公开(公告)号：US20190019874A1

公开(公告)日：2019-01-17

申请号：US16033880

申请日：2018-07-12

Applicant: Applied Materials, Inc.

Inventor： Paul F. Ma ,  Seshadri Ganguli ,  Shih Chung Chen ,  Rajesh Sathiyanarayanan ,  Atashi Basu ,  Lin Dong ,  Naomi Yoshida ,  Sang Ho Yu ,  Liqi Wu

IPC: H01L29/51 ,  H01L29/49 ,  H01L21/28

Abstract: Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.

公开(公告)号：US20180350826A1

公开(公告)日：2018-12-06

申请号：US15995693

申请日：2018-06-01

Applicant: Applied Materials, Inc.

Inventor： Jacqueline S. Wrench ,  Jing Zhou ,  Fuqun Grace Vasiknanonte ,  Jiang Lu ,  Paul F. Ma ,  Nobuyuki Sasaki ,  Sree Rangasai V. Kesapragada ,  Sang Ho Yu ,  Mei Chang

IPC: H01L27/11551 ,  H01L27/11578 ,  H01L21/822 ,  H01L21/8229 ,  H01L21/8239 ,  H01L21/285

Abstract: Embodiments of the invention provide methods of processing a substrate having a stack of spaced oxide layers with gaps between the oxide layers. A metallic nucleation layer is formed in the gaps and a cobalt film is deposited on the nucleation layer to form wordlines.

公开(公告)号：US10094023B2

公开(公告)日：2018-10-09

申请号：US14815156

申请日：2015-07-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Sang Ho Yu ,  Mei Chang

IPC: H01L21/00 ,  C23C16/46 ,  C23C16/458 ,  C23C16/18 ,  C23C16/56 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

Abstract: Methods and apparatus for depositing a cobalt layer in features formed on a substrate are provided herein. In some embodiments, a method of depositing a cobalt layer atop a substrate includes: (a) providing a substrate to a substrate support that is rotatable between two processing positions; (b) exposing the substrate to a cobalt containing precursor at a first processing position to deposit a cobalt layer atop the substrate; (c) rotating the substrate having the deposited cobalt layer to a second processing position; and (d) treating the substrate at the second processing position to remove contaminants from the cobalt layer.

公开(公告)号：US20180144973A1

公开(公告)日：2018-05-24

申请号：US15800784

申请日：2017-11-01

Applicant: Applied Materials, Inc.

Inventor： Weifeng Ye ,  Jiang Lu ,  Feng Chen ,  Zhiyuan Wu ,  Kai Wu ,  Vikash Banthia ,  He Ren ,  Sang Ho Yu ,  Mei Chang ,  Feiyue Ma ,  Yu Lei ,  Keyvan Kashefizadeh ,  Kevin Moraes ,  Paul F. Ma ,  Hua Ai

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/7685 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/53238

Abstract: Methods to selectively deposit capping layers on a copper surface relative to a dielectric surface comprising separately the copper surface to a cobalt precursor gas and a tungsten precursor gas, each in a separate processing chamber. The copper surface and the dielectric surfaces can be substantially coplanar. The combined thickness of cobalt and tungsten capping films is in the range of about 2 Å to about 60 Å.

公开(公告)号：US09953926B2

公开(公告)日：2018-04-24

申请号：US14592170

申请日：2015-01-08

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Paul F. Ma ,  Jiang Lu ,  Ben-Li Sheu

IPC: H01L21/4763 ,  H01L21/44 ,  H01L23/532 ,  H01L21/768 ,  H01L21/285 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L23/53238 ,  C23C16/34 ,  C23C16/45536 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising CoMn(N) and, optionally, an adhesion layer.

公开(公告)号：US09653352B2

公开(公告)日：2017-05-16

申请号：US14300773

申请日：2014-06-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Liqi Wu ,  Sang Ho Yu ,  Kazuya Daito ,  Kie Jin Park ,  Kai Wu ,  David Thompson

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/04 ,  C23C16/06 ,  C23C16/455

CPC classification number: H01L21/76877 ,  C23C16/045 ,  C23C16/06 ,  C23C16/45536 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876

Abstract: Methods for forming metal organic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during formation of the tungsten barrier layer is less than about 225 degrees Celsius; and depositing a tungsten fill layer over the tungsten barrier layer to fill the feature to the first surface.

公开(公告)号：US20150194384A1

公开(公告)日：2015-07-09

申请号：US14592170

申请日：2015-01-08

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Paul F. Ma ,  Jiang Lu ,  Ben-Li Sheu

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53238 ,  C23C16/34 ,  C23C16/45536 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising CoMn(N) and, optionally, an adhesion layer.

Abstract translation: 描述了制造具有包含钴和氮化锰的阻挡层的半导体器件的半导体器件和方法。 还描述了与包括CoMn（N）和任选的粘合层的阻挡层相同的半导体器件和方法。

公开(公告)号：US11680313B2

公开(公告)日：2023-06-20

申请号：US16866974

申请日：2020-05-05

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Lu Chen ,  Seshadri Ganguli

IPC: C23C16/00 ,  C23C16/04 ,  C23C16/455 ,  C23C16/40 ,  H01L21/768 ,  C23C16/34 ,  C23C16/56

CPC classification number: C23C16/04 ,  C23C16/042 ,  C23C16/34 ,  C23C16/403 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76879

Abstract: Methods for selectively depositing on non-metallic surfaces are disclosed. Some embodiments of the disclosure utilize an unsaturated hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked non-metallic surfaces. Some embodiments of the disclosure relate to methods of forming metallic vias with decreased resistance.

公开(公告)号：US20220122923A1

公开(公告)日：2022-04-21

申请号：US17072806

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： Lu Chen ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Chen

IPC: H01L23/532

Abstract: Embodiments of the disclosure relate to methods and materials for forming barrier layers with enhanced barrier performance and/or reduced via resistance. Some embodiments of the disclosure provide methods for passivating a metal surface by exposing the metal surface to a metal complex comprising an organic ligand with at least three carbon atoms and a double or triple bond that eta bonds with a central metal atom. Some embodiments provide barrier layers within vias which enable a reduction in resistance of at least 25% as a result of thinner barrier layers with equivalent barrier properties.

公开(公告)号：US11286556B2

公开(公告)日：2022-03-29

申请号：US16848113

申请日：2020-04-14

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Wei Lei ,  Sang Ho Yu

IPC: C23C16/18 ,  C23C16/505 ,  C23C16/455 ,  C23C16/04 ,  H01L21/768 ,  C23C16/34 ,  H01L21/285 ,  H01L21/3205

Abstract: Methods for selectively depositing on surfaces are disclosed. Some embodiments of the disclosure utilize an organometallic precursor that is substantially free of halogen and substantially free of oxygen. Deposition is performed to selectively deposit a metal film on a non-metallic surface over a metallic surface. Some embodiments of the disclosure relate to methods of gap filling.