公开(公告)号：US10084186B2

公开(公告)日：2018-09-25

申请号：US14920650

申请日：2015-10-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro Kawakami ,  Teruaki Ochiai ,  Shuhei Yoshitomi ,  Takuya Hirohashi ,  Mako Motoyoshi ,  Yohei Momma ,  Junya Goto

IPC: H01M4/505 ,  H01M4/36 ,  H01M4/131 ,  H01M4/1391

CPC classification number: H01M4/505 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/366 ,  H01M2220/30

Abstract: To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.

公开(公告)号：US09893200B2

公开(公告)日：2018-02-13

申请号：US14972964

申请日：2015-12-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Junichiro Sakata ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga

IPC: H01L29/04 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/28079 ,  H01L21/28158 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

Abstract: It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).

公开(公告)号：US09881939B2

公开(公告)日：2018-01-30

申请号：US14071932

申请日：2013-11-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro Takahashi ,  Takuya Hirohashi ,  Masashi Tsubuku ,  Noritaka Ishihara ,  Masashi Oota

IPC: H01L29/66 ,  H01L29/04 ,  H01L29/24 ,  G01N23/207 ,  H01L27/12 ,  H01L21/66 ,  G02F1/1368 ,  C23C14/08 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L27/1225 ,  C23C14/086 ,  G01N23/207 ,  G02F1/1368 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L22/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US09583601B2

公开(公告)日：2017-02-28

申请号：US15002826

申请日：2016-01-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasutaka Nakazawa ,  Masami Jintyou ,  Junichi Koezuka ,  Kenichi Okazaki ,  Takuya Hirohashi ,  Shunsuke Adachi

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/473 ,  H01L21/4757

CPC classification number: H01L29/78696 ,  H01L21/32051 ,  H01L21/3213 ,  H01L21/473 ,  H01L21/4757 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: A method for manufacturing a semiconductor device including a transistor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer to form a stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes; and regions in the oxide layer in contact with the source and drain electrodes are heat treated so as to have a low resistivity.

Abstract translation: 提供一种制造包括具有稳定的电气特性或高可靠性的晶体管的半导体器件的方法。 在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成氧化物半导体层; 在氧化物半导体层上形成氧化物层，形成包含氧化物半导体层和氧化物层的层叠氧化膜; 堆叠层氧化膜被加工成预定的形状; 在堆叠层氧化膜上形成含有Ti的导电膜; 蚀刻导电膜以形成源极和漏极; 并且与源极和漏极接触的氧化物层中的区域被热处理以具有低电阻率。

公开(公告)号：US09299855B2

公开(公告)日：2016-03-29

申请号：US14447875

申请日：2014-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Motoki Nakashima ,  Ryosuke Watanabe ,  Masashi Tsubuku

IPC: H01L29/792 ,  H01L29/24 ,  H01L29/51 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/792 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/66969 ,  H01L29/7869

Abstract: A semiconductor device includes a semiconductor layer, a gate electrode overlapping with the semiconductor layer, a first gate insulating layer between the semiconductor layer and the gate electrode, and a second gate insulating layer between the first gate insulating layer and the gate electrode. The first gate insulating layer includes an oxide in which the nitrogen content is lower than or equal to 5 at. %, and the second gate insulating layer includes charge trap states.

Abstract translation: 半导体器件包括半导体层，与半导体层重叠的栅极电极，在半导体层和栅电极之间的第一栅极绝缘层，以及位于第一栅极绝缘层和栅电极之间的第二栅极绝缘层。 第一栅极绝缘层包括其中氮含量低于或等于5at的氧化物。 ％，第二栅极绝缘层包括电荷陷阱状态。

公开(公告)号：US09246011B2

公开(公告)日：2016-01-26

申请号：US14090244

申请日：2013-11-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasutaka Nakazawa ,  Masami Jintyou ,  Junichi Koezuka ,  Kenichi Okazaki ,  Takuya Hirohashi ,  Shunsuke Adachi

IPC: H01L29/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/32051 ,  H01L21/3213 ,  H01L21/473 ,  H01L21/4757 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.

Abstract translation: 提供一种半导体器件，其包括具有稳定的电特性或高可靠性的氧化物半导体的沟道形成区中具有减少的氧空位数的晶体管。 在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成氧化物半导体层; 通过溅射法在氧化物半导体层上形成氧化物层，以形成包含氧化物半导体层和氧化物层的堆叠层氧化膜; 堆叠层氧化膜被加工成预定的形状; 在叠层氧化膜上形成含有Ti作为主要成分的导电膜; 蚀刻导电膜以形成源极和漏极以及背沟道侧的凹陷部; 并且与源极和漏极接触的堆叠层氧化膜的部分通过热处理而变为n型。

公开(公告)号：US08916870B2

公开(公告)日：2014-12-23

申请号：US14305156

申请日：2014-06-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/10 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

公开(公告)号：US11978742B2

公开(公告)日：2024-05-07

申请号：US18137032

申请日：2023-04-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro Takahashi ,  Takuya Hirohashi ,  Masashi Tsubuku ,  Noritaka Ishihara ,  Masashi Oota

IPC: H01L27/12 ,  C23C14/08 ,  G01N23/207 ,  G02F1/1368 ,  H01L21/66 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L27/1225 ,  C23C14/086 ,  G01N23/207 ,  G02F1/1368 ,  H01L22/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US11715801B2

公开(公告)日：2023-08-01

申请号：US17687817

申请日：2022-03-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L21/02 ,  H01L29/66 ,  H01L27/12 ,  H01L29/08 ,  H01L29/10 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696 ,  H01L21/02554

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

公开(公告)号：US11710823B2

公开(公告)日：2023-07-25

申请号：US17852407

申请日：2022-06-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro Kawakami ,  Teruaki Ochiai ,  Shuhei Yoshitomi ,  Takuya Hirohashi ,  Mako Motoyoshi ,  Yohei Momma ,  Junya Goto

IPC: H01M4/505 ,  H01M4/36 ,  H01M4/131 ,  H01M4/1391

CPC classification number: H01M4/505 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/366 ,  H01M2220/30

Abstract: To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.