公开(公告)号：US5663608A

公开(公告)日：1997-09-02

申请号：US633545

申请日：1996-04-17

Applicant: Gary W. Jones ,  Steven M. Zimmerman

Inventor： Gary W. Jones ,  Steven M. Zimmerman

IPC: G01R33/10 ,  G02B27/00 ,  G02B27/01 ,  G02B27/22 ,  G09G3/00 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J9/24 ,  H01J29/02 ,  H01J29/94 ,  H01J31/12 ,  H04N5/70 ,  H04N5/74 ,  H04N13/00 ,  H01J1/02

CPC classification number: G09G3/001 ,  G01R33/10 ,  G02B27/017 ,  G02B27/0172 ,  G02B27/0176 ,  G02B27/2235 ,  H01J1/3042 ,  H01J29/028 ,  H01J29/94 ,  H01J3/022 ,  H01J31/127 ,  H01J9/025 ,  H04N13/0422 ,  H04N13/0438 ,  H04N13/044 ,  H04N13/0459 ,  H04N13/0497 ,  H04N5/7408 ,  G02B2027/0132 ,  G02B2027/0136 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2209/385 ,  H01J2329/00 ,  H01J2329/8625 ,  H01J2329/863 ,  H01J2329/864 ,  H04N13/0059 ,  H04N13/0285 ,  H04N13/0427 ,  H04N13/0456 ,  H04N5/70 ,  H04N5/7491

Abstract: A field emitter structure, comprising: a base substrate; a field emitter element on the base substrate; a multilayer differentially etched dielectric stack circumscribingly surrounding the field emitter element on the base substrate; and a gate electrode overlying the multilayer differentially etched dielectric stack, and in circumscribing spaced relationship to the field emitter element. Also disclosed are electron source devices, comprising an electron emitter element including a material selected from the group consisting of leaky dielectric materials, and leaky insulator materials, as well as electron source devices, comprising an electron emitter element including an insulator material doped with a tunneling electron emission enhancingly effective amount of a dopant species, and thin film triode devices.

Abstract translation: 一种场发射器结构，包括：基底; 基底基板上的场发射体元件; 围绕基底衬底上的场发射体元件的多层差分蚀刻介质堆叠; 以及覆盖多层差分蚀刻的电介质叠层的栅电极，并且以与外界发射极元件间隔开的关系。 还公开了电子源器件，其包括电子发射器元件，其包括选自由漏电介质材料和漏绝缘体材料组成的组的材料，以及电子源器件，其包括电子发射器元件，该电子发射器元件包括掺杂有隧道 电子发射增加有效量的掺杂物种类和薄膜三极管器件。

公开(公告)号：US5619097A

公开(公告)日：1997-04-08

申请号：US461498

申请日：1995-06-05

Applicant: Gary W. Jones

Inventor： Gary W. Jones

IPC: G02B27/22 ,  G09G3/00 ,  H01J1/304 ,  H01J3/02 ,  H01J7/18 ,  H01J9/02 ,  H01J9/24 ,  H01J29/02 ,  H01J29/82 ,  H01J29/87 ,  H01J29/94 ,  H01J31/12 ,  H04N5/70 ,  H04N5/74 ,  H01J63/04

CPC classification number: H01J31/127 ,  G02B27/2235 ,  G09G3/001 ,  H01J29/028 ,  H01J29/82 ,  H01J29/94 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2209/385 ,  H01J2329/8625 ,  H01J2329/864 ,  H01J2329/8645 ,  H04N5/70 ,  H04N5/7491

Abstract: A vertical field emitter structure and field emission device such as a flat panel display utilizing such structure. Self-aligned gate and emitter fabrication is described, together with virtual column field emitter structures, comprising an emitter or gated emitter with conductive columns connecting the emitter to an underlying resistor or conductor structure formed by chemical or other modification of portions of an underlying layer. The display of the invention utilizes field emission structures with low turn-voltages and high accelerating voltages, thereby permitting high brightness, small pixel size, low manufacturing costs, uniform brightness, and high energy efficiency to be achieved.

Abstract translation: 垂直场致发射体结构和场致发射器件，例如利用这种结构的平板显示器。 描述了自对准栅极和发射极制造以及虚拟列场发射器结构，其包括发射极或门控发射极，导电柱将发射极连接到通过下层的部分的化学或其它修饰而形成的下伏电阻或导体结构。 本发明的显示器利用具有低匝数和高加速电压的场发射结构，从而可以实现高亮度，小像素尺寸，低制造成本，均匀亮度和高能量效率。

公开(公告)号：US5587623A

公开(公告)日：1996-12-24

申请号：US627922

申请日：1996-04-03

Applicant: Gary W. Jones

Inventor： Gary W. Jones

IPC: G02B27/22 ,  G09G3/00 ,  H01J1/304 ,  H01J3/02 ,  H01J7/18 ,  H01J9/02 ,  H01J9/24 ,  H01J29/02 ,  H01J29/82 ,  H01J29/87 ,  H01J29/94 ,  H01J31/12 ,  H04N5/70 ,  H04N5/74 ,  H01J19/24

CPC classification number: H01J31/127 ,  G02B27/2235 ,  G09G3/001 ,  H01J29/028 ,  H01J29/82 ,  H01J29/94 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2209/385 ,  H01J2329/8625 ,  H01J2329/864 ,  H01J2329/8645 ,  H04N5/70 ,  H04N5/7491

Abstract: A vertical field emitter structure and field emission device such as a flat panel display utilizing such structure. Self-aligned gate and emitter fabrication is described, together with virtual column field emitter structures, comprising an emitter or gated emitter with conductive columns connecting the emitter to an underlying resistor or conductor structure formed by chemical or other modification of portions of an underlying layer. The display of the invention utilizes field emission structures with low turn-voltages and high accelerating voltages, thereby permitting high brightness, small pixel size, low manufacturing costs, uniform brightness, and high energy efficiency to be achieved.

Abstract translation: 垂直场致发射体结构和场致发射器件，例如利用这种结构的平板显示器。 描述了自对准栅极和发射极制造以及虚拟列场发射器结构，其包括发射极或门控发射极，导电柱将发射极连接到通过下层的部分的化学或其它修饰而形成的下伏电阻或导体结构。 本发明的显示器利用具有低匝数和高加速电压的场发射结构，从而可以实现高亮度，小像素尺寸，低制造成本，均匀亮度和高能量效率。

公开(公告)号：US5551903A

公开(公告)日：1996-09-03

申请号：US326302

申请日：1994-10-19

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: G09G3/22 ,  H01J1/304 ,  H01J1/316 ,  H01J9/02 ,  H01J29/08 ,  H01J31/12 ,  H01J61/067 ,  H01J63/06 ,  H01J1/30

CPC classification number: H01J1/316 ,  G09G3/22 ,  H01J1/304 ,  H01J1/3042 ,  H01J29/085 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/06 ,  H01J9/027 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/8625 ,  H01J2329/864 ,  Y10S977/891

Abstract: A field emission cathode is provided which includes a substrate and a conductive layer disposed adjacent the substrate. An electrically resistive pillar is disposed adjacent the conductive layer, the resistive pillar having a substantially flat surface spaced from and substantially parallel to the substrate. A layer of diamond is disposed adjacent the flat surface of the resistive pillar.

Abstract translation: 提供场发射阴极，其包括衬底和邻近衬底设置的导电层。 电阻柱设置在导电层附近，电阻柱具有与衬底间隔开并基本上平行于衬底的基本平坦的表面。 在电阻柱的平坦表面附近设置一层金刚石。

公开(公告)号：US5345141A

公开(公告)日：1994-09-06

申请号：US45407

申请日：1993-03-29

Applicant: Curtis D. Moyer ,  John Song ,  James E. Jaskie

Inventor： Curtis D. Moyer ,  John Song ,  James E. Jaskie

IPC: H01J9/02 ,  H01J1/304 ,  H01J9/14 ,  H01J9/22 ,  H01J29/04 ,  H01J29/18 ,  H01J31/12 ,  H01J1/62

CPC classification number: H01J1/3042 ,  H01J31/127 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319

Abstract: A single substrate, vacuum fluorescent display including a first layer of electrically conductive material positioned on a supporting substrate and a light emitting layer including phosphor positioned on the first layer. A second layer of electrically conductive material is supported on the substrate and electrically insulated from the first layer. An electron emitting layer of low work function material is positioned on the second layer and further positioned so that emitted electrons strike the light emitting layer. Since both the electron emitting and the light emitting layers are supported on the substrate, an encapsulating window is simple and easy to construct. Integrated drivers are optionally formed in the supporting substrate.

Abstract translation: 单个基板，真空荧光显示器，其包括位于支撑基板上的第一导电材料层和包含位于第一层上的荧光体的发光层。 第二层导电材料被支撑在基底上并与第一层电绝缘。 低功函数材料的电子发射层位于第二层上，并进一步定位成使得发射的电子撞击发光层。 由于电子发射层和发光层都被支撑在基板上，所以封装窗口简单易于构造。 集成驱动器可选地形成在支撑基板中。

公开(公告)号：US5228878A

公开(公告)日：1993-07-20

申请号：US755938

申请日：1991-11-13

Applicant: Hiroshi Komatsu

Inventor： Hiroshi Komatsu

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02

CPC classification number: H01J3/022 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2209/0226 ,  H01L2223/54473

Abstract: A field emission device and method for manufacturing which comprises using a diffusion mask to preserve an area of a silicon substrate for use as a cathode while all around the cathode the substrate is being diffused with oxygen to form an insulating layer. And further comprising depositing a molybdenum gate electrode layer on the insulating layer and etching the molybdenum gate electrode layer such that the diffusion mask falls off and the insulating layer is dissolved around the cathode through the hole formed in the gate electrode layer by the diffusion mask being removed. The gate electrode openings are therefore automatically and independently self-aligned with their respective cathodes.

Abstract translation: 一种场致发射器件及其制造方法，其包括使用扩散掩模来保留用于阴极的硅衬底的面积，同时所述衬底周围的所述衬底全部被氧扩散以形成绝缘层。 并且还包括在所述绝缘层上沉积钼栅极层并蚀刻所述钼栅极层，使得所述扩散掩模脱落，并且所述绝缘层通过所述扩散掩模通过形成在所述栅电极层中的所述孔溶解在所述阴极周围 删除。 因此，栅电极开口自动且独立地与它们各自的阴极自对准。

公开(公告)号：US11848169B1

公开(公告)日：2023-12-19

申请号：US18157817

申请日：2023-01-21

Applicant: Dazhi Chen ,  Zhongwei Chen

Inventor： Dazhi Chen ,  Zhongwei Chen

IPC: H01J1/304

CPC classification number: H01J1/3044 ,  H01J2201/30415 ,  H01J2201/30426 ,  H01J2201/30496

Abstract: A field-emission type electron source includes (i) a single-crystal tungsten rod having a sharpened terminus and (ii) a mass of ZrO formed only on a portion of the surface, or the entire surface, of the sharpened terminus. In preferred design, the single-crystal tungsten rod is placed in a gaseous medium that consists of oxygen and a non-oxygen gas. The molar ratio between oxygen and the non-oxygen gas is greater than 1:1.

公开(公告)号：US09048057B2

公开(公告)日：2015-06-02

申请号：US13823506

申请日：2011-09-16

Applicant: Marc Monthioux ,  Florent Houdellier

Inventor： Marc Monthioux ,  Florent Houdellier

IPC: H01J29/48 ,  H01J1/304 ,  H01J3/02 ,  H01J37/073 ,  H01J37/28 ,  H01J9/02 ,  B82Y20/00

CPC classification number: H01J29/485 ,  B82Y20/00 ,  H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J37/073 ,  H01J37/28 ,  H01J2201/30411 ,  H01J2201/30415 ,  H01J2201/30426 ,  H01J2201/30434 ,  H01J2201/30469 ,  H01J2237/06316 ,  H01J2237/06341 ,  H01J2237/26

Abstract: A field-emission electron gun including an electron emission tip, an extractor anode, and a mechanism creating an electric-potential difference between the emission tip and the extractor anode. The emission tip includes a metal tip and an end cone produced by chemical vapor deposition on a nanofilament, the cone being aligned and welded onto the metal tip. The electron gun can be used for a transmission electron microscope.

Abstract translation: 包括电子发射尖端，提取器阳极和在发射尖端和提取器阳极之间产生电位差的机制的场致发射电子枪。 发射尖端包括通过化学气相沉积在纳米丝上产生的金属尖端和端锥，锥体对准并焊接到金属尖端上。 电子枪可用于透射电子显微镜。

公开(公告)号：US20130234025A1

公开(公告)日：2013-09-12

申请号：US13823506

申请日：2011-09-16

Applicant: Marc Monthioux ,  Florent Houdellier

Inventor： Marc Monthioux ,  Florent Houdellier

IPC: H01J29/48 ,  H01J9/02

CPC classification number: H01J29/485 ,  B82Y20/00 ,  H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J37/073 ,  H01J37/28 ,  H01J2201/30411 ,  H01J2201/30415 ,  H01J2201/30426 ,  H01J2201/30434 ,  H01J2201/30469 ,  H01J2237/06316 ,  H01J2237/06341 ,  H01J2237/26

Abstract: A field-emission electron gun including an electron emission tip, an extractor anode, and a mechanism creating an electric-potential difference between the emission tip and the extractor anode. The emission tip includes a metal tip and an end cone produced by chemical vapor deposition on a nanofilament, the cone being aligned and welded onto the metal tip. The electron gun can be used for a transmission electron microscope.

Abstract translation: 包括电子发射尖端，提取器阳极和在发射尖端和提取器阳极之间产生电位差的机制的场致发射电子枪。 发射尖端包括通过化学气相沉积在纳米丝上产生的金属尖端和端锥，锥体对准并焊接到金属尖端上。 电子枪可用于透射电子显微镜。

公开(公告)号：US20090033196A1

公开(公告)日：2009-02-05

申请号：US12154035

申请日：2008-05-19

Applicant: Young-Mi Cho ,  Chang-Wook Kim ,  Hee-Sung Moon

Inventor： Young-Mi Cho ,  Chang-Wook Kim ,  Hee-Sung Moon

IPC: H01J1/02

CPC classification number: H01J1/304 ,  H01J3/021 ,  H01J2201/30426 ,  H01J2201/30453

Abstract: Electron emission sources, electron emission devices including the electron emission sources, and methods of making the electron emission sources are provided. The electron emission source includes a carbon-based material, and a degradation prevention material for preventing degradation of the carbon-based material. A binding energy between the degradation prevention material and external oxygen is greater than a binding energy between the carbon-based material and the external oxygen. The electron emission sources have excellent field emission efficiencies and long lifetimes.

Abstract translation: 提供电子发射源，包括电子发射源的电子发射装置，以及制造电子发射源的方法。 电子发射源包括碳基材料和用于防止碳基材料劣化的防分解材料。 降解防止材料和外部氧之间的结合能大于碳基材料和外部氧之间的结合能。 电子发射源具有优异的场发射效率和长寿命。