公开(公告)号：US20160294365A1

公开(公告)日：2016-10-06

申请号：US14672370

申请日：2015-03-30

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski

IPC: H03H11/28 ,  H02H9/04

CPC classification number: H02H9/04 ,  H03H7/40

Abstract: An impedance matching network comprises a first signal terminal configured to receive a signal from a source circuit and a second signal terminal configured to provide the signal to a load circuit. The network further comprises a series branch comprising a variable capacitive component between the first signal terminal and the second signal terminal. The variable capacitive component comprises a plurality of capacitive portions connected in series, wherein at least one of the capacitive portions comprises a switching element comprising a stack of series connected transistors. The impedance matching network also comprises a control component configured to control a capacitance of the variable capacitive component by controlling the at least one of the capacitive portions based on a predetermined algorithm.

Abstract translation: 阻抗匹配网络包括被配置为从源电路接收信号的第一信号端和被配置为将信号提供给负载电路的第二信号端。 该网络还包括串联支路，其包括在第一信号端和第二信号端之间的可变电容分量。 可变电容性部件包括串联连接的多个电容部分，其中电容部分中的至少一个包括包括串联连接的晶体管的堆叠的开关元件。 阻抗匹配网络还包括控制部件，其被配置为基于预定算法来控制电容部分中的至少一个来控​​制可变电容部件的电容。

公开(公告)号：US20160241140A1

公开(公告)日：2016-08-18

申请号：US15136350

申请日：2016-04-22

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski ,  Hans Taddiken ,  Nikolay Ilkov ,  Herbert Kebinger

IPC: H02M3/07 ,  H03K17/687

CPC classification number: H02M3/07 ,  H03K17/161 ,  H03K17/6871 ,  H03K2217/0018

Abstract: A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit.

公开(公告)号：US20160056774A1

公开(公告)日：2016-02-25

申请号：US14462793

申请日：2014-08-19

Applicant: Infineon Technologies AG

Inventor： Nikolay Ilkov ,  Paulo Oliveira ,  Winfried Bakalski ,  Daniel Kehrer

IPC: H03F1/56 ,  H03F3/19

CPC classification number: H03F1/565 ,  H03F1/0205 ,  H03F3/19 ,  H03F2200/213 ,  H03F2200/222 ,  H03F2200/252 ,  H03F2200/294 ,  H03F2200/421 ,  H03F2200/451

Abstract: In accordance with an embodiment, a circuit includes a first signal path coupled between an input port and an output port, and a second coupled between the input port and the output port in parallel with the first signal path. The first signal path includes a low noise amplifier (LNA) having an input node coupled to the input port, and the second signal path includes a switch coupled between the input port and the output port.

Abstract translation: 根据实施例，电路包括耦合在输入端口和输出端口之间的第一信号路径，以及耦合在输入端口和输出端口之间并与第一信号路径连接的第二信号路径。 第一信号路径包括具有耦合到输入端口的输入节点的低噪声放大器（LNA），并且第二信号路径包括耦合在输入端口和输出端口之间的开关。

公开(公告)号：US09270248B2

公开(公告)日：2016-02-23

申请号：US13651174

申请日：2012-10-12

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski ,  Anthony Thomas

IPC: H03H7/38 ,  H01Q1/50 ,  H01L29/417 ,  H01L29/423 ,  H01L23/66 ,  H01L27/06 ,  H01L27/08 ,  H04B1/18 ,  H04B1/04 ,  H01L27/12

CPC classification number: H03H7/38 ,  H01L23/66 ,  H01L27/0641 ,  H01L27/08 ,  H01L27/0808 ,  H01L27/1203 ,  H01L29/41733 ,  H01L29/42384 ,  H01L2223/6655 ,  H01L2223/6677 ,  H01L2924/0002 ,  H04B1/0458 ,  H04B1/18 ,  H01L2924/00

Abstract: An impedance matching network comprises a first and a second signal terminal and a reference potential terminal. The network further comprises a first shunt branch between the first signal terminal and the reference potential terminal, the first shunt branch comprising a variable inductive element and a first capacitive element. The impedance matching network also comprises a second shunt branch between the second signal terminal and the reference potential terminal and comprising a second capacitive element. A series branch between the first signal terminal and the second signal terminal comprises a third capacitive element. Optionally, the first, second, and/or third capacitive element may be implemented as a variable capacitive element. The variable capacitive element comprises a plurality of transistors, wherein a combination of off-capacitances Coff of the transistors provide an overall capacitance of the variable capacitive element as a function of at least two independent transistor control signals.

Abstract translation: 阻抗匹配网络包括第一和第二信号端子和参考电位端子。 网络还包括在第一信号端和参考电位端之间的第一分路支路，第一分路支路包括可变电感元件和第一电容元件。 阻抗匹配网络还包括在第二信号端子和参考电位端子之间的第二分路支路，并且包括第二电容元件。 第一信号端子和第二信号端子之间的串联分支包括第三电容元件。 可选地，第一，第二和/或第三电容元件可以被实现为可变电容元件。 可变电容元件包括多个晶体管，其中晶体管的关断电容Coff的组合提供作为至少两个独立晶体管控制信号的函数的可变电容元件的总体电容。

公开(公告)号：US20150091668A1

公开(公告)日：2015-04-02

申请号：US14043496

申请日：2013-10-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Valentyn Solomko ,  Winfried Bakalski ,  Nikolay Ilkov

IPC: H01P5/18

CPC classification number: H03F1/56 ,  H01P5/18 ,  H03F1/0261 ,  H03F3/195 ,  H03F3/602 ,  H03F3/68 ,  H03F2200/198 ,  H03F2200/255 ,  H03F2200/451 ,  H03H7/24 ,  H03H11/36

Abstract: In accordance with an embodiment, a directional coupler includes a coupler circuit and at least one amplifier coupled between a coupler circuit isolated port and a directional coupler isolated port and/or between a coupler circuit coupled port and a directional coupler coupled port. In various embodiments, the directional coupler is disposed over and/or in a substrate.

Abstract translation: 根据实施例，定向耦合器包括耦合器电路和耦合在耦合器电路隔离端口和定向耦合器隔离端口之间和/或耦合器电路耦合端口和定向耦合器耦合端口之间的至少一个放大器。 在各种实施例中，定向耦合器设置在衬底上和/或衬底中。

公开(公告)号：US08963285B2

公开(公告)日：2015-02-24

申请号：US13790117

申请日：2013-03-08

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski ,  Anton Steltenpohl

IPC: H01L27/08 ,  H01L23/552 ,  H01L29/40 ,  H01L23/28 ,  H01L21/78 ,  H01L23/50 ,  H01L23/538 ,  H01L23/00

CPC classification number: H01L23/28 ,  H01L21/561 ,  H01L21/78 ,  H01L23/13 ,  H01L23/147 ,  H01L23/3121 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/50 ,  H01L23/538 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2224/81 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor substrate having a first main surface in which a recess is formed. Further, the semiconductor device includes an electrical interconnect structure which is arranged at a bottom of the recess. A semiconductor chip is located in the recess. The semiconductor chip includes a plurality of chip electrodes facing the electrical interconnect structure. Further, a plurality of electrically conducting elements is arranged in the electrical interconnect structure and electrically connected to the plurality of chip electrodes.

Abstract translation: 半导体器件包括具有形成凹部的第一主表面的半导体衬底。 此外，半导体器件包括设置在凹部的底部的电互连结构。 半导体芯片位于凹槽中。 半导体芯片包括面向电互连结构的多个芯片电极。 此外，多个导电元件布置在电互连结构中并电连接到多个芯片电极。

公开(公告)号：US08907702B1

公开(公告)日：2014-12-09

申请号：US13975914

申请日：2013-08-26

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Winfried Bakalski

IPC: G01R25/00 ,  G06G7/14 ,  H03K3/013

CPC classification number: H03D13/008

Abstract: In accordance with an embodiment, a phase detector circuit includes a plurality of cascaded RF stages that each has a first RF amplifier and a second RF amplifier. The first RF amplifiers are cascaded with first RF amplifiers of successive RF stages, and the second RF amplifiers are cascaded with second RF amplifiers of successive RF stages. The phase detector further includes a first mixer having a first input coupled to an output of a first RF amplifier of a first RF stage and a second input coupled to an output of a second RF amplifier of the first RF stage, and a second mixer having a first input coupled to an output of a second RF amplifier of a second RF stage and a second input coupled to an output of a first RF amplifier of the second RF stage.

Abstract translation: 根据一个实施例，相位检测器电路包括多个级联RF级，每级具有第一RF放大器和第二RF放大器。 第一RF放大器与连续RF级的第一RF放大器级联，第二RF放大器与连续RF级的第二RF放大器级联。 相位检测器还包括第一混频器，其具有耦合到第一RF级的第一RF放大器的输出的第一输入和耦合到第一RF级的第二RF放大器的输出的第二输入，以及第二混频器， 耦合到第二RF级的第二RF放大器的输出的第一输入和耦合到第二RF级的第一RF放大器的输出的第二输入。

公开(公告)号：US20130328178A1

公开(公告)日：2013-12-12

申请号：US13967547

申请日：2013-08-15

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski ,  Bernd Eisener ,  Uwe Seidel ,  Markus Zannoth

IPC: H01L23/552

CPC classification number: H01L23/552 ,  H01L23/5225 ,  H01L23/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One aspect of the invention relates to a shielding device for shielding from electromagnetic radiation, including a shielding base element, a shielding cover element and a shielding lateral element for electrically connecting the base element to the cover element in such that a circuit part to be shielded is arranged within the shielding elements. Since at least one partial section of the shielding elements includes a semiconductor material, a shielding device can be realized completely and cost-effectively in an integrated circuit.

Abstract translation: 本发明的一个方面涉及一种用于屏蔽电磁辐射的屏蔽装置，包括屏蔽基座元件，屏蔽盖元件和屏蔽横向元件，用于将基座元件电连接到覆盖元件，使屏蔽电路部分 布置在屏蔽元件内。 由于屏蔽元件的至少一部分包括半导体材料，因此可以在集成电路中完全且成本有效地实现屏蔽装置。

公开(公告)号：US10361696B1

公开(公告)日：2019-07-23

申请号：US16264186

申请日：2019-01-31

Applicant: Infineon Technologies AG

Inventor： Bernd Schleicher ,  Winfried Bakalski ,  Ruediger Bauder ,  Valentyn Solomko

IPC: H03K17/16 ,  H03K17/687

CPC classification number: H03K17/161 ,  H03K17/6871 ,  H03K17/693

Abstract: An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, a transistor including a first current node coupled to a first load resistor, a second current node coupled to ground, and a control node coupled to an internal switch node, and a filter having an input coupled to the first current node of the first transistor and an output for providing a DC voltage corresponding to the RF power present at the internal switch node.

公开(公告)号：US20180241204A1

公开(公告)日：2018-08-23

申请号：US15900228

申请日：2018-02-20

Applicant: Infineon Technologies AG

Inventor： Werner Simbuerger ,  Winfried Bakalski ,  Georg Lischka ,  Andreas Wiesbauer

IPC: H02H9/04 ,  H01L27/02 ,  H04R3/00

CPC classification number: H02H9/046 ,  H01L27/0255 ,  H01L27/0262 ,  H01L27/0288 ,  H01L27/0292 ,  H01L28/10 ,  H01L29/747 ,  H04R3/007

Abstract: An integrated circuit device comprises at least one non-linear circuit. Further the integrated circuit device comprises a plurality of terminal circuits coupled to the non-linear circuit. Each terminal circuit comprises an associated terminal and an inductor coupled to the associated terminal and to the at least one non-linear circuit. A protective device for protection of a circuit, comprises an electro-static discharge protection element configured to be coupled to a circuit terminal and an inductor coupled to the electro-static discharge protection element and configured to be coupled to the circuit. The inductor has a low quality factor.