公开(公告)号：US09653535B2

公开(公告)日：2017-05-16

申请号：US14831487

申请日：2015-08-20

Applicant: International Business Machines Corporation

Inventor： Nicolas L. Breil ,  Ricardo A. Donaton ,  Dong Hun Kang ,  Herbert L. Ho ,  Rishikesh Krishnan

IPC: H01L21/8242 ,  H01L49/02 ,  H01L21/283 ,  H01L27/108

CPC classification number: H01L28/91 ,  H01L21/283 ,  H01L27/1082 ,  H01L27/10832 ,  H01L27/10858 ,  H01L27/10867 ,  H01L27/1087 ,  H01L28/90

Abstract: Method of forming a deep trench capacitor are provided. The method may include forming a deep trench in a substrate; forming a metal-insulator-metal (MIM) stack within a portion of the deep trench, the MIM stack forming including forming an outer electrode by co-depositing a refractory metal and silicon into the deep trench; and filling a remaining portion of the deep trench with a semiconductor.

公开(公告)号：US09496329B2

公开(公告)日：2016-11-15

申请号：US14831504

申请日：2015-08-20

Applicant: International Business Machines Corporation

Inventor： Nicolas L. Breil ,  Ricardo A. Donaton ,  Dong Hun Kang ,  Herbert L. Ho ,  Rishikesh Krishnan

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/283

CPC classification number: H01L28/91 ,  H01L21/283 ,  H01L27/1082 ,  H01L27/10832 ,  H01L27/10858 ,  H01L27/10867 ,  H01L27/1087 ,  H01L28/90

Abstract: A deep trench capacitor is provided. The deep trench capacitor may include: a deep trench in a substrate, the deep trench including an lower portion having a width that is wider than a width of the rest of the deep trench; a compressive stress layer against the substrate in the lower portion; a metal-insulator-metal (MIM) stack over the compressive stress layer, the MIM stack including a node dielectric between an inner electrode and an outer electrode; and a semiconductor core within the MIM stack.

Abstract translation: 提供深沟槽电容器。 深沟槽电容器可以包括：衬底中的深沟槽，所述深沟槽包括具有比所述深沟槽的其余部分的宽度宽的宽度的下部; 在下部的与基底相对的压缩应力层; 在所述压应力层上的金属 - 绝缘体 - 金属（MIM）堆叠，所述MIM堆叠包括在内部电极和外部电极之间的节点电介质; 以及MIM堆叠内的半导体核心。

公开(公告)号：US20160181353A1

公开(公告)日：2016-06-23

申请号：US14572974

申请日：2014-12-17

Applicant: International Business Machines Corporation

Inventor： Takashi Ando ,  Eduard A. Cartier ,  Michael P. Chudzik ,  Aritra Dasgupta ,  Herbert L. Ho ,  Donghun Kang ,  Rishikesh Krishnan ,  Vijay Narayanan ,  Kern Rim

IPC: H01L49/02 ,  H01L23/00

CPC classification number: H01L21/02365 ,  H01G4/005 ,  H01L21/02178 ,  H01L21/02617 ,  H01L21/20 ,  H01L21/3221 ,  H01L23/26 ,  H01L27/10861 ,  H01L27/1087 ,  H01L28/60 ,  H01L28/90 ,  H01L29/66181 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.

Abstract translation: 一种包括在绝缘层和衬底之间的深沟槽电容器的绝缘层的一侧上形成氧吸气层的方法，所述吸氧层包括含铝化合物，并且在绝缘层的顶部上沉积内电极， 内部电极包括金属。

公开(公告)号：US09373501B2

公开(公告)日：2016-06-21

申请号：US13863580

申请日：2013-04-16

Applicant: International Business Machines Corporation

Inventor： Takashi Ando ,  Michael P. Chudzik ,  Min Dai ,  Martin M. Frank ,  David F. Hilscher ,  Rishikesh Krishnan ,  Barry P. Linder ,  Claude Ortolland ,  Joseph F. Shepard, Jr.

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/3205 ,  C23C16/02 ,  C23C16/455 ,  H01L21/762 ,  H01L29/16 ,  H01L29/161 ,  H01L29/51 ,  C23C16/40

CPC classification number: H01L21/02301 ,  C23C16/0227 ,  C23C16/403 ,  C23C16/405 ,  C23C16/407 ,  C23C16/45525 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/28194 ,  H01L21/762 ,  H01L29/16 ,  H01L29/161 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A surface of a semiconductor-containing dielectric material/oxynitride/nitride is treated with a basic solution in order to provide hydroxyl group termination of the surface. A dielectric metal oxide is subsequently deposited by atomic layer deposition. The hydroxyl group termination provides a uniform surface condition that facilitates nucleation and deposition of the dielectric metal oxide, and reduces interfacial defects between the oxide and the dielectric metal oxide. Further, treatment with the basic solution removes more oxide from a surface of a silicon germanium alloy with a greater atomic concentration of germanium, thereby reducing a differential in the total thickness of the combination of the oxide and the dielectric metal oxide across surfaces with different germanium concentrations.

Abstract translation: 用碱性溶液处理含半导体的电介质材料/氧氮化物/氮化物的表面，以提供表面的羟基终止。 随后通过原子层沉积沉积介电金属氧化物。 羟基终止提供了促进介电金属氧化物的成核和沉积的均匀的表面条件，并且减少了氧化物和介电金属氧化物之间的界面缺陷。 此外，用碱性溶液处理从锗锗合金的表面除去更多的锗原子浓度的锗，从而减少氧化物和电介质金属氧化物的组合的总厚度与不同锗的表面的差异 浓度

公开(公告)号：US20150357403A1

公开(公告)日：2015-12-10

申请号：US14831504

申请日：2015-08-20

Applicant: International Business Machines Corporation

Inventor： Nicolas L. Breil ,  Ricardo A. Donaton ,  Dong Hun Kang ,  Herbert L. Ho ,  Rishikesh Krishnan

IPC: H01L49/02

CPC classification number: H01L28/91 ,  H01L21/283 ,  H01L27/1082 ,  H01L27/10832 ,  H01L27/10858 ,  H01L27/10867 ,  H01L27/1087 ,  H01L28/90

Abstract: A deep trench capacitor is provided. The deep trench capacitor may include: a deep trench in a substrate, the deep trench including an lower portion having a width that is wider than a width of the rest of the deep trench; a compressive stress layer against the substrate in the lower portion; a metal-insulator-metal (MIM) stack over the compressive stress layer, the MIM stack including a node dielectric between an inner electrode and an outer electrode; and a semiconductor core within the MIM stack.

Abstract translation: 提供深沟槽电容器。 深沟槽电容器可以包括：衬底中的深沟槽，所述深沟槽包括具有比所述深沟槽的其余部分的宽度宽的宽度的下部; 在下部的与基底相对的压缩应力层; 在所述压应力层上的金属 - 绝缘体 - 金属（MIM）堆叠，所述MIM堆叠包括在内部电极和外部电极之间的节点电介质; 以及MIM堆叠内的半导体核心。

公开(公告)号：US09087927B2

公开(公告)日：2015-07-21

申请号：US14521743

申请日：2014-10-23

Applicant: International Business Machines Corporation

Inventor： Michael P. Chudzik ,  Bachir Dirahoui ,  Rishikesh Krishnan ,  Siddarth A. Krishnan ,  Oh-jung Kwon ,  Paul C. Parries ,  Hongwen Yan

IPC: H01L49/02 ,  H01L21/84 ,  H01L27/108 ,  H01L29/94 ,  H01L27/12 ,  H01L21/02

CPC classification number: H01L28/91 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/84 ,  H01L27/10847 ,  H01L27/1087 ,  H01L27/1203 ,  H01L29/945

Abstract: A trench structure that in one embodiment includes a trench present in a substrate, and a dielectric layer that is continuously present on the sidewalls and base of the trench. The dielectric layer has a dielectric constant that is greater than 30. The dielectric layer is composed of tetragonal phase hafnium oxide with silicon present in the grain boundaries of the tetragonal phase hafnium oxide in an amount ranging from 3 wt. % to 20 wt. %.

Abstract translation: 在一个实施例中的沟槽结构包括存在于衬底中的沟槽，以及连续存在于沟槽的侧壁和基底上的电介质层。 电介质层的介电常数大于30.介电层由四方相铪氧化物组成，其中硅存在于四方相铪氧化物的晶界中，其量为3wt。 ％至20重量％ ％。

公开(公告)号：US20150044853A1

公开(公告)日：2015-02-12

申请号：US14521743

申请日：2014-10-23

Applicant: International Business Machines Corporation

Inventor： Michael P. Chudzik ,  Bachir Dirahoui ,  Rishikesh Krishnan ,  Siddarth A. Krishnan ,  Oh-jung Kwon ,  Paul C. Parries ,  Hongwen Yan

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/91 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/84 ,  H01L27/10847 ,  H01L27/1087 ,  H01L27/1203 ,  H01L29/945

Abstract: A trench structure that in one embodiment includes a trench present in a substrate, and a dielectric layer that is continuously present on the sidewalls and base of the trench. The dielectric layer has a dielectric constant that is greater than 30. The dielectric layer is composed of tetragonal phase hafnium oxide with silicon present in the grain boundaries of the tetragonal phase hafnium oxide in an amount ranging from 3 wt. % to 20 wt. %.

Abstract translation: 在一个实施例中的沟槽结构包括存在于衬底中的沟槽，以及连续存在于沟槽的侧壁和基底上的电介质层。 电介质层的介电常数大于30.介电层由四方相铪氧化物组成，其中硅存在于四方相铪氧化物的晶界中，其量为3wt。 ％至20重量％ ％。