Magnetic scanning system with improved efficiency
    32.
    发明授权
    Magnetic scanning system with improved efficiency 有权
    磁性扫描系统提高了效率

    公开(公告)号:US08138484B2

    公开(公告)日:2012-03-20

    申请号:US12769226

    申请日:2010-04-28

    Applicant: Bo Vanderberg

    Inventor: Bo Vanderberg

    Abstract: Some aspects of the present invention facilitate ion implantation by using a magnetic beam scanner that includes first and second magnetic elements having a beam path region therebetween. One or more magnetic flux compression elements are disposed proximate to the beam path region and between the first and second magnetic elements. During operation, the first and magnetic elements cooperatively generate an oscillatory time-varying magnetic field in the beam path region to scan an ion beam back and forth in time. The one or more magnetic flux compression elements compress the magnetic flux provided by the first and second magnetic elements, thereby reducing the amount of power required to magnetically scan the beam back and forth (relative to previous implementations). Other scanners, systems, and methods are also disclosed.

    Abstract translation: 本发明的一些方面通过使用包括其间具有光束路径区域的第一和第二磁性元件的磁束扫描器来促进离子注入。 一个或多个磁通量压缩元件设置在光束路径区域附近以及第一和第二磁性元件之间。 在操作期间,第一和磁性元件协同地在光束路径区域中产生振荡时变磁场,以及时扫描离子束。 一个或多个磁通量压缩元件压缩由第一和第二磁性元件提供的磁通量,从而减少磁力扫描光束所需的功率量(相对于先前的实施方式)。 还公开了其他扫描仪,系统和方法。

    PLASMA MEDIATED ASHING PROCESSES
    33.
    发明申请
    PLASMA MEDIATED ASHING PROCESSES 审中-公开
    等离子体介质吸附过程

    公开(公告)号:US20120024314A1

    公开(公告)日:2012-02-02

    申请号:US12844193

    申请日:2010-07-27

    CPC classification number: G03F7/427 H01J2237/3342

    Abstract: Plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

    Abstract translation: 用于从衬底去除有机材料的等离子体介质灰化过程通常包括将衬底暴露于等离子体以选择性地从衬底去除光致抗蚀剂,植入的光刻胶,聚合物和/或残余物,其中等离子体包含活性氮和活性氧的比例, 大于可由包含氧气和氮气的气体混合物的等离子体获得的活性氮和活性氧的比例。 等离子体显示出高通量,同时最小化和/或防止底物氧化和掺杂剂漂白。 还描述了等离子体装置。

    Magnetic Scanning System with Improved Efficiency
    34.
    发明申请
    Magnetic Scanning System with Improved Efficiency 有权
    提高效率的磁扫描系统

    公开(公告)号:US20110266456A1

    公开(公告)日:2011-11-03

    申请号:US12769226

    申请日:2010-04-28

    Applicant: Bo Vanderberg

    Inventor: Bo Vanderberg

    Abstract: Some aspects of the present invention facilitate ion implantation by using a magnetic beam scanner that includes first and second magnetic elements having a beam path region therebetween. One or more magnetic flux compression elements are disposed proximate to the beam path region and between the first and second magnetic elements. During operation, the first and magnetic elements cooperatively generate an oscillatory time-varying magnetic field in the beam path region to scan an ion beam back and forth in time. The one or more magnetic flux compression elements compress the magnetic flux provided by the first and second magnetic elements, thereby reducing the amount of power required to magnetically scan the beam back and forth (relative to previous implementations). Other scanners, systems, and methods are also disclosed.

    Abstract translation: 本发明的一些方面通过使用包括其间具有光束路径区域的第一和第二磁性元件的磁束扫描器来促进离子注入。 一个或多个磁通量压缩元件设置在光束路径区域附近以及第一和第二磁性元件之间。 在操作期间,第一和磁性元件协同地在光束路径区域中产生振荡时变磁场,以及时扫描离子束。 一个或多个磁通量压缩元件压缩由第一和第二磁性元件提供的磁通量,从而减少磁力扫描光束所需的功率量(相对于先前的实施方式)。 还公开了其他扫描仪,系统和方法。

    Ion implantation with diminished scanning field effects

    公开(公告)号:US08008636B2

    公开(公告)日:2011-08-30

    申请号:US12338644

    申请日:2008-12-18

    Inventor: Edward C. Eisner

    Abstract: Ion implantation systems and scanning systems are provided, in which a focus adjustment component is provided to adjust a focal property of an ion beam to diminish zero field effects of the scanner upon the ion beam. The focal property may be adjusted in order to improve the consistency of the beam profile scanned across the workpiece, or to improve the consistency of the ion implantation across the workpiece. Methods are disclosed for providing a scanned ion beam to a workpiece, comprising scanning the ion beam to produce a scanned ion beam, adjusting a focal property of an ion beam in relation to zero field effects of the scanner upon the ion beam, and directing the ion beam toward the workpiece.

    System and method of beam energy identification for single wafer ion implantation
    37.
    发明授权
    System and method of beam energy identification for single wafer ion implantation 有权
    单晶离子注入的束能识别系统和方法

    公开(公告)号:US07973290B2

    公开(公告)日:2011-07-05

    申请号:US12190736

    申请日:2008-08-13

    Applicant: Shu Satoh

    Inventor: Shu Satoh

    Abstract: The present invention involves a beam energy identification system, comprising an accelerated ion beam, wherein the accelerated ion beam is scanned in a fast scan axis within a beam scanner, wherein the beam scanner is utilized to deflect the accelerated ion beam into narrow faraday cups downstream of the scanner, wherein a difference in scanner voltage or current to position the beam into the Faraday cups is utilized to calculated the energy of ion beam.

    Abstract translation: 本发明涉及一种束能量识别系统,其包括加速的离子束,其中加速的离子束以束扫描器内的快速扫描轴扫描,其中该束扫描器用于将加速的离子束偏转到下游的法拉第杯中 其中利用扫描仪电压或电流将光束定位到法拉第杯中的差异来计算离子束的能量。

    Wafer grounding method for electrostatic clamps
    38.
    发明授权
    Wafer grounding method for electrostatic clamps 有权
    用于静电夹的晶圆接地方法

    公开(公告)号:US07952851B2

    公开(公告)日:2011-05-31

    申请号:US12262399

    申请日:2008-10-31

    CPC classification number: H01L21/6831 H01L21/68742

    Abstract: An electrostatic chuck and method for clamping and de-clamping a workpiece is provided. The ESC comprises a clamping plate having a clamping surface, and one or more electrodes. An electric potential applied to the one or more electrodes selectively clamps the workpiece to the clamping surface. An arc pin operably coupled to the clamping plate and a power source provides an arc for penetrating an insulating layer of the workpiece. The arc pin is selectively connected to an electrical ground, wherein upon removal of the insulative layer of the workpiece, the arc pin provides an electrical ground connection to the workpiece.

    Abstract translation: 提供了用于夹紧和去夹紧工件的静电卡盘和方法。 ESC包括具有夹紧表面的夹板和一个或多个电极。 施加到一个或多个电极的电位选择性地将工件夹紧到夹紧表面。 可操作地联接到夹持板的电弧销和电源提供用于穿透工件的绝缘层的电弧。 弧形销被选择性地连接到电接地,其中在移除工件的绝缘层时,电弧销提供与工件的电接地连接。

    System and method of controlling broad beam uniformity
    39.
    发明授权
    System and method of controlling broad beam uniformity 有权
    控制宽光束均匀性的系统和方法

    公开(公告)号:US07858955B2

    公开(公告)日:2010-12-28

    申请号:US12145713

    申请日:2008-06-25

    Abstract: An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.

    Abstract translation: 一种离子束均匀性控制系统,其中所述均匀性控制系统包括包围独立控制的气体射流阵列的差分泵送室,其中单独控制的气体射流的气体压力由控制器供电以改变电荷交换离子的分数 ,并且其中气体和离子之间的电荷交换反应改变具有宽离子束的原始电荷状态的离子的分数,其中使用产生磁场的偏转器去除宽离子束的电荷交换部分, 用于测量宽离子束分布的法拉第杯型材分析仪; 以及基于提供给控制器的反馈来调节单独控制的气体射流,以获得所需的宽离子束。

    Plasma electron flood for ion beam implanter
    40.
    发明授权
    Plasma electron flood for ion beam implanter 有权
    离子束注入机的等离子体电子泛滥

    公开(公告)号:US07800083B2

    公开(公告)日:2010-09-21

    申请号:US11935738

    申请日:2007-11-06

    Abstract: A plasma electron flood system, comprising a housing configured to contain a gas, and comprising an elongated extraction slit, and a cathode and a plurality of anodes residing therein and wherein the elongated extraction slit is in direct communication with an ion implanter, wherein the cathode emits electrons that are drawn to the plurality of anodes through a potential difference therebetween, wherein the electrons are released through the elongated extraction slit as an electron band for use in neutralizing a ribbon ion beam traveling within the ion implanter.

    Abstract translation: 一种等离子体电子泛洪系统,包括构造成容纳气体的壳体,并且包括细长的提取狭缝以及驻留在其中的阴极和多个阳极,并且其中所述细长的提取狭缝与离子注入机直接连通,其中所述阴极 发射通过它们之间的电位差吸引到多个阳极的电子,其中电子通过细长的提取狭缝释放,作为用于中和在离子注入机内行进的带状离子束的电子带。

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