Silver halide photosensitive material
    41.
    发明授权
    Silver halide photosensitive material 失效
    卤化银感光材料

    公开(公告)号:US06686140B2

    公开(公告)日:2004-02-03

    申请号:US10383771

    申请日:2003-03-10

    IPC分类号: G03C108

    摘要: A silver halide photosensitive material comprises at least one light sensitive silver halide emulsion layer on a support. The silver halide photosensitive material contains at least one compound capable of undergoing a one-electron oxidation to thereby form a one-electron oxidation product thereof, the one-electron oxidation product being capable of releasing further one or more electrons, and at least one reducing compound having a C/H value of 3 or less; and another reducing compound having a C/H value of more than 3, the C/H value representing a ratio of (the number of Group IV elements)/(the sum of Groups III, V, VI and VII elements).

    摘要翻译: 卤化银感光材料在载体上包含至少一种感光卤化银乳剂层。 卤化银感光材料含有至少一种能够进行单电子氧化从而形成单电子氧化产物的化合物,该单电子氧化产物能够进一步释放一个或多个电子,并且至少一个还原 C / H值为3以下的化合物; 和C / H值大于3的另一种还原化合物,C / H值表示(IV族元素的数量)/(III,V,VI和VII族元素的总和)的比率。

    1H-pyrrolo-[1,2-b][1,2,4,]triazole compound and its synthetic intermediate, and method of preparing a 1H-1,2,4-triazole-5-yl-acetic acid ester compound
    43.
    发明授权
    1H-pyrrolo-[1,2-b][1,2,4,]triazole compound and its synthetic intermediate, and method of preparing a 1H-1,2,4-triazole-5-yl-acetic acid ester compound 失效
    1H-吡咯并[1,2-b] [1,2,4]三唑化合物及其合成中间体,以及制备1H-1,2,4-三唑-5-基 - 乙酸酯化合物

    公开(公告)号:US06384219B1

    公开(公告)日:2002-05-07

    申请号:US09003881

    申请日:1998-01-07

    IPC分类号: C07D48704

    摘要: There is disclosed a 1H-pyrrolo-[1,2-b][1,2,4]triazole compound represented by formula (I): wherein R is an alkyl group; R1, R2, R3, R1′, R2′, and R3′ each are a hydrogen atom or an alkyl group; R1 and R2, and R1′ and R2′ may bond together to form a ring, respectively; R4 is a hydrogen atom or an alkyl group, and X is heterocyclic group, a substituted amino group, or an aryl group. The compound is useful as a photographic cyan coupler. There is also disclosed synthetic intermediates of the compound and a production method of the intermediates.

    摘要翻译: 公开了由式(I)表示的1H-吡咯并[1,2-b] [1,2,4]三唑化合物:其中R是烷基; R1,R2,R3,R1',R2'和R3'各自为氢原子或烷基; R 1和R 2,并且R 1'和R 2'可以分别键合在一起形成环; R4是氢原子或烷基,X是杂环基,取代氨基或芳基。 该化合物可用作照相青色成色剂。 还公开了该化合物的合成中间体和中间体的制备方法。

    Method of evaluating a semiconductor wafer
    50.
    发明授权
    Method of evaluating a semiconductor wafer 失效
    评估半导体晶片的方法

    公开(公告)号:US5897327A

    公开(公告)日:1999-04-27

    申请号:US14084

    申请日:1998-01-27

    IPC分类号: G01N27/00 H01L21/66 G01R31/26

    CPC分类号: H01L22/12

    摘要: A MOS capacitor in which an insulating layer of thermal oxide film is disposed between the electrode 2 and the silicon wafer 1 is formed. While a light beam of an energy larger than 1.1 eV is irradiated on the electrode 2 and its periphery, electrons inject from the electrode 2 side (voltage is applied from the silicon wafer 1 side). The injected electrons are activated by the light irradiation. For both p-type or n-type semiconductor, the dielectric breakdown electric field strength can be precisely measured according to the degree of processing defects. The evaluation method is particularly effective for the n-type semiconductor wafer, which was difficult to evaluate by the prior art.

    摘要翻译: 形成在电极2和硅晶片1之间配置有热氧化膜绝缘层的MOS电容器。 虽然能量大于1.1eV的光束照射在电极2及其周围,但电子从电极2侧注入电压(从硅晶片1侧施加电压)。 注入的电子被光照射激活。 对于p型或n型半导体,可以根据加工缺陷的程度精确地测量绝缘击穿电场强度。 该评价方法对于现有技术难以评价的n型半导体晶片特别有效。