公开(公告)号：US20060211253A1

公开(公告)日：2006-09-21

申请号：US11081439

申请日：2005-03-16

Applicant: Ing-shin Chen ,  Jeffrey Neuner

Inventor： Ing-shin Chen ,  Jeffrey Neuner

IPC: H01L21/302 ,  G01L21/30 ,  C23F1/00

CPC classification number: B81C1/00587 ,  B81C99/0065 ,  B81C2201/0138 ,  C23C16/4405 ,  G01N27/16 ,  H01J37/32935

Abstract: The present invention relates to a method and system of using downstream sensor elements for determining the plasma conditions (e.g., plasma etching end point) in a semiconductor etching facility that utilizes halogen-containing plasma and/or oxygen-containing plasma. Such sensor elements are capable of exhibiting temperature change in the presence of energetic gas species, e.g., fluorine, chlorine, iodine, bromine, oxygen, and derivatives and radicals thereof that are generated by the plasma, and correspondingly generating an output signal indicative of such temperature change for determination of the plasma conditions in the etching plasma processing facility.

Abstract translation: 本发明涉及使用下游传感器元件来确定半导体蚀刻设备中利用含卤素等离子体和/或含氧等离子体的等离子体条件（例如，等离子体蚀刻终点）的方法和系统。 这样的传感器元件能够在由等离子体产生的能量气体物质例如氟，氯，碘，溴，氧及其衍生物和自由基的存在下表现出温度变化，并且相应地产生指示其的输出信号 用于确定蚀刻等离子体处理设备中的等离子体条件的温度变化。

公开(公告)号：US20040069747A1

公开(公告)日：2004-04-15

申请号：US10269149

申请日：2002-10-11

Applicant: REFLECTIVITY, INC., a California corporation

Inventor： Satyadev R. Patel ,  Gregory P. Schaadt ,  Douglas B. MacDonald ,  Niles K. MacDonald ,  Hongqin Shi

IPC: G01L021/30 ,  G01R031/00

CPC classification number: H01J37/32963 ,  B81C1/00476 ,  B81C1/00587 ,  B81C99/0065 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01J37/32449 ,  H01J37/32935

Abstract: Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber

Abstract translation: 通过与制造微结构中的工艺气体接触从工件材料去除层或区域的工艺通过精确地确定去除步骤的终点的能力增强。 气相蚀刻剂用于去除已经沉积在基底上的材料，其上具有或不具有其它沉积结构。 通过在蚀刻室（或其下游）的出口处产生阻抗，当气相蚀刻剂从蚀刻室通过时，监测蚀刻反应的气态产物，并且可以确定去除过程的终点。 气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室

公开(公告)号：US06652710B2

公开(公告)日：2003-11-25

申请号：US09322912

申请日：1999-06-01

Applicant: James P. Cruse

Inventor： James P. Cruse

IPC: H01L2166

CPC classification number: B24B37/013 ,  B81C1/00587 ,  B81C99/0065 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01J37/32963 ,  H01L22/20 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An apparatus capable of processing a wafer, comprises a chamber adapted to process the wafer, whereby one or more parameters of the process being conducted in the chamber may change during processing of the wafer; and a signal analyzer adapted to receive a plurality of input signals relating to the parameters and provide an output signal in relation to the input signals.

Abstract translation: 能够处理晶片的装置包括适于处理晶片的室，由此在晶片的处理过程中在室内进行的工艺的一个或多个参数可能改变; 以及信号分析器，适于接收与参数相关的多个输入信号，并提供与输入信号相关的输出信号。

公开(公告)号：US20030073302A1

公开(公告)日：2003-04-17

申请号：US10270465

申请日：2002-10-11

Applicant: REFLECTIVITY, INC., a California corporation

Inventor： Andrew G. Huibers

IPC: H01L021/4763

CPC classification number: B81C1/00801 ,  B81C1/00095 ,  B81C1/00476 ,  B81C99/0065 ,  B81C2201/0138 ,  B81C2201/117 ,  H01L21/7682

Abstract: Processes are disclosed for forming integrated circuit devices where multilayered structures are formed having between layers a removable silicon material. The layers adjacent the removable silicon can be either conducting or insulating or both. After forming one or more layers with the removable silicon therebetween, the silicon is removed so as to provide for an air-gap dielectric. In one embodiment, adjacent layers are copper. Between the copper and removable silicon can be a barrier layer, such as a transition metal-silicon-nitride layer. In a preferred embodiment, the removable silicon is removed with a gas phase interhalogen or noble gas halide.

Abstract translation: 公开了用于形成集成电路器件的工艺，其中多层结构在层之间形成可移除的硅材料。 与可去除的硅相邻的层可以是导电的或绝缘的，也可以是两者。 在其间具有可去除的硅形成一个或多个层之后，去除硅以提供气隙电介质。 在一个实施例中，相邻层是铜。 在铜和可移除的硅之间可以是阻挡层，例如过渡金属 - 氮化硅层。 在优选的实施方案中，用气相卤间或惰性气体卤化物除去可除去的硅。

公开(公告)号：US5910011A

公开(公告)日：1999-06-08

申请号：US854508

申请日：1997-05-12

Applicant: James P. Cruse

Inventor： James P. Cruse

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/66 ,  G01R31/26

CPC classification number: B24B37/013 ,  B81C1/00587 ,  B81C99/0065 ,  H01J37/32963 ,  H01L22/20 ,  H01L22/26 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01L2924/0002

Abstract: A method and apparatus that provides process monitoring within a semiconductor wafer processing system using multiple process parameters. Specifically, the apparatus analyzes multiple process parameters and statistically correlates these parameters to detect a change in process characteristics such that the endpoint of an etch process may be accurately detected, as well as detecting other characteristics within the chamber. The multiple parameters may include optical emissia, environmental parameters such as pressure and temperature within the reaction chamber, RF power parameters such as reflected power or tuning voltage, and system parameters such as particular system configurations and control voltages.

Abstract translation: 一种使用多个工艺参数在半导体晶片处理系统内提供过程监控的方法和装置。 具体地，该装置分析多个工艺参数并统计地将这些参数相关联以检测工艺特性的变化，使得可以精确地检测蚀刻工艺的端点，以及检测室内的其它特性。 多个参数可以包括光学辐射，环境参数，例如反应室内的压力和温度，RF功率参数，例如反射功率或调谐电压，以及诸如特定系统配置和控制电压的系统参数。

公开(公告)号：US20180247798A1

公开(公告)日：2018-08-30

申请号：US15967541

申请日：2018-04-30

Applicant: Lam Research Corporation

Inventor： Joydeep Guha ,  John Daugherty ,  Vahid Vahedi ,  Richard Alan Gottscho

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/32935 ,  B81C2201/0138 ,  H01J37/32082 ,  H01J37/32926 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67242 ,  H01L21/67248 ,  H01L21/67253

Abstract: A system for controlling processing state of a plasma process is provided. One example system includes a plasma reactor having a plurality of tuning knobs for making settings to operational conditions of the plasma reactor. A plurality of sensors of the plasma reactor is included, where each of the plurality of sensors is configured to produce a data stream of information during operation of the plasma reactor for carrying out the plasma process. A controller of the plasma reactor is configured to execute a multivariate processing that is configured to use as input desired processing state values that define intended measurable conditions within a processing environment of the plasma reactor and identify current plasma processing values. The multivariate processing uses a machine learning engine that receives as inputs the desired processing state values and data streams from the plurality of sensors during processing of the plasma process. The machine learning engine is configured to identify current processing state values used to produce a compensation vector, such that the compensation vector defines differences between the desired process state values and the current processing state values. The controller is further configured to execute a compensation processing operation that transforms the compensation vector expressed in terms of measured conditions within the processing environment to changes of specific one or more of the tuning knobs of the plasma reactor.

公开(公告)号：US09972478B2

公开(公告)日：2018-05-15

申请号：US15268472

申请日：2016-09-16

Applicant: Lam Research Corporation

Inventor： Joydeep Guha ,  John Daugherty ,  Vahid Vahedi ,  Richard Alan Gottscho

IPC: G01L21/30 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/32935 ,  B81C2201/0138 ,  H01J37/32082 ,  H01J37/32926 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67242 ,  H01L21/67248 ,  H01L21/67253

Abstract: Methods and systems for controlling processing state of a plasma reactor to initiate processing of production substrates and/or to determine a ready state of a reactor after the reactor has been cleaned and needs to be seasoned for subsequent production wafer processing are provided. The method initiate processing of a substrate in the plasma reactor using settings for tuning knobs of the plasma reactor that are approximated to achieve desired processing state values. A plurality of data streams are received from the plasma reactor during the processing of the substrate. The plurality of data streams are used to identify current processing state values. The method includes generating a compensation vector that identifies differences between the current processing state values and the desired processing state values. The generation of the compensation vector uses machine learning to improve and refile the identification and amount of compensation needed, as identified in the compensation vector. The method further includes transforming the compensation vector into adjustments to the settings for the tuning knobs and then applying the adjustment to the tuning knobs of the plasma reactor.

公开(公告)号：US09771261B1

公开(公告)日：2017-09-26

申请号：US15072852

申请日：2016-03-17

Applicant: Texas Instruments Incorporated

Inventor： Lee Alan Stringer ,  Mona Eissa ,  Byron J. R. Shulver ,  Sopa Chevacharoenkul ,  Mark R. Kimmich ,  Sudtida Lavangkul ,  Mark L. Jenson

IPC: G01R33/04 ,  B81C1/00 ,  G01R33/00

CPC classification number: B81C1/00825 ,  B81C1/00365 ,  B81C2201/0138 ,  B81C2201/014 ,  G01R33/0047 ,  G01R33/0052 ,  G01R33/04

Abstract: A method comprises forming an etch stop layer, a first titanium layer, a magnetic core, a second titanium layer, and patterning the first and second titanium layers. The etch stop layer is formed above a substrate. The first titanium layer is formed on the etch stop layer. The magnetic core is formed on the first titanium layer. The second titanium layer has a first portion encapsulating the magnetic core with the first titanium layer, and a second portion interfacing with the first titanium layer beyond the magnetic core. The patterning of the first and second titanium layers includes forming a mask over a magnetic core region and etching the first and second titanium layers exposed by the mask using a titanium etchant and a titanium oxide etchant.

公开(公告)号：US20160378064A1

公开(公告)日：2016-12-29

申请号：US15171012

申请日：2016-06-02

Applicant: Nivarox-FAR S.A.

Inventor： Alex GANDELHMAN

IPC: G04D99/00 ,  C23F1/00

CPC classification number: G04D99/00 ,  B81B2201/035 ,  B81B2203/0384 ,  B81C1/00103 ,  B81C2201/0132 ,  B81C2201/0138 ,  B81C2201/014 ,  C23F1/00

Abstract: The invention relates to a silicon-based component with at least one chamfer formed from a method combining at least one oblique side wall etching step with a “Bosch” etching of vertical side walls, thereby enabling aesthetic improvement and improvement in the mechanical strength of components formed by micromachining a silicon-based wafer.

Abstract translation: 本发明涉及一种具有至少一个倒角的硅基组件，该方法将至少一个倾斜侧壁蚀刻步骤与垂直侧壁的“博世”蚀刻相结合，从而使得美观改进和组件的机械强度得到改善 通过微加工硅基晶片形成。

公开(公告)号：US20150200116A1

公开(公告)日：2015-07-16

申请号：US14466391

申请日：2014-08-22

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hiroaki YAMADA ,  Yoshihiro OGAWA ,  Takeshi HIZAWA

IPC: H01L21/67

CPC classification number: H01L21/67086 ,  B08B3/14 ,  B81C2201/0138 ,  C23F1/26 ,  H01L21/31111 ,  H01L22/10 ,  Y10T137/0318

Abstract: A chemical liquid treatment apparatus includes processing chambers; a chemical liquid feeding unit configured to cyclically feed a chemical liquid into the processing chambers; and a modifying unit. The modifying unit, when using a chemical liquid in which an effect thereof varies with a chemical liquid discharge time, is configured to calculate a variation of the effect of the chemical liquid based on the chemical liquid discharge time and is configured to modify the chemical liquid discharge time for each of the processing chambers based on the calculated variation of the effect of the chemical liquid and a cumulative time of the chemical liquid discharge time.

Abstract translation: 药液处理装置包括处理室; 化学液体供给单元，其构造成将化学液体循环进料到所述处理室中; 和修改单元。 修改单元当使用其效果随化学液体排出时间而变化的化学液体被配置为基于化学液体排出时间计算化学液体的影响的变化，并且被配置为改变化学液体 基于计算出的化学液体的影响的变化和化学液体排放时间的累积时间，每个处理室的排出时间。