SURFACE TREATMENT PROCESS PERFORMED ON A TRANSPARENT CONDUCTIVE OXIDE LAYER FOR SOLAR CELL APPLICATIONS
    41.
    发明申请
    SURFACE TREATMENT PROCESS PERFORMED ON A TRANSPARENT CONDUCTIVE OXIDE LAYER FOR SOLAR CELL APPLICATIONS 审中-公开
    用于太阳能电池应用的透明导电氧化层的表面处理工艺

    公开(公告)号:US20120107996A1

    公开(公告)日:2012-05-03

    申请号:US12916526

    申请日:2010-10-30

    Abstract: Embodiments of the invention provide methods of a surface treatment process performing on a transparent conductive oxide layer used in solar cell devices. In one embodiment, a method of performing a surface treatment process includes providing a substrate having a transparent conductive oxide layer disposed thereon in a processing chamber, supplying a gas mixture including an oxygen containing gas into the processing chamber, and performing a surface treatment process using the gas mixture on the surface of the transparent conductive oxide layer.

    Abstract translation: 本发明的实施方案提供了在用于太阳能电池器件的透明导电氧化物层上进行表面处理工艺的方法。 在一个实施例中,执行表面处理工艺的方法包括提供在处理室中设置有透明导电氧化物层的衬底,将包含含氧气体的气体混合物供应到处理室中,并且使用 在透明导电氧化物层的表面上的气体混合物。

    METHOD AND APPARATUS FOR DEPOSITING A SILICON LAYER ON A TRANSMITTING CONDUCTIVE OXIDE LAYER SUITABLE FOR USE IN SOLAR CELL APPLICATIONS
    46.
    发明申请
    METHOD AND APPARATUS FOR DEPOSITING A SILICON LAYER ON A TRANSMITTING CONDUCTIVE OXIDE LAYER SUITABLE FOR USE IN SOLAR CELL APPLICATIONS 审中-公开
    用于在太阳能电池应用中使用的发射导电氧化物层上的硅层沉积的方法和装置

    公开(公告)号:US20080289686A1

    公开(公告)日:2008-11-27

    申请号:US11752794

    申请日:2007-05-23

    CPC classification number: H01L31/1884 H01L31/022466 H01L31/04 Y02E10/50

    Abstract: Methods and apparatus for reducing defects on transmitting conducting oxide (TCO) layer are provided. In one embodiment, a method for depositing a silicon layer on a transmitting conducting oxide (TCO) layer may include providing a substrate having a TCO layer disposed thereon, wherein the TCO layer has a peripheral region and a cell integrated region, the cell integrated region having laser scribing patterns disposed thereon, positioning the substrate on a substrate support assembly disposed in a processing chamber, wherein the substrate support assembly has a roughened surface in contact with the substrate, contacting a shadow frame to the peripheral region of the TCO layer and to the substrate support assembly thereby creating an electrical ground path between the TCO layer and substrate support through the shadow frame, and depositing a silicon containing layer on the TCO layer through an aperture of the shadow frame.

    Abstract translation: 提供了减少传导导电氧化物(TCO)层缺陷的方法和装置。 在一个实施例中,用于在透射导电氧化物(TCO)层上沉积硅层的方法可以包括提供其上设置有TCO层的衬底,其中TCO层具有外围区域和电池集成区域,电池集成区域 其具有设置在其上的激光划线图案,将所述基板定位在设置在处理室中的基板支撑组件上,其中所述基板支撑组件具有与所述基板接触的粗糙表面,将阴影框架接触所述TCO层的周边区域, 衬底支撑组件,从而通过阴影框架在TCO层和衬底支撑件之间形成电接地路径,并且通过阴影框架的孔口在TCO层上沉积含硅层。

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