公开(公告)号：US07662239B2

公开(公告)日：2010-02-16

申请号：US11822903

申请日：2007-07-11

申请人： Keiji Ishibashi ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L21/304 ,  H01L29/30

CPC分类号： H01L21/02013 ,  B24B37/042 ,  H01L21/02027 ,  H01L21/6835 ,  H01L23/544 ,  H01L29/0657 ,  H01L2221/6834 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/00

摘要： Quality of one-surface planar processed group 3 nitride wafers depends upon a direction of pasting of wafers on a polishing plate. Low surface roughness and high yield are obtained by pasting a plurality of group 3 nitride as-grown wafers on a polishing plate with OFs or notches facing forward (f), backward (b) or inward (u) with thermoplastic wax having a thickness of 10 μm or less, grinding the as-grown wafers, lapping the ground wafers, polishing the lapped wafers into mirror wafers with a bevel of a horizontal width of 200 μm or less and a vertical depth of 100 μm or less.

摘要翻译： 单面平面处理组3氮化物晶片的质量取决于晶片在抛光板上的粘贴方向。 通过将多个第3组氮化物生长的晶片粘贴在具有面向前（f），向后（b）或向内（u）的OF或凹槽的抛光板上，获得厚度为 研磨生长的晶片，研磨研磨的晶片，将研磨的晶片抛光成具有200μm或更小的水平宽度和100μm或更小的垂直深度的斜面的镜晶片。

公开(公告)号：US20080272392A1

公开(公告)日：2008-11-06

申请号：US12216236

申请日：2008-07-01

申请人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

IPC分类号： H01L33/00 ,  C01B21/00

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

摘要翻译： 氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线 满足特定平行晶格面的衍射条件，在由d 1的值表示的晶体的表面层上的均匀的畸变-d 2/2 在0.3μm的X射线穿透深度处从平面间隔d 1> 1获得的平面间隔d <2>和在X射线处的平面间隔d 2 <2> 5μm的穿透深度等于或低于2.1×10 -3 -3。 上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底， 含氮化物晶体基板，半导体装置及其制造方法。

公开(公告)号：US20070192058A1

公开(公告)日：2007-08-16

申请号：US11706331

申请日：2007-02-15

申请人： Keiji Ishibashi ,  Noriko Tanaka

发明人： Keiji Ishibashi ,  Noriko Tanaka

IPC分类号： G06F15/00

CPC分类号： G01B11/306

摘要： A method of measuring warpage of a rear surface of a substrate includes a substrate detection step, a best fit plane calculation step, and a warpage calculation step. Further, the method of measuring warpage of a rear surface of a substrate can further includes after the substrate detection step and before the best fit plane calculation step: a noise removal step and an outer peripheral portion removal step; the outer peripheral portion removal step and a smoothing step; or the noise removal step, the outer peripheral portion removal step, and the smoothing step. Thereby, a method of measuring warpage of a rear surface with a high surface roughness of a substrate can be provided.

摘要翻译： 测量基板的后表面的翘曲的方法包括基板检测步骤，最佳拟合平面计算步骤和翘曲计算步骤。 此外，测量基板后表面的翘曲的方法还可以包括在基板检测步骤之后和最佳拟合平面计算步骤之前：噪声去除步骤和外周部分去除步骤; 外周部除去工序和平滑工序; 或噪声去除步骤，外周部分去除步骤和平滑步骤。 因此，可以提供测量具有高基材表面粗糙度的背面的翘曲的方法。

公开(公告)号：US20060281201A1

公开(公告)日：2006-12-14

申请号：US11451298

申请日：2006-06-13

申请人： Akihiro Hachigo ,  Takayuki Nishiura ,  Keiji Ishibashi

发明人： Akihiro Hachigo ,  Takayuki Nishiura ,  Keiji Ishibashi

IPC分类号： H01L21/66 ,  G01R31/26

CPC分类号： G01N21/211

摘要： A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement.

摘要翻译： 1.一种评价化合物半导体部件的损伤的方法，包括：在所述化合物半导体部件的表面上进行光谱椭圆偏光测定的工序; 以及通过使用通过光谱椭圆偏振测量获得的光学常数的光谱，使用包含对应于化合物半导体部件的带隙的波长的波长带中的光谱来评估化合物半导体部件的表面的损伤的步骤。

公开(公告)号：US20060236922A1

公开(公告)日：2006-10-26

申请号：US11405487

申请日：2006-04-18

申请人： Keiji Ishibashi ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Takayuki Nishiura

IPC分类号： C30B25/00 ,  C30B23/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： H01L33/32 ,  C09G1/02 ,  C30B29/403 ,  C30B33/00 ,  C30B35/00 ,  H01L21/02024 ,  H01L24/32 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  Y10T428/24355 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method of surface treatment of a Group III nitride crystal film includes polishing a surface of the Group III nitride crystal film, wherein a pH value x and an oxidation-reduction potential value y (mV) of a polishing liquid used for the polishing satisfy both relationships of y≧−50x+1,000 and y≦−50x+1,900.

摘要翻译： III族氮化物晶体膜的表面处理方法包括对用于研磨的研磨液的pH值x和氧化还原电位值y（mV）满足两者的III族氮化物晶体膜的表面进行研磨 y> = - 50x + 1,000和y <= - 50x + 1,900的关系。

公开(公告)号：US06365009B1

公开(公告)日：2002-04-02

申请号：US09071446

申请日：1998-05-01

申请人： Keiji Ishibashi

发明人： Keiji Ishibashi

IPC分类号： C23C1435

CPC分类号： C23C14/35

摘要： A combined RF-DC magnetron sputtering method stops the production of tracking arcs and promotes the consistent manufacture of thin films during the manufacture of thin films by such RF-DC magnetron sputtering. Magnets 121, 122 are placed behind the target 111. RF and DC power are simultaneously supplied to the target to produce a plasma, and sputtering is used to manufacture a thin film on a substrate 106 facing the target. The supply of RF and DC power to the target is simultaneously and periodically stopped. The time that the power is supplied is shorter than the time needed to produce tracking arcs. The RF and DC power is both supplied and stopped simultaneously, and RF and DC power is intermittently supplied to the target.

摘要翻译： 组合的RF-DC磁控溅射法通过这种RF-DC磁控溅射在薄膜制造过程中停止生产跟踪电弧并促进薄膜的一致制造。 将磁体121,122放置在目标111的后面。将RF和DC功率同时提供给靶以产生等离子体，并且使用溅射来在面向靶的衬底106上制造薄膜。 同时定期停止向目标提供射频和直流电源。 供电时间短于产生跟踪弧所需的时间。 RF和DC电源同时供电和停止，RF和DC电源间歇地提供给目标。

公开(公告)号：US06218392B1

公开(公告)日：2001-04-17

申请号：US09161946

申请日：1998-09-29

申请人： Nobuhisa Watanabe ,  Yasuhiro Kabasawa ,  Yasutaka Takase ,  Fumihiro Ozaki ,  Keiji Ishibashi ,  Kazuki Miyazaki ,  Masayuki Matsukura ,  Shigeru Souda ,  Kazutoshi Miyake ,  Hiroki Ishihara ,  Kohtaro Kodama ,  Hideyuki Adachi

发明人： Nobuhisa Watanabe ,  Yasuhiro Kabasawa ,  Yasutaka Takase ,  Fumihiro Ozaki ,  Keiji Ishibashi ,  Kazuki Miyazaki ,  Masayuki Matsukura ,  Shigeru Souda ,  Kazutoshi Miyake ,  Hiroki Ishihara ,  Kohtaro Kodama ,  Hideyuki Adachi

IPC分类号： A61K31502

CPC分类号： C07D231/12 ,  C07D233/56 ,  C07D237/34 ,  C07D249/08 ,  C07D401/04 ,  C07D401/06 ,  C07D401/12 ,  C07D401/14 ,  C07D403/04 ,  C07D403/12 ,  C07D405/12 ,  C07D405/14 ,  C07D471/04

摘要： A fused pyridazine compound represented by the following general formula (I) or a pharmacologically acceptable salt thereof which exhibits an inhibitory activity against cyclic GMP phosphodiesterase (hereinafter referred to as “cGMP-PDE”). The compounds are useful as preventive and therapeutic agents for diseases for which a cGMP-PDE inhibiting action is efficacious, for example, ischemic heart diseases such as angina pectoris, myocardial infarct and chronic and acute cardiac failure, pulmonary hypertension, arteriosclerosis and bronchial asthma.

摘要翻译： 由下述通式（I）表示的稠合哒嗪化合物或其对环状GMP磷酸二酯酶具有抑制活性的药理学上可接受的盐（以下称为“cGMP-PDE”），可用作预防和治疗剂 cGMP-PDE抑制作用有效的疾病，例如心绞痛，心肌梗死，慢性和急性心力衰竭，肺动脉高压，动脉硬化和支气管哮喘等缺血性心脏病。

公开(公告)号：US5498634A

公开(公告)日：1996-03-12

申请号：US380589

申请日：1995-01-30

申请人： Yasuhiro Kabasawa ,  Fumihiro Ozaki ,  Keiji Ishibashi ,  Takashi Hasegawa ,  Hitoshi Oinuma ,  Toshiaki Ogawa ,  Hideyuki Adachi ,  Hiroshi Katoh ,  Kohtarou Kodama ,  Hideto Ohara ,  Nobuyuki Mori ,  Norio Minami

发明人： Yasuhiro Kabasawa ,  Fumihiro Ozaki ,  Keiji Ishibashi ,  Takashi Hasegawa ,  Hitoshi Oinuma ,  Toshiaki Ogawa ,  Hideyuki Adachi ,  Hiroshi Katoh ,  Kohtarou Kodama ,  Hideto Ohara ,  Nobuyuki Mori ,  Norio Minami

IPC分类号： C07D231/12 ,  C07D233/92 ,  C07D233/95 ,  C07D471/04 ,  A61K31/35 ,  C07D309/08

CPC分类号： C07D233/92 ,  C07D471/04

摘要： The present invention provides a thioformamide derivative represented by the following general formula (I) or a pharmacologically acceptable salt thereof, which is highly safe, easy to use, and useful as an excellent hypotensive or heart disease remedy: ##STR1## wherein Y represents ##STR2## or the like [wherein R.sup.7 represents benzyloxy or the like; R.sup.11 and R.sup.12 each represent hydrogen, hydroxyl, benzoyloxy, benzyloxy, ##STR3## (wherein R.sup.14 and R.sup.15 each represent hydrogen, benzyl or the like) or the like];Z represents --CH.sub.2 -- or the like; A represents imidazolyl or imidazopyridyl which may have one or two substituents, or the like; R.sup.1 and R.sup.2 each represent hydrogen, lower alkyl or the like; and R.sup.3 and R.sup.4 each represent hydrogen, lower alkyl or the like.

摘要翻译： 本发明提供由下列通式（I）表示的硫代甲酰胺衍生物或其药学上可接受的盐，其安全性高，易于使用，可用作优异的降血压或心脏病治疗药物：其中 Y表示 等[其中R7表示苄氧基等; R 11和R 12各自表示氢，羟基，苯甲酰氧基，苄氧基，（其中R 14和R 15各自表示氢，苄基等）等。 Z表示-CH 2 - 等; A表示可具有一个或两个取代基的咪唑基或咪唑并吡啶等; R 1和R 2各自表示氢，低级烷基等; R 3和R 4各自表示氢，低级烷基等。

公开(公告)号：US5478839A

公开(公告)日：1995-12-26

申请号：US300201

申请日：1994-09-02

申请人： Yasuhiro Kabasawa ,  Fumihiro Ozaki ,  Keiji Ishibashi ,  Takashi Hasegawa ,  Hitoshi Oinuma ,  Manabu Shirato ,  Katsuhiro Moriya ,  Toshiaki Ogawa ,  Satoshi Katayama ,  Shigeru Souda

发明人： Yasuhiro Kabasawa ,  Fumihiro Ozaki ,  Keiji Ishibashi ,  Takashi Hasegawa ,  Hitoshi Oinuma ,  Manabu Shirato ,  Katsuhiro Moriya ,  Toshiaki Ogawa ,  Satoshi Katayama ,  Shigeru Souda

IPC分类号： C07C13/18 ,  A61K31/015 ,  A61K31/13 ,  A61P21/00 ,  C07C327/46 ,  C07D471/04 ,  C07D521/00 ,  A61K31/435

CPC分类号： C07D231/12 ,  C07D233/56 ,  C07D249/08 ,  C07D471/04

摘要： To provide a cyclohexane derivative defined by the formula (I) or a pharmacologically acceptable salt thereof: ##STR1## (wherein R.sup.1 and R.sup.2 may be the same or different from each other and each represents hydrogen or lower alkyl; R.sup.3 represents optionally substituted aryl or optionally substituted heteroaryl; X represents oxygen or sulfur; and Y represents a group represented by the formula: ##STR2## or the like). The compound of the present invention is useful as a preventive and therapeutic agent for diseases against which a potassium channel opening action is efficacious.

摘要翻译： 提供由式（I）定义的环己烷衍生物或其药理学上可接受的盐：其中R 1和R 2可以彼此相同或不同，各自表示氢或低级烷基; R 3表示任选地 取代的芳基或任选取代的杂芳基; X表示氧或硫; Y表示由下式表示的基团：所发明的发明可用作钾通道开放作用有效的疾病的预防和治疗剂。

公开(公告)号：US5430059A

公开(公告)日：1995-07-04

申请号：US169500

申请日：1993-12-20

申请人： Norio Minami ,  Fumihiro Ozaki ,  Keiji Ishibashi ,  Yasuhiro Kabasawa ,  Toshiaki Ogawa ,  Hideyuki Adachi ,  Takanori Kawamura

发明人： Norio Minami ,  Fumihiro Ozaki ,  Keiji Ishibashi ,  Yasuhiro Kabasawa ,  Toshiaki Ogawa ,  Hideyuki Adachi ,  Takanori Kawamura

IPC分类号： C07C275/42 ,  C07C279/24 ,  C07C279/28 ,  C07C279/36 ,  C07C323/27 ,  C07C335/22 ,  C07D213/56 ,  C07D213/64 ,  C07D213/68 ,  C07D213/89 ,  C07D233/08 ,  C07D233/28 ,  C07D233/88 ,  C07D233/95 ,  C07D239/46 ,  C07D405/04 ,  C07D409/04 ,  C07D521/00 ,  A61K31/17 ,  A61K31/16 ,  A61K31/165 ,  C07C273/00 ,  C07C275/00 ,  C07C335/00

CPC分类号： C07C275/42 ,  C07C279/24 ,  C07C279/28 ,  C07C279/36 ,  C07C323/27 ,  C07C335/22 ,  C07D213/56 ,  C07D213/64 ,  C07D213/68 ,  C07D213/89 ,  C07D231/12 ,  C07D233/08 ,  C07D233/28 ,  C07D233/56 ,  C07D233/88 ,  C07D233/95 ,  C07D239/47 ,  C07D249/08 ,  C07D405/04 ,  C07D409/04

摘要： A butenoic acid compound of the following formula: ##STR1## in which Z is O, S, vinylene or azomethyne, A is an alkylene group and J is phenyl group, is a useful in treating heart disease.

摘要翻译： 下式的丁烯酸化合物：其中Z为O，S，亚乙烯基或偶氮甲炔的A为亚烷基，J为苯基，可用于治疗心脏病。