公开(公告)号：US20190140612A1

公开(公告)日：2019-05-09

申请号：US16182902

申请日：2018-11-07

申请人： MOHANNAD ELSAYAD ,  FREDERIC NABKI ,  ANOIR BOUCHAMI

发明人： MOHANNAD ELSAYAD ,  FREDERIC NABKI ,  ANOIR BOUCHAMI

IPC分类号： H03H9/02 ,  H03H3/007 ,  H03H9/24 ,  H03F3/45 ,  H03G3/30

摘要： Reference oscillators are ubiquitous in timing applications generally, and in modern wireless communication devices particularly. Microelectromechanical system (MEMS) resonators are of particular interest due to their small size and potential for integration with other MEMS devices and electrical circuits on the same chip. In order to support their use in high volume low cost applications it would be beneficial for MEMS designers to have MEMS resonator designs and manufacturing processes that whilst employing low cost low resolution semiconductor processing yield improved resonator performance thereby reducing the requirements of the oscillator circuitry. It would be further beneficial for the oscillator circuitry to be able to leverage the improved noise performance of differential TIAs without sacrificing power consumption.

公开(公告)号：US20180254761A1

公开(公告)日：2018-09-06

申请号：US15971257

申请日：2018-05-04

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Mark D. JAFFE ,  Anthony K. STAMPER ,  Randy L. WOLF

IPC分类号： H03H3/007 ,  H03H9/54 ,  H03H9/56 ,  G06F17/50 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02 ,  H03H9/24 ,  H03H9/10 ,  H03H9/64 ,  H03H9/15

CPC分类号： H03H3/007 ,  G06F17/5063 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02007 ,  H03H9/02244 ,  H03H9/02992 ,  H03H9/1071 ,  H03H9/2447 ,  H03H9/2452 ,  H03H9/2457 ,  H03H9/2463 ,  H03H9/54 ,  H03H9/56 ,  H03H9/64 ,  H03H2003/022 ,  H03H2003/023 ,  H03H2003/027 ,  H03H2009/155 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

摘要： Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

公开(公告)号：US10056877B2

公开(公告)日：2018-08-21

申请号：US14874522

申请日：2015-10-05

申请人： Teknologian tutkimuskeskus VTT Oy

发明人： Antti Jaakkola ,  Panu Pekko ,  Mika Prunnila ,  Tuomas Pensala

IPC分类号： H03H9/24 ,  H03H3/10 ,  H03H9/02 ,  H03H3/04 ,  H03H3/007

CPC分类号： H03H9/02448 ,  H03H3/0076 ,  H03H9/2405 ,  H03H9/2447 ,  H03H2009/241

摘要： The invention provides a microelectromechanical resonator device comprising a support structure and a resonator manufactured on a (100) or (110) semiconductor wafer, wherein the resonator is suspended to the support structure and comprises at least one beam being doped to a doping concentration of 1.1*1020 cm−3 or more with an n-type doping agent and is being capable of resonating in a length-extensional, flexural resonance or torsional mode upon suitable actuation. In particular, the doping concentration and angle of the beam are chosen so as to simultaneously produce zero or close to zero second order TCF, and even more preferably zero or close to zero first and second order TCFs, for the resonator in said resonance mode, thus providing a temperature stable resonator.

公开(公告)号：US20180226938A1

公开(公告)日：2018-08-09

申请号：US15874259

申请日：2018-01-18

申请人： MURATA MANUFACTURING CO., LTD.

发明人： Heikki KUISMA

IPC分类号： H03H3/007 ,  G01R33/028 ,  G01C19/5726 ,  G01R33/00 ,  H03H9/24

摘要： The present invention relates to a method and a device for stabilization of amplitude of a mechanical vibration of a mechanical resonator in a microelectromechanical sensor device. The method comprises exciting the mechanical resonator with an oscillating excitation force by an input transducer. The input transducer is driven with an input AC voltage having essentially constant amplitude at a frequency that deviates from the resonant frequency of the mechanical resonator by a first frequency difference. The first frequency difference is configured to stabilize the amplitude of the mechanical vibration.

公开(公告)号：US10029912B2

公开(公告)日：2018-07-24

申请号：US14642453

申请日：2015-03-09

申请人： Kolo Technologies, Inc.

发明人： Yongli Huang

IPC分类号： H03H7/00 ,  H03H7/01 ,  H03H3/007 ,  H03H9/02 ,  H03H9/24 ,  H03H9/46 ,  B81C1/00 ,  H02N1/00 ,  B81B3/00 ,  H04R19/00

摘要： A capacitive micromachined ultrasound transducer (cMUT) is provided. The cMUT has a first layer having a first electrode and a second layer having a second electrode opposing the first electrode to define a gap width therebetween. At least one of the first layer and the second layer includes a flexible layer having a contact area in contact to a support, such that the first electrode and the second electrode are movable relative to each other to cause a change of the gap width. The support has two substantially continuous shoulder sides each extending along with the flexible layer, each shoulder side making graduated contact with more contact area of the flexible layer as the flexible layer deforms toward the shoulder side, causing the flexible layer to have a dynamically changing spring strength.

公开(公告)号：US20180191327A1

公开(公告)日：2018-07-05

申请号：US15477758

申请日：2017-04-03

申请人： WIN Semiconductors Corp.

发明人： CHIA-TA CHANG ,  CHUN-JU WEI ,  KUO-LUNG WENG

IPC分类号： H03H9/02 ,  H03H3/007 ,  H03H9/54 ,  H03H9/205

CPC分类号： H03H3/02 ,  H03H3/04 ,  H03H9/587 ,  H03H2003/021 ,  H03H2003/0442

摘要： A method for forming cavity of bulk acoustic wave resonator comprising following steps of: forming a sacrificial epitaxial structure mesa on a compound semiconductor substrate; forming an insulating layer on the sacrificial epitaxial structure mesa and the compound semiconductor substrate; polishing the insulating layer by a chemical-mechanical planarization process to form a polished surface; forming a bulk acoustic wave resonance structure on the polished surface, which comprises following steps of: forming a bottom electrode layer on the polished surface; forming a piezoelectric layer on the bottom electrode layer; and forming a top electrode layer on the piezoelectric layer, wherein the bulk acoustic wave resonance structure is located above the sacrificial epitaxial structure mesa; and etching the sacrificial epitaxial structure mesa to form a cavity, wherein the cavity is located under the bulk acoustic wave resonance structure.

公开(公告)号：US20180183404A1

公开(公告)日：2018-06-28

申请号：US15850453

申请日：2017-12-21

申请人： Commissariat A L'Energie Atomique Et Aux Energies Alternatives ,  Safran Electronics & Defense

发明人： Guillaume Jourdan ,  Guillaume Lehee

IPC分类号： H03H9/02 ,  H03H9/24 ,  H03H3/007

CPC分类号： H03H9/02448 ,  B81B3/0045 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  G01P15/003 ,  G01P15/0802 ,  G01P2015/0882 ,  H03H3/0072 ,  H03H9/02338 ,  H03H9/2452 ,  H03H2009/02307

摘要： Microelectronic structure comprising a mobile mass mechanically linked to a first and to a second mechanical element by first and second mechanical linking device respectively, a polarisation source for the second mechanical linking device. The second mechanical linking means comprises two linking elements and a thermal reservoir placed between the linking elements, where at least one of the linking elements is made of piezoresistive material, where at least one of the first and second linking elements exhibit thermoelasticity properties. The thermal reservoir exhibits a thermal capacity which is different from those of the linking elements. The second linking device and the mobile mass are arranged relative to each other such that displacement of the mobile mass applies a mechanical stress to the second linking means.

公开(公告)号：US10003320B1

公开(公告)日：2018-06-19

申请号：US15595486

申请日：2017-05-15

申请人： SiTime Corporation

发明人： David Raymond Pedersen ,  Aaron Partridge ,  Thor Juneau

IPC分类号： H03H9/24 ,  H03H3/007

CPC分类号： H03H9/2405 ,  H03H3/0072 ,  H03H9/02259 ,  H03H9/02433 ,  H03H9/2457 ,  H03H9/2468 ,  H03H2009/02456 ,  H03H2009/02496

摘要： A microelectromechanical system (MEMS) resonator includes a resonant semiconductor structure, drive electrode, sense electrode and electrically conductive shielding structure. The first drive electrode generates a time-varying electrostatic force that causes the resonant semiconductor structure to resonate mechanically, and the first sense electrode generates a timing signal in response to the mechanical resonance of the resonant semiconductor structure. The electrically conductive shielding structure is disposed between the first drive electrode and the first sense electrode to shield the first sense electrode from electric field lines emanating from the first drive electrode.

公开(公告)号：US09912313B2

公开(公告)日：2018-03-06

申请号：US14360403

申请日：2012-10-23

申请人： Micro Crystal AG

发明人： Léa Deillon ,  Silvio Dalla Piazza ,  Thierry Hessler

IPC分类号： H03H3/007 ,  H03H3/02 ,  B81C1/00 ,  H03H9/02 ,  H03H3/04

CPC分类号： H03H3/0072 ,  B81C1/00269 ,  H03H3/02 ,  H03H3/04 ,  H03H9/02244 ,  H03H2003/022 ,  H03H2003/026 ,  H03H2003/0478 ,  H03H2003/0485 ,  H03H2003/0492 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49574

摘要： An element is arranged to cooperate with another part so as to form an encapsulation device for a component including the element at least partially coated with a metallization. The metallization includes at least one metal layer protected by an intermetallic compound which is coated by a non-diffused portion of a material whose melting point is lower than 250° C. A method of fabricating the encapsulation device is also disclosed.

公开(公告)号：US20170366153A1

公开(公告)日：2017-12-21

申请号：US15691249

申请日：2017-08-30

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Mark D. JAFFE ,  Anthony K. STAMPER ,  Randy L. WOLF

IPC分类号： H03H3/007 ,  H03H9/56 ,  G06F17/50 ,  H03H3/02 ,  H03H9/02 ,  H03H9/24 ,  H03H9/10 ,  H03H9/64 ,  H03H9/54 ,  H03H3/08 ,  H03H9/15

CPC分类号： H03H3/007 ,  G06F17/5063 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02007 ,  H03H9/02244 ,  H03H9/02992 ,  H03H9/1071 ,  H03H9/2447 ,  H03H9/2452 ,  H03H9/2457 ,  H03H9/2463 ,  H03H9/54 ,  H03H9/56 ,  H03H9/64 ,  H03H2003/022 ,  H03H2003/023 ,  H03H2003/027 ,  H03H2009/155 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

摘要： Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.