摘要:
The present invention provides a DLL circuit performing a phase adjustment in accordance to an output load, and capable of adjusting the phase in a shot time. In the present invention, in a delayed lock loop (DLL) circuit that generates a control clock having a prescribed phase relationship with a reference clock by delaying the reference clock, the operating delay time of an output buffer is measured and the timing of the control clock is adjusted in accordance with this operating delay time. As a result, the timing of the output clock of the first variable delay circuit delay circuit is adjusted in accordance with the magnitude of the external load. This output clock or the output clock of a separate variable delay circuit subject to the same delay control is then utilized as a control clock.
摘要:
A semiconductor memory device, which refreshes memory cells to retain data, has a first refresh mode and a second refresh mode. The first refresh mode is a mode for refreshing all of the memory cells, and the second refresh mode is a mode for refreshing a part of the memory cells. By refreshing only designated areas where data must be retained, power consumption in a refresh operation can be reduced, drastically cutting power consumption in a power-down mode.
摘要:
A semiconductor device for generating first and second internal clocks complementary with each other from an external clock and usable for both a system of a type using a complementary clock and a system of a type generating a 180° phase clock internally, is disclosed. A first clock input circuit (buffer) is supplied with a first external clock and outputs a first internal clock. A second clock input circuit (buffer) is supplied with a second external clock complementary with the first external clock and outputs a second clock. A ½ phase clock generating circuit generates a ½ phase shift signal 180° out of phase with the first internal clock. A second external clock state detection circuit judges whether the second external clock is input to the second clock input buffer. A switch is operated to produce the second clock as the second internal clock when the second external clock is input and to produce the ½ phase shift signal as the second internal clock when the second external clock is not input, in accordance with the judgement at the second external clock state detection circuit.
摘要:
A semiconductor memory device includes memory cells, word lines connected to the memory cells, bit lines connected to the memory cells, and a first circuit which resets the bit lines to a reset potential which is based on data read in a previous read cycle.
摘要:
A system and a semiconductor device for realizing such a system are disclosed. The system uses at least a semiconductor device for retrieving an input signal in synchronism with an internal clock generated from an external clock, the input signal remaining effectively in synchronism with the external clock. Even in the case where a phase difference develops between a clock and a signal at the receiving end, or even in the case where a phase difference develops between a clock input circuit and other signal input circuits in the semiconductor device at the receiving end, data can be transferred at high speed. Each input circuit of the semiconductor device at the receiving end includes an input timing adjusting circuit for adjusting the phase of the clock applied to the input circuit in such a manner that the input circuit retrieves the input signal in an effective and stable state. In the case where the skew between the input signals is small as compared with the skew between the input signals and the clock, an input timing adjusting circuit is shared by a plurality of the input circuits.
摘要:
A system and a semiconductor device for realizing such a system are disclosed. The system uses at least a semiconductor device for retrieving an input signal in synchronism with an internal clock generated from an external clock, the input signal remaining effectively in synchronism with the external clock. Even in the case where a phase difference develops between a clock and a signal at the receiving end, or even in the case where a phase difference develops between a clock input circuit and other signal input circuits in the semiconductor device at the receiving end, data can be transferred at high speed. Each input circuit of the semiconductor device at the receiving end includes an input timing adjusting circuit for adjusting the phase of the clock applied to the input circuit in such a manner that the input circuit retrieves the input signal in an effective and stable state. In the case where the skew between the input signals is small as compared with the skew between the input signals and the clock, an input timing adjusting circuit is shared by a plurality of the input circuits.
摘要:
A semiconductor memory device includes a plurality of N external ports, each of which receives commands, and an internal circuit which performs at least N access operations during a minimum interval of the commands that are input into one of the external ports.
摘要:
A module includes a semiconductor device, a phase adjustment circuit generating a second clock so that a phase adjustment signal output from the semiconductor device and a first clock have a predetermined phase relationship, and an output circuit that is provided in the semiconductor device and generates the phase adjustment signal from the second clock.
摘要:
In a semiconductor apparatus of the present invention, a plurality of circuit components are provided. A first bus interconnects the circuit components. A second bus interconnects the circuit components. A switching unit outputs a select signal that causes each circuit component to select one of the first bus and the second bus when transmitting a signal from one of the circuit components to another. The second bus has a size larger than a size of the first bus.
摘要:
According to the present invention, a memory circuit requiring refresh operations a first circuit which receives a command in synchronization with a clock signal, and which generates a first internal command internally and a second circuit which generates a second internal command, e.g., a refresh command, internally in a prescribed refresh cycle. And an internal circuit, according to said first internal command, executes corresponding control through clock-synchronous operations, and when said refresh command is issued, sequentially executes control corresponding to the refresh command and control corresponding to said first internal command through clock-asynchronous operations. According to the present invention, when a refresh timing signal is generated, the refresh operation can be intrupted among the external command operations.