. Ingle

发明人： Jingmei Liang ,  Xiaolin Chen ,  DongQing Li ,  Nitin K. Ingle

IPC分类号： H01L21/469

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02326 ,  H01L21/76837

摘要： Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., a silicon-nitrogen-hydrogen (Si—N—H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. The carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with the radical-nitrogen precursor. Because the silicon-and-nitrogen film is formed without carbon, the conversion of the film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows the optical properties of the conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer has been found to improve the wetting properties and allows flowable films to more completely fill the trench.

摘要翻译： 描述了用于形成含有硅和氮的保形电介质层（例如，硅 - 氮 - 氢（Si-N-H）膜）的方法，材料和系统，其来自无碳硅氮前驱物和自由基 - 氮前体。 主要通过与自由基 - 氮前体接触激发无碳硅和氮前体。 由于硅和氮膜不形成碳，所以将薄膜转化成硬化的氧化硅是在较少的孔形成和较小的体积收缩下进行的。 沉积的含硅和氮的膜可以全部或部分地转化为氧化硅，这允许保形介电层的光学特性是可选择的。 可以在低温下进行薄的含硅和氮的膜的沉积，以在衬底沟槽中形成衬垫层。 已经发现低温衬里层改善了润湿性能，并允许可流动膜更完全地填充沟槽。