公开(公告)号：US20080207608A1

公开(公告)日：2008-08-28

申请号：US11578354

申请日：2005-04-11

申请人： Prabhat Kumar ,  Uttam Mane ,  Ramesh Gupta ,  Sunil Nadkarni ,  Anookh Mohanan ,  Ruchi Tandon ,  Siralee Munshi

发明人： Prabhat Kumar ,  Uttam Mane ,  Ramesh Gupta ,  Sunil Nadkarni ,  Anookh Mohanan ,  Ruchi Tandon ,  Siralee Munshi

IPC分类号： A61K31/5377 ,  A61K31/44 ,  A61K31/445 ,  A61K31/47 ,  A61P29/00 ,  A61P9/00 ,  C07D215/00 ,  C07D239/72 ,  C07D241/36 ,  C07D295/00 ,  C07D241/00 ,  C07D239/02 ,  C07D213/00 ,  A61P43/00 ,  A61P25/00 ,  A61K31/495 ,  A61K31/517

CPC分类号： C07D215/42 ,  C07D213/72 ,  C07D215/14 ,  C07D241/12 ,  C07D241/18 ,  C07D241/44 ,  C07D401/04 ,  C07D401/10 ,  C07D401/14 ,  C07D403/10 ,  C07D403/12 ,  C07D405/12 ,  C07D409/12 ,  C07D409/14 ,  C07D413/12 ,  C07D417/12

摘要： The present invention relates to novel compounds of 2-propene-1-one series, of general formula (I), their derivatives, analogs, tautomeric forms, stereoisomers, polymorphs, pharmaceutically acceptable salts, pharmaceutically acceptable solvates and pharmaceutically acceptable compositions containing them, wherein R5, R6, Q and Y are as defined in the specification. The present invention also relates to a process for preparing such compounds, compositions containing such compounds, and use of such compound and composition in medicine. The compounds of the general formula (I) induce HSP-70 and are useful for the treatment of diseases accompanying pathological stress in a living mammalian organism, including a human being, such as stroke, myocardial infarction, inflammatory disorder, hepatotoxicity, sepsis, diseases of viral origin, allograft rejection, tumourous diseases, gastric mucosal damage, brain haemorrhage, endothelial dysfunctions, diabetic complications, neuro-degenerative diseases, post-traumatic neuronal damage, acute renal failure, glaucoma and aging related skin degeneration.

摘要翻译： 本发明涉及通式（I）的2-丙烯-1-酮系列的新化合物，其衍生物，类似物，互变异构形式，立体异构体，多晶型物，药学上可接受的盐，药学上可接受的溶剂合物和含有它们的药学上可接受的组合物， 其中R 5，R 6，Q和Y如说明书中所定义。 本发明还涉及制备这种化合物的方法，含有这些化合物的组合物，以及这些化合物和组合物在医药中的用途。 通式（I）的化合物诱导HSP-70，并且可用于治疗活的哺乳动物生物体中伴随病理应激的疾病，包括人类，如中风，心肌梗死，炎性疾病，肝毒性，败血症，疾病 病毒来源，同种异体移植排斥，肿瘤性疾病，胃粘膜损伤，脑出血，内皮功能障碍，糖尿病并发症，神经退行性疾病，创伤后神经元损伤，急性肾功能衰竭，青光眼和衰老相关的皮肤退化。

公开(公告)号：US20060091552A1

公开(公告)日：2006-05-04

申请号：US10978940

申请日：2004-11-01

申请人： Henry Breit ,  Rong-Chein Wu ,  Prabhat Kumar

发明人： Henry Breit ,  Rong-Chein Wu ,  Prabhat Kumar

IPC分类号： H01L23/48

CPC分类号： H01L23/3736 ,  H01L23/3733 ,  H01L23/3735 ,  H01L2924/0002 ,  Y10T428/12361 ,  Y10T428/12486 ,  Y10T428/12528 ,  Y10T428/12535 ,  Y10T428/12806 ,  Y10T428/12861 ,  Y10T428/12903 ,  Y10T428/31678 ,  H01L2924/00

摘要： A substrate for semiconductor and integrated circuit components including: a core plate containing a Group VIB metal from the periodic table of the elements and/or an anisotropic material, having a first major surface and a second major surface and a plurality of openings extending, at least partially, from the first major surface to the second major surface; and a Group IB metal from the periodic table of the elements or other high thermally conductive material filling at least a portion of the space encompassed by at least some of the openings; and optionally, a layer containing a Group IB metal from the periodic table or other high thermally conductive material disposed over at least a portion of the first major surface and at least a portion of the second major surface. The substrate can be used in electronic devices, which can also include one or more semiconductor components.

摘要翻译： 一种用于半导体和集成电路部件的衬底，包括：含有来自元件的周期表的VIB族金属和/或各向异性材料的芯板，具有第一主表面和第二主表面，以及多个开口， 最少部分地从第一主表面到第二主表面; 和来自元件周期表的IB族金属或其它高导​​热材料填充由至少一些开口包围的空间的至少一部分; 以及任选地，包含来自周期表的IB族金属或设置在第一主表面的至少一部分和第二主表面的至少一部分上的其它高导热材料的层。 该基板可用于电子设备中，其也可包括一个或多个半导体部件。

公开(公告)号：US09601375B2

公开(公告)日：2017-03-21

申请号：US14697391

申请日：2015-04-27

申请人： Wei-Sheng Lei ,  Brad Eaton ,  Jungrae Park ,  Ajay Kumar ,  James S. Papanu ,  Prabhat Kumar

发明人： Wei-Sheng Lei ,  Brad Eaton ,  Jungrae Park ,  Ajay Kumar ,  James S. Papanu ,  Prabhat Kumar

IPC分类号： H01L21/301 ,  H01L21/46 ,  H01L21/78 ,  H01L21/447 ,  H01L21/48 ,  H01L21/50 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/268 ,  H01L21/67 ,  H01L21/683

CPC分类号： H01L21/78 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381

摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits on a front side of the semiconductor wafer includes adhering a back side the semiconductor wafer on the dicing tape of a substrate carrier. Subsequent to adhering the semiconductor wafer on a dicing tape, the dicing tape is treated with a UV-cure process. Subsequent to treating the dicing tape with the UV-cure process, a dicing mask is formed on the front side of the semiconductor wafer, the dicing mask covering and protecting the integrated circuits. The dicing mask is patterned with a laser scribing process to provide gaps in the dicing mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is plasma etched through the gaps in the dicing mask layer to singulate the integrated circuits.

公开(公告)号：US09349648B2

公开(公告)日：2016-05-24

申请号：US14337810

申请日：2014-07-22

申请人： Wei-Sheng Lei ,  Prabhat Kumar ,  Jungrae Park ,  Brad Eaton ,  Ajay Kumar

发明人： Wei-Sheng Lei ,  Prabhat Kumar ,  Jungrae Park ,  Brad Eaton ,  Ajay Kumar

IPC分类号： H01L21/00 ,  H01L21/822 ,  H01L21/02 ,  H01L21/033 ,  H01L21/67

CPC分类号： H01L21/822 ,  B23K26/0732 ,  B23K26/364 ,  B23K2103/56 ,  H01L21/02057 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/31105 ,  H01L21/32131 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/78

摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a top hat laser beam profile laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 在一个例子中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护集成电路的层组成。 然后用顶帽激光束轮廓激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。 然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

公开(公告)号：US09187802B2

公开(公告)日：2015-11-17

申请号：US12915781

申请日：2010-10-29

申请人： Paul R. Aimone ,  Prabhat Kumar

发明人： Paul R. Aimone ,  Prabhat Kumar

IPC分类号： C22B9/22 ,  C22B9/16 ,  C22B9/00 ,  C22B34/24 ,  C22B34/20 ,  C22C27/02

CPC分类号： C22B34/24 ,  C22B9/20 ,  C22B9/226 ,  C22B9/228 ,  C22C27/02

摘要： A niobium or niobium alloy which contains pure or substantially pure niobium and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Ir, Pt, Mo, W and Re to form a niobium alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the niobium alloy.

摘要翻译： 一种铌或铌合金，其含有纯的或基本上纯的铌和至少一种选自Ru，Rh，Pd，Os，Ir，Pt，Mo，W和Re的金属元素，以形成铌合金， 含水腐蚀。 本发明还涉及制备铌合金的方法。

公开(公告)号：US20150221505A1

公开(公告)日：2015-08-06

申请号：US14658102

申请日：2015-03-13

申请人： Jungrae Park ,  Wei-Sheng Lei ,  Prabhat Kumar ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

发明人： Jungrae Park ,  Wei-Sheng Lei ,  Prabhat Kumar ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

IPC分类号： H01L21/02 ,  H01L21/683 ,  H01L21/308 ,  B05B3/10 ,  B05B1/00

CPC分类号： H01L21/02282 ,  B05B1/00 ,  B05B3/1014 ,  B05B3/1035 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/6715 ,  H01L21/6835 ,  H01L21/78 ,  H01L2221/68327

摘要： Improved wafer coating processes, apparatuses, and systems are described. In one embodiment, an improved spin-coating process and system is used to form a mask for dicing a semiconductor wafer with a laser plasma dicing process. In one embodiment, a spin-coating apparatus for forming a film over a semiconductor wafer includes a rotatable stage configured to support the semiconductor wafer. The rotatable stage has a downward sloping region positioned beyond a perimeter of the semiconductor wafer. The apparatus includes a nozzle positioned above the rotatable stage and configured to dispense a liquid over the semiconductor wafer. The apparatus also includes a motor configured to rotate the rotatable stage.

摘要翻译： 描述了改进的晶片涂布工艺，装置和系统。 在一个实施例中，改进的旋涂工艺和系统用于形成用激光等离子体切割工艺切割半导体晶片的掩模。 在一个实施例中，用于在半导体晶片上形成膜的旋涂装置包括被配置为支撑半导体晶片的可旋转台。 可旋转台具有位于半导体晶片周边之外的向下倾斜区域。 该设备包括位于可旋转台上方并被配置为在半导体晶片上分配液体的喷嘴。 该装置还包括构造成旋转可旋转台的马达。

公开(公告)号：US20130233379A1

公开(公告)日：2013-09-12

申请号：US13784043

申请日：2013-03-04

申请人： David Tanner ,  Prabhat Kumar

发明人： David Tanner ,  Prabhat Kumar

IPC分类号： H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/1868 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/068 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

摘要： Embodiments of the invention generally relate to solar cells having reduced carrier recombination and methods of forming the same. The solar cells have eutectic local contacts and passivation layers which reduce recombination by facilitating formation of a back surface field (BSF). A patterned aluminum back contact is disposed on the passivation layer for removing current form the solar cell. The patterned back contact reduces the cost-per-watt of the solar cell by using less material than a full-surface back contact. The methods of forming the solar cells include depositing a passivation layer including aluminum oxide and silicon nitride on a back surface of a solar cell, and then forming openings through the passivation layer. A patterned aluminum back contact is disposed on the passivation layer over the holes, and thermally processed to form a silicon-aluminum eutectic within the openings.

摘要翻译： 本发明的实施方案通常涉及具有减少的载体重组的太阳能电池及其形成方法。 太阳能电池具有共晶的局部接触和钝化层，通过促进背面场（BSF）的形成来减少复合。 图案化的铝背接触设置在钝化层上以去除太阳能电池的电流。 图案化的背面接触通过使用比全表面背面接触更少的材料来降低太阳能电池的每瓦成本。 形成太阳能电池的方法包括在太阳能电池的背面上沉积包括氧化铝和氮化硅的钝化层，然后通过钝化层形成开口。 图案化的铝背接触器设置在孔上的钝化层上，并且被热处理以在开口内形成硅铝共晶体。

公开(公告)号：US07794554B2

公开(公告)日：2010-09-14

申请号：US11038890

申请日：2005-01-19

申请人： Paul R. Aimone ,  Prabhat Kumar ,  Peter R. Jepson ,  Henning Uhlenhut ,  Howard V. Goldberg ,  Steven A. Miller

发明人： Paul R. Aimone ,  Prabhat Kumar ,  Peter R. Jepson ,  Henning Uhlenhut ,  Howard V. Goldberg ,  Steven A. Miller

IPC分类号： C21D5/00

CPC分类号： H01J37/3491 ,  B22F7/062 ,  B22F2007/068 ,  B22F2999/00 ,  C23C14/3414 ,  Y02P10/295 ,  B22F3/1055

摘要： Refractory metal products, such as tantalum, can be rejuvenated after metal consumption in selected zones by filling the zones with powder and simultaneously applying focused radiant energy to the powder.

摘要翻译： 耐火金属制品，如钽，可以在选定区域的金属消耗后通过用粉末填充区域并同时向粉末施加聚焦的辐射能来恢复活力。

公开(公告)号：US20070071985A1

公开(公告)日：2007-03-29

申请号：US11238366

申请日：2005-09-29

申请人： Prabhat Kumar ,  Gerhard Woetting ,  Rong-Chein Wu

发明人： Prabhat Kumar ,  Gerhard Woetting ,  Rong-Chein Wu

IPC分类号： C04B35/01

CPC分类号： C23C14/28 ,  C04B35/01 ,  C04B35/111 ,  C04B35/453 ,  C04B35/457 ,  C04B35/495 ,  C04B35/6261 ,  C04B35/645 ,  C04B2235/3256 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/77 ,  C23C14/0021 ,  C23C14/086

摘要： The present invention is directed to a composition consisting essentially of: a) from about 0.1 to about 60 mole % of MoO2, b) from 0 to about 99.9 mole % of In2O3, c) from 0 to about 99.9 mole % of SnO2, d) from 0 to about 99.9 mole % of ZnO, e) from 0 to about 99.9 mole % of Al2O3, f) from 0 to about 99.9 mole % of Ga2O3, wherein the sum of components b) through f) is from about 40 to about 99.9 mole %, and wherein the mole %s are based on the total product and wherein the sum of components a) through e) is 100. The invention is also directed to the sintered product of such composition, a sputtering target made from the sintered product and a transparent electroconductive film made from the composition.

摘要翻译： 本发明涉及一种组合物，其基本上由以下组成：a）约0.1至约60摩尔％的MoO 2 2，b）0至约99.9摩尔％的In 2， c）0至约99.9摩尔％的SnO 2，d）0至约99.9摩尔％的ZnO，e）0至约3摩尔％ 99.9摩尔％的Al 2 O 3，f）0至约99.9摩尔％的Ga 2 O 3 3 / 其中组分b）至f）的总和为约40至约99.9摩尔％，并且其中摩尔％s基于总产物，其中组分a）至e）的总和为100.本发明 还涉及这种组合物的烧结产品，由烧结产品制成的溅射靶和由该组合物制成的透明导电膜。

公开(公告)号：US06593532B1

公开(公告)日：2003-07-15

申请号：US09685185

申请日：2000-10-11

申请人： Howard V. Goldberg ,  Prabhat Kumar ,  Thomas Ryan

发明人： Howard V. Goldberg ,  Prabhat Kumar ,  Thomas Ryan

IPC分类号： H01B700

CPC分类号： H01G9/012 ,  H01B1/02 ,  H01G9/048

摘要： Electrolytic capacitor lead wires doped with one or more interstitial elements at the surface to enhance (lower) leakage of capacitors using such lead wires.

摘要翻译： 在表面掺杂有一个或多个间隙元素的电解电容器引线，以增强（较低）使用这种引线的电容器的泄漏。