摘要:
A manufacturing method of a silicon carbide semiconductor apparatus is provided. The method includes forming a first resist pattern on a surface of a silicon carbide layer formed on a silicon carbide substrate, implanting a first conduction type impurity ion in the silicon carbide layer on which the first resist pattern is formed, forming a second resist pattern by decreasing a width of the first resist pattern with etching and forming a deposition layer on the surface of the silicon carbide layer which is not covered with the second resist pattern, and implanting a second conduction type impurity ion in the silicon carbide layer on which the second resist pattern is formed, through the deposition layer.
摘要:
A movable grille shutter for a vehicle includes a fin adapted to be provided at a grille opening portion and being operated so as to freely open or close the grille opening portion through which ambient air is taken in, a drive source for driving the fin, a driving force transmitting mechanism for transmitting a driving force from the drive source to the fin and a flexible member being linked to the driving force transmitting mechanism and being deformed for operating the fin to open the grille opening portion in a case where a load that is equal to or more than a predetermined value is acted thereon.
摘要:
When application software running on a PC is in the state of being terminated, a switch unit is turned OFF with the control of a CPU and individual motors, and in this state, a light source is not supplied with a motor/lamp-use power source. In this state, however, the CPU and individual I/Fs are supplied with a logic-use power source. Therefore, the switch unit is turned ON when the application software is started, and an initialization process for an individual electrically driven unit is no longer required.
摘要:
Object is to provide a surface-treated copper foil free from chromium in the surface-treatment layer and excellent in peel strength of a circuit and chemical resistance against to degradation of the peel strength after processing into a printed wiring board. To achieve the object, the surface-treated copper foil having a surface-treatment layer on a bonding surface of a copper foil for manufacturing a copper-clad laminate by laminating it to an insulating resin substrate has the surface-treatment layer formed by depositing a metal component having high melting point not lower than 1400° C. by dry process film formation method to the bonding surface of the copper foil after the cleaning treatment and further depositing a carbon component to the surface.
摘要:
A select gate transistor has a select gate electrode composed of a first-level conductive layer and a second-level conductive layer. The first-level conductive layer has contact areas. The second-level conductive layer has its portions removed that are located above the contact areas. Two adjacent select gate electrodes that are adjacent to each other in the column direction are arranged such that the contact areas of one select gate electrode are not opposed to the contact areas of the other select gate electrode. One select gate electrode has its first- and second-level conductive layers removed in their portions that are opposed to the contact areas of the other select gate electrode.
摘要:
An automatic analyzing apparatus has an analysis section including an immunity analysis unit and a biochemical componential analysis unit. A sample rack which has undergone the immunity componential analysis is horizontally fed by a rack feeding mechanism from a position confronting the inlet of a rack stationing section to a position near the outlet of the rack stationing section, so that the sample rack is directly moved to a return line, while skipping over the rack stationing section, so as to be efficiently returned to the analysis section and subjected to a subsequent biochemical analysis. A sample rack that needs reexamination by an identical analysis unit is also returned in the same efficient way.
摘要:
In a termination structure in which a JTE layer is provided, a level or defect existing at an interface between a semiconductor layer and an insulating film, or a minute amount of adventitious impurities that infiltrate into the semiconductor interface from the insulating film or from an outside through the insulating film becomes a source or a breakdown point of a leakage current, which deteriorates a breakdown voltage. A semiconductor device includes: an n− type semiconductor layer formed on an n+ type semiconductor substrate; a first electrode that is formed on the n− type semiconductor layer and functions as a Schottky electrode; a GR layer that is a first p type semiconductor layer formed on a surface of the n− type semiconductor layer below an end of the first electrode and a perimeter thereof; a JTE layer that is formed of a second p type semiconductor layer formed on a bottom and a lateral surface of a groove arranged in a ring shape around the GR layer apart from the GR layer, in a surface of the n− typesemiconductor layer; an insulating film provided so as to cover the GR layer and the JTE layer; and a second electrode that is an Ohmic electrode formed below a rear surface of the n+ type semiconductor substrate.
摘要:
According to an aspect of the present invention, there is provided a radio system including: a first radio apparatus that has a first loop antenna; and a second radio apparatus that has a second loop antenna and that performs a radio communication with the first radio apparatus when the second loop antenna is opposed with the first loop antenna, wherein the second radio apparatus has a shield member that is formed of a magnetic substance and disposed to shield at least a portion of the second loop antenna with respect to the first loop antenna when the radio communication is performed.
摘要:
Time-switch carrying removable storage includes a memory cell array, a bit line decoder connected with bit lines of the memory cell array, a word line decoder connected with word lines of the memory cell array, a bit line system amplifier connected with the bit line decoder, a word line system amplifier connected with the word line decoder, a semiconductor time switch clamped or bridged between the bit line system amplifier and the bit line decoder, and performing time management of access of the bit line amplifier and the bit line decoder to/from each other without a power supply, a time switch initializer which sets an operation period of the semiconductor time switch, and a controller connected with the bit line system amplifier and the word line system amplifier to control the amplifiers, and having an I/O terminal which transmits/receives an input/output signal.
摘要:
Mounting port, provided adjacent to a cooling water passageway, has a hole opening from the passageway for mounting an anode metal in the passageway. Lid member, which closes the outer end of the hole, has a head portion formed at its outer end and an externally threaded portion engageable with an internally threaded portion of the hole with a sealing member sandwiched therebetween. The lid member having the anode metal fixed thereto is inserted in and attached to the port with the threaded portions engaging with each other with a sealing tape sandwiched therebetween. Space is defined between an outer end portion of the port and an outer end portion of the lid member between the head portion and the externally threaded portion so that part of the sealing member protruding from between the threaded portions can be received in the space.