ELECTROSTATIC DISCHARGE PROTECTION BOARD
    32.
    发明申请
    ELECTROSTATIC DISCHARGE PROTECTION BOARD 审中-公开
    静电放电保护板

    公开(公告)号:US20160029479A1

    公开(公告)日:2016-01-28

    申请号:US14807502

    申请日:2015-07-23

    摘要: An electrostatic discharge (ESD) protection board may include an electrostatic discharge (ESD) protection board, including a substrate, a pattern layer including circuit patterns formed on the substrate, and a high-voltage conductive material formed on the circuit patterns, which are insulated from each other, and a portion of the substrate between the circuit patterns.

    摘要翻译: 静电放电(ESD)保护板可以包括包括基板的静电放电(ESD)保护板,包括形成在基板上的电路图案的图案层和形成在电路图案上的高压导电材料,其被绝缘 彼此之间以及基板的一部分在电路图案之间。

    TRANSMISSION DEVICE
    33.
    发明申请
    TRANSMISSION DEVICE 有权
    传输设备

    公开(公告)号:US20150334819A1

    公开(公告)日:2015-11-19

    申请号:US14654797

    申请日:2014-01-13

    申请人: ALCATEL LUCENT

    IPC分类号: H05K1/02 H01P3/08

    摘要: Transmission device including at least one electric conductor for the transmission of an AC signal and a dielectric material at least partly surrounding the at least one conductor. The dielectric material includes dipoles. The device further includes a dipole orienting system adapted to orient the dipoles and to force the dipoles in a saturation regime in order to limit the movement of the dipoles when the at least one electric conductor conducts an AC signal.

    摘要翻译: 传输装置包括用于传输AC信号的至少一个电导体和至少部分地围绕该至少一个导体的电介质材料。 电介质材料包括偶极子。 该装置还包括偶极取向系统,其适于定向偶极子并且迫使偶极子处于饱和状态,以便当至少一个电导体传导AC信号时限制偶极子的移动。

    Simultaneous and selective partitioning of via structures using plating resist
    34.
    发明授权
    Simultaneous and selective partitioning of via structures using plating resist 有权
    使用电镀抗蚀剂同时选择性地分配通孔结构

    公开(公告)号:US08667675B2

    公开(公告)日:2014-03-11

    申请号:US12190551

    申请日:2008-08-12

    IPC分类号: H01K3/10

    摘要: Systems and methods for simultaneously partitioning a plurality of via structures into electrically isolated portions by using plating resist within a PCB stackup are disclosed. Such via structures are made by selectively depositing plating resist in one or more locations in a sub-composite structure. A plurality of sub-composite structures with plating resist deposited in varying locations are laminated to form a PCB stackup of a desired PCB design. Through-holes are drilled through the PCB stackup through conductive layers, dielectric layers and through the plating resist. Thus, the PCB panel has multiple through-holes that can then be plated simultaneously by placing the PCB panel into a seed bath, followed by immersion in an electroless copper bath. Such partitioned vias increase wiring density and limit stub formation in via structures. Such partitioned vias allow a plurality of electrical signals to traverse each electrically isolated portion without interference from each other.

    摘要翻译: 公开了通过在PCB堆叠中使用电镀抗蚀剂将多个通孔结构同时分隔成电隔离部分的系统和方法。 通过在子复合结构中的一个或多个位置选择性地沉积电镀抗蚀剂来制造这种通孔结构。 具有在不同位置沉积的电镀抗蚀剂的多个亚复合结构层压以形成期望的PCB设计的PCB堆叠。 通过PCB堆叠穿过导电层,电介质层和通过电镀抗蚀剂钻穿孔。 因此,PCB面板具有多个通孔,然后可以通过将PCB面板放置在种子池中,然后浸入无电镀铜浴中而同时进行电镀。 这种分隔的通孔增加布线密度并限制通孔结构中的短截线形成。 这种分隔的通孔允许多个电信号穿过每个电隔离部分而没有彼此的干扰。

    EMI Voltage Switchable Dielectric Materials Having Nanophase Materials
    38.
    发明申请
    EMI Voltage Switchable Dielectric Materials Having Nanophase Materials 审中-公开
    具有纳米相材料的EMI电压可切换介质材料

    公开(公告)号:US20110198544A1

    公开(公告)日:2011-08-18

    申请号:US13031071

    申请日:2011-02-18

    摘要: Various embodiments of the invention disclosed herein provide for adjusting the electrical response of a voltage switchable dielectric material by incorporating one or more nanophase materials. Various aspects provide for a VSDM having improved electrical and/or physical properties. In some cases, a VSDM may have improved (e.g., lower) leakage current at a given voltage. A VSDM may have improved resistance to ESD events, and may have improved resistance to degradation associated with protecting against an ESD event.

    摘要翻译: 本文公开的本发明的各种实施例提供了通过并入一种或多种纳米相材料来调节可切换电介质材料的电响应。 各种方面提供具有改进的电和/或物理性质的VSDM。 在一些情况下,VSDM可以在给定电压下具有改善的(例如较低)的漏电流。 VSDM可以具有改善的对ESD事件的抵抗力,并且可以改善与防​​止ESD事件相关的降解抗性。