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公开(公告)号：US20240096949A1
公开(公告)日：2024-03-21
申请号：US17946002
申请日：2022-09-15
发明人： Ruilong Xie , Kangguo Cheng , Julien Frougier , Chanro Park , Min Gyu Sung
IPC分类号： H01L29/06 , H01L27/06 , H01L29/423 , H01L29/66 , H01L29/775 , H01L29/786 , H01L29/861
CPC分类号： H01L29/0673 , H01L27/0629 , H01L29/42392 , H01L29/66136 , H01L29/66439 , H01L29/775 , H01L29/78696 , H01L29/861 , H01L29/6653 , H01L29/66545 , H01L29/66553 , H01L29/6656
摘要： A nanosheet diode includes a bookend structure and a central structure. The bookend includes a first semiconductor that is doped as one of the anode and the cathode of the diode, and includes a left block, a right block, and a first stack of spaced-apart nanosheets that horizontally connect the left and right blocks. The central structure includes a second semiconductor that is doped as the other of the anode and the cathode of the diode, and includes a front block, a rear block, and a second stack of nanosheets that are interleaved crosswise into spaces between the first stack of spaced-apart nanosheets and that horizontally connect the front and rear blocks. The bookend structure directly contacts top, bottom, and end surfaces of the second stack of nanosheets of the central structure.
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公开(公告)号：US20240096751A1
公开(公告)日：2024-03-21
申请号：US17933861
申请日：2022-09-21
发明人： Tao Li , Ruilong Xie , Kisik Choi , Brent A. Anderson
IPC分类号： H01L23/48 , H01L21/8234 , H01L29/06 , H01L29/08 , H01L29/66 , H01L29/775
CPC分类号： H01L23/481 , H01L21/823418 , H01L21/823475 , H01L29/0673 , H01L29/0847 , H01L29/66439 , H01L29/775
摘要： A semiconductor device includes first source/drain (S/D) epitaxy and a second S/D epitaxy and a gate contact. The device also includes a back end of the line (BEOL) layer connected electrically connected to the first S/D epitaxy and the gate contact on a top side of the device and a wafer that carries the BEOL layer and is on the top side of the device. The device also includes a backside trench epitaxy formed through and contacting portions of the second S/D epitaxy and a backside power distribution network electrically coupled to the backside trench epitaxy and disposed on the bottom of the device.
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43.发明授权公开(公告)号：US11937521B2
公开(公告)日：2024-03-19
申请号：US17374022
申请日：2021-07-13
发明人： Chanro Park , Kangguo Cheng , Ruilong Xie , Choonghyun Lee
CPC分类号： H10N70/068 , H10N70/023 , H10N70/046 , H10N70/063 , H10N70/066 , H10N70/245 , H10N70/826 , H10N70/8416 , H10N70/883 , H10B63/30
摘要： A non-volatile memory device and a semiconductor structure including a vertical resistive memory cell and a fabrication method therefor. The semiconductor structure including a target metal contact; a horizontal dielectric layer; and at least one vertically oriented memory cell, each vertically oriented memory cell including a vertical memory resistive element having top and bottom electrical contacts, and including a vertically-oriented seam including conductive material and extending vertically from, and electrically connected to, the bottom electrical contact, the vertically-oriented seam and the bottom electrical contact entirely located in the horizontal dielectric layer; and one of the top and bottom electrical contacts being electrically connected to the target metal contact. The target electrical contact can be electrically connected to a memory cell selector device.
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公开(公告)号：US11935930B2
公开(公告)日：2024-03-19
申请号：US17456947
申请日：2021-11-30
发明人： Julien Frougier , Ruilong Xie , Kangguo Cheng , Chanro Park , Andrew Gaul
IPC分类号： H01L29/41 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/66 , H01L29/78
CPC分类号： H01L29/41741 , H01L29/401 , H01L29/42392 , H01L29/66666 , H01L29/7827
摘要： Embodiments herein describe FETs with channels that form wrap-around contacts (a female portion of a female/male connection) with metal contacts (a male portion of the female/male connection) in order to connect the channels to the drain and source regions. In one embodiment, a first conductive contact is formed underneath a dummy channel. In addition an encapsulation material wraps around the first conductive contact. The dummy channel and the encapsulation material can then be removed and replaced by the material of the channel which, as a result, include a female portion that wraps around the first conductive contact.
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公开(公告)号：US20240088140A1
公开(公告)日：2024-03-14
申请号：US17943751
申请日：2022-09-13
发明人： Min Gyu Sung , Kangguo Cheng , Julien Frougier , Ruilong Xie , Chanro Park
IPC分类号： H01L27/088 , H01L21/02 , H01L21/3065 , H01L21/66 , H01L21/8234 , H01L29/06 , H01L29/161 , H01L29/423 , H01L29/66 , H01L29/775
CPC分类号： H01L27/088 , H01L21/02532 , H01L21/02603 , H01L21/3065 , H01L21/823412 , H01L21/823481 , H01L22/26 , H01L29/0673 , H01L29/161 , H01L29/42392 , H01L29/66439 , H01L29/775
摘要： A semiconductor device including a substrate having a dense array region and an isolation region. The semiconductor device includes plurality of first fin structures of stacked nanosheets is present in the dense array region separated by a single pitch, wherein each fin structure in the first plurality of fin structures has a same first nanosheet height as measured from an upper surface of the substrate in the dense array region. The semiconductor device further includes at least one second fin structure of stacked nanosheets is present in the isolation region, wherein a number of second fin structure in the isolation region is less than a number of first fin structures in the dense array region, the at least one fin structure having a second nano sheet height that is measured from the upper surface of the substrate in the isolation region that is the same as the first nanosheet height.
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46.发明公开公开(公告)号：US20240088034A1
公开(公告)日：2024-03-14
申请号：US17930739
申请日：2022-09-09
发明人： Tsung-Sheng Kang , Tao Li , Ruilong Xie , Chih-Chao Yang
IPC分类号： H01L23/528 , H01L21/762 , H01L27/12
CPC分类号： H01L23/5286 , H01L21/76283 , H01L27/12
摘要： A microelectronic structure including a first nano device, where the first nano device includes a plurality of transistors. A bottom dielectric isolation located on the backside of each of the plurality of transistors of the first nano device. A separating dielectric layer located on the backside of the bottom dielectric isolation layer, where the separating dielectric layer is a continuous layer on the backside of each of the plurality of transistors of the first nano device.
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公开(公告)号：US20240079333A1
公开(公告)日：2024-03-07
申请号：US17930123
申请日：2022-09-07
发明人： Huai Huang , Nicholas Anthony Lanzillo , Ruilong Xie , Hosadurga Shobha , Lawrence A. Clevenger
IPC分类号： H01L23/535 , H01L21/74 , H01L21/768 , H01L23/48
CPC分类号： H01L23/535 , H01L21/743 , H01L21/76898 , H01L23/481
摘要： A dual structure buried rail includes an upper rail and a lower rail. The upper rail may be inset relative to the lower rail. In other words, the lower rail may be wider than the upper rail, and/or the lower rail may have a larger geometrical volume than the upper rail. The upper rail may be located at a boundary of, and/or directly next to, an active device region and the lower rail may extend directly underneath at least a portion of the active device region. The lower rail may extend the entire length of the upper rail. The dual structure buried rail may reduce buried rail resistance which may reduce voltage drop thereacross and provide for improved semiconductor device and/or active device region performance. The dual structure buried rail may provide power potential delivery, provide potential sinking, or the like, to one or more active device region(s).
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公开(公告)号：US20240079294A1
公开(公告)日：2024-03-07
申请号：US17902428
申请日：2022-09-02
发明人： Tao Li , Ruilong Xie , Chih-Chao Yang , David Wolpert
IPC分类号： H01L23/48 , H01L21/8234 , H01L29/06 , H01L29/417 , H01L29/66 , H01L29/775 , H01L29/786
CPC分类号： H01L23/481 , H01L21/823412 , H01L21/823418 , H01L21/823475 , H01L29/0673 , H01L29/41733 , H01L29/66439 , H01L29/775 , H01L29/78696
摘要： A semiconductor device is provided. The semiconductor device includes a first source/drain of a first semiconductor device, and a second source/drain of a second semiconductor device. The semiconductor device further includes a source/drain contact adjoining a first side of the first source/drain, a frontside via adjoining the source/drain contact, and a backside electric contact adjoining a first side of the second source/drain, wherein the backside electric contact is on a side opposite the source/drain contact, and a conductive alignment region. The device further includes a backside interconnect electrically connected to the conductive alignment region, wherein the backside interconnect is on the same side of the first and second source/drain as the backside electric contact, and an alignment region via electrically connected to the conductive alignment region, wherein the alignment region via is on the same side of the first and second source/drain as the source/drain contact and frontside via.
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公开(公告)号：US20240072116A1
公开(公告)日：2024-02-29
申请号：US17899948
申请日：2022-08-31
发明人： Ruilong Xie , Kisik Choi , Junli Wang , Julien Frougier , Min Gyu Sung
IPC分类号： H01L29/08 , H01L23/48 , H01L29/06 , H01L29/775 , H01L29/786
CPC分类号： H01L29/0847 , H01L23/481 , H01L29/0653 , H01L29/0673 , H01L29/775 , H01L29/78696
摘要： A semiconductor structure is presented including a first source/drain (S/D) epi region having a first contact completely wrapping around the first S/D epi region, the first contact electrically connected to a backside power delivery network (BSPDN) and a second S/D epi region having a second contact directly contacting a first sidewall, a second sidewall, and a top surface of the second S/D epi region, the second contact electrically connected to back-end-of-line (BEOL) components.
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公开(公告)号：US20240071929A1
公开(公告)日：2024-02-29
申请号：US17899740
申请日：2022-08-31
发明人： Nicholas Anthony Lanzillo , Ruilong Xie , Lawrence A. Clevenger , Hosadurga Shobha , Huai Huang
IPC分类号： H01L23/532 , H01L23/522 , H01L23/528
CPC分类号： H01L23/5329 , H01L23/5226 , H01L23/5286 , H01L23/53228 , H01L23/53242
摘要： A semiconductor interconnect structure comprises a substrate, a plurality of metal lines disposed relative to the substrate and a plurality of first and second caps disposed on the metal lines wherein the first caps comprise a first dielectric material and the second caps comprise a second dielectric material different from the first dielectric material.
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