公开(公告)号：US09263223B2

公开(公告)日：2016-02-16

申请号：US13870166

申请日：2013-04-25

Applicant: Bruker Daltonik GmbH

Inventor： Michael Duerr ,  Christoph Gebhardt

IPC: H01J7/24 ,  H05B31/26 ,  H01J27/02 ,  H01J49/04 ,  H01J49/14

CPC classification number: H01J27/026 ,  H01J49/0481 ,  H01J49/142

Abstract: The invention relates to devices and methods in mass spectrometers for the generation of ions of heavy molecules, especially biomolecules, by bombarding them with uncharged clusters of molecules. The analyte ions which are generated or released by cluster bombardment of analyte substances on the surface of sample support plates show a broad distribution of their kinetic energies, which prevents good ion-optical focusing. In the invention, the kinetic energies are homogenized in a higher-density collision gas. The collision gas is preferably located in an RF ion guide, more preferably an RF ion funnel, which can transfer the ions to the mass analyzer. The collision gas may be introduced with temporal pulsing, coordinated or synchronized with the pulsed supersonic gas jet. The collision gas may be pumped off again before the next supersonic gas pulse. In an advantageous embodiment, the collision gas can originate from the supersonic gas jet itself.

Abstract translation: 本发明涉及用于通过用不带电荷的分子团轰击它们来产生重分子，特别是生物分子的离子的质谱仪中的装置和方法。 通过在样品支撑板表面上的分析物质的聚集轰击产生或释放的分析物离子显示出其动能的广泛分布，这阻止了良好的离子光学聚焦。 在本发明中，动能在较高密度的碰撞气体中均质化。 碰撞气体优选位于RF离子导向件中，更优选地位于可以将离子转移到质量分析器的RF离子漏斗中。 碰撞气体可以与脉冲超音速气体射流一起引入时间脉冲，协调或同步。 碰撞气体可能在下一个超音速气体脉冲之前被再次泵出。 在有利的实施例中，碰撞气体可以源于超音速气体射流本身。

公开(公告)号：US09147568B2

公开(公告)日：2015-09-29

申请号：US14265766

申请日：2014-04-30

Applicant: Ionoptika Limited

Inventor： Paul William Miles Blenkinsopp ,  Andrew Mark Barber

IPC: H01J49/26 ,  H01J49/02 ,  H01J49/14 ,  H01J27/02 ,  H01J49/00

CPC classification number: H01J49/142 ,  H01J27/026 ,  H01J49/0031

Abstract: A mass spectrometer for producing a primary beam of ions for bombarding a sample under vacuum. The mass spectrometer includes a detector for detecting a secondary beam of ions released from the sample. The primary beam of ions includes water clusters where each water cluster contains between 1 and 10,000 water molecules. The primary beam of ions, in one embodiment, is produced by adiabatic expansion of water vapor. An auxiliary beam of ions for bombarding the sample includes a different species to those of the primary beam of ions.

Abstract translation: 用于产生用于在真空下轰击样品的一次离子束的质谱仪。 质谱仪包括用于检测从样品释放的次级次级束的检测器。 主要离子束包括水簇，其中每个水簇含有1至10,000个水分子。 在一个实施方案中，主要离子束是通过水汽的绝热膨胀产生的。 用于轰击样品的辅助离子束包括与主离子束不同的物质。

公开(公告)号：US20140295107A2

公开(公告)日：2014-10-02

申请号：US14136329

申请日：2013-12-20

Applicant: Akinobu SATO ,  Akiko SUZUKI ,  Emmanuel BOURELLE ,  Jiro MATSUO ,  Toshio SEKI

Inventor： Akinobu SATO ,  Akiko SUZUKI ,  Emmanuel BOURELLE ,  Jiro MATSUO ,  Toshio SEKI

IPC: H01J37/317

CPC classification number: C23F4/00 ,  H01J27/026 ,  H01J37/20 ,  H01J37/3053 ,  H01J37/317 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01L21/3065

Abstract: A scratch or similar surface roughness in a solid surface is reduced by gas cluster ion beam irradiation. A gas-cluster-ion-beam solid surface smoothing method includes an irradiation step in which the solid surface is irradiated with a gas cluster ion beam. The irradiation step includes a process of causing clusters from a plurality of directions to collide with at least an area (spot) irradiated with the gas cluster ion beam in the solid surface. Collision of clusters from a plurality of directions with the spot can be brought about by emitting a divergent gas cluster ion beam which releases clusters in diverging directions with respect to the beam center, for example.

Abstract translation: 通过气体簇离子束照射，固体表面的划痕或类似表面粗糙度降低。 气体 - 团簇 - 离子束固体表面平滑化方法包括其中固体表面被气体团簇离子束照射的照射步骤。 照射步骤包括使来自多个方向的簇的至少一部分与固体表面中的气体簇离子束照射的区域（点）发生碰撞的处理。 可以通过发射例如相对于光束中心发散发散簇的发散气体簇离子束来产生具有点的多个方向的簇的碰撞。

公开(公告)号：US20140236286A1

公开(公告)日：2014-08-21

申请号：US14238271

申请日：2012-08-17

Applicant: Sean R. Kirkpatrick ,  Richard C. Svrluga

Inventor： Sean R. Kirkpatrick ,  Richard C. Svrluga

IPC: A61F2/82 ,  A61L31/16

CPC classification number: A61F2/82 ,  A61F2210/0076 ,  A61F2240/001 ,  A61F2250/0068 ,  A61L31/16 ,  A61L2300/602 ,  A61L2300/61 ,  A61L2400/18 ,  A61L2420/02 ,  A61L2420/08 ,  H01J27/026

Abstract: A medical device for surgical implantation adapted to serve as a drug delivery system has one or more drug loaded holes with barrier layers to control release or elution of the drug from the holes or to control inward diffusion of fluids into the holes. The barrier layers are non-polymers and are formed from the drug material itself by beam processing. The holes may be in patterns to spatially control drug delivery. Flexible options permit combinations of drugs, variable drug dose per hole, multiple drugs per hole, temporal control of drug release sequence and profile. Methods for forming such a drug delivery system are also disclosed. Gas cluster ion beam and/or accelerated Neutral Beam derived from an accelerated gas cluster ion beam may be employed.

Abstract translation: 适于用作药物递送系统的用于手术植入物的医疗装置具有一个或多个具有阻挡层的药物负载孔，以控制药物从孔中的释放或洗脱，或者控制流体向孔中的向内扩散。 阻挡层是非聚合物，并且由药物材料本身通过束加工形成。 孔可以是空间控制药物递送的图案。 灵活的选择允许药物组合，每孔可变药物剂量，每孔多种药物，药物释放顺序和形态的时间控制。 还公开了形成这种药物递送系统的方法。 可以采用来自加速气体团簇离子束的气体团簇离子束和/或加速中性束。

公开(公告)号：US08338806B2

公开(公告)日：2012-12-25

申请号：US12774051

申请日：2010-05-05

Applicant: Michael Graf ,  Robert K. Becker ,  Christopher T. Reddy ,  Noel Russell

Inventor： Michael Graf ,  Robert K. Becker ,  Christopher T. Reddy ,  Noel Russell

IPC: A61N5/00

CPC classification number: H01J37/08 ,  H01J27/026 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0812

Abstract: A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a nozzle for forming and emitting gas cluster beams through a nozzle outlet, and a stagnation chamber that is located upstream of and adjacent the nozzle. The stagnation chamber has an inlet, and the nozzle is configured to direct a single gas cluster beam toward the substrate. An ionizer is positioned downstream of the outlet and is configured to ionize the gas cluster beam to form the GCIB. The system also includes a gas supply that is in fluid communication with the inlet of the stagnation chamber, and which includes a gas source and a valve located between the gas source and the nozzle for controlling flow of a gas between the gas source and the nozzle.

Abstract translation: 提供了用气体簇离子束（GCIB）照射衬底的处理系统。 该系统包括用于通过喷嘴出口形成和发射气体束的喷嘴，以及位于喷嘴的上游和邻近喷嘴的停滞室。 停滞室具有入口，并且喷嘴构造成将单个气体束束引向基板。 离子发生器位于出口的下游，并被配置为电离气体簇束以形成GCIB。 该系统还包括与停滞室的入口流体连通的气体源，其包括气体源和位于气体源和喷嘴之间的阀，用于控制气体源和喷嘴之间的气体流动 。

公开(公告)号：US20110272594A1

公开(公告)日：2011-11-10

申请号：US12774051

申请日：2010-05-05

Applicant: Michael Graf ,  Robert K. Becker ,  Christopher T. Reddy ,  Noel Russell

Inventor： Michael Graf ,  Robert K. Becker ,  Christopher T. Reddy ,  Noel Russell

IPC: H01J37/30 ,  H01J37/02

CPC classification number: H01J37/08 ,  H01J27/026 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0812

Abstract: A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a nozzle for forming and emitting gas cluster beams through a nozzle outlet, and a stagnation chamber that is located upstream of and adjacent the nozzle. The stagnation chamber has an inlet, and the nozzle is configured to direct a single gas cluster beam toward the substrate. An ionizer is positioned downstream of the outlet and is configured to ionize the gas cluster beam to form the GCIB. The system also includes a gas supply that is in fluid communication with the inlet of the stagnation chamber, and which includes a gas source and a valve located between the gas source and the nozzle for controlling flow of a gas between the gas source and the nozzle.

Abstract translation: 提供了用气体簇离子束（GCIB）照射衬底的处理系统。 该系统包括用于通过喷嘴出口形成和发射气体束的喷嘴，以及位于喷嘴的上游和邻近喷嘴的停滞室。 停滞室具有入口，并且喷嘴构造成将单个气体束束引向基板。 离子发生器位于出口的下游，并被配置为电离气体簇束以形成GCIB。 该系统还包括与停滞室的入口流体连通的气体源，其包括气体源和位于气体源和喷嘴之间的阀，用于控制气体源和喷嘴之间的气体流动 。

公开(公告)号：US07982196B2

公开(公告)日：2011-07-19

申请号：US12415755

申请日：2009-03-31

Applicant: John J. Hautala ,  Nathan E. Baxter

Inventor： John J. Hautala ,  Nathan E. Baxter

IPC: H01J37/317

CPC classification number: H01J37/317 ,  H01J27/026 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/3178 ,  H01J2237/0812 ,  H01J2237/316 ,  H01J2237/3165 ,  H01J2237/31701 ,  H01J2237/31732

Abstract: A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0.25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB.

Abstract translation: 描述了改变衬底上的材料层的方法。 该方法包括在基底上形成材料层。 此后，该方法包括建立具有每原子约0.25eV至约100eV /原子比的每原子比能量的气体簇离子束（GCIB），以及通过将材料层暴露于GCIB来修饰该材料层。

公开(公告)号：US07834554B2

公开(公告)日：2010-11-16

申请号：US11940136

申请日：2007-11-14

Applicant: Thomas N. Horsky

Inventor： Thomas N. Horsky

IPC: H01J7/24

CPC classification number: C23C14/48 ,  H01J27/026 ,  H01J27/08 ,  H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/0827 ,  H01J2237/31701 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: An ion source is disclosed for providing a range of ion beams consisting of either ionized clusters, such as B2Hx+, B5Hx+, B18Hx+, B18Hx+, P4+ or As4+, or monomer ions, such as Ge+, In+, Sb+, B+, As+, and P+, to enable cluster implants and monomer implants into silicon substrates for the purpose of manufacturing CMOS devices, and to do so with high productivity. The range of ion beams is generated by a universal ion source in accordance with the present invention which is configured to operate in two discrete modes: an electron impact mode, which efficiently produces ionized clusters, and an arc discharge mode, which efficiently produces monomer ions.

Abstract translation: 公开了一种离子源，用于提供由诸如B 2 H x +，B 5 H x +，B 18 H x +，B 18 H x +，P 4 +或As 4+的离子化簇或单体离子（诸如Ge +，In +，Sb +，B +，As +和P + ，以使集群植入物和单体植入物进入硅衬底，以制造CMOS器件，并以高生产率实现。 离子束的范围由根据本发明的通用离子源产生，其被配置为以两种离散模式操作：电子冲击模式，其有效地产生离子簇，以及电弧放电模式，其有效地产生单体离子 。

公开(公告)号：US07670964B2

公开(公告)日：2010-03-02

申请号：US11689572

申请日：2007-03-22

Applicant: Scott Lane

Inventor： Scott Lane

IPC: H01L21/31

CPC classification number: H01J37/3053 ,  H01J27/026 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0812 ,  H01J2237/0825

Abstract: Embodiments of a gas cluster ion beam apparatus and methods for forming a gas cluster ion beam using a low-pressure process source are generally described herein. In one embodiment, the low-pressure process source is mixed with a high-pressure diluent source in a static pump to form a mixed source, from which a gas cluster jet is generated and ionized to form the gas cluster ion beam. Other embodiments may be described and claimed.

Abstract translation: 气体簇离子束装置的实施例和使用低压处理源形成气体簇离子束的方法在本文中一般地被描述。 在一个实施方案中，将低压过程源与静压泵中的高压稀释剂源混合以形成混合源，产生气体簇射流并离子化以形成气体团簇离子束。 可以描述和要求保护其他实施例。

公开(公告)号：US20090166555A1

公开(公告)日：2009-07-02

申请号：US12005757

申请日：2007-12-28

Applicant: Joseph C. Olson ,  Jay T. Scheuer

Inventor： Joseph C. Olson ,  Jay T. Scheuer

IPC: H01J27/00

CPC classification number: H01J27/18 ,  H01J27/026 ,  H01J37/08 ,  H01J37/30 ,  H01J37/31 ,  H01J2237/061 ,  H01J2237/06366 ,  H01J2237/0812 ,  H01J2237/31701

Abstract: The present invention discloses a system and method for generating gas cluster ion beams (GCIB) having very low metallic contaminants. Gas cluster ion beam systems are plagued by high metallic contamination, thereby affecting their utility in many applications. This contamination is caused by the use of thermionic sources, which impart contaminants and are also susceptible to short lifecycles due to their elevated operating temperatures. While earlier modifications have focused on isolating the filament from the source gas cluster as much as possible, the present invention represents a significant advancement by eliminating the thermionic source completely. In the preferred embodiment, an inductively coupled plasma and ionization region replaces the thermionic source and ionizer of the prior art. Through the use of RF or microwave frequency electromagnetic waves, plasma can be created in the absence of a filament, thereby eliminating a major contributor of metallic contaminants.

Abstract translation: 本发明公开了一种具有非常低金属污染物的气体簇离子束（GCIB）的系统和方法。 气体簇离子束系统受到高金属污染的困扰，从而影响其在许多应用中的应用。 这种污染是由使用热离子源引起的，因为它们赋予污染物，并且由于它们升高的工作温度也容易产生短暂的生命周期。 虽然较早的修改集中在尽可能多地将源极气体簇隔离，但本发明通过完全消除热离子源代表了显着的进步。 在优选实施例中，电感耦合等离子体和电离区取代现有技术的热离子源和离子发生器。 通过使用RF或微波频率电磁波，可以在没有灯丝的情况下产生等离子体，从而消除金属污染物的主要贡献者。