公开(公告)号：US20170140978A1

公开(公告)日：2017-05-18

申请号：US15421472

申请日：2017-02-01

Applicant: Infineon Technologies Dresden GmbH

Inventor： Steffen Bieselt

IPC: H01L21/764

CPC classification number: H01L21/764 ,  B23Q3/18 ,  H01L21/4803 ,  H01L21/481 ,  H01L23/053 ,  H01L23/08 ,  H01L23/13 ,  H01L23/147 ,  H01L23/34 ,  H01L23/498 ,  H01L2924/0002 ,  Y10T29/49155 ,  H01L2924/00

Abstract: According to various embodiments, a carrier may be provided, the carrier including: a hollow chamber spaced apart from a surface of the carrier; a trench structure extending from the surface of the carrier to the hollow chamber and laterally surrounding a first region of the carrier, the trench structure including one or more trenches extending from the surface of the carrier to the hollow chamber, and one or more support structures intersecting the one or more trenches and connecting the first region of the carrier with a second region of the carrier outside the trench structure, wherein the one or more support structures including an electrically insulating material.

公开(公告)号：US09613878B2

公开(公告)日：2017-04-04

申请号：US14098570

申请日：2013-12-06

Applicant: Infineon Technologies Dresden GmbH

Inventor： Steffen Bieselt

IPC: H05K1/00 ,  H01L23/053 ,  B23Q3/18 ,  H01L21/48 ,  H01L23/08 ,  H01L23/498 ,  H01L23/13 ,  H01L23/14 ,  H01L23/34

CPC classification number: H01L21/764 ,  B23Q3/18 ,  H01L21/4803 ,  H01L21/481 ,  H01L23/053 ,  H01L23/08 ,  H01L23/13 ,  H01L23/147 ,  H01L23/34 ,  H01L23/498 ,  H01L2924/0002 ,  Y10T29/49155 ,  H01L2924/00

Abstract: According to various embodiments, a carrier may be provided, the carrier including: a hollow chamber spaced apart from a surface of the carrier; a trench structure extending from the surface of the carrier to the hollow chamber and laterally surrounding a first region of the carrier, the trench structure including one or more trenches extending from the surface of the carrier to the hollow chamber, and one or more support structures intersecting the one or more trenches and connecting the first region of the carrier with a second region of the carrier outside the trench structure, wherein the one or more support structures including an electrically insulating material.

公开(公告)号：US09560765B2

公开(公告)日：2017-01-31

申请号：US14098591

申请日：2013-12-06

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch ,  Alessia Scire ,  Steffen Bieselt ,  Franz Hirler ,  Anton Mauder ,  Wolfgang Scholz ,  Hans-Joachim Schulze ,  Francisco Javier Santos Rodriguez

IPC: H05K1/18 ,  H05K1/02 ,  H05K3/30 ,  H01L27/12

CPC classification number: H01L27/1207 ,  H01L21/761 ,  H01L21/76283 ,  H01L21/764 ,  H01L21/76895 ,  H01L21/823487 ,  H01L29/7397 ,  H01L29/7813 ,  H05K1/0256 ,  H05K1/0284 ,  H05K1/183 ,  H05K3/30 ,  H05K2201/10522 ,  Y10T29/4913

Abstract: According to various embodiments, an electronic device may include a carrier including at least a first region and a second region being laterally adjacent to each other; an electrically insulating structure arranged in the first region of the carrier, wherein the second region of the carrier is free of the electrically insulating structure; a first electronic component arranged in the first region of the carrier over the electrically insulating structure; a second electronic component arranged in the second region of the carrier; wherein the electrically insulating structure includes one or more hollow chambers, wherein the sidewalls of the one or more hollow chambers are covered with an electrically insulating material.

Abstract translation: 根据各种实施例，电子设备可以包括载体，其包括至少第一区域和彼此横向相邻的第二区域; 布置在所述载体的所述第一区域中的电绝缘结构，其中所述载体的所述第二区域没有所述电绝缘结构; 布置在电绝缘结构上的载体的第一区域中的第一电子部件; 布置在所述载体的第二区域中的第二电子部件; 其中所述电绝缘结构包括一个或多个中空室，其中所述一个或多个中空室的侧壁被电绝缘材料覆盖。

公开(公告)号：US20160118270A1

公开(公告)日：2016-04-28

申请号：US14977708

申请日：2015-12-22

Applicant: Infineon Technologies Dresden GmbH

Inventor： Steffen Bieselt

IPC: H01L21/48

CPC classification number: H01L21/481 ,  H01L21/02104 ,  H01L21/76224 ,  H01L21/76283 ,  H01L21/764 ,  H01L23/053 ,  H01L2924/0002 ,  H05K1/02 ,  Y10T428/13 ,  H01L2924/00

Abstract: According to various embodiments, a carrier may include: a hollow chamber spaced apart from a surface of the carrier; and at least one support structure within the hollow chamber connecting a first region of the carrier disposed over the hollow chamber with a second region of the carrier disposed below the hollow chamber, wherein at least a part of a surface of the at least one support structure is spaced apart from an inner surface of the hollow chamber, and wherein the at least one support structure includes an electrically insulating material.

公开(公告)号：US20160104625A1

公开(公告)日：2016-04-14

申请号：US14512916

申请日：2014-10-13

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch ,  Heiko Fröhlich ,  Mirko Vogt ,  Maik Stegemann ,  Andre Röth ,  Steffen Bieselt

IPC: H01L21/3065 ,  H01L29/84

CPC classification number: B81B7/02 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2207/015 ,  B81C1/00246 ,  B81C2203/0764 ,  H01L21/3065 ,  H01L29/84

Abstract: Embodiments relate to integrated circuit sensors, and more particularly to sensors integrated in an integrated circuit structure and methods for producing the sensors. In an embodiment, a sensor device comprises a substrate; a first trench in the substrate; a first moveable element suspended in the first trench by a first plurality of support elements spaced apart from one another and arranged at a perimeter of the first moveable element; and a first layer arranged on the substrate to seal the first trench, thereby providing a first cavity containing the first moveable element and the first plurality of support elements

Abstract translation: 实施例涉及集成电路传感器，更具体地涉及集成在集成电路结构中的传感器和用于产生传感器的方法。 在一个实施例中，传感器装置包括衬底; 衬底中的第一沟槽; 第一可移动元件，其通过彼此间隔开并布置在第一可移动元件的周边的第一多个支撑元件悬挂在第一沟槽中; 以及布置在所述基板上以密封所述第一沟槽的第一层，从而提供包含所述第一可移动元件和所述第一多个支撑元件的第一空腔

公开(公告)号：US09236241B2

公开(公告)日：2016-01-12

申请号：US14269260

申请日：2014-05-05

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch ,  Alessia Scire ,  Steffen Bieselt ,  Uwe Rudolph ,  Marco Mueller ,  Boris Binder

IPC: H01L21/302 ,  H01L21/02

CPC classification number: H01L21/02002 ,  H01L21/02005 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/764 ,  H01L21/7806 ,  Y10T156/1057 ,  Y10T156/11 ,  Y10T428/13

Abstract: According to various embodiments, a method for processing a wafer may include: forming at least one hollow chamber and a support structure within the wafer, the at least one hollow chamber defining a cap region of the carrier located above the at least one hollow chamber and a bottom region of the carrier located below the at least one hollow chamber and an edge region surrounding the cap region of the carrier, wherein a surface area of the cap region is greater than a surface area of the edge region, and wherein the cap region is connected to the bottom region by the support structure; removing the cap region in one piece from the bottom region and the edge region.

Abstract translation: 根据各种实施例，用于处理晶片的方法可以包括：在晶片内形成至少一个中空室和支撑结构，所述至少一个中空室限定位于至少一个中空室上方的载体的盖区域， 位于所述至少一个中空室下方的所述载体的底部区域和围绕所述载体的所述盖区域的边缘区域，其中所述盖区域的表面积大于所述边缘区域的表面积，并且其中所述盖区域 通过支撑结构连接到底部区域; 从底部区域和边缘区域去除一个部分的帽区域。

公开(公告)号：US20150162254A1

公开(公告)日：2015-06-11

申请号：US14098580

申请日：2013-12-06

Applicant: Infineon Technologies Dresden GmbH

Inventor： Steffen Bieselt

IPC: H01L23/053 ,  H01L21/02 ,  H05K1/02 ,  H01L21/762 ,  H01L21/48

CPC classification number: H01L21/481 ,  H01L21/02104 ,  H01L21/76224 ,  H01L21/76283 ,  H01L21/764 ,  H01L23/053 ,  H01L2924/0002 ,  H05K1/02 ,  Y10T428/13 ,  H01L2924/00

Abstract: According to various embodiments, a carrier may include: a hollow chamber spaced apart from a surface of the carrier; and at least one support structure within the hollow chamber connecting a first region of the carrier disposed over the hollow chamber with a second region of the carrier disposed below the hollow chamber, wherein at least a part of a surface of the at least one support structure is spaced apart from an inner surface of the hollow chamber, and wherein the at least one support structure includes an electrically insulating material.

Abstract translation: 根据各种实施例，载体可以包括：与载体的表面间隔开的中空室; 以及在所述中空室内的至少一个支撑结构，其将布置在所述中空室上方的所述载体的第一区域与设置在所述中空室下方的所述载体的第二区域连接，其中所述至少一个支撑结构的表面的至少一部分 与所述中空室的内表面间隔开，并且其中所述至少一个支撑结构包括电绝缘材料。

公开(公告)号：US20140097521A1

公开(公告)日：2014-04-10

申请号：US13648170

申请日：2012-10-09

Applicant: INFINEON TECHNOLOGIES DRESDEN GMBH

Inventor： Thoralf Kautzsch ,  Alessia Scire ,  Steffen Bieselt

IPC: H01L29/02 ,  H01L21/26 ,  H01L21/302

CPC classification number: H01L21/764 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C2201/0116 ,  H01L21/3247 ,  H01L21/7624 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/7833

Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The first cavity is disposed under a portion of the substrate. The method further includes forming a first pillar within the first cavity to support the portion of the substrate.

Abstract translation: 根据本发明的实施例，形成半导体器件的方法包括在衬底内形成第一空腔。 第一空腔设置在基板的一部分下方。 该方法还包括在第一腔内形成第一支柱以支撑衬底的该部分。