公开(公告)号：US20180294527A1

公开(公告)日：2018-10-11

申请号：US15818286

申请日：2017-11-20

Applicant: International Business Machines Corporation

Inventor： Joel P. de Souza ,  Yun Seog Lee ,  Ning Li ,  Devendra K. Sadana

IPC: H01M10/0585 ,  H01M2/20 ,  H01M4/131 ,  H01M10/0525 ,  H01M2/34 ,  H01M2/26

Abstract: Solid-state battery structures, particularly solid-state lithium-based battery structures, which are fast charging and have a high capacity are provided. Notably, fast charging, high capacity solid-state battery structures are provided that include a plurality of solid-state-thin-film batteries that are stacked one atop the other, or that include an array of interconnected solid-state thin-film batteries, or that contain a solid-state thin-film battery located on physically exposed surfaces of fin structures.

公开(公告)号：US10092487B2

公开(公告)日：2018-10-09

申请号：US15142779

申请日：2016-04-29

Applicant: International Business Machines Corporation

Inventor： Talia S. Gershon ,  Yun Seog Lee ,  Ning Li ,  Devendra Sadana ,  Teodor K. Todorov

IPC: A61K8/11 ,  A61Q17/04 ,  A61K8/27 ,  A61K8/25 ,  A61K8/19

Abstract: Zinc oxide compositions as well as techniques for plasmonic enhancement of absorption in sunscreen applications are provided herein. A method includes selecting one or more metal particles to be used in conjunction with one or more zinc oxide particles in a sunscreen composition, wherein said selecting is based on the plasmon resonance frequency associated with each of the metal particles; and embedding the one or more selected metal particles into each of the one or more zinc oxide particles.

公开(公告)号：US20180287002A1

公开(公告)日：2018-10-04

申请号：US15832916

申请日：2017-12-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen W. Bedell ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi

IPC: H01L31/074 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0725 ,  H01L31/0735

Abstract: A photovoltaic device including a first cell positioned at a light receiving end of the photovoltaic device. The first cell has a first sequence of first semiconductor material layers of a first composition and the first junction has a first thickness. The photovoltaic device further includes at least a second cell positioned further from the light receiving end of the photovoltaic device than the first cell. Each cell in the at least one second cell has a greater thickness than the first thickness. The at least second cell comprising second semiconductor material layers in a second sequence equal to the first semiconductor material layers in the first sequence of the first cell.

公开(公告)号：US20180277706A1

公开(公告)日：2018-09-27

申请号：US15468891

申请日：2017-03-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen W. Bedell ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi

IPC: H01L31/173 ,  H01L31/0304 ,  H01L31/02 ,  H01L31/0693 ,  H01L31/18 ,  H01L33/32 ,  H01L33/06 ,  H01L33/00

CPC classification number: H01L31/173 ,  H01L31/02005 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/0693 ,  H01L31/1856 ,  H01L31/1864 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  Y02E10/544 ,  Y02P70/521

Abstract: An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials.

公开(公告)号：US20180277705A1

公开(公告)日：2018-09-27

申请号：US15831844

申请日：2017-12-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen W. Bedell ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi

IPC: H01L31/153 ,  H01L31/0735 ,  H01L31/18 ,  H01L33/00 ,  H01L31/0352 ,  H01L33/32 ,  H01L33/06

CPC classification number: H01L31/153 ,  H01L31/035236 ,  H01L31/0735 ,  H01L31/1856 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/32 ,  Y02E10/544 ,  Y02P70/521

Abstract: An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials. A zinc oxide interface layer is present between the LED and the photovoltaic device. The zinc oxide layers or can also form a LED.

公开(公告)号：US20180260684A1

公开(公告)日：2018-09-13

申请号：US15803957

申请日：2017-11-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Joel P. de Souza ,  Yun Seog Lee ,  Ning Li ,  Devendra K. Sadana

IPC: G06N3/04 ,  G06N3/063

CPC classification number: G06N3/04 ,  G06N3/063 ,  G06N3/0635 ,  G06N3/084 ,  H01M10/00

Abstract: Methods for controlling the resistance of a controllable resistive element include determining an amount of electrical resistance change for the controllable resistive element. A concentration difference is determined for a charge carrier ion in a resistor layer of the controllable resistance element that corresponds to the electrical resistance change for the controllable resistive element. A duration and amplitude of a current pulse is determined that changes the charge carrier ion concentration by the determined difference. A positive or negative current pulse is applied to a controllable resistive element for the determined duration.

公开(公告)号：US20180254395A1

公开(公告)日：2018-09-06

申请号：US15969402

申请日：2018-05-02

Applicant: International Business Machines Corporation

Inventor： Stephen W. Bedell ,  Bing Dang ,  Ning Li ,  Frank R. Libsch ,  Devendra K. Sadana

IPC: H01L33/62 ,  H01L25/075

CPC classification number: H01L33/62 ,  H01L23/48 ,  H01L25/0753 ,  H01L2933/0066

Abstract: Magnetic regions of at least one of chiplet or a receiving substrate are used to permit magnetically guided precision placement of chiplets on the receiving substrate. In some embodiments, a scanning magnetic head can be used to release individual chiplets from a temporary support substrate to the receiving substrate. Structures are provided in which a magnetic moment of a controlled orientation exists between the transferred chiplets and the receiving substrate.

公开(公告)号：US20180226540A1

公开(公告)日：2018-08-09

申请号：US15948577

申请日：2018-04-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeehwan Kim ,  Ning Li ,  Devendra K. Sadana

IPC: H01L33/10 ,  H01L31/18 ,  H01L31/0304 ,  H01L33/12 ,  H01L31/0232 ,  H01L31/105 ,  H01L31/0352 ,  H01L33/00 ,  H01L33/30

Abstract: An optoelectronic device that includes a germanium containing buffer layer atop a silicon containing substrate, and a first distributed Bragg reflector stack of III-V semiconductor material layers on the buffer layer. The optoelectronic device further includes an active layer of III-V semiconductor material present on the first distributed Bragg reflector stack, wherein a difference in lattice dimension between the active layer and the first distributed brag reflector stack induces a strain in the active layer. A second distributed Bragg reflector stack of III-V semiconductor material layers having a may be present on the active layer.

公开(公告)号：US10025029B2

公开(公告)日：2018-07-17

申请号：US14925664

申请日：2015-10-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Russell A. Budd ,  Effendi Leobandung ,  Ning Li ,  Jean-Olivier Plouchart ,  Devendra K. Sadana

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/42 ,  H01L31/0216 ,  H01L31/103 ,  H01L31/18 ,  G02B6/132

Abstract: An optoelectronic device includes an integrated circuit including electronic devices formed on a front side of a semiconductor substrate. A barrier layer is formed on a back side of the semiconductor substrate. A photonics layer is formed on the barrier layer. The photonics layer includes a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core. The core is configured to couple light generated from a component of the optoelectronic device.

公开(公告)号：US09993402B2

公开(公告)日：2018-06-12

申请号：US15082624

申请日：2016-03-28

Applicant: International Business Machines Corporation

Inventor： Talia S. Gershon ,  Ning Li ,  Devendra Sadana ,  Teodor K. Todorov

IPC: A61K8/00 ,  A61K8/19 ,  A61K8/27 ,  A61K8/26 ,  A61K8/24 ,  A61K8/02 ,  A61Q17/04 ,  C09K11/64 ,  C09K11/77

CPC classification number: A61Q17/04 ,  A61K8/0275 ,  A61K8/24 ,  A61K8/27 ,  A61K2800/81 ,  C09K11/641 ,  C09K11/7712 ,  C09K11/7721 ,  C09K11/7734 ,  C09K11/7749 ,  C09K11/7764 ,  C09K11/7777

Abstract: Sunscreen additives for enhancing vitamin D production are provided herein. A method includes selecting phosphor materials to incorporate into zinc oxide particles, wherein the phosphor materials are capable of carrying out an up-conversion process whereby two or more photons absorbed by the zinc oxide particles and/or the phosphor materials within a first wavelength range are emitted as at least one photon within a second wavelength range. The method also includes incorporating the selected phosphor materials into the zinc oxide particles. A composition includes zinc oxide particles suspended within a medium of a sunscreen composition, and phosphor materials incorporated into the zinc oxide particles, wherein the phosphor materials are capable of carrying out an up-conversion process whereby two or more photons absorbed by the zinc oxide particles and/or the phosphor materials within a first wavelength range are emitted as at least one photon within a second wavelength range.