Abstract:
A computer enclosure includes a computer case and a power supply tray. The computer case includes a side plate and a rear plate adjacent to the side plate. A clamping portion is located on the rear plate, and an opening is defined between the side plate and the rear plate. The power supply tray is attached to the opening and includes a clipping member. The clipping member includes a securing portion extending from the power supply tray and a clipping portion rotatably attached to the securing portion. The clipping portion is engaged with the clamping portion to secure the power supply tray to the computer case, and the clipping portion is rotatable relative to the rear plate to disengage the clipping portion from the clamping portion.
Abstract:
The present invention discloses a pattern matching method, which is used in measurement process for line width measuring machine, comprising: reading a standard pattern used for matching on the at least one predetermined position of a measured sample; respectively comparing each standard pattern of the measured sample with prestored multiple designed original images corresponding to the standard pattern; determining that the pattern matching is successful if the standard pattern on the measured sample successfully compares with at least one designed original image, and proceeding with the subsequent line width measurement process; otherwise, determining that the pattern matching is failed. The present invention also discloses a corresponding pattern matching method and a line width measuring machine. According to the embodiment of the present invention, it can improve the accuracy and the success rate of the pattern matching when measuring the line width.
Abstract:
A programmable metallization device comprises a first electrode and a second electrode, and a dielectric layer, a conductive ion-barrier layer, and an ion-supplying layer in series between the first and second electrodes. In operation, a conductive bridge is formed or destructed in the dielectric layer to represent a data value using bias voltages having the same polarity, enabling the use of diode access devices. To form a conductive bridge, a bias is applied that is high enough to cause ions to penetrate the conductive ion-barrier layer into the dielectric layer, which then form filaments or bridges. To destruct the conductive bridge, a bias of the same polarity is applied that causes current to flow through the structure, while ion flow is blocked by the conductive ion-barrier layer. As a result of Joule heating, any bridge in the dielectric layer disintegrates.
Abstract:
A method for fabricating a compound semiconductor epitaxial structure includes the following steps. Firstly, a first compound epitaxial layer is formed on a substrate. Then, a continuous epitaxial deposition process is performed to form a second compound epitaxial layer on the first compound epitaxial layer, so that the second compound epitaxial layer has a linearly-decreased concentration gradient of metal. Afterwards, a semiconductor material layer is formed on the second compound epitaxial layer.
Abstract:
According to an embodiment of the invention, a chip package is provided. The chip package includes: a substrate having an upper surface and a lower surface; a plurality of conducting pads located under the lower surface of the substrate; a dielectric layer located between the conducting pads; a trench extending from the upper surface towards the lower surface of the substrate; a hole extending from a bottom of the trench towards the lower surface of the substrate, wherein a sidewall of the hole is substantially perpendicular to the lower surface of the substrate, and the sidewall or a bottom of the hole exposes a portion of the conducting pads; and a conducting layer located in the hole and electrically connected to at least one of the conducting pads.
Abstract:
A method comprises selecting a region from a layout pattern of an integrated circuit, wherein the region comprises a plurality of functional units, and wherein the functional units are not coupled to each other through a variety of connection components, identifying hot spots in the region using a first threshold and inserting a plurality of decoupling capacitors adjacent to the hot spots.
Abstract:
A testing apparatus includes a retaining panel, a screw pole, two securing panels moveably attached to the screw pole, and two mounting members. Each of the two securing panels is slidably attached to the retaining panel. Each of the two mounting member is engaged with each of the two securing panels. The two securing panels are moveable relative to the screw pole for sandwiching an electronic device, and each of the two mounting member is engaged with the screw pole, for prevent the two securing panels from disengaged from the electronic device.
Abstract:
Transistors, methods of manufacturing thereof, and image sensor circuits are disclosed. In one embodiment, a transistor includes a buried channel disposed in a workpiece, a gate dielectric disposed over the buried channel, and a gate layer disposed over the gate dielectric. The gate layer comprises an I shape in a top view of the transistor.
Abstract:
A line-width measurement device and a measurement method using the same are disclosed. The line-width measurement device has a platform, an image capturing device and a color-mixing light source device. The image capturing device captures an image of a pattern under measurement in a measurement area of the platform. The color-mixing light source device correspondingly provides illumination to the measurement area. The color-mixing light source device has a plurality of monochromatic light sources and adjusts the brightness scale of each monochromatic light source according to the matching rate of the pattern under measurement and a standard pattern to provide suitable color-mixed lights for illumination. Therefore, the present invention can provide a better measurement environment to further enhance accuracy of line-width measurement.
Abstract:
An embodiment of the invention provides a chip package, which includes: a semiconductor substrate having a device region and a non-device region neighboring the device region; a package layer disposed on the semiconductor substrate; a spacing layer disposed between the semiconductor substrate and the package layer and surrounding the device region and the non-device region; a ring structure disposed between the semiconductor substrate and the package layer, and between the spacing layer and the device region, and surrounding a portion of the non-device region; and an auxiliary pattern including a hollow pattern formed in the spacing layer or the ring structure, a material pattern located between the spacing layer and the device region, or combinations thereof.