公开(公告)号：US20200052100A1

公开(公告)日：2020-02-13

申请号：US16526389

申请日：2019-07-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masataka NAKADA ,  Yasuharu HOSAKA

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/24

Abstract: A semiconductor layer containing a metal oxide is formed, a gate insulating layer containing an oxide is formed over the semiconductor layer, and a metal oxide layer is formed over the gate insulating layer. Heat treatment is performed after the metal oxide layer is formed, and the metal oxide layer is removed after the heat treatment is performed. After the metal oxide layer is removed, a gate electrode overlapping with part of the semiconductor layer is formed over the gate insulating layer. Then, a first element is supplied through the gate insulating layer to a region of the semiconductor layer that does not overlap with the gate electrode. Examples of the first element include phosphorus, boron, magnesium, aluminum, and silicon. The steps performed after the metal oxide layer is removed are each preferably performed at a temperature lower than or equal to the temperature of the heat treatment.

公开(公告)号：US20190244981A1

公开(公告)日：2019-08-08

申请号：US16361452

申请日：2019-03-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masahiro KATAYAMA ,  Masataka NAKADA

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/49 ,  H01L27/32

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

公开(公告)号：US20180275474A1

公开(公告)日：2018-09-27

申请号：US15987952

申请日：2018-05-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka NAKADA ,  Masahiro KATAYAMA ,  Seiji YASUMOTO ,  Hiroki ADACHI ,  Masataka SATO ,  Koji KUSUNOKI ,  Yoshiharu HIRAKATA

IPC: G02F1/1362 ,  G06F3/041 ,  G02F1/1333 ,  H01L27/12

CPC classification number: G02F1/136286 ,  G02F1/13338 ,  G06F3/0412 ,  G06F2203/04103 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248 ,  H01L27/1255

Abstract: Provided is a novel display panel that is highly convenient or highly reliable, a novel input/output device that is highly convenient or highly reliable, or a method for manufacturing a novel display panel that is highly convenient or highly reliable. The present inventors conceived a structure including a first intermediate film, a first electrode including a region in contact with the first intermediate film, a pixel that includes a first display element including the first electrode and a pixel circuit electrically connected to the first display element, a signal line electrically connected to the pixel, and a terminal that includes a third conductive film electrically connected to the signal line and a second intermediate film including a region in contact with the third conductive film.

公开(公告)号：US20180247990A1

公开(公告)日：2018-08-30

申请号：US15966640

申请日：2018-04-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuhiro JINBO ,  Kohei YOKOYAMA ,  Yuki TAMATSUKURI ,  Naoto GOTO ,  Masami JINTYOU ,  Masayoshi DOBASHI ,  Masataka NAKADA ,  Akihiro CHIDA ,  Naoyuki SENDA

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L27/3258 ,  H01L51/5253 ,  H01L2251/301 ,  H01L2251/5338

Abstract: To provide a display device with a manufacturing yield and/or a display device with suppressed mixture of colors between adjacent pixels. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, and an adhesive layer. The first insulating layer includes a first opening. The second insulating layer includes a second opening. The first opening and the second opening are provided between the first pixel electrode and the second pixel electrode. In a top view, a periphery of the second opening is positioned on an inner side than a periphery of the first opening. The adhesive layer has a region overlapping with the second insulating layer below the second insulating layer.

公开(公告)号：US20180175322A1

公开(公告)日：2018-06-21

申请号：US15890399

申请日：2018-02-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masataka NAKADA ,  Takayuki ABE ,  Naoyuki SENDA

IPC: H01L51/52 ,  H01L51/00 ,  H01L27/32

Abstract: A flexible device with fewer defects caused by a crack is provided. A flexible device with high productivity is also provided. Furthermore, a flexible device with less display failure even in a high temperature and high humidity environment is provided. A light-emitting device includes a first flexible substrate, a second flexible substrate, a buffer layer, a first crack inhibiting layer, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The buffer layer and the first crack inhibiting layer are provided over the first surface of the first flexible substrate. The buffer layer overlaps with the first crack inhibiting layer. The light-emitting element is provided over the second surface of the second flexible substrate.

公开(公告)号：US20170236846A1

公开(公告)日：2017-08-17

申请号：US15588085

申请日：2017-05-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi OKAZAKI ,  Masataka NAKADA ,  Masahiro KATAYAMA

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/66 ,  H01L29/51 ,  H01L29/24 ,  H01L29/49 ,  H01L29/786 ,  H01L49/02

CPC classification number: H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1259 ,  H01L28/60 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: A semiconductor device includes a transistor and a capacitor. The transistor includes a first conductive film; a first insulating film including a film containing hydrogen; a second insulating film including an oxide insulating film; an oxide semiconductor film including a first region and a pair of second regions; a pair of electrodes; a gate insulating film; and a second conductive film. The capacitor includes a lower electrode, an inter-electrode insulating film, and an upper electrode. The lower electrode contains the same material as the first conductive film. The inter-electrode insulating film includes a third insulating film containing the same material as the first insulating film and a fourth insulating film containing the same material as the gate insulating film. The upper electrode contains the same material as the second conductive film. A fifth insulating film containing hydrogen is provided over the transistor.

公开(公告)号：US20170207247A1

公开(公告)日：2017-07-20

申请号：US15477646

申请日：2017-04-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Daisuke KUROSAKI ,  Masataka NAKADA

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/36 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device including a transistor, the transistor is provided over a first insulating film, and the transistor includes an oxide semiconductor film over the first insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the oxide semiconductor film and the gate electrode, and a source and a drain electrodes electrically connected to the oxide semiconductor film. The first insulating film includes oxygen. The second insulating film includes hydrogen. The oxide semiconductor film includes a first region in contact with the gate insulating film and a second region in contact with the second insulating film. The first insulating film includes a third region overlapping with the first region and a fourth region overlapping with the second region. The impurity element concentration of the fourth region is higher than that of the third region.

公开(公告)号：US20170123251A1

公开(公告)日：2017-05-04

申请号：US15407686

申请日：2017-01-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka NAKADA ,  Hidenori MORI ,  Hisashi OHTANI

IPC: G02F1/1368 ,  G02F1/1335 ,  H01L27/12 ,  G02F1/1333 ,  H01L29/24 ,  H01L29/786

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/133553 ,  G02F1/136204 ,  G02F2001/136222 ,  G02F2201/123 ,  G02F2203/02 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/7869

Abstract: A novel display device capable of adjusting color purity is provided. A novel display device with improved adhesion of a color filter is provided. A novel display device capable of excellent reflective display is provided. The display device includes a transistor, a reflective electrode layer formed on the same surface as a source electrode layer or a drain electrode layer of the transistor, a first insulating layer over the reflective electrode layer, a coloring layer which is over the first insulating layer and overlaps with the reflective electrode layer, a second insulating layer over the coloring layer, and a pixel electrode layer over the second insulating layer. The coloring layer includes at least a first opening and a second opening. The pixel electrode layer is electrically connected to the transistor through the first opening. The second insulating layer is in contact with the first insulating layer in the second opening.

公开(公告)号：US20170104049A1

公开(公告)日：2017-04-13

申请号：US15290085

申请日：2016-10-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daiki NAKAMURA ,  Kohei YOKOYAMA ,  Yasuhiro JINBO ,  Toshiki SASAKI ,  Masataka NAKADA ,  Naoto GOTO ,  Takahiro IGUCHI

IPC: H01L27/32 ,  H01L29/786 ,  G02F1/1343 ,  G02F1/1333 ,  G02F1/1368 ,  H01L27/12 ,  G02F1/1335

CPC classification number: H01L27/3267 ,  G02F1/133345 ,  G02F1/133553 ,  G02F1/134309 ,  G02F1/1368 ,  G02F2201/44 ,  H01L27/124 ,  H01L27/3232 ,  H01L29/7869

Abstract: A novel display device that is highly convenient with low power consumption is provided. The display device includes a display element including a liquid crystal layer, a display element including a light-emitting layer, and a pixel circuit. Electrodes of the display element including the liquid crystal layer and the display element including the light-emitting layer are electrically connected to the pixel circuit. The electrode of the display element including the liquid crystal layer includes a reflective film including an opening. The pixel circuit includes a transistor including a semiconductor film. The number of insulating films in a region overlapping with the opening is smaller than that of insulating films overlapping with the semiconductor film. In addition, the display element including the light-emitting layer includes two light-emitting elements. The number of optical elements overlapping with one light-emitting element is smaller than that of optical elements overlapping with the other light-emitting element.

公开(公告)号：US20170053950A1

公开(公告)日：2017-02-23

申请号：US15346173

申请日：2016-11-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1251 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

Abstract translation: 提供了包括其中导通电流高的氧化物半导体的半导体器件。 该半导体器件包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管; 第一晶体管和第二晶体管具有不同的结构。 此外，第一晶体管和第二晶体管是具有顶栅结构的晶体管。 在每个晶体管的氧化物半导体膜中，杂质元素包含在不与栅电极重叠的区域中。 含有杂质元素的氧化物半导体膜的区域用作低电阻区域。 此外，含有杂质元素的氧化物半导体膜的区域与含有氢的膜接触。 设置在驱动电路部分的第一晶体管包括设置氧化物半导体膜的两个栅电极。