公开(公告)号：US08053806B2

公开(公告)日：2011-11-08

申请号：US12940879

申请日：2010-11-05

申请人： Takashi Kyono ,  Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Takao Nakamura

发明人： Takashi Kyono ,  Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Takao Nakamura

IPC分类号： H01L29/24 ,  H01L33/00 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L29/22

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device 11a includes a group III nitride semiconductor supporting base 13, a GaN based semiconductor region 15, an active layer active layer 17, and a GaN semiconductor region 19. The primary surface 13a of the group III nitride semiconductor supporting base 13 is not any polar plane, and forms a finite angle with a reference plane Sc that is orthogonal to a reference axis Cx extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region 15 is grown on the semipolar primary surface 13a. A GaN based semiconductor layer 21 of the GaN based semiconductor region 15 is, for example, an n-type GaN based semiconductor, and the n-type GaN based semiconductor is doped with silicon. A GaN based semiconductor layer 23 of an oxygen concentration of 5×1016 cm−3 or more provides an active layer 17 with an excellent crystal quality, and the active layer 17 is grown on the primary surface of the GaN based semiconductor layer 23.

摘要翻译： 提供具有优异表面形态的具有氮化镓基半导体膜的III族氮化物半导体器件。 III族氮化物光半导体器件11a包括III族氮化物半导体支撑基底13，GaN基半导体区域15，有源层有源层17和GaN半导体区域19.第III族氮化物半导体支撑基底13的主表面13a 基座13不是任何极性平面，并且与参考平面Sc形成有限的角度，该参考平面Sc与在III族氮化物半导体的c轴方向上延伸的基准轴Cx正交。 在半极性主表面13a上生长GaN基半导体区域15。 GaN系半导体区域15的GaN系半导体层21例如为n型GaN系半导体，n型GaN系半导体掺杂有硅。 氧浓度为5×1016cm-3以上的GaN系半导体层23提供具有优异晶体质量的有源层17，并且在GaN基半导体层23的主表面上生长有源层17。

公开(公告)号：US09231370B2

公开(公告)日：2016-01-05

申请号：US13453743

申请日：2012-04-23

申请人： Takamichi Sumitomo ,  Takashi Kyono ,  Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Masahiro Adachi ,  Shimpei Takagi ,  Katsunori Yanashima

发明人： Takamichi Sumitomo ,  Takashi Kyono ,  Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Masahiro Adachi ,  Shimpei Takagi ,  Katsunori Yanashima

IPC分类号： H01S5/042 ,  H01S5/32 ,  H01S5/343 ,  B82Y20/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/22

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333

摘要： A group III nitride semiconductor laser device includes a laser structure, an insulating layer, an electrode and dielectric multilayers. The laser structure includes a semiconductor region on a semi-polar primary surface of a hexagonal group III nitride semiconductor support base. The dielectric multilayers are on first and second end-faces for the laser cavity. The c-axis of the group III nitride tilts by an angle ALPHA from the normal axis of the primary surface in the waveguide axis direction from the first end-face to the second end-faces. A pad electrode has first to third portions provided on the first to third regions of the semiconductor regions, respectively. An ohmic electrode is in contact with the third region through an opening of the insulating layer. The first portion has a first arm, which extends to the first end-face edge. The third portion is away from the first end-face edge.

摘要翻译： III族氮化物半导体激光器件包括激光器结构，绝缘层，电极和电介质多层。 激光器结构包括在六方晶III族氮化物半导体支撑基体的半极性主表面上的半导体区域。 电介质多层在激光腔的第一和第二端面上。 III族氮化物的c轴从第一端面到第二端面在波导轴线方向上从主面的法线倾斜角度ALPHA。 焊盘电极具有分别设置在半导体区域的第一至第三区域上的第一至第三部分。 欧姆电极通过绝缘层的开口与第三区域接触。 第一部分具有延伸到第一端面边缘的第一臂。 第三部分远离第一端面边缘。

公开(公告)号：US08048702B2

公开(公告)日：2011-11-01

申请号：US12692154

申请日：2010-01-22

申请人： Yohei Enya ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Takashi Kyono ,  Katsushi Akita

发明人： Yohei Enya ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Takashi Kyono ,  Katsushi Akita

IPC分类号： H01L21/00

CPC分类号： H01L21/0262 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/0075

摘要： In the method of fabricating a nitride-based semiconductor optical device by metal-organic chemical vapor deposition, a barrier layer is grown at a first temperature while supplying a gallium source to a reactor. The barrier layer comprises a first gallium nitride-based semiconductor. After the growth of the barrier layer, a nitrogen material and an indium material are supplied to the reactor without supply of the gallium source to perform a preflow of indium. Immediately after the preflow, a well layer is grown on the barrier layer at a second temperature while supplying an indium source and the gallium source to the reactor. The well layer comprises InGaN, and the second temperature is lower than the first temperature. The gallium source and the indium source are supplied to the reactor during plural first periods of the step of growing the well layer to grow plural InGaN layers, respectively. The indium material is supplied to the reactor without supply of the gallium source during the second period of the step of growing the well layer. The second period is between the first periods. The well layer comprises the plural InGaN layers.

摘要翻译： 在通过金属有机化学气相沉积制造氮化物基半导体光学器件的方法中，在将镓源供应到反应器的同时，在第一温度下生长阻挡层。 阻挡层包括第一氮化镓基半导体。 在阻挡层生长之后，向反应器供给氮材料和铟材料，而不提供镓源以执行铟的预流。 在预流之后立即在第二温度下在阻挡层上生长阱层，同时向反应器供应铟源和镓源。 阱层包括InGaN，第二温度低于第一温度。 在生长阱层的步骤的多个第一阶段期间，分别将镓源和铟源供应到反应器，以生长多个InGaN层。 在生长阱层的第二阶段期间，铟材料被供应到反应器而不供应镓源。 第二个时期是在第一个时期之间。 阱层包括多个InGaN层。

公开(公告)号：US08304793B2

公开(公告)日：2012-11-06

申请号：US12836117

申请日：2010-07-14

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takashi Kyono ,  Takao Nakamura

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takashi Kyono ,  Takao Nakamura

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/22 ,  H01S5/3054 ,  H01S5/3202

摘要： A III-nitride semiconductor optical device has a support base comprised of a III-nitride semiconductor, an n-type gallium nitride based semiconductor layer, a p-type gallium nitride based semiconductor layer, and an active layer. The support base has a primary surface at an angle with respect to a reference plane perpendicular to a reference axis extending in a c-axis direction of the III-nitride semiconductor. The n-type gallium nitride based semiconductor layer is provided over the primary surface of the support base. The p-type gallium nitride based semiconductor layer is doped with magnesium and is provided over the primary surface of the support base. The active layer is provided between the n-type gallium nitride based semiconductor layer and the p-type gallium nitride based semiconductor layer over the primary surface of the support base. The angle is in the range of not less than 40° and not more than 140°. The primary surface demonstrates either one of semipolar nature and nonpolar nature. The p-type gallium nitride based semiconductor layer contains carbon as a p-type dopant. A carbon concentration of the p-type gallium nitride based semiconductor layer is not less than 2×1016 cm−3, and the carbon concentration of the p-type gallium nitride based semiconductor layer is not more than 1×1019 cm−3.

摘要翻译： III族氮化物半导体光学器件具有由III族氮化物半导体，n型氮化镓系半导体层，p型氮化镓系半导体层和有源层构成的支撑基体。 支撑基座具有相对于垂直于在III族氮化物半导体的c轴方向上延伸的参考轴线的参考平面成一定角度的主表面。 n型氮化镓基半导体层设置在支撑基体的主表面上。 p型氮化镓基半导体层掺杂有镁并且设置在载体基体的主表面上。 有源层设置在支撑基体的主表面上的n型氮化镓基半导体层和p型氮化镓基半导体层之间。 该角度在不小于40°且不大于140°的范围内。 主要表面表现出半极性和非极性之一。 p型氮化镓系半导体层含有碳作为p型掺杂剂。 p型氮化镓系半导体层的碳浓度为2×1016cm-3以上，p型氮化镓系半导体层的碳浓度为1×1019cm-3以下。

公开(公告)号：US07955881B2

公开(公告)日：2011-06-07

申请号：US12500074

申请日：2009-07-09

申请人： Katsushi Akita ,  Takamichi Sumitomo ,  Yohei Enya ,  Takashi Kyono ,  Masaki Ueno

发明人： Katsushi Akita ,  Takamichi Sumitomo ,  Yohei Enya ,  Takashi Kyono ,  Masaki Ueno

IPC分类号： H01L21/00

CPC分类号： H01L21/0262 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06

摘要： In the method of fabricating a quantum well structure which includes a well layer and a barrier layer, the well layer is grown at a first temperature on a sapphire substrate. The well layer comprises a group III nitride semiconductor which contains indium as a constituent. An intermediate layer is grown on the InGaN well layer while monotonically increasing the sapphire substrate temperature from the first temperature. The group III nitride semiconductor of the intermediate layer has a band gap energy larger than the band gap energy of the InGaN well layer, and a thickness of the intermediate layer is greater than 1 nm and less than 3 nm in thickness. The barrier layer is grown on the intermediate layer at a second temperature higher than the first temperature. The barrier layer comprising a group III nitride semiconductor and the group III nitride semiconductor of the barrier layer has a band gap energy larger than the band gap energy of the well layer.

摘要翻译： 在制造包括阱层和势垒层的量子阱结构的方法中，阱层在蓝宝石衬底的第一温度下生长。 阱层包含含有铟作为成分的III族氮化物半导体。 在InGaN阱层上生长中间层，同时使蓝宝石衬底温度从第一温度单调增加。 中间层的III族氮化物半导体的带隙能量大于InGaN阱层的带隙能量，中间层的厚度大于1nm且小于3nm。 阻挡层在高于第一温度的第二温度下在中间层上生长。 包含III族氮化物半导体的阻挡层和势垒层的III族氮化物半导体的带隙能量大于阱层的带隙能量。

公开(公告)号：US08476615B2

公开(公告)日：2013-07-02

申请号：US13295840

申请日：2011-11-14

申请人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

发明人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L29/06

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/34333

摘要： A GaN-based semiconductor light emitting device 11a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13a tilting from the c-plane toward the m-axis at a tilt angle α of more than or equal to 63 degrees and less than 80 degrees, a GaN-based semiconductor epitaxial region 15, an active layer 17, an electron blocking layer 27, and a contact layer 29. The active layer 17 is composed of a GaN-based semiconductor containing indium. The substrate 13 has a dislocation density of 1×107 cm−2 or less. In the GaN-based semiconductor light emitting device 11a provided with the active layer containing indium, a decrease in quantum efficiency under high current injection can be moderated.

摘要翻译： GaN基半导体发光器件11a包括由GaN基半导体构成的衬底13，该GaN基半导体具有从c面朝向m轴倾斜角度α大于或等于63度的主表面13a;以及 低于80度的GaN基半导体外延区域15，有源层17，电子阻挡层27和接触层29.有源层17由包含铟的GaN基半导体构成。 基板13的位错密度为1×10 7 cm -2以下。 在具有含有铟的有源层的GaN系半导体发光元件11a中，能够缓和高电流注入时的量子效率的降低。

公开(公告)号：US08174035B2

公开(公告)日：2012-05-08

申请号：US12836090

申请日：2010-07-14

申请人： Takamichi Sumitomo ,  Masaki Ueno ,  Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi

发明人： Takamichi Sumitomo ,  Masaki Ueno ,  Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi

IPC分类号： H01L33/00

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0421 ,  H01S5/3202 ,  H01S5/343 ,  H01S5/34333

摘要： An object is to provide a nitride-based semiconductor light emitting device capable of preventing a Schottky barrier from being formed at an interface between a contact layer and an electrode. LD 1 is provided as a nitride-based semiconductor light emitting device provided with a GaN substrate 3, a hexagonal GaN-based semiconductor region 5 provided on a primary surface S1 of the GaN substrate 3 and including a light emitting layer 11, and a p-electrode 21 provided on the GaN-based semiconductor region 5 and comprised of metal. The GaN-based semiconductor region 5 includes a contact layer 17 involving strain, the contact layer 17 is in contact with the p-electrode, the primary surface S1 extends along a reference plane S5 inclined at a predetermined inclination angle θ from a plane perpendicular to the c-axis direction of the GaN substrate 3, and the inclination angle θ is either in the range of more than 40° and less than 90° or in the range of not less than 150° and less than 180°. The GaN-based semiconductor region 5 is lattice-matched with the GaN substrate 3.

摘要翻译： 目的是提供一种能够防止在接触层和电极之间的界面处形成肖特基势垒的氮化物系半导体发光元件。 提供LD1作为氮化物系半导体发光器件，其具备设置在GaN衬底3的主表面S1上且包括发光层11的GaN衬底3，六方晶系GaN基半导体区域5和p - 电极21，其设置在GaN基半导体区域5上并且由金属构成。 GaN基半导体区域5包括涉及应变的接触层17，接触层17与p电极接触，主表面S1沿着以预定倾斜角度倾斜的参考平面S5延伸; 从垂直于GaN衬底3的c轴方向的平面以及倾斜角度; 在大于40°且小于90°的范围内或在不小于150°且小于180°的范围内。 GaN基半导体区域5与GaN衬底3晶格匹配。

公开(公告)号：US20120061643A1

公开(公告)日：2012-03-15

申请号：US13295840

申请日：2011-11-14

申请人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

发明人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L33/04 ,  H01L33/32

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/34333

摘要： A GaN-based semiconductor light emitting device 11a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13a tilting from the c-plane toward the m-axis at a tilt angle α of more than or equal to 63 degrees and less than 80 degrees, a GaN-based semiconductor epitaxial region 15, an active layer 17, an electron blocking layer 27, and a contact layer 29. The active layer 17 is composed of a GaN-based semiconductor containing indium. The substrate 13 has a dislocation density of 1×107 cm−2 or less. In the GaN-based semiconductor light emitting device 11a provided with the active layer containing indium, a decrease in quantum efficiency under high current injection can be moderated.

摘要翻译： GaN基半导体发光器件11a包括由具有从c面朝向m轴倾斜角度大于或等于63度的主表面13a的GaN基半导体构成的衬底13， 低于80度的GaN基半导体外延区域15，有源层17，电子阻挡层27和接触层29.有源层17由包含铟的GaN基半导体构成。 基板13的位错密度为1×10 7 cm -2以下。 在具有含有铟的有源层的GaN系半导体发光元件11a中，能够缓和高电流注入时的量子效率的降低。

公开(公告)号：US08718110B2

公开(公告)日：2014-05-06

申请号：US13366636

申请日：2012-02-06

申请人： Takashi Kyono ,  Yohei Enya ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

发明人： Takashi Kyono ,  Yohei Enya ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

IPC分类号： H01S5/00

CPC分类号： H01S5/3201 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer.

摘要翻译： 氮化物半导体激光器包括具有氮化镓基半导体的主表面的导电支撑衬底，设置在主表面上方的有源层和设置在主表面上的p型覆层区域。 主表面相对于垂直于在氮化镓基半导体的c轴方向上延伸的参考轴的参考平面倾斜。 p型包层区域包括第一和第二p型III族氮化物半导体层。 第一p型半导体层包括包括内置各向异性应变的InAlGaN层。 第二p型半导体层包括与InAlGaN层的材料不同的半导体。 第一氮化物半导体层设置在第二p型半导体层和有源层之间。 第二p型半导体层的电阻率低于第一p型半导体层的电阻率。

公开(公告)号：US08953656B2

公开(公告)日：2015-02-10

申请号：US13354053

申请日：2012-01-19

申请人： Takashi Kyono ,  Shimpei Takagi ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Yohei Enya ,  Masaki Ueno ,  Katsunori Yanashima

发明人： Takashi Kyono ,  Shimpei Takagi ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Yohei Enya ,  Masaki Ueno ,  Katsunori Yanashima

IPC分类号： H01S5/00 ,  H01S5/343 ,  H01S5/32 ,  H01S5/02 ,  H01S5/10 ,  H01S5/20

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/2009 ,  H01S5/3202

摘要： A Group III nitride semiconductor laser device includes a laser structure including a support substrate with a semipolar primary surface of a hexagonal Group III nitride semiconductor, and a semiconductor region thereon, and an electrode, provided on the semiconductor region, extending in a direction of a waveguide axis in the laser device. The c-axis of the nitride semiconductor is inclined at an angle ALPHA relative to a normal axis to the semipolar surface toward the waveguide axis direction. The laser structure includes first and second fractured faces intersecting with the waveguide axis. A laser cavity of the laser device includes the first and second fractured faces extending from edges of first and second faces. The first fractured face includes a step provided at an end face of an InGaN layer of the semiconductor region and extending in a direction from one side face to the other of the laser device.

摘要翻译： III族氮化物半导体激光器件包括激光器结构，其包括具有六方晶III族氮化物半导体的半极性主表面的支撑衬底和其上的半导体区域，以及设置在半导体区域上的电极，沿着 波导轴在激光装置中。 氮化物半导体的c轴相对于朝向波导轴方向的半极性表面的法线轴线以一角度ALPHA倾斜。 激光器结构包括与波导轴相交的第一和第二断裂面。 激光装置的激光腔包括从第一和第二面的边缘延伸的第一和第二断裂面。 第一断裂面包括设置在半导体区域的InGaN层的端面并沿从激光器件的一个侧面到另一个的方向延伸的台阶。