公开(公告)号：US10711324B2

公开(公告)日：2020-07-14

申请号：US16300565

申请日：2017-07-05

申请人： SOOCHOW UNIVERSITY

发明人： Shuao Wang ,  Huangjie Lu ,  Yaxing Wang

IPC分类号： C22B60/02 ,  C22B3/44 ,  C30B7/14 ,  C01B19/00 ,  C22B59/00 ,  C30B29/10 ,  C30B29/46 ,  C30B7/10

摘要： The present invention relates to a method for removing radioactive element thorium in a rare earth mineral, comprising: mixing the rare earth mineral with selenium dioxide in water, reacting radioactive element thorium with selenium dioxide by hydrothermal method, cooling to form a crystal, and separating the crystal to remove the radioactive element thorium. In the invention, tetravalent element thorium is selectively bound to inorganic ligand selenium dioxide in a hydrothermal environment to form a crystal, thereby achieving removal of radioactive element thorium. The method has high crystallization rate and high decontamination efficiency, and removes thorium from trivalent lanthanide element by crystallization solidification under a uniform reaction condition. Compared to a conventional industrial method for thorium separation, the method has low energy consumption and high separation ratio, enables one-step solidification separation, and effectively avoids the disadvantages of redundant separation operations and a large amount of organic and radioactive liquid wastes.

公开(公告)号：US10446393B2

公开(公告)日：2019-10-15

申请号：US15957565

申请日：2018-04-19

申请人： ASM IP Holding B.V.

发明人： Nupur Bhargava ,  John Tolle ,  Joe Margetis ,  Matthew Goodman ,  Robert Vyne

IPC分类号： H01L21/02 ,  H01L29/66 ,  C30B29/10 ,  C30B25/10 ,  C30B25/02 ,  C30B29/06 ,  C30B29/52

摘要： A method for forming a silicon-containing epitaxial layer is disclosed. The method may include, heating a substrate to a temperature of less than approximately 950° C. and exposing the substrate to a first silicon source comprising a hydrogenated silicon source, a second silicon source, a dopant source, and a halogen source. The method may also include depositing a silicon-containing epitaxial layer wherein the dopant concentration within the silicon-containing epitaxial layer is greater than 3×1021 atoms per cubic centimeter.

公开(公告)号：US10409138B2

公开(公告)日：2019-09-10

申请号：US16357640

申请日：2019-03-19

申请人： University of Houston System

发明人： P. Shiv Halasyamani ,  Hongwei Yu

IPC分类号： G02F1/355 ,  G02F1/37 ,  G02F1/35 ,  C30B29/10 ,  C30B17/00 ,  C30B1/00 ,  H01S5/00

摘要： Disclosed is a nonlinear optical (NLO) material for use in deep-UV applications, and methods of fabrication thereof. The NLO is fabricated from a plurality of components according to the formula AqByCz and a crystallographic non-centrosymmetric (NCS) structure. The NLO material may be fabricated as a polycrystalline or a single crystal material. In an embodiment, the material may be according to a formula Ba3ZnB5PO14.

公开(公告)号：US10381526B2

公开(公告)日：2019-08-13

申请号：US15502204

申请日：2016-01-13

申请人： XI'AN JIAOTONG UNIVERSITY

发明人： Yufeng Li ,  Shuai Wang ,  Feng Yun

IPC分类号： H01L21/00 ,  H01L33/50 ,  C30B29/28 ,  C09K11/77 ,  C30B29/10

摘要： The present invention provide an orderly patterned remote phosphor crystal material and method for preparation the material and its application, which adopts short-pulse laser to make micro-structure arrays on the surface of phosphor crystal material to enhance the light extraction efficiency of the LED based on the material. The present invention overcomes the phosphor crystal material's properties of hard and dry/wet etching resistance and simplifies the processing steps, which accelerate the processing and improve the producing efficiency. The present invention is able to be performed under room temperature and environment friendly and the micro-structure is stable, which has broad application prospects in white LED field.

公开(公告)号：US10281796B2

公开(公告)日：2019-05-07

申请号：US16120366

申请日：2018-09-03

申请人： University of Houston System

发明人： P. Shiv Halasyamani ,  Hongwei Yu

IPC分类号： G02F1/355 ,  C30B1/00 ,  C30B17/00 ,  C30B29/10 ,  G02F1/35 ,  G02F1/37 ,  H01S5/00

摘要： Disclosed is a nonlinear optical (NLO) material for use in deep-UV applications, and methods of fabrication thereof. The NLO is fabricated from a plurality of components according to the formula AqByCz and a crystallographic non-centrosymmetric (NCS) structure. The NLO material may be fabricated as a polycrystalline or a single crystal material. In an embodiment, the material may be according to a formula Ba3ZnB5PO14.

公开(公告)号：US10005675B2

公开(公告)日：2018-06-26

申请号：US14900016

申请日：2013-06-20

申请人： Technical Institute of Physics and Chemistry, Chinese Academy of Sciences ,  Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences

发明人： Guochun Zhang ,  Junhua Luo ,  Mingjun Xia ,  Sangen Zhao ,  Yicheng Wu

IPC分类号： C30B29/22 ,  C01B35/12 ,  C30B29/10 ,  C30B19/02 ,  C30B19/06 ,  C30B33/02 ,  C30B9/06 ,  C30B9/12 ,  C30B19/04

CPC分类号： C01B35/128 ,  C30B9/06 ,  C30B9/12 ,  C30B19/02 ,  C30B19/04 ,  C30B19/062 ,  C30B29/10 ,  C30B29/22 ,  C30B33/02

摘要： The present invention relates to the field of nonlinear optical crystal materials and provided herein a Li4Sr(BO3)2 compound, a Li4Sr(BO3)2 nonlinear optical crystal as well as preparation method and use thereof. The Li4Sr(BO3)2 nonlinear optical crystal has a second harmonic conversion efficiency at 1064 nm of about two times that of a KH2PO4 (KDP) crystal, and an UV absorption cut-off edge less than 190 nm. Furthermore, the crystal did not disintegrate. By flux method with Li2O, Li2O—B2O and Li2O—B2O3—LiF used as flux agent, large-size and transparent Li4Sr(BO3)2 nonlinear optical crystal can grow. The Li4Sr(BO3)2 crystal had stable physicochemical properties, moderate hardness, and was easy to cut, processing, preserve and use. Therefore it can be used for preparing nonlinear optical devices and thus for developing nonlinear optical applications in the ultraviolet and deep-ultraviolet band.

公开(公告)号：US20180085357A1

公开(公告)日：2018-03-29

申请号：US15567549

申请日：2016-04-22

申请人： PROXIMAGEN LIMITED

发明人： Edward SAVORY

IPC分类号： A61K31/437 ,  C07D471/04 ,  C07D407/14 ,  C07D307/20 ,  C30B29/10

CPC分类号： A61K31/437 ,  A61K2300/00 ,  C07D307/20 ,  C07D407/14 ,  C07D471/04 ,  C30B29/10

摘要： A specific crystalline mesylate salt form of (3S)-Tetrahydrofuran-3-yl (4S)-4-isopropyl-1,4,6,7-tetrahydro-5H-imidazo[4,5-c]pyridine-5-carboxylate, and the use of the same in medicine. (Formula (I))

公开(公告)号：US09897705B2

公开(公告)日：2018-02-20

申请号：US14989242

申请日：2016-01-06

申请人： Toshiba Electron Tubes & Devices Co., Ltd.

发明人： Hiroshi Horiuchi ,  Hiroshi Aida ,  Atsuya Yoshida

IPC分类号： G01T1/202 ,  C09K11/62 ,  C23C14/34 ,  C30B23/02 ,  C30B23/08 ,  C30B25/02 ,  C30B25/06 ,  C30B29/10 ,  G01T1/20 ,  G21K4/00

CPC分类号： G01T1/2023 ,  C09K11/628 ,  C23C14/0694 ,  C23C14/34 ,  C30B23/02 ,  C30B23/08 ,  C30B25/00 ,  C30B25/02 ,  C30B25/06 ,  C30B29/10 ,  C30B29/12 ,  C30B29/605 ,  G01T1/2018 ,  G01T1/202 ,  G21K2004/12

摘要： According to the embodiment, a radiation detector includes a photoelectric conversion substrate converting light to an electrical signal and a scintillator layer being in contact with the photoelectric conversion substrate and converting externally incident radiation to light. The scintillator layer is made of a phosphor containing Tl as an activator in CsI, which is a halide. A concentration of the activator in the phosphor is 1.6 mass %±0.4 mass %, and a concentration distribution of the activator in an in-plane direction and a film thickness direction is within ±15%.

公开(公告)号：US09702054B2

公开(公告)日：2017-07-11

申请号：US14537487

申请日：2014-11-10

申请人： Seoul Semiconductor Co., Ltd.

发明人： Jacob J. Richardson ,  Evan C. O'Hara ,  Daniel Estrada

IPC分类号： C30B7/04 ,  C30B19/00 ,  C30B29/16 ,  C25D7/12 ,  H01L21/02 ,  C30B7/00 ,  C30B29/10 ,  C23C18/12 ,  C23C18/16

CPC分类号： C30B7/04 ,  C23C18/1216 ,  C23C18/1245 ,  C23C18/125 ,  C23C18/1283 ,  C23C18/1651 ,  C25D7/123 ,  C30B7/00 ,  C30B19/00 ,  C30B29/10 ,  C30B29/16 ,  H01L21/02175 ,  H01L21/02282 ,  H01L21/02293 ,  H01L21/02304 ,  H01L21/02307

摘要： A solution deposition method including: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.

公开(公告)号：US09701542B2

公开(公告)日：2017-07-11

申请号：US14175697

申请日：2014-02-07

申请人： University of Central Florida Research Foundation, Inc.

发明人： Nina Orlovskaya ,  Zhilin Xie ,  Richard G. Blair

IPC分类号： C01B35/04 ,  C30B1/10 ,  C30B29/10 ,  C04B35/58 ,  C04B35/626 ,  C04B35/645

CPC分类号： C01B35/04 ,  C04B35/58064 ,  C04B35/6261 ,  C04B35/645 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/666 ,  C04B2235/76 ,  C04B2235/761 ,  C04B2235/767 ,  C04B2235/80 ,  C30B1/10 ,  C30B29/10

摘要： The presently disclosed and/or claimed inventive concept(s) relates generally to hexagonal osmium boride, OsB2, and methods of producing the same. In one non-limiting embodiment, hexagonal OsB2 is produced by mechanochemical synthesis of osmium and boron in a high energy ball mill.