公开(公告)号：US20170166454A1

公开(公告)日：2017-06-15

申请号：US15446479

申请日：2017-03-01

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi WATANABE ,  Hiroshi FUKUI ,  Kei SATO ,  Tsutomu NANATAKI

IPC: C01F7/30 ,  C30B29/20 ,  C30B29/64 ,  C30B1/02

CPC classification number: C01F7/30 ,  C01F7/441 ,  C01F7/442 ,  C01P2004/03 ,  C01P2004/20 ,  C01P2004/22 ,  C01P2004/50 ,  C01P2004/54 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/80 ,  C04B35/111 ,  C04B35/626 ,  C04B35/62645 ,  C04B2235/5292 ,  C04B2235/5296 ,  C04B2235/72 ,  C30B1/02 ,  C30B29/20 ,  C30B29/64

Abstract: 96 parts by mass of a γ-alumina powder, 4 parts by mass of a an AlF3 powder, and 0.17 parts by mass of an α-alumina powder as a seed crystal were mixed by a pot mill. The purities of each raw material were evaluated, and it was found that the mass ratio of each impurity element other than Al, O, F, H, C, and S was 10 ppm or less. In a high-purity alumina-made sagger having a purity of 99.9 percent by mass, 300 g of the obtained mixed powder was received, and after a high-purity alumina-made lid having a purity of 99.9 percent by mass was placed on the sagger, a heat treatment was perforated at 900° C. for 3 hours in an electric furnace in an air flow atmosphere, so that an alumina powder was obtained. The value of AlF3 mass/container volume was 0.016 g/cm3.

公开(公告)号：US20160145768A1

公开(公告)日：2016-05-26

申请号：US14951548

申请日：2015-11-25

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi WATANABE ,  Jun YOSHIKAWA ,  Hirofumi YAMAGUCHI ,  Tsutomu NANATAKI

IPC: C30B29/16 ,  H01B1/02 ,  C30B1/10 ,  C01G9/02 ,  C30B19/12 ,  C30B1/02

CPC classification number: C30B29/16 ,  C01G9/02 ,  C01P2002/60 ,  C01P2006/40 ,  C30B1/02 ,  C30B1/10 ,  C30B7/005 ,  C30B7/10 ,  C30B7/14 ,  C30B19/12 ,  C30B28/04 ,  C30B29/605 ,  H01B1/02

Abstract: Disclosed is a self-supporting zinc oxide substrate composed of a plate composed of a plurality of zinc-oxide-based single crystal grains, wherein the plate has a single crystal structure in an approximately normal direction, and the zinc-oxide-based single crystal grains have a cross-sectional average diameter of greater than 1 μm. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a layer with a thickness of 20 μm or greater composed of zinc-oxide-based crystals on the oriented polycrystalline sintered body so that the layer has crystal orientation mostly in conformity with crystal orientation of the oriented polycrystalline sintered body; and removing the oriented polycrystalline sintered body to obtain the self-supporting zinc oxide substrate. The present invention can provide a self-supporting zinc oxide substrate being inexpensive and also suitable for having a large area as a preferable alternative material for a zinc oxide single crystal substrate.

Abstract translation: 公开了一种由多个基于氧化锌的单晶颗粒构成的板构成的自支撑氧化锌基板，其中所述板在大致正方向具有单晶结构，并且所述氧化锌基单晶 晶粒的截面平均直径大于1μm。 该基板可以通过包括提供取向多晶烧结体的方法制造; 在定向多晶体烧结体上形成厚度为20μm以上的由氧化锌系晶体构成的层，使得该层的结晶取向主要与取向多晶体烧结体的结晶取向一致; 除去取向多晶体烧结体，得到自支撑氧化锌衬底。 本发明可以提供廉价的自支撑氧化锌衬底，并且也适合于具有大面积作为氧化锌单晶衬底的优选替代材料。

公开(公告)号：US20150144956A1

公开(公告)日：2015-05-28

申请号：US14499688

申请日：2014-09-29

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi WATANABE ,  Jun YOSHIKAWA ,  Tsutomu NANATAKI ,  Katsuhiro IMAI ,  Tomohiko SUGIYAMA ,  Takashi YOSHINO ,  Yukihisa TAKEUCHI ,  Kei SATO

IPC: H01L33/32 ,  H01L33/00 ,  C30B29/40 ,  C30B19/02 ,  C30B19/12 ,  H01L33/16 ,  C30B9/12

CPC classification number: H01L33/18 ,  C30B9/00 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/20 ,  C30B28/04 ,  C30B29/406 ,  C30B29/605 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32

Abstract: Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 μm or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.

Abstract translation: 提供了可用作氮化镓单晶衬底的替代材料的自支撑氮化镓衬底，其价格便宜并且也适合于具有大的面积。 该基板由氮化镓系单晶粒构成的板构成，其中，在大致正方向上具有单晶结构。 该基板可以通过包括提供取向多晶烧结体的方法制造; 在所述烧结体上形成由氮化镓构成的籽晶层，使得所述晶种层的结晶取向主要与所述烧结体的晶体取向一致; 在晶种层上形成由氮化镓系晶体构成的厚度为20μm以上的层，使得该层的结晶取向主要与晶种层的晶体取向一致; 并除去烧结体。

公开(公告)号：US20130229746A1

公开(公告)日：2013-09-05

申请号：US13864467

申请日：2013-04-17

Applicant: NGK INSULATORS, LTD.

Inventor： Kenichiro AIKAWA ,  Morimichi WATANABE ,  Asumi JINDO ,  Yuji KATSUDA ,  Yosuke SATO ,  Yoshinori ISODA

IPC: H01L21/683

CPC classification number: H01L21/67 ,  B32B18/00 ,  C04B35/58 ,  C04B35/581 ,  C04B35/6261 ,  C04B35/62655 ,  C04B35/645 ,  C04B37/001 ,  C04B37/003 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3865 ,  C04B2235/5445 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/08 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/36 ,  C04B2237/366 ,  C04B2237/58 ,  C04B2237/704 ,  C04B2237/708 ,  C04B2237/72 ,  C23C14/3414 ,  H01L21/6831 ,  H05B1/00 ,  H05B3/283 ,  Y10T428/24942

Abstract: An electrostatic chuck 1A includes a susceptor 11A having an adsorption face 11a of adsorbing a semiconductor, and an electrostatic chuck electrode 4 embedded in the susceptor. The susceptor 11A includes a plate shaped main body 3 and a surface corrosion resistant layer 2 including the adsorption face 2. The surface corrosion resistant layer 2 is made of a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The ceramic material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2θ=47 to 50° by CuKα X-ray.

Abstract translation: 静电吸盘1A包括具有吸附半导体的吸附面11a的基座11A和嵌入基座的静电卡盘电极4。 基座11A包括板状主体3和包括吸附面2的表面耐腐蚀层2.表面耐腐蚀层2由以镁，铝，氧和氮为主要成分的陶瓷材料制成。 陶瓷材料包括主相，其包含通过CuKαX射线显示出至少2theta = 47至50°的XRD峰的镁 - 铝氧氮化物相。

公开(公告)号：US20130228566A1

公开(公告)日：2013-09-05

申请号：US13864559

申请日：2013-04-17

Applicant: NGK INSULATORS, LTD.

Inventor： Nobuyuki KONDO ,  Morimichi WATANABE ,  Asumi JINDO ,  Yuji KATSUDA ,  Yosuke SATO ,  Yoshinori ISODA

IPC: H05B3/28 ,  B32B18/00

CPC classification number: H01L21/67 ,  B32B18/00 ,  C04B35/58 ,  C04B35/581 ,  C04B35/6261 ,  C04B35/62655 ,  C04B35/645 ,  C04B37/001 ,  C04B37/003 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3865 ,  C04B2235/5445 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/08 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/36 ,  C04B2237/366 ,  C04B2237/58 ,  C04B2237/704 ,  C04B2237/708 ,  C04B2237/72 ,  C23C14/3414 ,  H01L21/6831 ,  H05B1/00 ,  H05B3/283 ,  Y10T428/24942

Abstract: A heating apparatus 11A includes a susceptor having a heating face 12a of heating a semiconductor. The susceptor includes a plate shaped main body 13 and a surface corrosion resistant layer 14 including the heating face. The surface corrosion resistant layer 14 is made of a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The ceramic material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2θ=47 to 50° by CuKα X-ray.

Abstract translation: 加热装置11A包括具有加热半导体的加热面12a的基座。 基座包括板状主体13和包括加热面的表面耐腐蚀层14。 表面耐腐蚀层14由以镁，铝，氧和氮为主要成分的陶瓷材料制成。 陶瓷材料包括主相，其包含通过CuKαX射线显示出至少2theta = 47至50°的XRD峰的镁 - 铝氧氮化物相。

公开(公告)号：US20130228565A1

公开(公告)日：2013-09-05

申请号：US13863803

申请日：2013-04-16

Applicant: NGK INSULATORS, LTD.

Inventor： Nobuyuki KONDO ,  Morimichi WATANABE ,  Asumi JINDO ,  Yuji KATSUDA ,  Yosuke SATO ,  Yoshinori ISODA

IPC: H01L21/67

CPC classification number: H01L21/67 ,  B32B18/00 ,  C04B35/58 ,  C04B35/581 ,  C04B35/6261 ,  C04B35/62655 ,  C04B35/645 ,  C04B37/001 ,  C04B37/003 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3865 ,  C04B2235/5445 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/08 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/36 ,  C04B2237/366 ,  C04B2237/58 ,  C04B2237/704 ,  C04B2237/708 ,  C04B2237/72 ,  C23C14/3414 ,  H01L21/6831 ,  H05B1/00 ,  H05B3/283 ,  Y10T428/24942

Abstract: A heating apparatus 1A includes a susceptor part 9A having a heating face 9a of heating a semiconductor W, and a ring shaped part 6A provided in the outside of the heating face 9a. The ring shaped part 6A is composed of a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The ceramic material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2θ=47 to 50° taken by using CuKα ray.

Abstract translation: 加热装置1A包括具有加热半导体W的加热面9a的基座部9A和设置在加热面9a的外侧的环状部6A。 环形部6A由以镁，铝，氧，氮为主要成分的陶瓷材料构成。 陶瓷材料包括主相，其包含镁 - 铝氧氮化物相，其表现出通过使用CuKalpha射线至少在2θ= 47至50°的XRD峰。

公开(公告)号：US20130022526A1

公开(公告)日：2013-01-24

申请号：US13624119

申请日：2012-09-21

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi WATANABE ,  Yuji KATSUDA ,  Toru HAYASE

IPC: C01F17/00 ,  B29C67/04

CPC classification number: C04B35/50 ,  C04B35/44 ,  C04B35/505 ,  C04B35/6262 ,  C04B35/62655 ,  C04B35/645 ,  C04B2235/3213 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/5445 ,  C04B2235/658 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9692 ,  H01J2237/334

Abstract: A mixed powder was prepared by weighing Yb2O3 and SrCO3 in such a way that the molar ratio became 1:1. The resulting mixed powder was subjected to uniaxial pressure forming, so as to produce a disc-shaped compact. The compact was heat-treated in an air atmosphere, so that a complex oxide was synthesized. The resulting complex oxide was pulverized. After the pulverization, a slurry was taken out and was dried in a nitrogen gas stream, so as to produce a synthesized powder material. The resulting synthesized powder material was subjected to uniaxial pressure forming, so as to produce a disc-shaped compact. The resulting compact was fired by a hot-press method, so as to obtain a corrosion-resistant member for semiconductor manufacturing apparatus. The resulting corrosion-resistant member was made from a SrYb2O4.

Abstract translation: 通过称量Yb2O3和SrCO3以使摩尔比为1:1的方式制备混合粉末。 将所得混合粉末进行单轴压力成形，以生成圆盘状压块。 在空气气氛中对压块进行热处理，合成复合氧化物。 将所得复合氧化物粉碎。 粉碎后，取出浆液，并在氮气流中干燥，得到合成粉末材料。 将所得合成的粉末材料进行单轴压力成形，以制造圆盘状压块。 通过热压法烧成所得的压坯，得到半导体制造装置的耐腐蚀构件。 得到的耐腐蚀构件由SrYb2O4制成。