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公开(公告)号：US09318220B2
公开(公告)日：2016-04-19
申请号：US14182032
申请日：2014-02-17
发明人： Zhenlei Shen , William H. Radke , Peter Feeley
CPC分类号： G06F11/1068 , G06F11/1004 , G06F11/1048 , G11C16/0483 , G11C16/06 , G11C16/10 , G11C16/26 , G11C16/3418 , G11C29/04 , G11C29/52
摘要： Methods for memory cell coupling compensation and apparatuses configured to perform the same are described. One or more methods for memory cell coupling compensation includes determining a state of a memory cell using a voltage that is changed in accordance with a first memory cell coupling compensation voltage, performing an error check on the state of the memory cell, and determining the state of the memory cell using a voltage that is changed in accordance with a second memory cell coupling compensation voltage in response to the error check failing.
摘要翻译： 描述了用于存储器单元耦合补偿的方法和被配置为执行其的装置。 用于存储单元耦合补偿的一种或多种方法包括使用根据第一存储单元耦合补偿电压而改变的电压来确定存储单元的状态，对存储单元的状态执行错误检查，以及确定状态 使用响应于错误检查失败的根据第二存储器单元耦合补偿电压而改变的电压的存储器单元。
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公开(公告)号：US09177659B2
公开(公告)日：2015-11-03
申请号：US13903250
申请日：2013-05-28
发明人： William H. Radke , Zhenlei Shen , Peter Feeley
IPC分类号： G11C11/34 , G11C16/26 , G11C11/26 , G11C11/56 , G11C7/14 , G11C16/34 , G11C29/02 , G11C29/42 , G11C29/50
CPC分类号： G11C16/26 , G11C7/14 , G11C11/26 , G11C11/5628 , G11C11/5642 , G11C16/349 , G11C29/021 , G11C29/028 , G11C29/42 , G11C29/50004
摘要： The present disclosure includes methods, devices, and systems for determining and using soft data in memory devices and systems. One or more embodiments include an array of memory cells and control circuitry coupled to the array. The control circuitry is configured to perform a number of sense operations on the memory cells using a number of sensing voltages to determine soft data associated with a target state of the memory cells, and adjust a sensing voltage used to determine the target state based, at least partially, on the determined soft data.
摘要翻译： 本公开包括用于在存储器设备和系统中确定和使用软数据的方法，设备和系统。 一个或多个实施例包括耦合到阵列的存储器单元阵列和控制电路。 控制电路被配置为使用多个感测电压对存储器单元执行多个感测操作，以确定与存储器单元的目标状态相关联的软数据，并且基于以下方式调整用于确定目标状态的感测电压： 最少部分地在确定的软数据上。
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公开(公告)号：US20150162089A1
公开(公告)日：2015-06-11
申请号：US14626208
申请日：2015-02-19
CPC分类号： G11C16/107 , G06F12/0246 , G06F12/06 , G06F2206/1014 , G06F2212/7201 , G11C7/1006 , G11C11/5628 , G11C11/5642 , G11C13/0002 , G11C14/0018 , G11C14/0045 , G11C16/00 , G11C16/0483 , G11C16/10 , G11C2211/5641 , H03M7/14
摘要： The present disclosure includes methods and apparatuses for mapping between program states and data patterns. One method includes: programming a group of G memory cells such that a combination of respective program states of the group maps to a constellation point corresponding to a received N unit data pattern, the group used to store N/G units of data per memory cell; wherein the constellation point is one of a number of constellation points of a constellation associated with mapping respective program state combinations of the group of memory cells to N unit data patterns; and wherein the constellation comprises a first mapping shell and a second mapping shell, the constellation points corresponding to the respective first and second mapping shells determined, at least partially, based on a polynomial expression of order equal to G.
摘要翻译： 本公开包括用于在程序状态和数据模式之间进行映射的方法和装置。 一种方法包括：对一组G存储器单元进行编程，使得该组的各个程序状态的组合映射到与接收到的N单位数据模式对应的星座点，该组用于存储每个存储单元的N / G个数据单元 ; 其中所述星座点是与将所述存储器单元组的各个程序状态组合映射到N个单位数据模式相关联的星座的多个星座点中的一个; 并且其中所述星座包括第一映射外壳和第二映射外壳，所述星座点对应于相应的第一和第二映射外壳，至少部分地基于等于G的等级的多项式表达式确定。
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公开(公告)号：US20140351491A1
公开(公告)日：2014-11-27
申请号：US14304420
申请日：2014-06-13
CPC分类号： G11C16/107 , G06F12/0246 , G06F12/06 , G06F2206/1014 , G06F2212/7201 , G11C7/1006 , G11C11/5628 , G11C11/5642 , G11C13/0002 , G11C14/0018 , G11C14/0045 , G11C16/00 , G11C16/0483 , G11C16/10 , G11C2211/5641 , H03M7/14
摘要： The present disclosure includes methods and apparatuses for mapping between program states and data patterns. One method includes: programming a group of G memory cells such that a combination of respective program states of the group maps to a constellation point corresponding to a received N unit data pattern, the group used to store N/G units of data per memory cell; wherein the constellation point is one of a number of constellation points of a constellation associated with mapping respective program state combinations of the group of memory cells to N unit data patterns; and wherein the constellation comprises a first mapping shell and a second mapping shell, the constellation points corresponding to the respective first and second mapping shells determined, at least partially, based on a polynomial expression of order equal to G.
摘要翻译： 本公开包括用于在程序状态和数据模式之间进行映射的方法和装置。 一种方法包括：对一组G存储器单元进行编程，使得该组的各个程序状态的组合映射到与接收到的N单位数据模式对应的星座点，该组用于存储每个存储单元的N / G个数据单元 ; 其中所述星座点是与将所述存储器单元组的各个程序状态组合映射到N个单位数据模式相关联的星座的多个星座点中的一个; 并且其中所述星座包括第一映射外壳和第二映射外壳，所述星座点对应于相应的第一和第二映射外壳，至少部分地基于等于G的等级的多项式表达式确定。
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45.发明申请公开(公告)号：US20130141985A1
公开(公告)日：2013-06-06
申请号：US13746689
申请日：2013-01-22
发明人： William H. Radke , Zhenlei Shen , Peter Feeley
IPC分类号： G11C16/26
CPC分类号： G11C16/28 , G11C11/5642 , G11C16/0483 , G11C16/26
摘要： The present disclosure includes methods, devices, and systems for adjusting sensing voltages in devices. One or more embodiments include memory cells, and a controller configured to perform a sense operation on the memory cells using a sensing voltage to determine a quantity of the memory cells having a threshold voltage (Vt) greater than the sensing voltage and adjust a sensing voltage used to determine a state of the memory cells based, at least partially, on the determined quantity of memory cells.
摘要翻译： 本公开包括用于调整设备中的感测电压的方法，设备和系统。 一个或多个实施例包括存储器单元和被配置为使用感测电压对存储器单元执行感测操作的控制器，以确定具有大于感测电压的阈值电压（Vt）的存储器单元的数量并且调整感测电压 用于至少部分地基于所确定的存储器单元的数量来确定存储器单元的状态。
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公开(公告)号：US12050808B2
公开(公告)日：2024-07-30
申请号：US17589451
申请日：2022-01-31
发明人： Zhenlei Shen , Fangfang Zhu , Tingjun Xie , Jiangli Zhu
IPC分类号： G06F3/06
CPC分类号： G06F3/0659 , G06F3/0604 , G06F3/0634 , G06F3/0673
摘要： A request to write data at a memory device is received. Responsive to receiving the request to write the data at the memory device, a first random value and a second random value is determined. Responsive to determining that the first random value does not satisfy a first threshold criterion and the second random value does not satisfy a second threshold criterion, a first write operation mode is selected from a plurality of write operations modes, and a write operation to write the data at the memory device is performed in accordance with the first write operation mode.
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公开(公告)号：US20240145010A1
公开(公告)日：2024-05-02
申请号：US18404827
申请日：2024-01-04
发明人： Zhongguang Xu , Nicola Ciocchini , Zhenlei Shen , Charles See Yeung Kwong , Murong Lang , Ugo Russo , Niccolo' Righetti
CPC分类号： G11C16/102 , G11C16/08 , G11C16/26 , G11C16/3481
摘要： A processing device in a memory sub-system initiates a partial block handling protocol for a closed block of a memory device, the block comprising a plurality of wordlines. The processing device further sends a first programming command to the memory device to program one or more wordlines of the block with first padding data having a first data pattern, wherein the one or more wordlines are adjacent to a last wordline of the block programmed before the block was closed. In addition, the processing device sends a second programming command to the memory device to program all of a set of remaining wordlines of the block with second padding data having a second data pattern comprising fewer bits of data per cell than the first data pattern.
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公开(公告)号：US20230402108A1
公开(公告)日：2023-12-14
申请号：US18238850
申请日：2023-08-28
CPC分类号： G11C16/3418 , G11C16/24 , G11C16/08 , G11C16/102 , G11C16/26
摘要： It is determined whether a write disturb capability associated with a first location of a memory device satisfies a threshold criterion. Responsive to determining that the write disturb capability associated with the first location of the memory device satisfies the threshold criterion, a plurality of memory units is remapped to a second location of the memory device, wherein a write disturb capability associated with the second location of the memory device does not satisfy the threshold criterion.
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公开(公告)号：US11776611B2
公开(公告)日：2023-10-03
申请号：US17393013
申请日：2021-08-03
发明人： Mikai Chen , Zhenming Zhou , Murong Lang , Zhenlei Shen
IPC分类号： G11C11/406 , G11C11/4078 , G11C11/4096
CPC分类号： G11C11/40622 , G11C11/4078 , G11C11/4096 , G11C11/40615
摘要： A processing device of a memory sub-system is configured to determine, for a memory unit of the memory device, a plurality of write disturb counts associated with the memory unit, wherein each of the plurality of write disturb (WD) count is associated with a corresponding write disturb direction; compute, for the memory unit, a weighted WD count reflecting the plurality of write disturb counts; determine whether the weighted WD count meets a criterion; and responsive to determining that the weighted WD count meets the criterion, perform a refresh operation on the memory unit.
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公开(公告)号：US11694017B2
公开(公告)日：2023-07-04
申请号：US16930158
申请日：2020-07-15
IPC分类号： G06F30/00 , G06F30/398 , G06F30/392 , G06F11/30 , G06F119/08
CPC分类号： G06F30/398 , G06F11/3058 , G06F30/392 , G06F2119/08
摘要： A quality rating for a memory device to be installed at a memory sub-system is determined, where the quality rating corresponds to a performance of the memory device at one or more operating temperatures. A determination is made whether the quality rating for the memory device satisfies a first quality rating condition associated with a first temperature zone of two or more temperature zones of the memory sub-system. Responsive to the determination that the quality rating for the memory device satisfies the first quality rating condition, the memory device is assigned to be installed at a first memory device socket of the first temperature zone.
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