公开(公告)号：US08092867B2

公开(公告)日：2012-01-10

申请号：US11867587

申请日：2007-10-04

申请人： Dmitry Karshtedt ,  Joerg Rockenberger ,  Fabio Zürcher ,  Brent Ridley ,  Erik Scher

发明人： Dmitry Karshtedt ,  Joerg Rockenberger ,  Fabio Zürcher ,  Brent Ridley ,  Erik Scher

IPC分类号： B05D3/06 ,  C07F7/02 ,  C07F7/30

CPC分类号： H01L21/02628 ,  C08G77/60 ,  C09D183/16 ,  H01L21/02282 ,  H01L27/1214 ,  H01L27/1292

摘要： Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae SinH2n and SinH2n+2 as well as alkyl- and arylsilanes, to produce soluble silicon polymers as a precursor to silicon films having low carbon content.

摘要翻译： 含有通式SinH2n和SinH2n + 2以及烷基和芳基硅烷的氢化硅烷化合物的受控聚合和/或低聚的组合物和方法，以生产可溶性硅聚合物作为具有低碳含量的硅膜的前体。

公开(公告)号：US20100285972A1

公开(公告)日：2010-11-11

申请号：US11975104

申请日：2007-10-17

申请人： Roberto Dubrow ,  Robert Hugh Daniels ,  J. Wallace Parce ,  Matthew Murphy ,  Jim Hamilton ,  Erik Scher ,  Dave Stumbo ,  Chunming Niu ,  Linda T. Romano ,  Jay Goldman ,  Vijendra Sahi ,  Jeffery A. Whiteford

发明人： Roberto Dubrow ,  Robert Hugh Daniels ,  J. Wallace Parce ,  Matthew Murphy ,  Jim Hamilton ,  Erik Scher ,  Dave Stumbo ,  Chunming Niu ,  Linda T. Romano ,  Jay Goldman ,  Vijendra Sahi ,  Jeffery A. Whiteford

IPC分类号： C40B40/00 ,  C40B30/00

CPC分类号： C12N15/87 ,  B01J20/28007 ,  B01J20/3242 ,  B01J2220/54 ,  B81B3/0089 ,  B82Y5/00 ,  B82Y30/00 ,  H01J49/0418

摘要： This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates, as well as methods and uses for such substrates.

摘要翻译： 本发明提供了新颖的纳米纤维增强表面积基底和包括这种基底的结构，以及这种基底的方法和用途。

公开(公告)号：US07572393B2

公开(公告)日：2009-08-11

申请号：US10928625

申请日：2004-08-26

申请人： Jeffery A. Whiteford ,  Mihai A. Buretea ,  Linh Nguyen ,  Erik Scher

发明人： Jeffery A. Whiteford ,  Mihai A. Buretea ,  Linh Nguyen ,  Erik Scher

IPC分类号： H01B1/12 ,  C09K11/00 ,  C09K11/08 ,  H01L31/00 ,  H01L51/00

CPC分类号： H01L51/0068 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  G01N33/588 ,  H01B1/128 ,  H01G9/2031 ,  H01G9/2059 ,  H01L51/4226

摘要： The present invention provides polymeric compositions that can be used to modify charge transport across a nanocrystal surface or within a nanocrystal-containing matrix, as well as methods for making and using the novel compositions.

摘要翻译： 本发明提供了可用于改变穿过纳米晶体表面或纳米晶体的基质内的电荷转移的聚合物组合物，以及制备和使用该新型组合物的方法。

公开(公告)号：US20060040103A1

公开(公告)日：2006-02-23

申请号：US11147670

申请日：2005-06-07

申请人： Jeffery Whiteford ,  Rhett Brewer ,  Mihai Buretea ,  Jian Chen ,  Karen Cruden ,  Xiangfeng Duan ,  William Freeman ,  David Heald ,  Francisco Leon ,  Chao Liu ,  Andreas Meisel ,  Kyu Min ,  J. Parce ,  Erik Scher

发明人： Jeffery Whiteford ,  Rhett Brewer ,  Mihai Buretea ,  Jian Chen ,  Karen Cruden ,  Xiangfeng Duan ,  William Freeman ,  David Heald ,  Francisco Leon ,  Chao Liu ,  Andreas Meisel ,  Kyu Min ,  J. Parce ,  Erik Scher

IPC分类号： B32B5/16

CPC分类号： C09C1/3081 ,  B82Y30/00 ,  C01P2004/16 ,  C01P2004/45 ,  C01P2004/54 ,  C01P2004/64 ,  C01P2006/10 ,  C01P2006/40 ,  C01P2006/60 ,  C09C3/006 ,  C09C3/063 ,  C09C3/12 ,  H01G4/14 ,  Y10S977/773 ,  Y10T428/2982 ,  Y10T428/2989 ,  Y10T428/2991 ,  Y10T428/2993 ,  Y10T428/2995 ,  Y10T428/2996 ,  Y10T428/2998

摘要： Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure and for reversibly modifying nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures.

公开(公告)号：US06949206B2

公开(公告)日：2005-09-27

申请号：US10656910

申请日：2003-09-04

申请人： Jeffery A. Whiteford ,  Mihai A. Buretea ,  Erik Scher

发明人： Jeffery A. Whiteford ,  Mihai A. Buretea ,  Erik Scher

IPC分类号： B32B19/00 ,  B32B19/02 ,  B82B3/00 ,  C08L101/12 ,  C09K11/00 ,  C09K11/02 ,  C09K11/08 ,  C12N20060101 ,  C12N13/00 ,  G01N33/58 ,  H01B1/00 ,  H01B1/12 ,  H01L23/00 ,  H01L31/00 ,  H01L51/00

CPC分类号： G01N33/588 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  H01B1/128 ,  H01G9/2031 ,  H01G9/2059 ,  H01L51/0068 ,  H01L51/4226 ,  Y02E10/549 ,  Y02P70/521

摘要： The present invention provides compositions (small molecules, oligomers and polymers) that can be used to modify charge transport across a nanocrystal surface or within a nanocrystal-containing matrix, as well as methods for making and using the novel compositions.

公开(公告)号：US20170098508A1

公开(公告)日：2017-04-06

申请号：US15385727

申请日：2016-12-20

申请人： Arvind KAMATH ,  Criswell CHOI ,  Patrick SMITH ,  Erik SCHER ,  Jiang LI

发明人： Arvind KAMATH ,  Criswell CHOI ,  Patrick SMITH ,  Erik SCHER ,  Jiang LI

IPC分类号： H01G4/40 ,  H01L23/66 ,  H01G4/12 ,  H01Q1/38 ,  H01G4/008 ,  H01G4/01 ,  H01G4/224 ,  H01Q1/22 ,  H01L49/02 ,  H01G4/30

CPC分类号： H01G4/40 ,  H01G4/002 ,  H01G4/005 ,  H01G4/008 ,  H01G4/01 ,  H01G4/10 ,  H01G4/1209 ,  H01G4/224 ,  H01G4/30 ,  H01G4/306 ,  H01G4/33 ,  H01G13/00 ,  H01L23/66 ,  H01L27/016 ,  H01L28/60 ,  H01L2223/6677 ,  H01Q1/22 ,  H01Q1/2283 ,  H01Q1/38 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49016

摘要： High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.

公开(公告)号：US20150146345A1

公开(公告)日：2015-05-28

申请号：US14613178

申请日：2015-02-03

申请人： Arvind KAMATH ,  Criswell CHOI ,  Patrick SMITH ,  Erik SCHER ,  Jiang LI

发明人： Arvind KAMATH ,  Criswell CHOI ,  Patrick SMITH ,  Erik SCHER ,  Jiang LI

IPC分类号： H01G4/10 ,  H01Q1/22 ,  H01G4/005 ,  H01G4/30

CPC分类号： H01G4/40 ,  H01G4/002 ,  H01G4/005 ,  H01G4/008 ,  H01G4/01 ,  H01G4/10 ,  H01G4/1209 ,  H01G4/224 ,  H01G4/30 ,  H01G4/306 ,  H01G4/33 ,  H01G13/00 ,  H01L23/66 ,  H01L27/016 ,  H01L28/60 ,  H01L2223/6677 ,  H01Q1/22 ,  H01Q1/2283 ,  H01Q1/38 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49016

摘要： High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.

摘要翻译： 高精度电容器及其形成方法采用精确且高度保形的沉积工艺，用于在各种粗糙度和组成的基底上沉积绝缘层。 该方法通常包括以下步骤：通过原子层沉积（ALD）在金属衬底上沉积第一绝缘层; （b）在所述第一绝缘层上形成第一电容器电极; 和（c）在所述第一绝缘层上形成第二绝缘层，并且在所述第一电容器电极上或与所述第一电容器电极相邻。 实施例提供了一种改进的沉积工艺，其在宽范围的衬底上产生高度保形的绝缘层，从而产生改进的电容器。

公开(公告)号：US08846507B2

公开(公告)日：2014-09-30

申请号：US13897296

申请日：2013-05-17

申请人： Dmitry Karshtedt ,  Joerg Rockenberger ,  Fabio Zurcher ,  Brent Ridley ,  Erik Scher

发明人： Dmitry Karshtedt ,  Joerg Rockenberger ,  Fabio Zurcher ,  Brent Ridley ,  Erik Scher

IPC分类号： H01L21/02 ,  C08G77/00 ,  C07F7/02 ,  C09D183/16 ,  C08G77/60 ,  H01L27/12

CPC分类号： H01L21/02628 ,  C08G77/60 ,  C09D183/16 ,  H01L21/02282 ,  H01L27/1214 ,  H01L27/1292

摘要： Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae SinH2n and SinH2n+2 as well as alkyl- and arylsilanes, to produce soluble silicon polymers as a precursor to silicon films having low carbon content.

摘要翻译： 含有通式SinH2n和SinH2n + 2以及烷基和芳基硅烷的氢化硅烷化合物的受控聚合和/或低聚的组合物和方法，以生产可溶性硅聚合物作为具有低碳含量的硅膜的前体。

公开(公告)号：US08562867B2

公开(公告)日：2013-10-22

申请号：US12459574

申请日：2009-07-02

申请人： Jeffery A. Whiteford ,  Mihai A. Buretea ,  Linh Hong Nguyen ,  Erik Scher

发明人： Jeffery A. Whiteford ,  Mihai A. Buretea ,  Linh Hong Nguyen ,  Erik Scher

IPC分类号： H01B1/12 ,  H01L31/00

CPC分类号： H01L51/0068 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  G01N33/588 ,  H01B1/128 ,  H01G9/2031 ,  H01G9/2059 ,  H01L51/4226

摘要： The present invention provides polymeric compositions that can be used to modify charge transport across a nanocrystal surface or within a nanocrystal-containing matrix, as well as methods for making and using the novel compositions.

公开(公告)号：US08426905B2

公开(公告)日：2013-04-23

申请号：US12243880

申请日：2008-10-01

申请人： Arvind Kamath ,  Erik Scher ,  Patrick Smith ,  Aditi Chandra ,  Steven Molesa

发明人： Arvind Kamath ,  Erik Scher ,  Patrick Smith ,  Aditi Chandra ,  Steven Molesa

IPC分类号： H01L29/788

CPC分类号： H01L21/36 ,  C23C18/08 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/1295 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/28273 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/76871 ,  H01L21/76895 ,  H01L27/1285 ,  H01L27/1292 ,  H01L28/40 ,  H01L29/0657 ,  H01L29/66143 ,  H01L29/6675 ,  H01L29/7881 ,  H01L29/872 ,  H05K1/16 ,  H05K1/162 ,  H05K3/125 ,  H05K2201/098

摘要： The present invention relates to electrically active devices (e.g., capacitors, transistors, diodes, floating gate memory cells, etc.) having dielectric, conductor, and/or semiconductor layers with smooth and/or dome-shaped profiles and methods of forming such devices by depositing or printing (e.g., inkjet printing) an ink composition that includes a semiconductor, metal, or dielectric precursor. The smooth and/or dome-shaped cross-sectional profile allows for smooth topological transitions without sharp steps, preventing feature discontinuities during deposition and allowing for more complete step coverage of subsequently deposited structures. The inventive profile allows for both the uniform growth of oxide layers by thermal oxidation, and substantially uniform etching rates of the structures. Such oxide layers may have a uniform thickness and provide substantially complete coverage of the underlying electrically active feature. Uniform etching allows for an efficient method of reducing a critical dimension of an electrically active structure by simple isotropic etch.

摘要翻译： 本发明涉及具有平滑和/或圆顶形轮廓的电介质，导体和/或半导体层的电活性器件（例如，电容器，晶体管，二极管，浮动栅极存储单元等）和形成这种器件的方法 通过沉积或印刷（例如喷墨印刷）包括半导体，金属或电介质前体的油墨组合物。 平滑和/或圆顶形的横截面轮廓允许平滑的拓扑转变而没有尖锐的步骤，防止沉积期间的特征不连续性，并允许随后沉积的结构的更完整的阶梯覆盖。 本发明的轮廓允许通过热氧化均匀生长氧化物层，以及基本均匀的结构蚀刻速率。 这样的氧化物层可以具有均匀的厚度并且提供基本的电活性特征的基本上完整的覆盖。 均匀蚀刻允许通过简单的各向同性蚀刻来降低电活性结构的临界尺寸的有效方法。