公开(公告)号：US20180230405A1

公开(公告)日：2018-08-16

申请号：US15890398

申请日：2018-02-07

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Emil A. Kneer ,  Yasuo Sugishima

IPC: C11D3/30 ,  C11D3/43 ,  C11D3/04 ,  C11D3/20 ,  C11D3/34 ,  H01L21/02

Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, water soluble sulfones, and water soluble ethers; 3) at least one boron-containing compound selected from the group consisting of boric acid, boronic acids, and salts thereof; and 4) water.

公开(公告)号：US20180136563A1

公开(公告)日：2018-05-17

申请号：US15813431

申请日：2017-11-15

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Raj Sakamuri ,  Sanjay Malik ,  Ognian Dimov

IPC: G03F7/42 ,  C08G73/10 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  H01L21/3065 ,  H01L21/306

CPC classification number: G03F7/425 ,  C08G73/1067 ,  G03F7/037 ,  G03F7/11 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/325 ,  G03F7/40 ,  G03F7/405 ,  G03F7/427 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31133

Abstract: This disclosure relates to a process for stripping an organic film on a patterned semiconductor substrate. The process includes treating the organic film with an aqueous stripper composition to remove the organic film in one step. The organic film includes at least a first layer and a second layer, the first layer has a dissolution rate of at most about 0.01 μ/min in a developer at 25° C., and the second layer has a dissolution rate of greater than about 0.01 μ/min in the developer at 25° C.

公开(公告)号：US20170335252A1

公开(公告)日：2017-11-23

申请号：US15597395

申请日：2017-05-17

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Atsushi Mizutani ,  William A. Wojtczak ,  Yasuo Sugishima

IPC: C11D11/00 ,  C11D3/43 ,  C11D3/30 ,  C11D3/00 ,  C11D3/28 ,  C11D3/20 ,  H01L21/311 ,  C11D3/34

CPC classification number: C11D11/0047 ,  C11D3/0073 ,  C11D3/2065 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/28 ,  C11D3/30 ,  C11D3/3427 ,  C11D3/43 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426 ,  H01L21/31111 ,  H01L21/31133

Abstract: This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one compound comprising at least three hydroxyl groups; 4) at least one carboxylic acid; 5) at least one Group II metal cation; 6) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 7) water. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.

公开(公告)号：US20160186106A1

公开(公告)日：2016-06-30

申请号：US14979787

申请日：2015-12-28

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Bing Du ,  Thomas Dory ,  William A. Wojtczak

IPC: C11D11/00 ,  H01L21/02 ,  C11D3/43 ,  C11D3/30 ,  C11D7/50 ,  C11D7/32

CPC classification number: C11D11/0047 ,  C11D3/0026 ,  C11D3/2006 ,  C11D3/28 ,  C11D3/30 ,  C11D3/43 ,  C11D7/261 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/5009 ,  C11D7/5013 ,  C11D7/5022 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426 ,  H01L21/31133

Abstract: This disclosure relates to photoresist stripping compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one alcohol solvent; 3) at least one quaternary ammonium hydroxide; 4) water; 5) at least one copper corrosion inhibitor selected from 6-substituted-2,4-diamino-1,3,5-triazines; and 6) optionally, at least one defoaming surfactant.

Abstract translation: 本发明涉及含有1）至少一种水溶性极性非质子有机溶剂的光致抗蚀剂剥离组合物; 2）至少一种醇溶剂; 3）至少一种氢氧化季铵; 4）水; 5）至少一种选自6-取代-2,4-二氨基-1,3,5-三嗪的铜腐蚀抑制剂; 和6）任选的至少一种消泡表面活性剂。

公开(公告)号：US20140343199A1

公开(公告)日：2014-11-20

申请号：US14279553

申请日：2014-05-16

Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

Inventor： Sanjay Malik ,  William A. Reinerth ,  Binod B. De ,  Ahmad A. Naiini

IPC: C08G73/10 ,  C08K5/07 ,  C08K5/101 ,  C08K5/06 ,  C09D179/08 ,  C08K5/1535

CPC classification number: C08G73/1032 ,  B05D1/005 ,  B05D1/02 ,  C07C211/09 ,  C07C321/00 ,  C07C2602/08 ,  C08G73/1014 ,  C08G73/1039 ,  C08G73/1042 ,  C08G73/1067 ,  C08G73/1071 ,  C08J5/18 ,  C08J2379/08 ,  C08K5/0025 ,  C08K5/06 ,  C08K5/07 ,  C08K5/101 ,  C08K5/1535 ,  C09D179/08 ,  H01L21/02118 ,  H01L21/02282 ,  H01L23/293 ,  C08K5/37

Abstract: This disclosure relates to a polymer that includes a first repeat unit and at least one end-cap group at one end of the polymer. The first repeat unit includes at least one imide moiety and at least one indane-containing moiety. The end-cap group is capable of undergoing a cycloreversion reaction. This disclosure also relates to a thermosetting composition containing the above polymer.

Abstract translation: 本公开涉及在聚合物的一端包括第一重复单元和至少一个端帽基团的聚合物。 第一重复单元包括至少一个酰亚胺部分和至少一个含有茚满的部分。 端帽组能够进行环转反应。 本公开还涉及含有上述聚合物的热固性组合物。

公开(公告)号：US20250157825A1

公开(公告)日：2025-05-15

申请号：US18940961

申请日：2024-11-08

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Keeyoung Park ,  Mick Bjelopavlic

IPC: H01L21/306

Abstract: The present disclosure is directed to etching methods that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

公开(公告)号：US20250101263A1

公开(公告)日：2025-03-27

申请号：US18889658

申请日：2024-09-19

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Eric Turner ,  Changhong Wu ,  Bin Hu ,  Hyosang Lee

IPC: C09G1/02 ,  H01L21/321

Abstract: The present document relates to a polishing composition that includes at least one abrasive, at least one pH adjuster, at least one guanamine compound, and water. The polishing composition can be used in a method of polishing a substrate including applying the polishing composition to a surface of a substrate and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate. The surface of the substrate can include tungsten and/or molybdenum.

公开(公告)号：US20240336840A1

公开(公告)日：2024-10-10

申请号：US18624450

申请日：2024-04-02

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Atsushi Mizutani

IPC: C09K13/08 ,  H01L21/311

CPC classification number: C09K13/08 ,  H01L21/31111

Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively hafnium oxide from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

公开(公告)号：US20240309241A1

公开(公告)日：2024-09-19

申请号：US18670879

申请日：2024-05-22

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Qingmin Cheng ,  Bin Hu ,  Yannan Liang ,  Hyosang Lee ,  Liqing Wen ,  Yibin Zhang ,  Abhudaya Mishra

IPC: C09G1/02 ,  C09K13/00 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09K13/00 ,  H01L21/3212

Abstract: This disclosure relates to polishing compositions that include (1) at least one abrasive; (2) at least one organic acid or a salt thereof; (3) at least one first amine compound, the at least one first amine compound including an alkylamine having a 6-24 carbon alkyl chain; (4) at least one second amine compound containing at least two nitrogen atoms, the second amine compound being different from the first amine compound; and (5) an aqueous solvent.

公开(公告)号：US12074020B2

公开(公告)日：2024-08-27

申请号：US17960895

申请日：2022-10-06

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Mick Bjelopavlic ,  Carl Ballesteros

IPC: H01L21/02 ,  H01L21/306

CPC classification number: H01L21/02019 ,  H01L21/30604

Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.