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    Magnetoresistance effect element having improved biasing films, and magnetic head and magnetic recording device using the same
    42.
    发明授权
    Magnetoresistance effect element having improved biasing films, and magnetic head and magnetic recording device using the same 失效
    具有改进的偏置膜的磁阻效应元件以及使用其的磁头和磁记录装置

    公开(公告)号：US6111722A

    公开(公告)日：2000-08-29

    申请号：US71040

    申请日：1998-05-04

    申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Yuichi Ohsawa

    发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Yuichi Ohsawa

    IPC分类号： G11B5/39 ,  G11B5/48 ,  G11C11/15 ,  H01F10/00 ,  H01F10/08 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3967 ,  H01L43/08 ,  G11B2005/3996 ,  G11B5/488

    摘要： A spin valve GMR element comprises a pair of magnetic biasing films disposed with a predetermined gap and a spin valve GMR film disposed in such a manner that at least both edge portions thereof are stacked on the pair of magnetic biasing films. The spin valve GMR film has a free layer containing a magnetic layer large in its saturation magnetization such as a Co containing magnetic layer. The magnetic biasing film has a laminate film composed of a high saturation magnetization magnetic layer and a magnetic hard layer. The high saturation magnetization layer, for a saturation magnetization Ms.sup.free of a free layer and a saturation magnetization of Ms.sup.hard of a magnetic hard layer, has a saturation magnetization Ms.sup.high satisfying at least one of Ms.sup.high .gtoreq.Ms.sup.free and Ms.sup.high .gtoreq.Ms.sup.hard. According to such a bias structure, when a spin valve GMR element of an over laid structure is narrowed in its track, Barkhausen noise can be effectively suppressed from occurring.

    摘要翻译： 自旋阀GMR元件包括以预定间隙设置的一对磁偏置膜和以至少两个边缘部分堆叠在一对磁偏置膜上的方式设置的自旋阀GMR膜。 自旋阀GMR膜具有包含其饱和磁化强度大的含有Co的磁性层的磁性层的自由层。 磁偏置膜具有由高饱和磁化磁化层和磁性硬质层构成的层叠膜。 高饱和磁化层，对于磁性硬层的自由层的饱和磁化强度Msfree和Mshard的饱和磁化强度，具有满足Mshigh> / = Msfree和Mshigh> / = Mshard中的至少一个的饱和磁化强度Mshigh。 根据这种偏压结构，当过度铺设结构的自旋阀GMR元件在其轨道上变窄时，可以有效地抑制巴克豪森噪声的发生。

    Magnetoresistive head
    43.
    发明授权
    Magnetoresistive head 失效
    磁阻头

    公开(公告)号：US5796560A

    公开(公告)日：1998-08-18

    申请号：US614146

    申请日：1996-03-12

    申请人： Kazuhiro Saito ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Susumu Hashimoto ,  Hiromi Fuke ,  Tomomi Funayama

    发明人： Kazuhiro Saito ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Susumu Hashimoto ,  Hiromi Fuke ,  Tomomi Funayama

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3916 ,  G11B2005/3996

    摘要： A magnetoresistive head is disclosed which uses a crystalline soft magnetic film as an undercoat for a giant magnetoresistive film provided with at least one pair of ferro-magnetic films opposed to each other across a nonmagnetic intermediate layer or for an anisotropically magnetoresistive film. The crystalline soft magnetic film comprises a film which has as a main component thereof at least one element selected from the group consisting of Ni, Fe, and Co and simultaneously incorporates therein at least one element selected from the group consisting of Nb, Mo, V, W, Ti, Zr, Hf, and Ta and at least one element selected from the group consisting of Cr, Rh, Os, Re, Si, Al, Be, Ga, and Ge.

    摘要翻译： 公开了一种使用结晶软磁膜作为底涂层的磁阻磁头，该磁阻膜具有在非磁性中间层或各向异性磁阻膜上彼此相对的至少一对铁磁性膜的巨磁阻膜。 结晶软磁性膜包含以Ni，Fe，Co为主成分的至少一种元素作为主要成分的膜，同时含有选自Nb，Mo，V ，W，Ti，Zr，Hf和Ta以及选自Cr，Rh，Os，Re，Si，Al，Be，Ga和Ge中的至少一种元素。

    Magnetoresistance effect head
    46.
    发明授权
    Magnetoresistance effect head 失效
    磁阻效应头

    公开(公告)号：US5585199A

    公开(公告)日：1996-12-17

    申请号：US303014

    申请日：1994-09-08

    申请人： Yuzo Kamiguchi ,  Susumu Hashimoto ,  Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Masashi Sahashi

    发明人： Yuzo Kamiguchi ,  Susumu Hashimoto ,  Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Masashi Sahashi

    IPC分类号： G11B5/012 ,  G11B5/39 ,  H01F10/32 ,  H01F1/00 ,  G11B21/00

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/3281 ,  G11B2005/3996 ,  G11B5/012 ,  H01F10/3295 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12535

    摘要： A magnetoresistance effect head is disclosed which is provided with a spin valve film of the three-layer laminate construction comprising a pair of magnetic layers made of a Co-based alloy and a nonmagnetic intermediate layer interposed between the pair of magnetic layers. This magnetoresistance effect head satisfies the expressions, 3.ltoreq.d.sub.1 .ltoreq.7, 3.ltoreq.d.sub.2 .ltoreq.7, and 0.ltoreq. (d.sub.1 -d.sub.2)/d.sub.1 .ltoreq.0.40, wherein d.sub.1 and d.sub.2 stand for the thicknesses (nm) of the pair of magnetic layers (providing d.sub.1 .gtoreq.d.sub.2). A soft magnetic layer of high resistance is disposed contiguously to that of the pair of magnetic layers which has the direction of magnetization thereof varied by an external magnetic layer. The total thickness of this soft magnetic layer and the magnetic layer contiguous thereto is in the range of from 5 to 40 nm. In the case of a magnetoresistance effect head which is provided with a spin valve film of the five-layer laminate construction, the thicknesses (nm), d.sub.1 and d.sub.2, of the two outer magnetic layers similarly satisfy the conditions mentioned above. Further, the thickness (nm), d.sub.3, of the center magnetic layer satisfies the expression, 1.ltoreq.d.sub.3 .ltoreq.2/3d.sub.1. As a result, the magnetoresistance effect head acquires the ability to produce a large rate of change of magnetic resistance with high repeatability.

    摘要翻译： 公开了一种磁阻效应头，其具有三层层压结构的自旋阀膜，该三层层压结构包括一对由Co基合金制成的磁性层和介于该一对磁性层之间的非磁性中间层。 该磁电阻效应头满足表达式，其中d1和d2表示为3 / = d2）。 高电阻的软磁性层与具有由外部磁性层变化的磁化方向的一对磁性层的磁性层相邻设置。 该软磁性层和与其相邻的磁性层的总厚度为5〜40nm的范围。 在具有五层层叠结构的自旋阀膜的磁阻效应头的情况下，两个外磁层的厚度（nm），d1和d2类似地满足上述条件。 此外，中心磁性层的厚度（nm），d3满足表达式1，d3，其中E 2， 结果，磁阻效应头获得以高重复性产生大的磁阻变化率的能力。

    Hard magnetic film structural body, magnetoresistance effect device thereof, magnetic head, magnetic recording/reproducing head thereof, and magnetic record medium thereof, and magnetic storing apparatus thereof
    49.
    发明申请
    Hard magnetic film structural body, magnetoresistance effect device thereof, magnetic head, magnetic recording/reproducing head thereof, and magnetic record medium thereof, and magnetic storing apparatus thereof 有权
    硬磁膜结构体，磁电阻效应器件，磁头，磁记录/再现头及其磁记录介质及其磁存储装置

    公开(公告)号：US20060198063A1

    公开(公告)日：2006-09-07

    申请号：US11417195

    申请日：2006-05-04

    申请人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

    发明人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  H01F10/132 ,  H01F10/16 ,  H01F10/3281 ,  H01L43/08

    摘要： A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.

    摘要翻译： 含有Co作为结构元件的硬磁性膜的基膜具有形成在基板主表面上的Cr膜等晶体金属基膜和在基板和结晶金属之间形成的反应性基膜（混合层） 并且具有包含基板的结构元件的反应性非晶层和晶体金属基膜的结构元件。 在晶体金属基膜上形成含有Co作为结构元素的硬磁性膜。 利用在非晶层上形成的Cr膜等晶体金属基膜，可以以高再现性获得具有双晶结构的硬磁性膜。 对于硬磁性膜，可以提高矫顽力Hc，剩余磁化强度Mr，饱和磁化强度Ms和平方比S等磁特性，而无需使用厚基膜。 含有Co作为结构元件的硬磁性膜被施加到磁阻效应装置的偏磁场施加膜和磁记录介质的记录层。