公开(公告)号：US20100081097A1

公开(公告)日：2010-04-01

申请号：US12636648

申请日：2009-12-11

申请人： Koji Kaneyama ,  Kazuhito Shigemori ,  Akiko Harumoto ,  Tadashi Miyagi

发明人： Koji Kaneyama ,  Kazuhito Shigemori ,  Akiko Harumoto ,  Tadashi Miyagi

IPC分类号： G03F7/20

CPC分类号： G03D7/00 ,  G03F7/11 ,  G03F7/2041 ,  H01L21/0206 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67225 ,  H01L21/67742

摘要： A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, a cleaning/drying processing block and an interface block. These blocks are arranged in the substrate processing apparatus in the above order. An exposure device is arranged adjacent to the interface block of the substrate processing apparatus. A hydrophobic processing unit is arranged in the resist cover film processing block and applies hydrophobic processing to the substrate before exposure processing.

摘要翻译： 基板处理装置包括分度器块，抗反射膜处理块，抗蚀剂膜处理块，显影处理块，抗蚀剂覆盖膜处理块，抗蚀剂覆盖膜去除块，清洁/干燥处理块和 界面块 这些块按照上述顺序排列在基板处理装置中。 曝光装置被布置成与基板处理装置的界面块相邻。 在抗蚀剂覆盖膜处理块中设置疏水处理单元，在曝光处理之前对基板进行疏水处理。

公开(公告)号：US09375748B2

公开(公告)日：2016-06-28

申请号：US13943198

申请日：2013-07-16

申请人： Masahiko Harumoto ,  Tadashi Miyagi ,  Yukihiko Inagaki ,  Koji Kaneyama

发明人： Masahiko Harumoto ,  Tadashi Miyagi ,  Yukihiko Inagaki ,  Koji Kaneyama

IPC分类号： G03D5/00 ,  B05C11/00 ,  H01J37/02 ,  H01L21/033 ,  H01L21/67 ,  G03F7/00 ,  G03F7/16 ,  G03F7/30

CPC分类号： C23C16/56 ,  B05C11/00 ,  C23C16/0227 ,  G03F7/0002 ,  G03F7/162 ,  G03F7/20 ,  G03F7/3021 ,  G03F7/32 ,  H01J37/02 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/67115 ,  H01L21/67126 ,  H01L21/6715 ,  H01L21/67178

摘要： An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

摘要翻译： 形成底层以覆盖基板的上表面，并且在底层上形成引导图案。 在未形成引导图案的底层上的区域中形成由两种类型的聚合物构成的DSA膜。 在向基板上的DSA膜供给溶剂的同时进行热处理。 因此，发生DSA膜的微相分离。 结果，形成由一种聚合物制成的图案和由另一种聚合物制成的图案。 在微相分离之后，在DSA膜上依次进行曝光处理和显影处理，从而除去由另一种聚合物制成的图案。

公开(公告)号：US20090070946A1

公开(公告)日：2009-03-19

申请号：US12211549

申请日：2008-09-16

申请人： Osamu Tamada ,  Masakazu Sanada ,  Tadashi Miyagi ,  Shuichi Yasuda

发明人： Osamu Tamada ,  Masakazu Sanada ,  Tadashi Miyagi ,  Shuichi Yasuda

IPC分类号： B08B3/04 ,  B08B3/12

CPC分类号： B08B3/02 ,  B08B2203/0288 ,  H01L21/67051

摘要： A cleaning processing part including an edge cleaning processing unit for cleaning an edge of a substrate is provided in an indexer block. An indexer robot provided in the indexer block transports an unprocessed substrate taken out of a cassette to the cleaning processing part before transporting the unprocessed substrate to an anti-reflection film processing block serving as a processor. The cleaning processing part cleans an edge and a back surface of a substrate.

摘要翻译： 在分度块中设置有包括用于清洁基板的边缘的边缘清洁处理单元的清洁处理部。 设置在分度器块中的分度器机器人将将未处理的基板输送到用作处理器的防反射膜处理块之前，将从盒中取出的未处理基板输送到清洁处理部。 清洁处理部件清洁基板的边缘和背面。

公开(公告)号：US08286576B2

公开(公告)日：2012-10-16

申请号：US12242296

申请日：2008-09-30

申请人： Osamu Tamada ,  Masakazu Sanada ,  Tadashi Miyagi

发明人： Osamu Tamada ,  Masakazu Sanada ,  Tadashi Miyagi

IPC分类号： B05C11/02 ,  B05C11/00 ,  B05B1/28 ,  C23C16/00

CPC分类号： H01L21/6715 ,  G03F7/16

摘要： A thermal processing unit of a thermal processor for anti-reflection films includes: a covering nozzle for covering a substrate from above supported by a thermal processing plate and discharging an adhesion enhancing agent to a periphery of a substrate supported by the thermal processing plate; and a vaporization processor for supplying an adhesion enhancing agent in the vapor phase to the covering nozzle. While a substrate placed over the thermal processing plate is being subjected to thermal process, a control part causes the covering nozzle to discharge an adhesion enhancing agent in the vapor phase onto a periphery of a substrate to realize adhesion enhancement process. Thus, the adhesion between a resist coating film and a substrate surface in the periphery of a substrate is enhanced. Further, parallel implementation of thermal process and adhesion enhancement process exerts no influence on throughput.

摘要翻译： 用于防反射膜的热处理器的热处理单元包括：覆盖喷嘴，用于从由热处理板支撑的上方覆盖基板，并将粘附增强剂排放到由热处理板支撑的基板的周边; 以及用于将气相中的粘附增强剂供给到覆盖喷嘴的蒸发处理器。 当放置在热处理板上的基板经受热处理时，控制部分使得覆盖喷嘴将气相中的粘附增强剂排出到基板的周边上，以实现粘附增强过程。 因此，增强了抗蚀剂涂膜与基板周边的基板表面之间的粘合性。 此外，热处理和附着增强过程的并行实施对生产量没有影响。

公开(公告)号：US20090269936A1

公开(公告)日：2009-10-29

申请号：US12242296

申请日：2008-09-30

申请人： Osamu Tamada ,  Masakazu Sanada ,  Tadashi Miyagi

发明人： Osamu Tamada ,  Masakazu Sanada ,  Tadashi Miyagi

IPC分类号： H01L21/302 ,  B05B12/04

CPC分类号： H01L21/6715 ,  G03F7/16

摘要： A thermal processing unit of a thermal processor for anti-reflection films includes: a covering nozzle for covering a substrate from above supported by a thermal processing plate and discharging an adhesion enhancing agent to a periphery of a substrate supported by the thermal processing plate; and a vaporization processor for supplying an adhesion enhancing agent in the vapor phase to the covering nozzle. While a substrate placed over the thermal processing plate is being subjected to thermal process, a control part causes the covering nozzle to discharge an adhesion enhancing agent in the vapor phase onto a periphery of a substrate to realize adhesion enhancement process. Thus, the adhesion between a resist coating film and a substrate surface in the periphery of a substrate is enhanced. Further, parallel implementation of thermal process and adhesion enhancement process exerts no influence on throughput.

摘要翻译： 用于防反射膜的热处理器的热处理单元包括：覆盖喷嘴，用于从由热处理板支撑的上方覆盖基板，并将粘附增强剂排放到由热处理板支撑的基板的周边; 以及用于将气相中的粘附增强剂供给到覆盖喷嘴的蒸发处理器。 当放置在热处理板上的基板经受热处理时，控制部分使得覆盖喷嘴将气相中的粘附增强剂排出到基板的周边上，以实现粘附增强过程。 因此，增强了抗蚀剂涂膜与基板周边的基板表面之间的粘合性。 此外，热处理和附着增强过程的并行实施对生产量没有影响。

公开(公告)号：US06180320B2

公开(公告)日：2001-01-30

申请号：US09371499

申请日：1999-08-10

申请人： Takayuki Saito ,  Takeo Ishibashi ,  Toshiyuki Toyoshima ,  Kanji Sugino ,  Naoki Yasuda ,  Tadashi Miyagi

发明人： Takayuki Saito ,  Takeo Ishibashi ,  Toshiyuki Toyoshima ,  Kanji Sugino ,  Naoki Yasuda ,  Tadashi Miyagi

IPC分类号： G03F7039

CPC分类号： G03F7/40 ,  H01L21/0274 ,  H01L21/0338

摘要： There is described a method of stably manufacturing a fine resist pattern narrower than the wavelength of exposing light from a stepper. Under the method, a resist pattern is formed on a semiconductor substrate through use of an acid catalyst chemically-amplified photoresist, and an organic film which includes an acid or which produces an acid on exposure to light is formed on the surface of the semiconductor substrate including the resist pattern. The organic film is then subjected to a heat treatment to thereby diffuse an acid. The surface layer of the resist pattern is made soluble in an alkaline developer, and the surface layer of the resist pattern is removed through use of the alkaline developer. As a result, a fine resist pattern is formed.

摘要翻译： 描述了一种稳定地制造比曝光来自步进器的光的波长窄的精细抗蚀剂图案的方法。 在该方法下，通过使用酸催化剂化学扩增的光致抗蚀剂在半导体衬底上形成抗蚀剂图案，并且在半导体衬底的表面上形成包含酸或在曝光时产生酸的有机膜 包括抗蚀剂图案。 然后对有机膜进行热处理，从而扩散酸。 抗蚀剂图案的表面层可溶于碱性显影剂，通过使用碱性显影剂除去抗蚀剂图案的表面层。 结果，形成精细的抗蚀剂图案。

公开(公告)号：US09028621B2

公开(公告)日：2015-05-12

申请号：US13116793

申请日：2011-05-26

申请人： Tadashi Miyagi ,  Masahiko Harumoto ,  Sadayasu Suyama

发明人： Tadashi Miyagi ,  Masahiko Harumoto ,  Sadayasu Suyama

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01L21/67028 ,  H01L21/02052 ,  H01L21/67051

摘要： A substrate rotates, and a liquid nozzle of a gas/liquid supply nozzle moves to a position above the center of the rotating substrate. In this state, a rinse liquid is discharged from the liquid nozzle onto the rotating substrate. The gas/liquid supply nozzle moves toward a position outside the substrate. A gas nozzle reaches the position above the center of the rotating substrate, so that the gas/liquid supply nozzle temporarily stops. With the gas/liquid supply nozzle stopping, an inert gas is discharged onto the center of the rotating substrate for a given period of time. After that, the gas/liquid supply nozzle again moves toward the position outside the substrate.

摘要翻译： 基板旋转，气/液供给喷嘴的液体喷嘴移动到旋转基板的中心上方的位置。 在该状态下，将冲洗液从液体喷嘴排出到旋转基板上。 气体/液体供给喷嘴朝向基板外侧的位置移动。 气体喷嘴到达旋转基板的中心上方的位置，使气/液供给喷嘴临时停止。 在气/液供给喷嘴停止的情况下，将惰性气体排出到旋转基板的中心一定时间。 之后，气体/液体供给喷嘴再次朝向基板外侧的位置移动。

公开(公告)号：US20130109123A1

公开(公告)日：2013-05-02

申请号：US13808371

申请日：2011-07-06

申请人： Toshiro Morita ,  Takashi Kamizono ,  Tadashi Miyagi

发明人： Toshiro Morita ,  Takashi Kamizono ,  Tadashi Miyagi

IPC分类号： H01L31/18

CPC分类号： H01L31/18 ,  H01L21/2225 ,  H01L21/2254 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Provided is a diffusing agent composition used for the printing of a dopant component on a semiconductor substrate, the diffusing agent composition including a silicon compound (A), a dopant component (B), and a non-dopant metal component (C). Among these components, the content of Na contained as the non-dopant metal component (C) is less than 60 ppb relative to the total amount of the composition.

摘要翻译： 提供了用于在半导体衬底上印刷掺杂剂组分的扩散剂组合物，该扩散剂组合物包括硅化合物（A），掺杂剂组分（B）和非掺杂剂金属组分（C）。 在这些成分中，作为非掺杂剂金属成分（C）的Na含量相对于组合物的总量小于60ppb。

公开(公告)号：US06514122B2

公开(公告)日：2003-02-04

申请号：US09773497

申请日：2001-02-02

申请人： Takayuki Saito ,  Tadashi Miyagi ,  Takuya Matsushita

发明人： Takayuki Saito ,  Tadashi Miyagi ,  Takuya Matsushita

IPC分类号： B24D4900

CPC分类号： G03F7/70258 ,  G03F7/70641 ,  G03F9/7026

摘要： A product pattern and a test pattern for managing a focus offset value are patterned onto a product wafer by means of exposure, and is patterned onto the product wafer by means of exposure. The exposed product wafer is developed. A measurement section measures the dimension of the test pattern patterned on the product wafer. On the basis of the thus-measured dimension of the test pattern, the focus off set value set in a system for manufacturing a semiconductor device is computed by a computation section. The focus offset value set in a projection optical system of the system for manufacturing a semiconductor device is adjusted by means of an adjustment section so as to become identical with the computed focus offset value.

摘要翻译： 通过曝光将产品图案和用于管理聚焦偏移值的测试图案图案化到产品晶片上，并通过曝光将其图案化到产品晶片上。 曝光的产品晶片被开发出来。 测量部分测量在产品晶片上图案化的测试图案的尺寸。 基于这样测量的测试尺寸的尺寸，通过计算部分计算用于制造半导体器件的系统中设定的聚焦设定值。 通过调整部调整用于制造半导体器件的系统的投影光学系统中设置的聚焦偏移值，使其与计算出的聚焦偏移值相同。

公开(公告)号：US06217319B1

公开(公告)日：2001-04-17

申请号：US09088702

申请日：1998-06-02

申请人： Tadashi Miyagi ,  Yoshiaki Yamada ,  Takayuki Saito

发明人： Tadashi Miyagi ,  Yoshiaki Yamada ,  Takayuki Saito

IPC分类号： F27B516

CPC分类号： H01L21/67115 ,  H01L21/67109

摘要： A hot plate unit includes a cover. The cover includes an inner wall and an outlet. There is provided immediately under the outlet a plate having a ventilation hole. The distance between the plate and a main surface is identical to the distance between the main surface and the internal wall face. The hot plate unit has an displacement control valve for restricting displacement at a level in the range from at least 0.1 L/min to at most 1 L/min.

摘要翻译： 热板单元包括盖。 盖子包括内壁和出口。 在出口的正下方设有具有通风孔的板。 板和主表面之间的距离与主表面和内壁面之间的距离相同。 热板单元具有位移控制阀，用于将位移限制在从至少0.1L / min至至多1L / min的范围内的水平。