摘要:
Embodiments of the present invention generally relate to methods for physical vapor deposition processes. The methods generally include synchronizing process chamber conditions with the position of a magnetron. As the magnetron is scanned over a first area of a target, the conditions within the chamber are adjusted to a first set of predetermined process conditions. As the magnetron is subsequently scanned over a second area of the target, the conditions within the chamber are adjusted to a second set of predetermined process conditions different the first set. The target may be divided into more than two areas. By correlating the position of the magnetron with different sets of process conditions, film uniformity can be improved by reducing center-to-edge non-uniformities, such as re-sputter rates which may be higher when the magnetron is near the edge of the target.
摘要:
A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings.
摘要:
A metal/metal nitride barrier layer for semiconductor device applications. The barrier layer is particularly useful in contact vias where high conductivity of the via is important, and a lower resistivity barrier layer provides improved overall via conductivity.
摘要:
A substrate processing method practiced in a plasma sputter reactor including an RF coil and two or more coaxial electromagnets, at least two of which are wound at different radii. After a barrier layer, for example, of tantalum is sputter deposited into a via hole, the RF coil is powered to cause argon sputter etching of the barrier layer and the current to the electromagnets are adjusted to steer the argon ions, for example to eliminate sidewall asymmetry. For example, the two electromagnets are powered with unequal currents of opposite polarities or a third electromagnet wrapped at a different height is powered. In one embodiment, the steering straightens the trajectories near the wafer edge. In another embodiment, the etching is divided into two steps in which the steering inclines the trajectories at opposite angles. The invention may also be applied to other materials, such as copper.
摘要:
A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings.
摘要:
Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode.
摘要:
A high-frequency, hydrogen-based radio-frequency (RF) plasma is used to reduce a metal oxide and other contaminant disposed in an aperture that is formed in an ultra-low k dielectric material. Because the frequency of the plasma is at least about 40 MHz and the primary gas in the plasma is hydrogen, metal oxide can be advantageously removed without damaging the dielectric material.
摘要:
We have discovered a method of providing a thin approximately from about 2 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 μΩ cm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.
摘要翻译:我们已经发现了一种提供大约约2埃至大约100埃的Ta N种子层的薄膜的方法,当钽沉积在Ta上时可用于诱导形成α钽, SUB> N SUB>种子层。 此外,Ta N N种子层在30μΩ·cm的范围内显示低电阻率,并且可以在不存在α钽层的情况下用作低电阻率阻挡层。 在该方法的一个实施方案中,TaN膜在其表面上形成Ta N N种子层。 在该方法的另一个实施方案中,在其表面上改变Ta膜以形成Ta N N种子层。
摘要:
Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.
摘要:
Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.