公开(公告)号：US12040180B2

公开(公告)日：2024-07-16

申请号：US17291605

申请日：2019-10-08

Applicant: Lam Research Corporation

Inventor： Pramod Subramonium ,  Nagraj Shankar ,  Malay Milan Samantaray ,  Katsunori Yoshizawa ,  Bart J. VanSchravendijk

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

CPC classification number: H01L21/02274 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/76802 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

Abstract: A method for depositing a nitride layer over an oxide layer to form an oxide-nitride stack is provided. The method includes supplying an inert gas to a plasma enhanced chemical vapor deposition (PECVD) reactor that supports a substrate having said oxide layer. Then, providing power to an electrode of the PECVD reactor, where the power is configured to strike a plasma. Then, flowing reactant gases into the PECVD reactor. The reactant gases include a first percentage by volume of ammonia (NH3), a second percentage by volume of nitrogen (N2), a third percentage by volume of silane (SiH4) and a fourth percentage by volume of an oxidizer. The fourth percentage by volume of said oxidizer is at least 0.5 percent by volume and less than about 8 percent by volume. Then, continuing to flow the reactant gases into the PECVD reactor until the nitride layer is determined to achieve a target thickness over the oxide layer.

公开(公告)号：US11859282B2

公开(公告)日：2024-01-02

申请号：US17874188

申请日：2022-07-26

Applicant: Lam Research Corporation

Inventor： Damodar Rajaram Shanbhag ,  Nagraj Shankar

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/52 ,  F16K27/00

CPC classification number: C23C16/455 ,  C23C16/52 ,  F16K27/003 ,  H01J37/3244 ,  H01J37/32431

Abstract: Various embodiments include an apparatus to supply gases to a tool. In various examples, the apparatus includes a point-of-use (POU) valve manifold that includes a manifold body to couple to a chamber of the tool. The manifold body has multiple gas outlet ports. A purge-gas outlet port of the manifold body is directed substantially toward the outlet ports. For each of multiple gases to be input to the POU-valve manifold, the POU-valve manifold further includes: a first valve coupled to the manifold body and a divert valve coupled to the first valve. The first valve can be coupled to a gas supply and has a separate gas flow path internal to the manifold body and separate from remaining ones of the gas flow paths. The divert valve diverts the gas during a period when the precursor gas is not to be directed into the chamber by the first valve. Other examples are disclosed.

公开(公告)号：US10998187B2

公开(公告)日：2021-05-04

申请号：US16713557

申请日：2019-12-13

Applicant: Lam Research Corporation

Inventor： Kapu Sirish Reddy ,  Meliha Gozde Rainville ,  Nagraj Shankar ,  Dennis M. Hausmann ,  David Charles Smith ,  Karthik Sivaramakrishnan ,  David W. Porter

IPC: H01L21/02 ,  H01L21/67 ,  C23C16/455 ,  C23C16/52 ,  C23C16/04 ,  H01L21/311 ,  C23C16/54 ,  C23C16/30 ,  C23C16/505 ,  C23F1/02 ,  C23F1/08

Abstract: Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.

公开(公告)号：US10804144B2

公开(公告)日：2020-10-13

申请号：US16852119

申请日：2020-04-17

Applicant: Lam Research Corporation

Inventor： Meliha Gozde Rainville ,  Nagraj Shankar ,  Kapu Sirish Reddy ,  Dennis M. Hausmann

IPC: H01L21/302 ,  H01L21/768 ,  C23C16/52 ,  H01L23/532 ,  C23C16/40 ,  H01J37/32 ,  H01L21/311 ,  C23C16/455 ,  H01L21/02 ,  C23C22/05

Abstract: Aluminum oxide films with a thickness of between about 10-50 Å, characterized by a dielectric constant (k) of less than about 7 (such as about 4-6) and having a density of at least about 2.5 g/cm3 (such as about 3.0-3.2 g/cm3) are deposited on partially fabricated semiconductor devices over a metal (e.g., cobalt or copper) such that the metal does not show signs of oxidation. In some embodiments, the films are etch stop films.

公开(公告)号：US10651080B2

公开(公告)日：2020-05-12

申请号：US15195539

申请日：2016-06-28

Applicant: Lam Research Corporation

Inventor： Meliha Gozde Rainville ,  Nagraj Shankar ,  Daniel Damjanovic ,  Kapu Sirish Reddy

IPC: H01L21/00 ,  H01L21/768 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  H01L21/033

Abstract: Thin AlN films are oxidatively treated in a plasma to form AlO and AlON films without causing damage to underlying layers of a partially fabricated semiconductor device (e.g., to underlying metal and/or dielectric layers). The resulting AlO and AlON films are characterized by improved leakage current compared to the AlN film and are suitable for use as etch stop layers. The oxidative treatment involves contacting the substrate having an exposed AlN layer with a plasma formed in a process gas comprising an oxygen-containing gas and a hydrogen-containing gas. In some implementations oxidative treatment is performed with a plasma formed in a process gas including CO2 as an oxygen-containing gas, H2 as a hydrogen-containing gas, and further including a diluent gas. The use of a hydrogen-containing gas in the plasma eliminates the oxidative damage to the underlying layers.

公开(公告)号：US20200063261A1

公开(公告)日：2020-02-27

申请号：US16672364

申请日：2019-11-01

Applicant: Lam Research Corporation

Inventor： Nagraj Shankar ,  Jeffrey D. Womack ,  Meliha Gozde Rainville ,  Emile C. Draper ,  Pankaj G. Ramnani ,  Feng Bi ,  Pengyi Zhang ,  Elham Mohimi ,  Kapu Sirish Reddy

IPC: C23C16/455 ,  H01L21/02

Abstract: Showerheads for independently delivering different, mutually-reactive process gases to a wafer processing space are provided. The showerheads include a first gas distributor that has multiple plenum structures that are separated from one another by a gap, as well as a second gas distributor positioned above the first gas distributor. Isolation gas from the second gas distributor may be flowed down onto the first gas distributor and through the gaps in between the plenum structures of the first gas distributor, thereby establishing an isolation gas curtain that prevents the process gases released from each plenum structure from parasitically depositing on the plenum structures that provide other gases.

公开(公告)号：US20190341256A1

公开(公告)日：2019-11-07

申请号：US15972918

申请日：2018-05-07

Applicant: Lam Research Corporation

Inventor： Nagraj Shankar ,  Kapu Sirish Reddy ,  Jon Henri ,  Pengyi Zhang ,  Elham Mohimi ,  Bhavin Jariwala ,  Arpan Pravin Mahorowala

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/311 ,  H01L21/02

Abstract: Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.

公开(公告)号：US10418236B2

公开(公告)日：2019-09-17

申请号：US16037932

申请日：2018-07-17

Applicant: Lam Research Corporation

Inventor： Kapu Sirish Reddy ,  Nagraj Shankar ,  Shankar Swaminathan ,  Meliha Gozde Rainville ,  Frank L. Pasquale

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  C23C16/40 ,  C23C16/455

Abstract: Dielectric composite films characterized by a dielectric constant (k) of less than about 7 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers. The dielectric composite film in one embodiment includes Al, Si, and O and has a thickness of between about 10-100 Å. The dielectric composite film can reside between two layers of inter-layer dielectric, and may be in contact with metal layers. An apparatus for depositing such dielectric composite films includes a process chamber, a conduit for delivering an aluminum containing precursor to the process chamber, a second conduit for delivering a silicon-containing precursor to the process chamber and a controller having program instructions for depositing the dielectric composite film from these precursors, e.g., by reacting the precursors adsorbed to the substrate with an oxygen-containing species.

公开(公告)号：US20180197770A1

公开(公告)日：2018-07-12

申请号：US15821097

申请日：2017-11-22

Applicant: Lam Research Corporation

Inventor： Meliha Gozde Rainville ,  Nagraj Shankar ,  Kapu Sirish Reddy ,  Dennis M. Hausmann

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/02 ,  C23C22/05 ,  H01L23/532

Abstract: Aluminum oxide films characterized by a dielectric constant (k) of less than about 7 (such as between about 4-6) and having a density of at least about 2.5 g/cm3 (such as about 3.0-3.2 g/cm3) are deposited on partially fabricated semiconductor devices over both metal and dielectric to serve as etch stop layers. The films are deposited using a deposition method that does not lead to oxidative damage of the metal. The deposition involves reacting an aluminum-containing precursor (e.g., a trialkylaluminum) with an alcohol and/or aluminum alkoxide. In one implementation the method involves flowing trimethylaluminum to the process chamber housing a substrate having an exposed metal and dielectric layers; purging and/or evacuating the process chamber; flowing t-butanol to the process chamber and allowing it to react with trimethylaluminum to form an aluminum oxide film and repeating the process steps until the film of desired thickness is formed.

公开(公告)号：US10002787B2

公开(公告)日：2018-06-19

申请号：US15408291

申请日：2017-01-17

Applicant: Lam Research Corporation

Inventor： Yongsik Yu ,  Bart J. van Schravendijk ,  Nagraj Shankar ,  Bhadri N. Varadarajan

IPC: H01L21/768 ,  H01L23/528 ,  H01L21/56 ,  H01L21/02 ,  H01L21/311 ,  H01L27/11551 ,  H01L27/11578 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76816 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/56 ,  H01L21/76834 ,  H01L23/3157 ,  H01L27/11575 ,  H01L27/11582

Abstract: Methods and apparatuses for depositing an encapsulation layer over a staircase structure during fabrication of a 3D NAND structure to prevent degradation of an oxide-oxide interface and to prevent punchthrough of a wordline are provided. The encapsulation layer is a carbon-containing conformal film deposited over a staircase structure of alternating oxide and nitride layers prior to depositing oxide over the staircase structure.