DLL circuit adjustable with external load
    41.
    发明授权
    DLL circuit adjustable with external load 有权
    DLL电路可通过外部负载进行调节

    公开(公告)号:US06476653B1

    公开(公告)日:2002-11-05

    申请号:US09774172

    申请日:2001-02-01

    申请人: Yasurou Matsuzaki

    发明人: Yasurou Matsuzaki

    IPC分类号: H03L706

    CPC分类号: H03L7/0814

    摘要: The present invention provides a DLL circuit performing a phase adjustment in accordance to an output load, and capable of adjusting the phase in a shot time. In the present invention, in a delayed lock loop (DLL) circuit that generates a control clock having a prescribed phase relationship with a reference clock by delaying the reference clock, the operating delay time of an output buffer is measured and the timing of the control clock is adjusted in accordance with this operating delay time. As a result, the timing of the output clock of the first variable delay circuit delay circuit is adjusted in accordance with the magnitude of the external load. This output clock or the output clock of a separate variable delay circuit subject to the same delay control is then utilized as a control clock.

    摘要翻译: 本发明提供一种根据输出负载执行相位调整并且能够在拍摄时间内调节相位的DLL电路。 在本发明中,在延迟锁定环(DLL)电路中,通过延迟参考时钟产生与参考时钟具有规定相位关系的控制时钟,测量输出缓冲器的操作延迟时间,并且控制定时 时钟根据该操作延迟时间进行调整。 结果,根据外部负载的大小来调整第一可变延迟电路延迟电路的输出时钟的定时。 然后将该输出时钟或受到相同延迟控制的单独可变延迟电路的输出时钟用作控制时钟。

    Semiconductor memory device capable of reducing power consumption in self-refresh operation
    42.
    发明授权
    Semiconductor memory device capable of reducing power consumption in self-refresh operation 有权
    能够降低自刷新操作中的功耗的半导体存储器件

    公开(公告)号:US06349068B2

    公开(公告)日:2002-02-19

    申请号:US09828847

    申请日:2001-04-10

    IPC分类号: G11C700

    CPC分类号: G11C11/40622 G11C11/406

    摘要: A semiconductor memory device, which refreshes memory cells to retain data, has a first refresh mode and a second refresh mode. The first refresh mode is a mode for refreshing all of the memory cells, and the second refresh mode is a mode for refreshing a part of the memory cells. By refreshing only designated areas where data must be retained, power consumption in a refresh operation can be reduced, drastically cutting power consumption in a power-down mode.

    摘要翻译: 刷新存储单元以保留数据的半导体存储器件具有第一刷新模式和第二刷新模式。 第一刷新模式是用于刷新所有存储单元的模式,第二刷新模式是用于刷新存储单元的一部分的模式。 通过仅刷新必须保留数据的指定区域,可以减少刷新操作中的功耗,从而在掉电模式下大幅度地削减功耗。

    Semiconductor device using complementary clock and signal input state detection circuit used for the same

    公开(公告)号:US06333660B2

    公开(公告)日:2001-12-25

    申请号:US09780475

    申请日:2001-02-12

    IPC分类号: H03K3013

    摘要: A semiconductor device for generating first and second internal clocks complementary with each other from an external clock and usable for both a system of a type using a complementary clock and a system of a type generating a 180° phase clock internally, is disclosed. A first clock input circuit (buffer) is supplied with a first external clock and outputs a first internal clock. A second clock input circuit (buffer) is supplied with a second external clock complementary with the first external clock and outputs a second clock. A ½ phase clock generating circuit generates a ½ phase shift signal 180° out of phase with the first internal clock. A second external clock state detection circuit judges whether the second external clock is input to the second clock input buffer. A switch is operated to produce the second clock as the second internal clock when the second external clock is input and to produce the ½ phase shift signal as the second internal clock when the second external clock is not input, in accordance with the judgement at the second external clock state detection circuit.

    Semiconductor phase adjustment system module
    48.
    发明授权
    Semiconductor phase adjustment system module 失效
    半导体相位调整系统模块

    公开(公告)号:US07391255B2

    公开(公告)日:2008-06-24

    申请号:US09874037

    申请日:2001-06-06

    申请人: Yasurou Matsuzaki

    发明人: Yasurou Matsuzaki

    IPC分类号: H01L25/00

    摘要: A module includes a semiconductor device, a phase adjustment circuit generating a second clock so that a phase adjustment signal output from the semiconductor device and a first clock have a predetermined phase relationship, and an output circuit that is provided in the semiconductor device and generates the phase adjustment signal from the second clock.

    摘要翻译: 模块包括半导体器件,产生第二时钟的相位调整电路,使得从半导体器件输出的相位调整信号和第一时钟具有预定的相位关系,以及设置在半导体器件中的输出电路, 来自第二个时钟的相位调整信号。

    Memory circuit with automatic precharge function, and integrated circuit device with automatic internal command function
    50.
    发明授权
    Memory circuit with automatic precharge function, and integrated circuit device with automatic internal command function 有权
    具有自动预充功能的记忆电路,具有自动内部指令功能的集成电路器件

    公开(公告)号:US07304907B2

    公开(公告)日:2007-12-04

    申请号:US11790832

    申请日:2007-04-27

    申请人: Yasurou Matsuzaki

    发明人: Yasurou Matsuzaki

    IPC分类号: G11C7/00

    摘要: According to the present invention, a memory circuit requiring refresh operations a first circuit which receives a command in synchronization with a clock signal, and which generates a first internal command internally and a second circuit which generates a second internal command, e.g., a refresh command, internally in a prescribed refresh cycle. And an internal circuit, according to said first internal command, executes corresponding control through clock-synchronous operations, and when said refresh command is issued, sequentially executes control corresponding to the refresh command and control corresponding to said first internal command through clock-asynchronous operations. According to the present invention, when a refresh timing signal is generated, the refresh operation can be intrupted among the external command operations.

    摘要翻译: 根据本发明,一种需要刷新操作的存储电路,第一电路接收与时钟信号同步的命令,并且内部产生第一内部命令,第二电路产生第二内部命令,例如刷新命令 在规定的刷新周期内部。 并且根据所述第一内部命令,内部电路通过时钟同步操作执行相应的控制,并且当发出所述刷新命令时,通过时钟异步操作顺序执行对应于刷新命令的控制和对应于所述第一内部命令的控制 。 根据本发明,当产生刷新定时信号时,可以在外部命令操作中中断刷新操作。