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41.发明申请公开(公告)号：US20220416123A1
公开(公告)日：2022-12-29
申请号：US17897821
申请日：2022-08-29
Inventor： Kyungwook HWANG , Sungjin KANG , Euijoon YOON , Junsik HWANG , Jongmyeong KIM , Jehong OH , Jungel RYU , Seungmin LEE
Abstract: Provided are a light-emitting diode (LED) device, a method of manufacturing the LED device, and a display apparatus including the LED device. The LED device includes a light-emitting layer having a core-shell structure, a passivation layer provided to cover a portion of a top surface of the first semiconductor layer, a first electrode provided on the light-emitting layer, and a second electrode provided under the light-emitting layer. The light-emitting layer includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first electrode is provided to contact the first semiconductor layer, and the second electrode is provided to contact the second semiconductor layer.
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公开(公告)号：US20220262784A1
公开(公告)日：2022-08-18
申请号：US17667241
申请日：2022-02-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyungwook HWANG , Junsik HWANG , Dongho KIM , Hyunjoon KIM , Joonyong PARK , Seogwoo HONG
Abstract: Provided is a method of fabricating a hybrid element, the method including forming a plurality of first elements on a first substrate, separating a plurality of second elements grown on a second substrate from the second substrate, a material of the second substrate being different from a material of the first substrate, and transferring the plurality of second elements, separated from the second substrate, onto the first substrate, wherein, in the transferring, the plurality of second elements are spaced apart from each other by a fluidic self-assembly method, and wherein each of the plurality of second elements includes a shuttle layer grown on the second substrate, an element layer grown on the shuttle layer, and an electrode layer on the element layer.
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公开(公告)号：US20220122953A1
公开(公告)日：2022-04-21
申请号：US17315596
申请日：2021-05-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyungwook HWANG , Junsik HWANG , Hyunjoon KIM , Joonyong PARK , Seogwoo HONG
Abstract: Provided is a method of manufacturing a micro light emitting device array. The method includes forming a display transfer structure including a transfer substrate and a plurality of micro light emitting devices, where the transfer substrate includes at least two first alignment marks; preparing a driving circuit board, the driving circuit board including a plurality of driving circuits and at least two second alignment marks, arranging the display transfer structure and the driving circuit board to face each other so that the at least two first alignment marks and the at least two second alignment marks face one another and bonding the plurality of micro light emitting devices of the display transfer structure to the plurality of driving circuits.
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公开(公告)号：US20210119079A1
公开(公告)日：2021-04-22
申请号：US16831194
申请日：2020-03-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Junsik HWANG , Sungjin Kang , Kyungwook Hwang , Junhee Choi
IPC: H01L33/20 , H01L33/38 , H01L33/62 , H01L25/075
Abstract: A light-emitting diode (LED) includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first electrode pad, a second electrode pad and a third electrode pad disposed on the second semiconductor layer in a direction from a corner of the second semiconductor layer to an opposite corner of the second semiconductor layer. An LED includes a first electrode pad disposed at a center of the LED and in contact with a P-type semiconductor layer and a second electrode pad in contact with an N-type semiconductor layer, wherein the second electrode pad is disposed a maximum distance away from the first electrode pad on the same surface.
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公开(公告)号：US20210091257A1
公开(公告)日：2021-03-25
申请号：US16822673
申请日：2020-03-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyungwook HWANG , Sungjin KANG , Junsik HWANG , Junhee CHOI
IPC: H01L33/00 , H01L33/62 , H01L33/50 , H01L25/075
Abstract: Provided is a display device including a substrate, a transfer guiding mold provided on the substrate and including a plurality of openings, and a plurality of micro light emitting diodes (LEDs) provided on the substrate in the plurality of openings, wherein a height of the transfer guiding mold is less than twice a height of each of the plurality of micro LEDs.
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Patent Agency Ranking
公开(公告)号：US20160049564A1
公开(公告)日：2016-02-18
申请号：US14656298
申请日：2015-03-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kunmo CHU , Changyoul MOON , Sunghee LEE , Junsik HWANG
CPC classification number: H01L25/50 , H01L23/481 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/24 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/48 , H01L24/73 , H01L24/82 , H01L24/83 , H01L24/92 , H01L24/94 , H01L33/0079 , H01L2224/04026 , H01L2224/05666 , H01L2224/05671 , H01L2224/131 , H01L2224/16225 , H01L2224/24146 , H01L2224/29082 , H01L2224/29083 , H01L2224/29111 , H01L2224/29139 , H01L2224/29155 , H01L2224/32145 , H01L2224/32503 , H01L2224/33181 , H01L2224/48225 , H01L2224/73204 , H01L2224/73217 , H01L2224/73227 , H01L2224/73253 , H01L2224/73259 , H01L2224/73265 , H01L2224/73267 , H01L2224/82101 , H01L2224/83005 , H01L2224/83193 , H01L2224/83204 , H01L2224/8381 , H01L2224/83825 , H01L2224/83948 , H01L2224/92 , H01L2224/9202 , H01L2224/92144 , H01L2224/92244 , H01L2224/94 , H01L2924/00014 , H01L2924/10253 , H01L2924/1033 , H01L2924/12041 , H01L2924/12042 , H01L2924/1461 , H01L2924/15311 , H01L2924/181 , H01L2924/3512 , H01L2933/0066 , H01L2224/83 , H01L2924/014 , H01L21/78 , H01L2224/81 , H01L2224/45099
Abstract: A semiconductor device includes a base substrate and a semiconductor chip on the base substrate, the semiconductor chip including a first layer structure and a second layer structure opposite to the first layer structure, at least one of the first and second layer structures including a semiconductor device portion, and a bonding structure between the first layer structure and the second layer structure, the bonding structure including a silver-tin (Ag—Sn) compound and a nickel-tin (Ni—Sn) compound.
Abstract translation: 半导体器件包括基底基板和基底基板上的半导体芯片，该半导体芯片包括第一层结构和与第一层结构相对的第二层结构，第一和第二层结构中的至少一个包括半导体器件 所述第一层结构和所述第二层结构之间的接合结构，所述接合结构包括银 - 锡（Ag-Sn）化合物和镍 - 锡（Ni-Sn）化合物。
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公开(公告)号：US20250031508A1
公开(公告)日：2025-01-23
申请号：US18908252
申请日：2024-10-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Junsik HWANG , Seogwoo HONG , Kyungwook HWANG
IPC: H01L33/62 , H01L25/075 , H01L27/12
Abstract: A micro light emitting device, a display apparatus including the same, and a method of manufacturing the micro light emitting device are disclosed. The micro light emitting device includes a first type semiconductor layer; a light emitting layer provided on the first type semiconductor layer; a second type semiconductor layer provided on the light emitting layer; one or more first type electrodes provided on the second type semiconductor layer; one or more second type electrodes provided on the second type semiconductor layer and spaced apart from the one or more first type electrodes; and a bonding spread prevention portion provided between the one or more first type electrodes and the one or more second type electrodes.
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公开(公告)号：US20240234384A1
公开(公告)日：2024-07-11
申请号：US18402416
申请日：2024-01-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyungwook HWANG , Youngtek OH , Dongkyun KIM , Dongho KIM , Joonyong PARK , Sanghoon SONG , Minchul YU , Junsik HWANG
IPC: H01L25/075
CPC classification number: H01L25/0753
Abstract: A method of transferring electronic chips includes attaching, to a relay substrate, the electronic chips arranged on a base substrate, separating the electronic chips from the base substrate, wetting a target substrate using a solvent, transferring, to the target substrate, the electronic chips that are attached to the relay substrate, pressing the relay substrate in a thickness direction of the target substrate, and drying the target substrate.
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公开(公告)号：US20240178195A1
公开(公告)日：2024-05-30
申请号：US17793145
申请日：2022-01-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Junsik HWANG , Seogwoo HONG , Kyungwook HWANG , Hyunjoon KIM , Joonyong PARK
IPC: H01L25/075 , H01L25/16 , H01L33/50
CPC classification number: H01L25/0753 , H01L25/167 , H01L33/50
Abstract: According to an aspect of an embodiment, provided is a micro semiconductor chip transferring substrate including: a mold including a plurality of recesses formed to be recessed in a certain depth from an upper surface; and a surface energy reduction pattern formed in region between the plurality of recesses, on the upper surface, the surface energy reduction pattern including a plurality of uneven patterns. When the micro semiconductor chips are aligned by a wet alignment method, by such surface energy reduction pattern, sliding of the micro semiconductor chips toward the inside of the recesses may be improved.
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50.发明公开公开(公告)号：US20230361251A1
公开(公告)日：2023-11-09
申请号：US17900193
申请日：2022-08-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minchul YU , Seogwoo HONG , Kyungwook HWANG , Junsik HWANG , Dongkyun KIM , Hyunjoon KIM
CPC classification number: H01L33/44 , H01L33/005
Abstract: Provided are a semiconductor device including a passivation layer and a method of fabricating an electronic apparatus including the semiconductor device. The semiconductor device includes a semiconductor device layer including at least one electrode provided at an upper portion thereof and a passivation layer at least partially covering the at least one electrode.
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