公开(公告)号：US06996363B2

公开(公告)日：2006-02-07

申请号：US10885669

申请日：2004-07-08

申请人： Kohji Aoki ,  Kohichi Moriyama ,  Motoaki Okitsu ,  Hiroaki Hori ,  Tatsuya Shinkawa ,  Hideki Goto

发明人： Kohji Aoki ,  Kohichi Moriyama ,  Motoaki Okitsu ,  Hiroaki Hori ,  Tatsuya Shinkawa ,  Hideki Goto

IPC分类号： G03G15/20

CPC分类号： G03G15/2042

摘要： A heating device for heating a recording sheet. The heating device has a first heater located within a heating roller. The first heater has a heat distribution effective to form a low temperature region in an axially central portion of the heating roller and a high temperature region in each of axially opposite end portions of the heating roller. There is a second heater located within the heating roller that has a heat distribution effective to form a high temperature region in the axially central portion of the heating roller, a low temperature region in each of the opposite end portions of the heating roller, and a second-level high temperature region in each of axially opposite end portions of the high temperature region, the second-level high temperature region being lower in temperature than the high temperature region.

摘要翻译： 一种用于加热记录纸的加热装置。 加热装置具有位于加热辊内的第一加热器。 第一加热器具有有效地在加热辊的轴向中心部分形成低温区域的热分布和加热辊的每个轴向相对端部分中的高温区域。 位于加热辊内的第二加热器具有有效地在加热辊的轴向中心部分形成高温区域的热分布，加热辊的每个相对端部中的低温区域，以及 第二级高温区域在高温区域的各轴向相对端部中，第二级高温区域的温度低于高温区域。

公开(公告)号：US20050121310A1

公开(公告)日：2005-06-09

申请号：US10725449

申请日：2003-12-03

申请人： Atsushi Yamada ,  Hideki Goto ,  Dennis Chandran ,  Leng See ,  Heng Lee

发明人： Atsushi Yamada ,  Hideki Goto ,  Dennis Chandran ,  Leng See ,  Heng Lee

IPC分类号： C23C14/32 ,  H01L21/56 ,  H01L23/31

CPC分类号： H01L24/32 ,  H01L21/563 ,  H01L23/3171 ,  H01L2224/16225 ,  H01L2224/27013 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83051 ,  H01L2224/83385 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/00

摘要： A selective sputtering method and resulting substrate are provided. This may involve obtaining a substrate and identifying a die placement area and a keep out area of the substrate. A protective area may be formed over the substrate between the die placement area and the keep out area. This may be done using a selective sputtering process. Underfill material may be provided over at least the die placement area of the substrate without the underfill material flowing to the keep out area based on the surface roughness of the keep out area.

摘要翻译： 提供选择性溅射方法和所得到的衬底。 这可能涉及获得衬底并识别管芯放置区域和衬底的保留区域。 可以在管芯放置区域和保留区域之间的衬底上形成保护区域。 这可以使用选择性溅射工艺来完成。 可以至少在衬底的芯片放置区域上提供底部填充材料，而不会基于保留区域的表面粗糙度而将底部填充材料流到保留区域。

公开(公告)号：US06210787B1

公开(公告)日：2001-04-03

申请号：US09326661

申请日：1999-06-07

申请人： Hideki Goto ,  Junji Tanaka

发明人： Hideki Goto ,  Junji Tanaka

IPC分类号： B32B2704

CPC分类号： H05K9/0096 ,  Y10S428/923 ,  Y10S428/93 ,  Y10T428/24802 ,  Y10T428/24995 ,  Y10T428/249952 ,  Y10T428/2976 ,  Y10T428/2978 ,  Y10T428/298

摘要： A transparent electromagnetic wave shield comprising a transparent polymer film and a conductive layer of a linear pattern shape formed on at least one side of said film, wherein the line intervals in said linear pattern are random between 20 &mgr;m and 1 mm.

摘要翻译： 一种透明电磁波屏蔽，其包括形成在所述膜的至少一侧上的透明聚合物膜和线性图案形状的导电层，其中所述线状图案中的线间隔在20μm和1mm之间是随机的。

公开(公告)号：US6023483A

公开(公告)日：2000-02-08

申请号：US48183

申请日：1998-03-26

申请人： Kenji Shimoyama ,  Katsushi Fujii ,  Satoru Nagao ,  Hideki Goto

发明人： Kenji Shimoyama ,  Katsushi Fujii ,  Satoru Nagao ,  Hideki Goto

IPC分类号： H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/223

摘要： A semiconductor light-emitting device comprising a substrate having thereon: a first conductive type first clad layer; an active layer; a second conductive type first clad layer having a stripe region to which a current is injected and the remaining region; a ridge portion comprising: a ridge-shape second conductive type second clad layer formed on the stripe region of the second conductive type first clad layer; a second conductive type contact layer formed on the ridge-shape second conductive type second clad layer; and a protective film formed on the second conductive type first clad layer to cover the remaining region thereof, wherein a part of the second conductive type second clad layer is formed on said protective film, or wherein said contact layer is formed on a substantially whole surface area of said second conductive type second clad layer, or wherein said ridge portion has no protective layer on the side surface thereof.

摘要翻译： 一种半导体发光器件，包括其上具有的衬底：第一导电型第一覆盖层; 活性层 第二导电型第一包层，其具有注入电流的条带区域和剩余区域; 脊部，包括：形成在所述第二导电型第一包层的条带区域上的脊形第二导电型第二包层; 形成在所述脊状第二导电型第二包覆层上的第二导电型接触层; 以及形成在所述第二导电型第一覆盖层上以覆盖其剩余区域的保护膜，其中所述第二导电型第二覆盖层的一部分形成在所述保护膜上，或者其中所述接触层形成在基本上整个表面上 所述第二导电型第二包覆层的面积，或者其中所述脊部在其侧表面上没有保护层。

公开(公告)号：US5920767A

公开(公告)日：1999-07-06

申请号：US681017

申请日：1996-07-22

申请人： Hideyoshi Horie ,  Toshinari Fujimori ,  Satoru Nagao ,  Nobuyuki Hosoi ,  Hideki Goto

发明人： Hideyoshi Horie ,  Toshinari Fujimori ,  Satoru Nagao ,  Nobuyuki Hosoi ,  Hideki Goto

IPC分类号： H01L33/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01L21/00

CPC分类号： H01L33/0062 ,  H01S5/2231 ,  H01S5/209 ,  H01S5/2206 ,  H01S5/2209 ,  H01S5/2275

摘要： The disclosure describes a method of forming a groove in a structure of a semiconductor laser diode, which comprises a crystal growth procedure of epitaxial growth of a core layer comprising MP, wherein M represents one or more of elements belonging to group IIIb of periodic table and an upper layer comprising MAs, wherein M represents one or more of elements belonging to group IIIb of periodic table, successively on (100) surface of MAs crystals in a lower layer comprising MAs; a photolithography and wet etching procedure of, after forming an etching mask on the upper layer, forming an etching window to the etching mask; a first etching procedure of selective etching the upper layer; and a second etching procedure of selective etching other faces except for the face in which (111) face of MP crystals in the core layer is exposed.

摘要翻译： 本发明描述了一种在半导体激光二极管的结构中形成凹槽的方法，其包括包含MP的芯层的外延生长的晶体生长过程，其中M表示属于周期表第IIIb族的元素中的一种或多种， 包含MAs的上层，其中M表示属于元素周期表IIIb族的元素中的一种或多种，​​在包含MA的下层中的MAs晶体的（100）表面上依次连续; 在上层形成蚀刻掩模之后，在蚀刻掩模上形成蚀刻窗口的光刻和湿蚀刻步骤; 选择性蚀刻上层的第一蚀刻步骤; 以及除了芯层中的MP晶体的（111）面露出的面以外的其它面的选择性蚀刻的第二蚀刻工序。

公开(公告)号：US5868834A

公开(公告)日：1999-02-09

申请号：US876228

申请日：1997-06-16

申请人： Kenji Shimoyama ,  Toshinari Fujimori ,  Hideki Goto

发明人： Kenji Shimoyama ,  Toshinari Fujimori ,  Hideki Goto

IPC分类号： C30B25/00 ,  C30B25/02 ,  H01L21/36 ,  H01L21/365 ,  H01S5/347

CPC分类号： B82Y20/00 ,  C23C16/306 ,  C23C16/45527 ,  C30B25/165 ,  C30B29/48 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02551 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/0262 ,  H01S5/347 ,  H01L21/02507 ,  H01S2304/04 ,  H01S5/3018

摘要： The disclosure describes a method of manufacturing a Group II-VI compound semiconductor thin film by a vapor-phase epitaxy using an organic metal compound of Group II element and a hydride or an organic metal compound of Group VI element as the raw material, which comprises repeating alternate introduction of an organic metal compound of Group II element and a halide gas, a halogen gas or a mixture thereof; or adding a halide gas, a halogen gas or a mixture thereof to a gas for vapor-phase epitaxy.

摘要翻译： 本公开内容描述了使用II族元素的有机金属化合物和VI族元素的氢化物或有机金属化合物作为原料，通过气相外延制备II-VI族化合物半导体薄膜的方法，其包括 重复交替引入第II族元素和卤化物气体的有机金属化合物，卤素气体或其混合物; 或将卤化物气体，卤素气体或其混合物添加到用于气相外延的气体中。

公开(公告)号：US5606180A

公开(公告)日：1997-02-25

申请号：US299994

申请日：1994-09-01

申请人： Nobuyuki Hosoi ,  Kenji Shimoyama ,  Hideki Goto

发明人： Nobuyuki Hosoi ,  Kenji Shimoyama ,  Hideki Goto

IPC分类号： C30B25/02 ,  H01L29/205 ,  H01L33/30 ,  H01S5/323 ,  H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/30 ,  C30B25/02 ,  C30B29/40 ,  H01L29/205 ,  H01S5/32325

摘要： The invention includes a Group III-V compound semiconductor that comprises (1) a thin crystal film of A.sub.1.sup.III As.sub.w P.sub.1-w, wherein A.sub.1.sup.III represents a Group III element with Al composition of less than 0.3, 0.5

摘要翻译： 本发明包括III-V族化合物半导体，其包括（1）AlIIIAswP1-w的薄晶膜，其中AlIII表示Al组成小于0.3，0.5 的III族元素 在基板上，形成BIIIAs的薄晶膜，其中BIII表示在A2IIIAsuP1-u膜上形成的Al组成不小于0.45的III族元素，以及C2IIIAszP1-z的薄膜，其中C2III表示III族 元素，0 ，形成在BIIIAs膜上。

公开(公告)号：US5603626A

公开(公告)日：1997-02-18

申请号：US520885

申请日：1995-08-30

申请人： Yoshito Oka ,  Hideki Goto

发明人： Yoshito Oka ,  Hideki Goto

IPC分类号： H01H11/00 ,  H01H85/20 ,  H01R13/11 ,  H01R13/115 ,  H01R31/06 ,  H02G3/16 ,  H01R27/00

CPC分类号： H01R13/113 ,  H01H85/2035 ,  H01H11/0031 ,  H01R31/06

摘要： In order to provide an intermediate terminal for an electrical connection box with an enhanced degree of freedom in terms of a tab inserting direction, an intermediate terminal having a column with hollow end portions and connecting spring portions (5g-5j; 3b, 3c) projecting inwardly into the hollow interior of the end portions so as to allow the insertion and fitting of a tab (1a, 2a) at each end portion, wherein the connecting spring portions (5g-5j; 3b, 3c) at at least one end portion are provided such that a tab (1a, 2a) can be inserted and fitted in at least two different rotational orientations with respect to the longitudinal axis of the column.

摘要翻译： 为了提供一种具有在突片插入方向方面具有增强的自由度的电连接盒的中间端子，具有中空端部的列的中间端子和连接弹簧部分（5g-5j; 3b，3c）突出 向内插入端部的中空内部，以允许在每个端部处插入和装配突片（1a，2a），其中连接弹簧部分（5g-5j; 3b，3c）在至少一个端部 被设置成使得突片（1a，2a）能够相对于柱的纵向轴线以至少两个不同的旋转取向插入和装配。

公开(公告)号：US5369871A

公开(公告)日：1994-12-06

申请号：US167015

申请日：1993-12-16

申请人： Hideki Goto ,  Takafumi Higashio ,  Kenichiro Nakanishi ,  Shunji Taga

发明人： Hideki Goto ,  Takafumi Higashio ,  Kenichiro Nakanishi ,  Shunji Taga

IPC分类号： B60R16/02 ,  H05K13/00 ,  H05K3/00 ,  B23P23/00

CPC分类号： B60R16/0215 ,  H05K13/00 ,  Y10T29/4914 ,  Y10T29/49151 ,  Y10T29/5142 ,  Y10T29/5193

摘要： A device for automatically fixing bus bars and after-fixing bus bars on an insulating board includes a workpiece setting table, on which a bus bar plate and an insulating board are set, is moved towards an upper die and a lower die, which are provided with an insulating board holding section and a bridge cutting and bus bar fixing section. The upper die is moved downwardly and upwardly, so that the bridges are removed from the bus bar plate, and the insulating board is picked up. Thereafter, an insulating board holding board holding the insulating board is moved to the bridge cutting and bus bar fixing section. The upper die is moved downwardly and upwardly again, so that bus bars are fixed onto the insulating board. As the upper die moves downwardly and then upwardly, the bridges are removed from the bus bar plate, and the insulating board and the intermediate product are lifted. Under this condition, the holding board is moved toward the cut punch plate, and the upper die is moved again downwardly and then upwardly, so that the first-fixing group of bus bars are fixed onto the insulating board while the after-fixing group of bus bars are fixed onto the intermediate product, whereby an intermediate product and a complete product are newly formed.

摘要翻译： 用于将母线和后固定母线自动固定在绝缘板上的装置包括：设置汇流条板和绝缘板的工件设定台朝着上模和下模移动，上模和下模设置 具有绝缘板保持部分和桥接切割和母线固定部分。 上模向下和向上移动，从而将母线从汇流条板上取下，并取出绝缘板。 此后，将保持绝缘板的绝缘板保持板移动到桥接切割和汇流条固定部。 上模再次向下和向上移动，使得母线固定在绝缘板上。 当上模向下移动然后向上移动时，将桥从母线板移除，绝缘板和中间产品被提起。 在这种状态下，保持板向切割冲压板移动，并且上模再向下移动然后向上移动，使得母线的第一固定组固定在绝缘板上，而后固定组 母线被固定在中间产品上，由此新形成中间产品和完整的产品。

公开(公告)号：US09040844B2

公开(公告)日：2015-05-26

申请号：US13123814

申请日：2009-12-14

申请人： Hideki Goto

发明人： Hideki Goto

IPC分类号： H05K1/11 ,  H05K3/30 ,  H01R12/70 ,  H01R12/91 ,  H05K3/34

CPC分类号： H05K3/306 ,  H01R12/7082 ,  H01R12/91 ,  H05K3/3447 ,  H05K2201/10189 ,  H05K2201/10303 ,  H05K2201/10424 ,  H05K2201/10537 ,  Y10T29/49149

摘要： A mounting board having a plurality of terminals. The ends of each of the plurality of terminals are inserted into and soldered to through-holes positioned in a printed board, and the terminals are mounted on the printed board. A plurality of pedestals are disposed on one side of the printed board. The pedestals support the terminals. The pedestals are integrally coupled to one another through deformable coupling portions. Mutual displacements among the pedestals are allowed by the coupling portions.

摘要翻译： 具有多个端子的安装板。 将多个端子中的每一个的端部插入并焊接到位于印刷电路板中的通孔中，并将端子安装在印刷电路板上。 多个基座设置在印刷电路板的一侧。 支架支撑端子。 基座通过可变形的联接部分彼此一体地联接。 通过联接部允许基座之间的相互位移。