公开(公告)号：US10910219B2

公开(公告)日：2021-02-02

申请号：US16522930

申请日：2019-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Atsuo Isobe

IPC: H01L21/02 ,  H01L21/283 ,  B23K26/352 ,  B23K26/06 ,  B23K26/073 ,  H01L27/12 ,  H01L21/268 ,  B23K101/40 ,  H01L27/146

Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

公开(公告)号：US10515983B2

公开(公告)日：2019-12-24

申请号：US16515117

申请日：2019-07-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L21/84 ,  B23K26/073 ,  H01L21/20 ,  H01L29/66 ,  H01L21/3213

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

公开(公告)号：US10153301B2

公开(公告)日：2018-12-11

申请号：US15644916

申请日：2017-07-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Wataru Uesugi ,  Hikaru Tamura ,  Atsuo Isobe

IPC: H03K19/00 ,  H01L27/12 ,  H01L49/02 ,  H01L29/04 ,  H01L29/78 ,  H03K19/0185 ,  G11C7/04 ,  H01L29/786

Abstract: A retention circuit provided in a logic circuit enables power gating. The retention circuit includes a first terminal, a node, a capacitor, and first to third transistors. The first transistor controls electrical connection between the first terminal and an input terminal of the logic circuit. The second transistor controls electrical connection between an output terminal of the logic circuit and the node. The third transistor controls electrical connection between the node and the input terminal of the logic circuit. A gate of the first transistor is electrically connected to a gate of the second transistor. In a data retention period, the node becomes electrically floating. The voltage of the node is held by the capacitor.

公开(公告)号：US09905557B2

公开(公告)日：2018-02-27

申请号：US14445515

申请日：2014-07-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshihiko Saito ,  Kiyoshi Kato ,  Atsuo Isobe

IPC: H01L29/78 ,  H01L27/06 ,  H01L29/40 ,  H01L29/786 ,  H01L27/1156 ,  H01L27/12 ,  G11C16/04 ,  H01L21/02 ,  H01L29/423

CPC classification number: H01L27/0688 ,  G11C16/0433 ,  H01L21/02565 ,  H01L27/1156 ,  H01L27/1203 ,  H01L27/1225 ,  H01L29/408 ,  H01L29/4236 ,  H01L29/78 ,  H01L29/7869 ,  H01L29/78696

Abstract: A connection electrode for connecting a transistor including a semiconductor material other than an oxide semiconductor to a transistor including an oxide semiconductor material is smaller than an electrode of the transistor including a semiconductor material other than an oxide semiconductor that is connected to the connection electrode.

公开(公告)号：US09899533B2

公开(公告)日：2018-02-20

申请号：US14799015

申请日：2015-07-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Atsuo Isobe ,  Yuki Hata ,  Suguru Hondo

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L49/02 ,  H01L27/12 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L27/1255 ,  H01L28/60 ,  H01L29/0692 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/78696

Abstract: A transistor including an oxide semiconductor and having favorable operation characteristics is provided. Further, by using the transistor, a semiconductor having improved operation characteristics can be provided. In planar view, one of a source electrode and a drain electrode of the transistor is surrounded by a ring-shaped gate electrode. Further, in planar view, one of the source electrode and the drain electrode of the transistor is surrounded by a channel formation region. Accordingly, the source electrode is not electrically connected to the drain electrode through a parasitic channel generated in an end portion of an island-shaped oxide semiconductor layer.

公开(公告)号：US09865588B2

公开(公告)日：2018-01-09

申请号：US14724398

申请日：2015-05-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo Isobe

IPC: H01L27/02 ,  H01L27/12 ,  H01L23/60

CPC classification number: H01L27/0266 ,  H01L23/60 ,  H01L27/0288 ,  H01L27/1207 ,  H01L27/1225 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device that is hardly broken is provided. Alternatively, a semiconductor device having high reliability is provided. The semiconductor device includes a first circuit, a second circuit, a first wiring, a second wiring, and a third wiring. The second circuit has a function of protecting the first circuit. The second circuit includes a first transistor including an oxide semiconductor film. The first wiring is electrically connected to the first circuit through the second circuit. The first wiring is electrically connected to the first circuit through the second circuit. The first wiring has a function of inputting a signal. The second wiring is electrically connected to the first circuit. The second wiring is electrically connected to one of a source electrode and a drain electrode of the first transistor. The third wiring is electrically connected to a gate electrode of the first transistor included in the second circuit.

公开(公告)号：US09755084B2

公开(公告)日：2017-09-05

申请号：US13755921

申请日：2013-01-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo Isobe ,  Yasuyuki Arai

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L27/1255

Abstract: A semiconductor device having a novel structure is provided in which a transistor including an oxide semiconductor and a transistor including a semiconductor material which is not an oxide semiconductor are stacked. Further, a semiconductor device in which a semiconductor element and a capacitor are formed efficiently is provided. In a semiconductor device, a first semiconductor element layer including a transistor formed using a semiconductor material which is not an oxide semiconductor, such as silicon, and a second semiconductor element layer including a transistor formed using an oxide semiconductor are stacked. A capacitor is formed using a wiring layer, or a conductive film or an insulating film which is in the same layer as a conductive film or an insulating film of the second semiconductor element layer.

公开(公告)号：US09530852B2

公开(公告)日：2016-12-27

申请号：US14801130

申请日：2015-07-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo Isobe ,  Toshinari Sasaki ,  Junichi Koezuka ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/04 ,  H01L29/08 ,  H01L21/84 ,  H01L27/108 ,  H01L27/115 ,  H01L27/12 ,  H01L49/02 ,  H01L21/425 ,  H01L29/66 ,  H01L21/02 ,  H01L21/265

CPC classification number: H01L29/4238 ,  H01L21/02565 ,  H01L21/265 ,  H01L21/425 ,  H01L21/84 ,  H01L27/1085 ,  H01L27/10876 ,  H01L27/1156 ,  H01L27/1203 ,  H01L27/1225 ,  H01L28/40 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78693

Abstract: It is an object to provide a semiconductor device in which a short-channel effect is suppressed and miniaturization is achieved, and a manufacturing method thereof. A trench is formed in an insulating layer and impurities are added to an oxide semiconductor film in contact with an upper end corner portion of the trench, whereby a source region and a drain region are formed. With the above structure, miniaturization can be achieved. Further, with the trench, a short-channel effect can be suppressed setting the depth of the trench as appropriate even when a distance between a source electrode layer and a drain electrode layer is shortened.

公开(公告)号：US09236428B2

公开(公告)日：2016-01-12

申请号：US14509310

申请日：2014-10-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo Isobe ,  Hiromichi Godo

IPC: H01L29/12 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/06 ,  H01L29/786 ,  H01L29/66 ,  H01L29/78 ,  H01L27/108 ,  H01L27/11

CPC classification number: H01L29/0603 ,  H01L27/10879 ,  H01L27/1104 ,  H01L29/12 ,  H01L29/66742 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/786 ,  H01L2029/7858

Abstract: A structure including an oxide semiconductor layer which is provided over an insulating surface and includes a channel formation region and a pair of low-resistance regions between which the channel formation region is positioned, a gate insulating film covering a top surface and a side surface of the oxide semiconductor layer, a gate electrode covering a top surface and a side surface of the channel formation region with the gate insulating film positioned therebetween, and electrodes electrically connected to the low-resistance regions is employed. The electrodes are electrically connected to at least side surfaces of the low-resistance regions, so that contact resistance with the source electrode and the drain electrode is reduced.

Abstract translation: 一种包括氧化物半导体层的结构，其设置在绝缘表面上并且包括沟道形成区域和一对低电阻区域，沟道形成区域位于其间，覆盖顶表面和侧表面的栅极绝缘膜 所述氧化物半导体层，覆盖所述沟道形成区域的顶表面的栅电极和位于其间的所述栅极绝缘膜的栅电极，以及电连接到所述低电阻区域的电极。 电极电连接到低电阻区域的至少侧面，从而降低与源电极和漏电极的接触电阻。

公开(公告)号：US20150348961A1

公开(公告)日：2015-12-03

申请号：US14724398

申请日：2015-05-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo Isobe

IPC: H01L27/02 ,  H01L23/528 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/0266 ,  H01L23/60 ,  H01L27/0288 ,  H01L27/1207 ,  H01L27/1225 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device that is hardly broken is provided. Alternatively, a semiconductor device having high reliability is provided. The semiconductor device includes a first circuit, a second circuit, a first wiring, a second wiring, and a third wiring. The second circuit has a function of protecting the first circuit. The second circuit includes a first transistor including an oxide semiconductor film. The first wiring is electrically connected to the first circuit through the second circuit. The first wiring is electrically connected to the first circuit through the second circuit. The first wiring has a function of inputting a signal. The second wiring is electrically connected to the first circuit. The second wiring is electrically connected to one of a source electrode and a drain electrode of the first transistor. The third wiring is electrically connected to a gate electrode of the first transistor included in the second circuit.

Abstract translation: 提供几乎不破损的半导体器件。 或者，提供具有高可靠性的半导体器件。 半导体器件包括第一电路，第二电路，第一布线，第二布线和第三布线。 第二电路具有保护第一电路的功能。 第二电路包括包括氧化物半导体膜的第一晶体管。 第一布线通过第二电路与第一电路电连接。 第一布线通过第二电路与第一电路电连接。 第一布线具有输入信号的功能。 第二布线与第一电路电连接。 第二布线电连接到第一晶体管的源电极和漏电极之一。 第三布线电连接到包括在第二电路中的第一晶体管的栅电极。