公开(公告)号：US20040223284A1

公开(公告)日：2004-11-11

申请号：US10725983

申请日：2003-12-02

Applicant: Shibaura Mechatronics Corporation

Inventor： Munenori Iwami ,  Noboru Kuriyama ,  Koji Takeishi ,  Ikuo Hayafuji ,  Hirokazu Masuda

IPC: H02H001/00

CPC classification number: H01L21/6833 ,  G02F2001/133354 ,  H02N13/00

Abstract: There is disclosed an electrostatic attracting method in which a direct-current voltage is applied to an electrode disposed at a table formed of a dielectric material to attract/hold a substrate onto a holding surface of the table with an electrostatic force produced thereby, the method comprising a first step of applying a voltage having a predetermined polarity to the electrode to charge the holding surface with an electric charge having a polarity different from that applied to the electrode, a second step of holding the substrate in contact with the holding surface to prevent electric charges charged on the holding surface from disappearing, and a third step of applying a voltage having a polarity different from that applied in the first step to the electrode in a state in which the substrate contacts the holding surface to produce an electric charge having the same polarity as that charged at the holding surface in the first step on the holding surface of the table, and attracting/holding the substrate with the electric charge together with the electric charge charged on the holding surface in the first step.

Abstract translation: 公开了一种静电吸引方法，其中将直流电压施加到设置在由电介质材料制成的工作台上的电极上，以便由其产生的静电力将衬底吸引/保持在工作台的保持表面上，该方法 包括：向所述电极施加具有预定极性的电压的第一步骤，以与施加到所述电极的极性不同的极性的电荷对所述保持表面充电;第二步骤，保持所述基板与所述保持表面接触以防止 在保持表面上充电的电荷消失，第三步骤是在基板与保持表面接触的状态下将与第一步骤中施加的极性不同的电压施加到电极，以产生具有 与在桌子的保持表面上的第一步骤中的保持表面处的相同极性，并且吸引 在第一步骤中，将带有电荷的基板与充电在保持表面上的电荷一起保持。

公开(公告)号：US20010052354A1

公开(公告)日：2001-12-20

申请号：US09935034

申请日：2001-08-22

Applicant: Shibaura Mechatronics Corporation

Inventor： Yukinobu Nishibe ,  Akinori Iso

IPC: B08B003/02 ,  B08B003/14 ,  C23G001/02 ,  B08B007/04 ,  B08B009/20 ,  B08B003/00 ,  B08B001/02 ,  B08B007/00

CPC classification number: H01L21/67242 ,  G03F7/423 ,  H01L21/67028 ,  H01L21/6708

Abstract: A substrate is processed with a first process solution prepared by mixing sulfuric acid with a hydrogen peroxide solution, followed by processing the substrate with a second process solution. After the substrate is processed with the first process solution, the supply of sulfuric acid is stopped, with the hydrogen peroxide alone being supplied to the substrate. Then, the supply of the hydrogen peroxide solution is stopped, and the substrate is rinsed with a second process solution. The particular processing makes it possible to prevent the second process solution from reacting with sulfuric acid.

Abstract translation: 用通过将硫酸与过氧化氢溶液混合制备的第一工艺溶液进行衬底处理，然后用第二工艺溶液处理衬底。 在用第一工艺溶液处理衬底之后，停止供应硫酸，单独的过氧化氢被供给衬底。 然后，停止供给过氧化氢溶液，用第二处理液冲洗基板。 特别的处理使得可以防止第二工艺溶液与硫酸反应。

公开(公告)号：US12278120B2

公开(公告)日：2025-04-15

申请号：US17704135

申请日：2022-03-25

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Minami Nakamura ,  Kensuke Demura

IPC: H01L21/67 ,  H01L21/687

Abstract: A substrate treatment device includes a placement platform rotating a substrate, a cooling part supplying a cooling gas to a space between the placement platform and the substrate, a liquid supplier supplying a liquid to a surface of the substrate opposite to the placement platform side, a detector that is above the surface of the substrate and detects a freezing start of the liquid, and a controller controlling the substrate rotation, the cooling gas supply, and the liquid supply. The controller controls at least one of the substrate rotation, the cooling gas flow rate, or the liquid supply rate, and causes the liquid on the substrate surface to reach a supercooled state; and when determining based on a signal from the detector that the freezing of the supercooled liquid has started, the controller starts thawing the frozen liquid after a prescribed interval has elapsed from the freezing start of the liquid.

公开(公告)号：US12257595B2

公开(公告)日：2025-03-25

申请号：US18119401

申请日：2023-03-09

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Masaaki Furuya ,  Hiroaki Kobayashi ,  Hideki Mori

IPC: B05C11/10

Abstract: According to one embodiment, a processing liquid supply device includes a plurality of tanks, a supply path that supplies a processing liquid to a processing device, a heating unit that heats the processing liquid, a dilution unit that dilutes the processing liquid, a new-liquid supply unit that supplies a new liquid, a common flow path through which the processing liquid of the plurality of tanks passes, a switching unit that switches between the plurality of tanks so that at least a tank is selected from which the processing liquid passes to the common flow path, a densitometer provided in the common flow path, and a control device that controls at least one of the heating unit, the dilution unit, and the new-liquid supply unit so that the concentration reaches a target value set in advance.

公开(公告)号：US20240321563A1

公开(公告)日：2024-09-26

申请号：US18612641

申请日：2024-03-21

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Shigeki MATSUNAKA ,  Ivan Petrov GANACHEV ,  Yoji TAKIZAWA ,  Hiroshi OOTSUKA

IPC: H01J37/32 ,  C23C14/06 ,  C23C14/34 ,  C23C14/50 ,  H01J37/34

CPC classification number: H01J37/32834 ,  C23C14/0617 ,  C23C14/34 ,  C23C14/505 ,  H01J37/32715 ,  H01J37/32899 ,  H01J37/3426 ,  H01J2237/20214 ,  H01J2237/332 ,  H01J2237/3387

Abstract: A film forming apparatus includes: a rotary table provided in a chamber; a processing unit configured to perform plasma processing on a workpiece transferred by the rotary table; an inner wall configured to define a processing space and having an opening facing the rotary table; an outer wall configured to cover a periphery of the inner wall with a gap, and configured to form an exhaust space having an opening facing the rotary table; and an exhaust port connected to an exhaust device, wherein the processing unit is a film forming part configured to form a film by sputtering, and wherein both ends of the outer wall are in contact with a side surface of the chamber, and a portion of an outer periphery of the inner wall and the side surface of the chamber are partitioned, so that a reaction gas does not circulate in the exhaust space.

公开(公告)号：US12043898B2

公开(公告)日：2024-07-23

申请号：US17174592

申请日：2021-02-12

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Shohei Tanabe ,  Koji Yoshimura

IPC: C23C14/56 ,  C23C16/44 ,  C23C16/458 ,  H01J37/34 ,  C23C16/455

CPC classification number: C23C16/4584 ,  C23C14/564 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/4586 ,  C23C16/45551 ,  H01J37/3488

Abstract: According to one embodiment, a film formation apparatus and a moisture removing method thereof that can facilitate the removement of moisture in the chamber without the complication of the apparatus are provided. The film formation apparatus according to the present embodiment includes the chamber 10 which an interior thereof can be made vacuum, the exhauster 20 that exhausts the interior of the chamber 10, the carrier 30 that circularly carries the workpiece W by a rotation table 31 provided inside the chamber 10, and the plurality of the plasma processor 40 that performs plasma processing on the workpiece W which is circularly carried, in which the plurality of the plasma processor 40 each has the processing spaces 41 and 42 to perform the plasma processing, at least one of the plurality of the plasma processor 40 is the film formation processor 410 that performs film formation processing by sputtering on the workpiece W which is circularly carried, and at least one of the plurality of the plasma processor 40 is the heater 420 that removes moisture in the chamber 10 by producing plasma and heating the interior of the chamber 10 via the rotation table 31 together with exhaustion by the exhauster 20 and rotation by the rotation table 31 in a condition the film formation process by the film formation processor 410 is not performed.

公开(公告)号：US12005482B2

公开(公告)日：2024-06-11

申请号：US17195924

申请日：2021-03-09

Applicant: Shibaura Mechatronics Corporation

Inventor： Kensuke Demura ,  Daisuke Matsushima ,  Masaya Kamiya

IPC: H01L21/67 ,  B08B3/10 ,  B08B7/00

CPC classification number: B08B7/0092 ,  B08B3/10 ,  H01L21/67051

Abstract: According to one embodiment, q substrate treatment device includes a placement stand, a plurality of support portions, a cooling part, a liquid supplier, and at least one protrusion. The placement stand has a plate shape, and is configured to rotate. The support portions are provided on one surface of the placement stand and configured to support a substrate. The cooling part is configured to supply a cooling gas into a space between the placement stand and a back surface of the substrate supported by the support portions. The liquid supplier is configured to supply a liquid onto a surface of the substrate. At least one protrusion is provided on the one surface of the placement stand and extends along a boundary line of a region where the substrate is provided in a plan view.

公开(公告)号：US11784040B2

公开(公告)日：2023-10-10

申请号：US17181264

申请日：2021-02-22

Applicant: Shibaura Mechatronics Corporation

Inventor： Kensuke Demura ,  Daisuke Matsushima ,  Masaya Kamiya

IPC: H01L21/02 ,  B08B7/00 ,  H01L21/67

CPC classification number: H01L21/02057 ,  B08B7/0092 ,  H01L21/02052 ,  H01L21/67023

Abstract: According to one embodiment, a substrate treatment device includes a placement stand configured to rotate a substrate, a cooling part configured to supply a cooling gas into a space between the placement stand and the substrate, a liquid supplier configured to supply a liquid on a surface of the substrate opposite to the placement stand, and a controller controlling a rotation speed of the substrate, a flow rate of the cooling gas, or a supply amount of the liquid. The controller sets the liquid on the surface of the substrate to be in a supercooled state, forms a frozen film by freezing the liquid in the super cooled state, and causes crack to generate in the frozen film by decreasing a temperature of the frozen film.

公开(公告)号：US20230241636A1

公开(公告)日：2023-08-03

申请号：US18103462

申请日：2023-01-30

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Yoko TAKAKITA

IPC: B05B12/18 ,  B05B9/00 ,  B05B16/40

CPC classification number: B05B12/18 ,  B05B9/002 ,  B05B16/40

Abstract: The substrate processing apparatus includes: a rotating unit that holds and rotates a substrate; a processing liquid supply unit including an ejecting unit that supplies a processing liquid from the ejecting unit to a target surface of the substrate that is being rotated by the rotating unit so as to process the substrate; and the receiving unit 30 including a container having an open top, and relatively movable with respect to the ejecting unit 21 between a block position where the supply of the processing liquid from the ejecting unit 21 is blocked and an allowance position where the supply of the processing liquid from the ejecting unit is allowed.

公开(公告)号：US11609491B2

公开(公告)日：2023-03-21

申请号：US16715044

申请日：2019-12-16

Applicant: Shibaura Mechatronics Corporation

Inventor： Daisuke Matsushima ,  Kensuke Demura ,  Masafumi Suzuki ,  Satoshi Nakamura

IPC: G03F1/24 ,  G03F1/82 ,  B08B7/00

Abstract: A reflective mask cleaning apparatus according to an embodiment comprises a first supply section configured to supply a first solution containing at least one of an organic solvent and a surfactant to a ruthenium-containing capping layer provided in a reflective mask; and a second supply section configured to supply at least one of a reducing solution and an oxygen-free solution to the capping layer.
A reflective mask cleaning apparatus according to an alternative embodiment comprises a third supply section configured to supply a plasma product produced from a reducing gas to a ruthenium-containing capping layer provided in a reflective mask; and a second supply section configured to supply at least one of a reducing solution and an oxygen-free solution to the capping layer.