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49 条记录 (耗时 0.039 秒)

    Metal Inks, Methods of Making the Same, and Methods for Printing and/or Forming Metal Films
    41.
    发明申请
    Metal Inks, Methods of Making the Same, and Methods for Printing and/or Forming Metal Films 有权
    金属油墨，其制造方法以及印刷和/或形成金属膜的方法

    公开(公告)号：US20090004370A1

    公开(公告)日：2009-01-01

    申请号：US12131002

    申请日：2008-05-30

    申请人： Fabio ZURCHER ,  Aditi Chandra ,  Wenzhuo Guo ,  Erik Scher ,  Mao Takashima ,  Joerg Rockenberger

    发明人： Fabio ZURCHER ,  Aditi Chandra ,  Wenzhuo Guo ,  Erik Scher ,  Mao Takashima ,  Joerg Rockenberger

    IPC分类号： B05D5/12 ,  C09D11/02 ,  C09D1/00 ,  B05D5/00

    CPC分类号： C23C18/1692 ,  B41M3/006 ,  C08K3/10 ,  C09D7/61 ,  C09D11/38 ,  C23C18/1608 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1658 ,  C23C18/31 ,  C23C18/44

    摘要： Printable metal formulations, methods of making the formulations, and methods of coating or printing thin films from metal ink precursors are disclosed. The metal formulation generally includes one or more Group 4, 5, 6, 7, 8, 9, 10, 11, or 12 metal salts or metal complexes, one or more solvents adapted to facilitate coating and/or printing of the formulation, and one or more optional additives that form (only) gaseous or volatile byproducts upon reduction of the metal salt or metal complex to an elemental metal and/or alloy thereof. The formulation may be made by combining the metal salt(s) or metal complex(es) and the solvent(s), and dissolving the metal salt(s) or metal complex(es) in the solvent(s) to form the formulation. Thin films may be made by coating or printing the metal formulation on a substrate; removing the solvents to form a metal-containing precursor film; and reducing the metal-containing precursor film.

    摘要翻译： 公开了可印刷金属配方，制备方法，以及从金属油墨前体涂布或印刷薄膜的方法。 金属配方通常包括一种或多种组合物4,5,6,7,8,9,10,11或12金属盐或金属配合物，一种或多种适于促进制剂涂布和/或印刷的溶剂，以及 一种或多种任选的添加剂，其在将金属盐或金属络合物还原成元素金属和/或其合金时形成（仅）气态或挥发性副产物。 制剂可以通过将金属盐或金属络合物和溶剂组合，并将金属盐或金属络合物溶解在溶剂中来形成制剂， 。 薄膜可以通过在基底上涂覆或印刷金属制剂来制备; 除去溶剂以形成含金属的前体膜; 并还原含金属的前体膜。

    Profile engineered, electrically active thin film devices
    46.
    发明授权
    Profile engineered, electrically active thin film devices 有权
    型材设计，电活性薄膜器件

    公开(公告)号：US08426905B2

    公开(公告)日：2013-04-23

    申请号：US12243880

    申请日：2008-10-01

    申请人： Arvind Kamath ,  Erik Scher ,  Patrick Smith ,  Aditi Chandra ,  Steven Molesa

    发明人： Arvind Kamath ,  Erik Scher ,  Patrick Smith ,  Aditi Chandra ,  Steven Molesa

    IPC分类号： H01L29/788

    CPC分类号： H01L21/36 ,  C23C18/08 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/1295 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/28273 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/76871 ,  H01L21/76895 ,  H01L27/1285 ,  H01L27/1292 ,  H01L28/40 ,  H01L29/0657 ,  H01L29/66143 ,  H01L29/6675 ,  H01L29/7881 ,  H01L29/872 ,  H05K1/16 ,  H05K1/162 ,  H05K3/125 ,  H05K2201/098

    摘要： The present invention relates to electrically active devices (e.g., capacitors, transistors, diodes, floating gate memory cells, etc.) having dielectric, conductor, and/or semiconductor layers with smooth and/or dome-shaped profiles and methods of forming such devices by depositing or printing (e.g., inkjet printing) an ink composition that includes a semiconductor, metal, or dielectric precursor. The smooth and/or dome-shaped cross-sectional profile allows for smooth topological transitions without sharp steps, preventing feature discontinuities during deposition and allowing for more complete step coverage of subsequently deposited structures. The inventive profile allows for both the uniform growth of oxide layers by thermal oxidation, and substantially uniform etching rates of the structures. Such oxide layers may have a uniform thickness and provide substantially complete coverage of the underlying electrically active feature. Uniform etching allows for an efficient method of reducing a critical dimension of an electrically active structure by simple isotropic etch.

    摘要翻译： 本发明涉及具有平滑和/或圆顶形轮廓的电介质，导体和/或半导体层的电活性器件（例如，电容器，晶体管，二极管，浮动栅极存储单元等）和形成这种器件的方法 通过沉积或印刷（例如喷墨印刷）包括半导体，金属或电介质前体的油墨组合物。 平滑和/或圆顶形的横截面轮廓允许平滑的拓扑转变而没有尖锐的步骤，防止沉积期间的特征不连续性，并允许随后沉积的结构的更完整的阶梯覆盖。 本发明的轮廓允许通过热氧化均匀生长氧化物层，以及基本均匀的结构蚀刻速率。 这样的氧化物层可以具有均匀的厚度并且提供基本的电活性特征的基本上完整的覆盖。 均匀蚀刻允许通过简单的各向同性蚀刻来降低电活性结构的临界尺寸的有效方法。