公开(公告)号：US20220359161A1

公开(公告)日：2022-11-10

申请号：US17314173

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Krishna Kumar KUTTANNAIR ,  Jie YU ,  Kartik RAMASWAMY ,  Yang YANG

IPC: H01J37/32 ,  H03H7/40

Abstract: Methods and apparatus using a matching network for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises a local controller connectable to a system controller of the plasma processing chamber, a first motorized capacitor connected to the local controller, a second motorized capacitor connected to the first motorized capacitor, a first sensor at an input of the matching network and a second sensor at an output of the matching network for obtaining in-line RF voltage, current, phase, harmonics, and impedance data, respectively, and an Ethernet for Control Automation Technology (EtherCAT) communication interface connecting the local controller to the first motorized capacitor, the second motorized capacitor, the first sensor, and the second sensor.

公开(公告)号：US20200321186A1

公开(公告)日：2020-10-08

申请号：US16373254

申请日：2019-04-02

Applicant: Applied Materials, Inc.

Inventor： John M. WHITE ,  Yang YANG ,  Kartik RAMASWAMY ,  Manivannan THOTHADRI ,  Yue GUO

IPC: H01J37/063 ,  H01J37/077 ,  H01J37/32

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching. In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. The electrode has an electron emitting surface disposed at a nonparallel angle relative to a major axis of a substrate assembly. The EBRPE apparatus may further comprise a capacitive or inductive coupled plasma generator. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce directional etching of the substrate. During the EBPRE process, the substrate or electrode is actuated through a process volume during the etching.

公开(公告)号：US20180358222A1

公开(公告)日：2018-12-13

申请号：US15979842

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Samuel E. GOTTHEIM ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOZHIZAWA ,  Abhijit Basu MALLICK ,  Srinivas GANDIKOTA

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/683 ,  H01J37/32 ,  C23C16/27 ,  C23C16/505 ,  C23C16/56 ,  G03F7/20

CPC classification number: H01L21/02115 ,  C23C16/272 ,  C23C16/505 ,  C23C16/56 ,  G03F7/70033 ,  H01J37/32082 ,  H01J37/32715 ,  H01J2237/3321 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/6831 ,  H01L27/11551 ,  H01L27/11578

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of high-density films for patterning applications. In one implementation, a method of processing a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.5 mTorr and about 10 Torr. The method further includes generating a plasma at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film has a density greater than 1.8 g/cc and a stress less than −500 MPa.

公开(公告)号：US20160322242A1

公开(公告)日：2016-11-03

申请号：US15144736

申请日：2016-05-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew NGUYEN ,  Yang YANG ,  Kartik RAMASWAMY ,  Steven LANE ,  Lawrence WONG

IPC: H01L21/67 ,  C23C16/505 ,  H01L21/683 ,  H01J37/32

CPC classification number: C23C16/505 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/32715 ,  H01L21/68742 ,  H01L21/68785

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber and having a support surface to support a substrate; an inductive coil disposed above the dielectric lid to inductively couple RF energy into the internal processing volume to form a plasma above the substrate support; and a first inductive applicator ring coupled to a lift mechanism to position the first inductive applicator ring within the internal processing volume.

Abstract translation: 本文提供了用于处理衬底的方法和设备。 在一些实施例中，用于处理衬底的设备包括具有设置在处理室的电介质盖下方的内部处理容积的处理室; 设置在所述处理室中并具有用于支撑衬底的支撑表面的衬底支撑件; 感应线圈，设置在所述电介质盖的上方，以将RF能量感应地耦合到所述内部处理容积中以在所述衬底支撑件上方形成等离子体; 以及耦合到提升机构以将所述第一感应敷料器环定位在所述内部处理容积内的第一感应式施加器环。

公开(公告)号：US20250006465A1

公开(公告)日：2025-01-02

申请号：US18214745

申请日：2023-06-27

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Fernando SILVEIRA ,  Imad YOUSIF

IPC: H01J37/32

Abstract: Methods and apparatus for a point of use remote plasma source are provided. In embodiments, a remote plasma apparatus includes: an enclosure surrounding a cavity; a first conductor surrounding a first portion of the enclosure; a second conductor surrounding a second portion of the enclosure, wherein the first portion of the enclosure and the second portion of the enclosure overlap by an overlap amount, and wherein each of the first conductor and the second conductor are circumferentially discontinuous; a dielectric layer disposed between and separating the first conductor and the second conductor; a gas inlet configured to flow a gas into the cavity; and a gas outlet disposed in a bottom of the enclosure and configured to flow the gas out of the cavity.

公开(公告)号：US20240412947A1

公开(公告)日：2024-12-12

申请号：US18207526

申请日：2023-06-08

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  A N M Wasekul AZAD ,  Kartik RAMASWAMY ,  Nicolas J. BRIGHT ,  Yang YANG

IPC: H01J37/32

Abstract: Some embodiments are directed to a tuning circuit. The tuning circuit generally includes: a first impedance coupled between a first terminal and a second terminal of the tuning circuit, wherein the first terminal is coupled to a generator and the second terminal is coupled to a load; a second impedance coupled between the first impedance of the tuning circuit and a reference potential node; and a signal path coupled to the first impedance or the second impedance, the signal path comprising an inductive element and a first switch coupled to the inductive element, wherein a control input of the first switch is coupled to a control input of the tuning circuit configured to receive a control signal associated with a pulsed voltage (PV) waveform.

公开(公告)号：US20240249915A1

公开(公告)日：2024-07-25

申请号：US18628009

申请日：2024-04-05

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Yue GUO ,  Kartik RAMASWAMY

IPC: H01J37/32 ,  H03H7/01

CPC classification number: H01J37/32146 ,  H03H7/0115 ,  H01J2237/327

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source selectively coupled to an output node, where the output node is configured to be coupled to an electrode disposed within a processing chamber, and where the output node is selectively coupled to a ground node. The waveform generator may also include a radio frequency (RF) signal generator, and a first filter coupled between the RF signal generator and the output node.

公开(公告)号：US20240094273A1

公开(公告)日：2024-03-21

申请号：US17947675

申请日：2022-09-19

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  Jie YU ,  Yang YANG

IPC: G01R29/08 ,  H01J37/32

CPC classification number: G01R29/0871 ,  H01J37/32183 ,  H01J37/32917 ,  H01J2237/24592

Abstract: A wideband variable impedance load for high volume manufacturing qualification and diagnostic testing of a radio frequency power source, an impedance matching network and RF sensors for generating plasma in a semiconductor plasma chamber for semiconductor fabrication processes. The wideband variable impedance load may comprise a fixed value resistance operable at a plurality of frequencies and coupled with a variable impedance network capable of transforming the fixed value resistance into a wide range of complex impedances at the plurality of frequencies. Response times and match tuning element position repeatability may be verified. Automatic testing, verification and qualification of production and field installed radio frequency power sources for plasma generation are easily performed.

公开(公告)号：US20240079212A1

公开(公告)日：2024-03-07

申请号：US17930139

申请日：2022-09-07

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  Nicolas J. BRIGHT ,  Yang YANG ,  A N M Wasekul AZAD

IPC: H01J37/32 ,  G01R27/02 ,  H01L21/66

CPC classification number: H01J37/32183 ,  G01R27/02 ,  H01L22/20 ,  H01J2237/3341

Abstract: Embodiments of the disclosure include a method of processing a substrate in a plasma processing system, comprising delivering an RF signal, by an RF generator, through an RF match to an electrode assembly disposed within the plasma processing system, wherein while delivering the RF signal the RF match is set to a first matching point, and delivering a voltage waveform, by a waveform generator, to the electrode assembly disposed within the plasma processing system while the RF signal is delivered to the electrode assembly. The method includes receiving, by the RF match, a synchronization signal from a RF generator or the waveform generator, measuring, by an output sensor of the RF match, a first set of impedance related data of the plasma processing system over a first time period, the first time period beginning after a first delay triggered by a first portion of a first waveform pulse of the synchronization signal, measuring, by the output sensor of the RF match, a second set of impedance related data of the plasma processing system over a second time period, the second time period beginning after a second delay triggered by the first portion of the first waveform pulse of the synchronization signal, calculating, by the RF match, a combined impedance parameter based on the measured first set of impedance related data and the measured second set of impedance related data, and adjusting a matching parameter within the RF match based on the calculated combined impedance parameter to achieve a second matching point.

公开(公告)号：US20230170192A1

公开(公告)日：2023-06-01

申请号：US17537314

申请日：2021-11-29

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  Yang YANG

IPC: H01J37/32 ,  H01J37/244 ,  H01L21/683 ,  G01R29/12

CPC classification number: H01J37/32935 ,  H01J37/32715 ,  H01J37/244 ,  H01J37/32697 ,  H01L21/6831 ,  G01R29/12

Abstract: Embodiments of the present disclosure generally include an apparatus and methods for measuring and controlling in real-time a potential formed on a substrate in a plasma processing chamber during plasma processing. Embodiments of the disclosure include a plasma processing system that includes a substrate support disposed within a processing volume of the plasma processing system, the substrate support comprising a substrate supporting surface and a dielectric layer disposed between a first electrode and the substrate supporting surface. The plasma processing system further includes a first generator coupled to a second electrode of the plasma processing system, and a sensor disposed a first distance from the substrate supporting surface. The first generator is configured to generate a plasma within the processing volume. The first electrode is disposed a second distance from the substrate supporting surface, and the first distance is less than the second distance. The sensor is generally configured to detect an electric field strength and/or a voltage formed on the substrate during plasma processing.