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85 条记录 (耗时 0.035 秒)

    Integrated circuit device
    8.
    发明授权
    Integrated circuit device 有权
    集成电路器件

    公开(公告)号：US06194932B1

    公开(公告)日：2001-02-27

    申请号：US09383015

    申请日：1999-08-25

    申请人： Yoshihiro Takemae ,  Yasurou Matsuzaki ,  Hiroyoshi Tomita ,  Nobutaka Taniguchi

    发明人： Yoshihiro Takemae ,  Yasurou Matsuzaki ,  Hiroyoshi Tomita ,  Nobutaka Taniguchi

    IPC分类号： H03L700

    CPC分类号： G11C7/222 ,  G06F1/10 ,  G11C7/22 ,  H03L7/0814

    摘要： The present invention omits a variable delay circuit (10 in FIG. 1) inside a DLL circuit, and instead, creates a timing synchronization circuit, which generates a second reference clock. The timing synchronization circuit shifts the phase of a first reference clock generated by a frequency divider to the timing of a timing signal generated from the other variable delay circuit so that the second reference clock matches to the timing signal. Then, a phase comparator compares the divided first reference clock to a variable clock that delays the second reference clock, and controls the delay time of the variable delay circuit so that both clocks are in phase. As a result, one variable delay circuit can be omitted, and a DLL circuit that uses a divided clock can be configured.

    摘要翻译： 本发明省略了DLL电路内部的可变延迟电路（图1中的10），而是产生产生第二参考时钟的定时同步电路。 定时同步电路将由分频器产生的第一参考时钟的相位移位到从另一个可变延迟电路产生的定时信号的定时，使得第二参考时钟与定​​时信号相匹配。 然后，相位比较器将分频的第一参考时钟与延迟第二参考时钟的可变时钟进行比较，并且控制可变延迟电路的延迟时间，使得两个时钟同相。 结果，可以省略一个可变延迟电路，并且可以配置使用分频时钟的DLL电路。

    Semiconductor integrated circuit memory
    9.
    发明授权
    Semiconductor integrated circuit memory 有权
    半导体集成电路存储器

    公开(公告)号：US06185149B2

    公开(公告)日：2001-02-06

    申请号：US09340147

    申请日：1999-06-28

    申请人： Shinya Fujioka ,  Masao Taguchi ,  Yasuharu Sato ,  Takaaki Suzuki ,  Tadao Aikawa ,  Yasurou Matsuzaki ,  Toshiya Uchida

    发明人： Shinya Fujioka ,  Masao Taguchi ,  Yasuharu Sato ,  Takaaki Suzuki ,  Tadao Aikawa ,  Yasurou Matsuzaki ,  Toshiya Uchida

    IPC分类号： G11C800

    CPC分类号： G11C7/1018 ,  G11C7/1072

    摘要： A semiconductor memory includes memory cell blocks, a burst-length information generating circuit which generates burst-length information based on a burst length, and a block enable circuit which receives the burst-length information. The block enable circuit selectively enables one of the memory cell blocks when the burst length is equal to or shorter than a predetermined burst length and selectively enables a plurality of memory cell blocks based on the burst length when the burst length is longer than the predetermined burst length. Data are read from the above-mentioned one or plurality of memory cell blocks.

    摘要翻译： 半导体存储器包括存储单元块，基于突发长度生成突发长度信息的突发长度信息产生电路，以及接收脉冲串长度信息的块使能电路。 当突发长度等于或小于预定突发长度时，块使能电路选择性地启用存储单元块中的一个，并且当突发长度长于预定突发时，基于脉冲串长度选择性地启用多个存储单元块 长度。 从上述一个或多个存储单元块读取数据。

    Semiconductor device using complementary clock and signal input state detection circuit used for the same
    10.
    发明授权
    Semiconductor device using complementary clock and signal input state detection circuit used for the same 有权

    公开(公告)号：US06333660B2

    公开(公告)日：2001-12-25

    申请号：US09780475

    申请日：2001-02-12

    申请人： Masao Taguchi ,  Hiroyoshi Tomita ,  Yasurou Matsuzaki

    发明人： Masao Taguchi ,  Hiroyoshi Tomita ,  Yasurou Matsuzaki

    IPC分类号： H03K3013

    CPC分类号： H03L7/0805 ,  G11C7/22 ,  G11C7/222 ,  G11C7/225 ,  H03K5/135 ,  H03K5/151 ,  H03K2005/00234 ,  H03L7/0814

    摘要： A semiconductor device for generating first and second internal clocks complementary with each other from an external clock and usable for both a system of a type using a complementary clock and a system of a type generating a 180° phase clock internally, is disclosed. A first clock input circuit (buffer) is supplied with a first external clock and outputs a first internal clock. A second clock input circuit (buffer) is supplied with a second external clock complementary with the first external clock and outputs a second clock. A ½ phase clock generating circuit generates a ½ phase shift signal 180° out of phase with the first internal clock. A second external clock state detection circuit judges whether the second external clock is input to the second clock input buffer. A switch is operated to produce the second clock as the second internal clock when the second external clock is input and to produce the ½ phase shift signal as the second internal clock when the second external clock is not input, in accordance with the judgement at the second external clock state detection circuit.