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公开(公告)号：US08414790B2
公开(公告)日：2013-04-09
申请号：US12774712
申请日：2010-05-05
申请人： Andrew D. Bailey, III , Yunsang Kim
发明人： Andrew D. Bailey, III , Yunsang Kim
IPC分类号： C03C15/00
CPC分类号： C23G1/24 , C23G1/103 , C23G5/00 , H01L21/02087 , H01L21/0209 , H01L21/321 , H01L21/32134 , H01L21/32136 , H01L21/6708
摘要： The various embodiments described in the specification provide improved mechanisms of removal of unwanted deposits on the bevel edge to improve process yield. The embodiments provide apparatus and methods of treating the bevel edge of a copper plated substrate to convert the copper at the bevel edge to a copper compound that can be wet etched with a fluid at a high etch selectivity in comparison to copper. In one embodiment, the wet etch of the copper compound at high selectivity to copper allows the removal of the non-volatile copper at substrate bevel edge in a wet etch processing chamber. The plasma treatment at bevel edge allows the copper at bevel edge to be removed at precise spatial control to about 2 mm or below, such as about 1 mm, about 0.5 mm or about 0.25 mm, to the very edge of substrate. In addition, the apparatus and methods described above for bevel edge copper removal do not have the problems of copper etching fluid being splashed on the device regions to cause defects and thinning of copper films. Therefore, device yield can be greatly improved.
摘要翻译： 在说明书中描述的各种实施例提供了改进的机理，去除斜边上的不需要的沉积物以提高工艺产量。 实施例提供了处理镀铜衬底的斜边缘以将斜面边缘处的铜转化为铜化合物的设备和方法，铜化合物可以与铜相比以高蚀刻选择性用流体进行湿蚀刻。 在一个实施方案中，铜化合物对铜的高选择性的湿法蚀刻允许在湿蚀刻处理室中在衬底斜面边缘处去除非挥发性铜。 在斜边缘处的等离子体处理允许在精确空间控制下将斜角边缘处的铜去除至基板的最外边缘约2mm或更小，例如约1mm，约0.5mm或约0.25mm。 此外，上述用于斜边铜剥离的装置和方法不存在铜蚀刻流体溅射在器件区域上以引起铜膜缺陷和变薄的问题。 因此，可以大大提高器件产量。
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公开(公告)号：US08349202B2
公开(公告)日：2013-01-08
申请号：US13300483
申请日：2011-11-18
IPC分类号： C23F1/00
CPC分类号： H01J37/32449 , H01J37/32091 , H01J2237/3341 , H01L21/02087
摘要： Methods for bevel edge etching are provided. One example method is for etching a film on a bevel edge of a substrate in a plasma etching chamber. The method includes providing the substrate on a substrate support in the plasma etching chamber. The plasma etching chamber has a top edge electrode and a bottom edge electrode disposed to surround the substrate support. Then flowing an etching process gas through a plurality of edge gas feeds disposed along a periphery of the gas delivery plate. The periphery of the gas deliver plate is oriented above the substrate support and the bevel edge of the substrate, and the flowing is further directed to a space between the top edge electrode and bottom edge electrode. And, flowing a tuning gas through a center gas feed of the gas delivery plate.
摘要翻译： 提供斜边蚀刻方法。 一种示例性方法是在等离子体蚀刻室中蚀刻衬底的斜边缘上的膜。 该方法包括将基板设置在等离子体蚀刻室中的基板支撑件上。 等离子体蚀刻室具有顶部边缘电极和设置成围绕基板支撑件的底部边缘电极。 然后使蚀刻处理气体流过沿着气体输送板的周边布置的多个边缘气体进料。 气体输送板的周边定位在基板支撑件和基板的斜边缘上方，并且流动进一步被引导到顶部边缘电极和底部边缘电极之间的空间。 并且，使调谐气体流过气体输送板的中心气体进料。
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43.发明申请GAS MODULATION TO CONTROL EDGE EXCLUSION IN A BEVEL EDGE ETCHING PLASMA CHAMBER 有权气体调节控制边缘蚀刻等离子体室的边缘排除公开(公告)号：US20110253312A9
公开(公告)日：2011-10-20
申请号：US12021177
申请日：2008-01-28
IPC分类号： B44C1/22 , H01L21/3065
CPC分类号： H01J37/32449 , H01J37/32091 , H01J2237/3341 , H01L21/02087
摘要： The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.
摘要翻译： 各种实施例提供了在基板的斜边缘附近去除不需要的沉积物以提高工艺产量的装置和方法。 这些实施例提供了具有中心和边缘气体进料作为附加过程旋钮的设备和方法，用于选择最合适的斜面边缘蚀刻工艺，以将边缘排除区域进一步朝向衬底边缘向外推动。 此外，实施例提供了具有调节气体以改变斜面边缘处的蚀刻轮廓的装置和方法，并且使用中心和边缘气体进料的组合来流动过程并将气体调谐到腔室中。 调节气体的使用和气体进料的位置都影响斜边处的蚀刻特性。 总气体流量，气体输送板和基底表面之间的间隙距离，压力和工艺气体的类型也被发现影响斜面边缘蚀刻轮廓。
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公开(公告)号：US20110214687A1
公开(公告)日：2011-09-08
申请号：US13081264
申请日：2011-04-06
CPC分类号： H01L21/0209 , H01J37/32366 , H01J37/32568 , H01J2237/335 , H01L21/67069
摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.
摘要翻译： 一种用于清洁半导体衬底的斜边缘的装置。 该装置包括：具有圆柱形顶部的下支撑件; 围绕顶部部分的外边缘并适于支撑基底的较低等离子体排除区（PEZ）环; 与所述下支撑件相对并且具有圆柱形底部部分的上介电部件; 围绕底部的外边缘并与下部PEZ环相对的上部PEZ环; 以及至少一个射频（RF）电源，其用于在由所述上和下PEZ环限定的环形空间中将工艺气体激发成等离子体，其中所述环形空间包围所述斜面边缘。
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公开(公告)号：US20110180212A1
公开(公告)日：2011-07-28
申请号：US13082393
申请日：2011-04-07
申请人： Andrew D. Bailey, III , Yunsang Kim
发明人： Andrew D. Bailey, III , Yunsang Kim
IPC分类号： H01L21/3065
CPC分类号： H01J37/32385 , H01J37/321 , H01J37/32366 , H01J37/32706 , H01L21/02087 , H01L21/67069 , H01L21/6715
摘要： Chambers for processing a bevel edge of a substrate are provided. One such chamber includes a bottom electrode defined to support a substrate in the chamber. The bottom electrode has a bottom first level for supporting the substrate and a bottom second level near an outer edge of bottom electrode. The bottom second level is defined at a step below the bottom first level. Further included is a top electrode oriented above the bottom electrode. The top electrode having a top first level and a top second level, where the top first level is opposite the bottom first level and the top second level is opposite the bottom second level. The top second level is defined at a step above the top first level. A bottom ring mount oriented at the bottom second level is included. The bottom ring mount includes a first adjuster for moving a bottom permanent magnet toward and away from the top electrode. Further included is a top ring mount oriented at the top second level. The top ring mount includes a second adjuster for moving a top permanent magnet toward and away from the bottom electrode.
摘要翻译： 提供了用于处理基板的斜边缘的室。 一个这样的室包括限定为支撑室中的衬底的底部电极。 底部电极具有用于支撑衬底的底部第一电平和底部电极的外部边缘附近的底部第二电平。 底部第二级别定义在底层第一级以下的一级。 还包括位于底部电极上方的顶部电极。 顶部电极具有顶部第一电平和顶部第二电平，其中顶部第一电平与底部第一电平相反，而顶部第二电平与底部第二电平相反。 顶级的第二级是在顶级第一级以上的一级定义的。 包括位于底部第二级的底环安装座。 底环安装件包括用于使底部永磁体朝向和远离顶部电极移动的第一调节器。 另外还包括一个位于顶部第二层的顶环安装座。 顶环安装件包括用于使顶部永磁体朝向和远离底部电极移动的第二调节器。
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公开(公告)号：US20090170334A1
公开(公告)日：2009-07-02
申请号：US12341384
申请日：2008-12-22
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32366 , H01L21/02068 , H01L21/02087 , H01L21/32136 , H01L21/6708
摘要： A method of bevel edge etching a semiconductor substrate having exposed copper surfaces with a fluorine-containing plasma in a bevel etcher in which the semiconductor substrate is supported on a semiconductor substrate support comprises bevel edge etching the semiconductor substrate with the fluorine-containing plasma in the bevel etcher; evacuating the bevel etcher after the bevel edge etching is completed; flowing defluorinating gas into the bevel etcher; energizing the defluorinating gas into a defluorination plasma at a periphery of the semiconductor substrate; and processing the semiconductor substrate with the defluorination plasma under conditions to prevent discoloration of the exposed copper surfaces of the semiconductor substrate upon exposure, the discoloration occurring upon prolonged exposure to air.
摘要翻译： 在半导体衬底支撑在半导体衬底支撑体上的斜面蚀刻器中，使用具有含氟等离子体的具有暴露的铜表面的半导体衬底进行斜边蚀刻的方法包括：在半导体衬底支撑体中的含氟等离子体 斜角蚀刻机 在斜边蚀刻完成之后排空斜面蚀刻机; 将脱氟气体流入斜面蚀刻机; 在所述半导体衬底的外围将所述脱氟气体通电为脱氟等离子体; 并且在曝光时防止半导体衬底的暴露的铜表面的变色的条件下，用脱氟等离子体处理半导体衬底，在长时间暴露于空气时发生变色。
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公开(公告)号：US07540935B2
公开(公告)日：2009-06-02
申请号：US11076725
申请日：2005-03-09
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/32136 , H01L21/31683 , H01L21/321 , H01L21/32115 , H01L21/32135 , H01L21/32138 , H01L21/32139 , H01L21/7684 , H01L21/76865 , H01L21/76885
摘要： A method of etching a conductive layer includes converting at least a portion of the conductive layer and etching the conductive layer to substantially remove the converted portion of the conductive layer and thereby expose a remaining surface. The remaining surface has an average surface roughness of less than about 10 nm. A system for etching a conductive layer is also disclosed.
摘要翻译： 蚀刻导电层的方法包括转换导电层的至少一部分并蚀刻导电层，以基本上去除导电层的转换部分，从而暴露出剩余的表面。 剩余的表面具有小于约10nm的平均表面粗糙度。 还公开了用于蚀刻导电层的系统。
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公开(公告)号：US07227244B2
公开(公告)日：2007-06-05
申请号：US10924551
申请日：2004-08-24
申请人： Claes H. Bjorkman , Melissa Min Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
发明人： Claes H. Bjorkman , Melissa Min Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
IPC分类号： H01L23/58
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31138 , H01L21/3121 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76829
摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.
摘要翻译： 沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。 电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。 具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。 用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。
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公开(公告)号：US06340435B1
公开(公告)日：2002-01-22
申请号：US09329012
申请日：1999-06-09
申请人： Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
发明人： Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
IPC分类号： C23F100
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31138 , H01L21/3121 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76829
摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.
摘要翻译： 沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。 电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。 具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。 用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。
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公开(公告)号：US09184043B2
公开(公告)日：2015-11-10
申请号：US11758584
申请日：2007-06-05
IPC分类号： H01J37/32 , H01L21/00 , H01L21/311 , H01L21/3213 , H01L21/02
CPC分类号： H01L21/02087 , H01J37/32009 , H01J37/32082 , H01J37/32559 , H01J37/32642 , H01J37/32862 , H01L21/02057 , H01L21/31116 , H01L21/31138 , H01L21/32136
摘要： The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded. A surface of the top edge electrode facing the substrate is covered by a top thin dielectric layer. The top edge electrode and the bottom edge electrode oppose one another and are configured to generate a cleaning plasma to clean the bevel edge of the substrate.
摘要翻译： 这些实施例提供用于去除蚀刻副产物，电介质膜和金属膜附近的衬底斜面边缘的设备和方法，以及室内，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。 在示例性实施例中，提供了构造成清洁基板的斜边缘的等离子体处理室。 等离子体处理室包括被配置为接收衬底的衬底支撑件。 等离子体处理室还包括围绕衬底支撑件的底部边缘电极。 底部边缘电极和基底支撑件通过底部介电环彼此电隔离。 面向基板的底部边缘电极的表面被底部薄的电介质层覆盖。 等离子体处理室还包括围绕与衬底支撑件相对的顶部绝缘体板的顶部边缘电极。 顶边电极电接地。 面向衬底的顶边电极的表面被顶部薄介电层覆盖。 顶边电极和下边缘电极彼此相对并且被配置为产生清洁等离子体以清洁衬底的斜边缘。
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