公开(公告)号：US20150030774A1

公开(公告)日：2015-01-29

申请号：US14384495

申请日：2013-02-22

Applicant: Tokyo Electron Limited

Inventor： Takashi Tanaka ,  Yuichiro Inatomi ,  Nobutaka Mizutani ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC: C23C18/16 ,  C23C18/38 ,  C23C18/18

CPC classification number: C23C18/1694 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1676 ,  C23C18/1678 ,  C23C18/1696 ,  C23C18/18 ,  C23C18/1889 ,  C23C18/30 ,  C23C18/38 ,  C25D17/001 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76874 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A plating method can improve adhesivity with an underlying layer. The plating method of performing a plating process on a substrate includes forming a first plating layer 23a serving as a barrier film on a substrate 2; baking the first plating layer 23a; forming a second plating layer 23b serving as a barrier film; and baking the second plating layer 23b. A plating layer stacked body 23 serving as a barrier film is formed of the first plating layer 23a and the second plating layer 23b.

Abstract translation: 电镀方法可以改善与下层的粘合性。 在基板上进行电镀处理的电镀方法包括在基板2上形成作为阻挡膜的第一镀层23a; 烘烤第一镀层23a; 形成用作阻挡膜的第二镀层23b; 并烘烤第二镀层23b。 用作阻挡膜的镀层层叠体23由第一镀层23a和第二镀层23b形成。

公开(公告)号：US11519074B2

公开(公告)日：2022-12-06

申请号：US16914652

申请日：2020-06-29

Applicant: Tokyo Electron Limited

Inventor： Kazutoshi Iwai ,  Nobutaka Mizutani ,  Yuichiro Inatomi ,  Takashi Tanaka

IPC: C23C18/34 ,  C23C18/16

Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.

公开(公告)号：US11230767B2

公开(公告)日：2022-01-25

申请号：US16345320

申请日：2017-08-29

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Kazutoshi Iwai

IPC: C23C18/18 ,  C23C18/31 ,  H01L21/288 ,  H05K3/18

Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portion 32 by performing a catalyst imparting processing on the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. The plating liquid M1 contains an inhibitor which suppresses the plating layer 35 from being precipitated on the non-plateable material portion 31.

公开(公告)号：US10354915B2

公开(公告)日：2019-07-16

申请号：US15077988

申请日：2016-03-23

Applicant: Tokyo Electron Limited

Inventor： Tomohisa Hoshino ,  Masato Hamada ,  Takashi Tanaka ,  Yuichiro Inatomi ,  Yusuke Saito

IPC: B05D3/12 ,  H01L21/70 ,  H01L21/768 ,  H01L21/67 ,  C23C18/18 ,  H01L21/288 ,  B05D1/00 ,  C23C18/16 ,  C23C18/32 ,  C23C18/38 ,  C23C18/50

Abstract: An adhesion layer formed of a thin film can be formed on a surface of a substrate. An adhesion layer forming method of forming the adhesion layer on the substrate includes supplying a coupling agent onto the substrate 2 while rotating the substrate 2. The substrate 2 is rotated at a low speed equal to or less than 300 rpm and the coupling agent diluted with IPA is supplied onto the substrate 2.

公开(公告)号：US20190157083A1

公开(公告)日：2019-05-23

申请号：US16253380

申请日：2019-01-22

Applicant: Tokyo Electron Limited

Inventor： Mitsuaki Iwashita ,  Takeshi Nagao ,  Nobutaka Mizutani ,  Takashi Tanaka ,  Koichi Yatsuda ,  Kazutoshi Iwai ,  Yuichiro Inatomi

IPC: H01L21/033 ,  C23C14/04 ,  C23C18/16 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/311 ,  C23C18/50 ,  C23C18/32 ,  C23C18/18 ,  C23C16/04

Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.

公开(公告)号：US10224208B2

公开(公告)日：2019-03-05

申请号：US15150517

申请日：2016-05-10

Applicant: Tokyo Electron Limited

Inventor： Nobutaka Mizutani ,  Mitsuaki Iwashita ,  Takashi Tanaka

IPC: C23C18/16 ,  C23C18/18 ,  C23C18/32 ,  C23C18/38 ,  C23C18/50 ,  C23C18/54 ,  H01L23/48 ,  H01L21/288 ,  H01L21/768 ,  H01L23/532

Abstract: An electroless plating process is performed on an Al layer, which is made of aluminum or an aluminum alloy, with an electroless plating liquid which is alkaline and contains a complexing agent. A plating method includes preparing a substrate 10 having a surface (for example, bottom surface of TSV 12) at which an Al layer 22 made of aluminum or an aluminum alloy is exposed; forming a zincate film 30 on a surface of the Al layer by performing a zincate treatment on the substrate; and forming a first electroless plating layer (for example, Co barrier layer 14a) on the surface of the Al layer with an electroless plating liquid (for example, Co-based plating liquid) which is alkaline and contains a complexing agent.

公开(公告)号：US10138556B2

公开(公告)日：2018-11-27

申请号：US14404205

申请日：2013-05-27

Applicant: Tokyo Electron Limited

Inventor： Nobutaka Mizutani ,  Takashi Tanaka ,  Mitsuaki Iwashita

IPC: B05D3/10 ,  C23C18/16 ,  H01L21/288 ,  H01L21/768 ,  C23C18/18 ,  C23C18/50

Abstract: A plating method can improve uniformity in a thickness of a plating layer formed on an inner surface of a recess. The plating method includes a loading process of loading the substrate in which the recess is formed into a casing; and a plating process of supplying a plating liquid to the substrate and forming a plating layer having a specific function on an inner surface of the recess. The plating process includes a first plating process of supplying a first plating liquid to the substrate and forming a first plating layer; and a second plating process of supplying a second plating liquid to the substrate and forming a second plating layer on the first plating layer after the first plating process. Further, a concentration of an additive contained in the first plating liquid is different from a concentration of an additive contained in the second plating liquid.

公开(公告)号：US09966306B2

公开(公告)日：2018-05-08

申请号：US15047690

申请日：2016-02-19

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Nobutaka Mizutani ,  Yusuke Saito ,  Kazutoshi Iwai ,  Mitsuaki Iwashita

IPC: H01L21/768 ,  H01L21/67 ,  C23C18/18 ,  C23C18/16 ,  C25D7/12 ,  C23C18/38 ,  C23C18/50

CPC classification number: H01L21/76874 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1696 ,  C23C18/1889 ,  C23C18/38 ,  C23C18/50 ,  C25D7/12 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76898

Abstract: A catalyst adsorbed on a surface of a substrate is bound to the substrate without leaving residues within a recess of the substrate. A catalyst layer forming method includes forming a catalyst layer 22 by supplying a catalyst solution 32 onto a substrate 2 having a recess 2a to adsorb the catalyst 22A onto a surface of the substrate and onto an inner surface of the recess; rinsing the surface of the substrate 2 and an inside of the recess 2a by supplying a rinse liquid; drying the surface of the substrate 2 and the inside of the recess 2a. Further, by supplying a binder solution 34 containing a binder 22B onto the substrate 2, the catalyst 22A on the surface of the substrate 2 is bound to the substrate 2 by the binder 22B.

公开(公告)号：US09922835B2

公开(公告)日：2018-03-20

申请号：US14829740

申请日：2015-08-19

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka

IPC: B05D3/12 ,  H01L21/288 ,  H01L21/768 ,  B05D1/00

CPC classification number: H01L21/288 ,  B05D1/005 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76898

Abstract: A Plating method includes a first plating process S21 of supplying a first plating liquid to a substrate 2 having a recess 12 and forming a first plating layer 13; and a second plating process of supplying a second plating liquid to the substrate 2 and forming a second plating layer 14 on the first plating layer 13 after the first plating process S21. Here, a concentration of an additive contained in the first plating liquid is different from that in the second plating liquid. The first plating process S21 includes a process of forming the first plating layer of a discontinuous film or a particle shape on the substrate 2 by rotating the substrate 2 at a first speed and a process of rotating the substrate 2 at a second speed and at a third speed repeatedly.

公开(公告)号：US09711363B2

公开(公告)日：2017-07-18

申请号：US15098624

申请日：2016-04-14

Applicant: Tokyo Electron Limited

Inventor： Nobutaka Mizutani ,  Mitsuaki Iwashita ,  Takashi Tanaka

IPC: H01L21/288 ,  H01L21/445 ,  H01L21/768 ,  C23C18/18 ,  C23C18/31 ,  H01L21/311 ,  H01L23/532 ,  H01L21/02 ,  C23C18/16 ,  C23C18/32

CPC classification number: H01L21/288 ,  C23C18/1608 ,  C23C18/1886 ,  C23C18/1889 ,  C23C18/31 ,  C23C18/32 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/31133 ,  H01L21/76865 ,  H01L21/76874 ,  H01L21/76879 ,  H01L23/53209

Abstract: A plating method includes forming a catalyst layer 118 on a surface of a substrate including an inner surface of a recess 112; drying the substrate having the catalyst layer formed thereon such that an inside of the recess is dried as well; removing the catalyst layer at least on the surface of the substrate at the outside of the recess by supplying a processing liquid, which is configured to dissolve a material of the surface of the substrate, onto the surface of the substrate while rotating the dried substrate and while preventing or suppressing the processing liquid from being introduced into the dried inside of the recess; and forming a plating layer 119 on the inside of the recess, at which the catalyst layer is not removed, by an electroless plating process.