公开(公告)号：US20100197146A1

公开(公告)日：2010-08-05

申请号：US12656232

申请日：2010-01-21

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

IPC分类号： H01L21/302

CPC分类号： C30B33/02 ,  C30B29/06 ,  C30B33/005 ,  H01L21/3225 ,  H01L21/324 ,  H01L21/67109

摘要： In a method of heat treating a wafer obtained by slicing a silicon single crystal ingot manufactured by the Czochralski method, a rapid heating/cooling heat treatment is carried out by setting a holding time at an ultimate temperature of 1200° C. or more and a melting point of silicon or less to be equal to or longer than one second and to be equal to or shorter than 60 seconds in a mixed gas atmosphere containing oxygen having an oxygen partial pressure of 1.0% or more and 20% or less and argon, and an oxide film having a thickness of 9.1 nm or less or 24.3 nm or more is thus formed on a surface of the silicon wafer.

摘要翻译： 在通过切片由切克劳斯基法制造的硅单晶锭进行切片而得到的晶片的热处理方法中，通过将保持时间设定为1200℃以上的最终温度，进行快速加热/冷却热处理， 在含有氧分压为1.0％以上且20％以下的氧和氩气的混合气体气氛中，硅的熔点以下等于或大于1秒且等于或小于60秒， 因此在硅晶片的表面上形成厚度为9.1nm以下或24.3nm以上的氧化膜。

公开(公告)号：US07699612B2

公开(公告)日：2010-04-20

申请号：US10920442

申请日：2004-08-18

申请人： Yasumasa Akagawa ,  Takayasu Kubo ,  Kazuya Doi

发明人： Yasumasa Akagawa ,  Takayasu Kubo ,  Kazuya Doi

IPC分类号： A61C8/00

CPC分类号： A61C8/0012 ,  A61C8/0006

摘要： A fixing member for an implant which comprises a tube or a pillar made of an hydroxyapatite ceramics at least one part of which is a ceramics porous article consisting essentially of a hydroxyapatite formed by agitation foaming, in which a number of approximately spherical pores mutually contact having pore structures communicated three-dimensionally opened at the contact area and having an averaged porosity of from 65% to 85%. A method for fixing an implant comprising a step of inserting an implant whose at least one part of the periphery is integrated with a hydroxyapatite ceramics into an implant insertion site of an alveolar bone or a gnathic bone. A method for fixing an implant, a fixing member for the implant and an implant composite in order to reinforce an implant insertion site by compensating or regenerating an alveolar bone or a gnathic bone on an implant treatment in dentistry or in oral surgery is obtained.

摘要翻译： 一种用于植入物的固定构件，其包括由羟基磷灰石陶瓷制成的管或柱，其至少一部分是基本上由通过搅拌发泡形成的羟基磷灰石组成的陶瓷多孔制品，其中许多近似球形的孔相互接触， 孔结构在接触面积处三维打开，平均孔隙率为65％至85％。 一种用于固定植入物的方法，包括将其外围的至少一部分与羟基磷灰石陶瓷成一体的植入物插入牙槽骨或牙齿骨的植入物插入部位的步骤。 获得用于固定植入物的方法，用于植入物的固定构件和植入物复合材料，以通过在牙科或口腔手术中的植入物治疗上补偿或再生牙槽骨或牙齿骨来加强植入物插入部位。

公开(公告)号：US20100021734A1

公开(公告)日：2010-01-28

申请号：US12507172

申请日：2009-07-22

申请人： Hideo Uemoto ,  Tomoki Sugino ,  Hiroyuki Goto ,  Taikei Yasumoto

发明人： Hideo Uemoto ,  Tomoki Sugino ,  Hiroyuki Goto ,  Taikei Yasumoto

IPC分类号： C04B38/00 ,  B32B5/16

CPC分类号： C04B38/009 ,  B01J20/048 ,  B01J20/06 ,  B01J20/08 ,  B01J20/10 ,  B01J20/28004 ,  B01J20/2803 ,  B01J20/28092 ,  B01J20/28095 ,  B01J20/282 ,  B01J20/3078 ,  B01J27/1806 ,  B01J35/023 ,  B01J35/109 ,  B01J37/0018 ,  B01J37/0072 ,  B01J2220/52 ,  C04B2111/0081 ,  C07K1/22 ,  Y10T428/2982 ,  C04B35/10 ,  C04B35/14 ,  C04B35/185 ,  C04B35/447 ,  C04B35/48 ,  C04B35/563 ,  C04B35/565 ,  C04B35/584 ,  C04B38/0058 ,  C04B38/0064 ,  C04B38/0605 ,  C04B38/10

摘要： Ceramic particles capable of increasing the reaction area with an eluate, etc. without decreasing the diameter of the particle per se and a producing method thereof are provided. A ceramic particles 10 of the present invention has an average particle diameter of 5 μm or more and 5 mm or less and a plurality of open pores formed at the outer surface, and has two pore size distributions in the measurement by a mercury porosimeter, in which the two pore size distributions includes a first pore size distribution having a peak within a range of 300 nm or more and 20 μm or less and a second pore size distribution having a peak in a range of 200 nm or less.

摘要翻译： 提供能够在不降低颗粒本身直径的情况下用洗脱液等增加反应面积的陶瓷颗粒及其制造方法。 本发明的陶瓷颗粒10的平均粒径为5μm以上且5mm以下，在外表面形成有多个开孔，在水银孔率计的测定中具有两个孔径分布， 其两个孔径分布包括具有在300nm以上至20μm以下的范围内的峰值的第一孔径分布，以及在200nm以下的峰值的第二孔径分布。

公开(公告)号：US20090277377A1

公开(公告)日：2009-11-12

申请号：US12420583

申请日：2009-04-08

申请人： Tadashi OHASHI ,  Seijiro UMEMOTO ,  Go HITOKI

发明人： Tadashi OHASHI ,  Seijiro UMEMOTO ,  Go HITOKI

IPC分类号： C30B15/10 ,  C07F7/10

CPC分类号： C30B11/002 ,  C30B28/06 ,  C30B29/06 ,  C30B35/002 ,  Y10T117/1024

摘要： The crucible for melting silicon according to the present invention is a crucible for melting silicon including a crucible main body including a heat-resistant member, and a protective film formed at least on an inner surface of the crucible main body, in which the protective film has a composition of SiOXNY in which X>0 and Y>0. The crucible for melting silicon according to the present invention has excellent releasability to a silicon block, reduces the amount of impurities dissolved in a silicon melt, and can be produced at low cost. Furthermore, the present invention provides a release agent for use in the production of the crucible for melting silicon.

摘要翻译： 根据本发明的用于熔化硅的坩埚是用于熔化硅的坩埚，其包括包括耐热构件的坩埚主体和至少形成在坩埚主体的内表面上的保护膜，其中保护膜 具有X> 0且Y> 0的SiOXNY的组成。 根据本发明的用于熔化硅的坩埚对于硅块具有优异的可剥离性，减少了溶解在硅熔体中的杂质的量，并且可以以低成本制造。 此外，本发明提供了一种用于生产用于熔化硅的坩埚的脱模剂。

公开(公告)号：US07608553B2

公开(公告)日：2009-10-27

申请号：US11589795

申请日：2006-10-31

申请人： Mitsuhiro Fujita ,  Masaki Irie

发明人： Mitsuhiro Fujita ,  Masaki Irie

IPC分类号： C04B35/505

CPC分类号： C04B35/505 ,  C04B35/50 ,  C04B35/62695 ,  C04B2235/3251 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/604 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/6582 ,  C04B2235/72 ,  C04B2235/9653

摘要： The invention intends to obtain a transparent yttrium oxide sintered body of which in-line transmittance in a visible wavelength region of 400 to 800 nm at a thickness of 1 mm is 60% or more, without using aluminum that readily segregates in grain boundaries of yttrium oxide, without using special raw materials in which a silicon content is particularly reduced and without finely pulverizing raw materials. A transparent yttrium oxide sintered body that contains, with yttrium oxide as a main component, at least either one of tantalum or niobium or both thereof and has the in-line transmittance of 60% or more at a thickness of 1 mm in a visible wavelength region in the range of 400 to 800 nm.

摘要翻译： 本发明旨在获得一种透明的氧化钇烧结体，其中在1mm至5mm的可见光波长范围内的直线透射率为60％以上，而不使用易于在钇的晶界中分离的铝 氧化物，而不使用其中硅含量特别降低的特殊原料，而不需要细粉碎原料。 一种透明氧化钇烧结体，其以氧化钇为主要成分，含有钽或铌中的至少一种或二者，并且在可见波长为1mm的条件下具有60％以上的直线透射率 范围在400至800nm之间。

公开(公告)号：US07588638B2

公开(公告)日：2009-09-15

申请号：US12021828

申请日：2008-01-29

申请人： Toshio Hisaichi

发明人： Toshio Hisaichi

IPC分类号： C30B35/00

CPC分类号： C30B15/305 ,  C30B15/14 ,  C30B29/06 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A single crystal pulling apparatus having a heater 4 melting material silicon by thermal radiation from a cylindrical exothermic part 4a which surrounds a crucible 3 inside a furnace body 2 and an electromagnet 13 which is prepared to surround the furnace body 2 and applies a transverse magnetic field to the silicon liquid melt in the crucible 3 is provided. A length h in a pull-up axis direction in the exothermic part 4a of the heater 4 is arranged to be 0.5 times to 0.9 times an inner diameter of the crucible 3, a first middle position in the pull-up axis direction in the exothermic part 4a is arranged below a second middle position in the pull-up axis direction in the electromagnet 13, and a distance difference d between the first and second middle positions is 0.15 times to 0.55 times the inner diameter R of the crucible 3.

摘要翻译： 具有加热器4的单晶拉制装置，该加热器4通过围绕炉体2内的坩埚3的圆柱形放热部分4a的热辐射熔化材料硅，以及制备为围绕炉体2并施加横向磁场的电磁体13 提供了坩埚3中的硅液体熔体。 加热器4的放热部4a中的上拉轴方向的长度h被配置为坩埚3的内径的0.5倍〜0.9倍，放热轴向上的第一中间位置 部分4a布置在电磁体13的上拉轴方向上的第二中间位置的下方，第一和第二中间位置之间的距离差d为坩埚3的内径R的0.15倍至0.55倍。

公开(公告)号：US20090065812A1

公开(公告)日：2009-03-12

申请号：US12204328

申请日：2008-09-04

申请人： Yoshihisa ABE ,  Jun Komiyama ,  Shunichi Suzuki ,  Hiroshi Oishi ,  Akira Yoshida ,  Hideo Nakanishi

发明人： Yoshihisa ABE ,  Jun Komiyama ,  Shunichi Suzuki ,  Hiroshi Oishi ,  Akira Yoshida ,  Hideo Nakanishi

IPC分类号： H01L29/205

CPC分类号： H01L33/007 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/0254

摘要： Provides is a compound semiconductor substrate about which the thickness of its nitride semiconductor single crystal layer can be made large while the generation of cracks, crystal defects or the like is restrained in the nitride semiconductor single crystal layer. The substrate has a first intermediate layer 110 formed on a Si single crystal substrate 100 having a crystal plane orientation of {111}. In the layer 110, a first metal compound layer 110a made of any one of TiC, TiN, VC and VN, and a second metal compound layer 110b made of any one of compounds which are different from the compound of the first metal compound layer out of TiC, TiN, VC and VN are laminated in this order alternately each other over the Si single crystal.

摘要翻译： 提供了一种化合物半导体衬底，可以使氮化物半导体单晶层的厚度大得多，同时在氮化物半导体单晶层中抑制裂纹，晶体缺陷等的产生。 基板具有形成在晶体取向为{111}的Si单晶基板100上的第一中间层110。 在层110中，由TiC，TiN，VC和VN中的任一种制成的第一金属化合物层110a和由与第一金属化合物层的化合物不同的任何一种化合物制成的第二金属化合物层110b 的TiC，TiN，VC和VN以这种顺序层叠在Si单晶上。

公开(公告)号：US20090038537A1

公开(公告)日：2009-02-12

申请号：US12186063

申请日：2008-08-05

申请人： Toshiro MINAMI

发明人： Toshiro MINAMI

IPC分类号： C30B15/00

CPC分类号： C30B15/22 ,  C30B29/06

摘要： A method of pulling up a silicon single crystal is provided in which a variation rate of a neck diameter is controlled to be within a predetermined range, and a dislocation in a neck is eliminated. When pulling up the silicon single crystal, a single crystal with a predetermined crystal diameter is grown by bringing a seed crystal into contact with a material silicon melt, pulling up the seed crystal, growing the neck, and then increasing a diameter. The above-mentioned neck diameter is increased and decreased to grow the neck, during which a neck diameter variation rate is greater than or equal to 0.05 and less than 0.5, assuming that a value obtained in such a manner that a neck diameter difference (A−B) between adjoining inflection points is divided by a neck length L between the above-mentioned inflection points P1 and P2 is the neck diameter variation rate.

摘要翻译： 提供了提高单晶硅的方法，其中将颈部直径的变化率控制在预定范围内，并且消除颈部的位错。 当拉起硅单晶时，通过使晶种与材料硅熔体接触，拉起晶种，生长颈部，然后增加直径，生长具有预定晶体直径的单晶。 上述颈部直径增加和减小以使颈部生长，其中颈部直径变化率大于或等于0.05且小于0.5，假设以颈部直径差（AB ）在上述拐点P1之间的颈部长度L除以颈部直径变化率。

公开(公告)号：US20090029115A1

公开(公告)日：2009-01-29

申请号：US12173926

申请日：2008-07-16

申请人： Hiroyuki Goto ,  Haruo Murayama ,  Susumu Kimijima ,  Masahiko Ichishima

发明人： Hiroyuki Goto ,  Haruo Murayama ,  Susumu Kimijima ,  Masahiko Ichishima

IPC分类号： B32B3/20 ,  B32B38/04

CPC分类号： B32B38/06 ,  B01L3/5027 ,  B01L3/502707 ,  B01L2200/12 ,  B01L2300/0645 ,  B01L2300/0816 ,  B01L2300/0887 ,  B32B38/145 ,  B32B2037/246 ,  B32B2309/02 ,  B32B2309/10 ,  Y10T156/1064 ,  Y10T428/24562 ,  Y10T428/2457 ,  Y10T428/24744

摘要： A micro channel structure body 10 in which a micro channel 3 having a predetermined cross-sectional shape is formed in a laminate where substrates 1a, 1b, and 1c having formed thereon electrodes 2a, 2b, and 2c made of a thin film are laminated sequentially. The above-mentioned micro channel 3 is formed in a perpendicular direction β perpendicular to a lamination direction α of the above-mentioned laminate. Inner surfaces 3a and 3b of the above-mentioned micro channel 3 have an acute angle θ with respect to the lamination direction α of the above-mentioned laminate. The above-mentioned plurality of electrodes 2a, 2b, and 2c are formed and exposed in the lamination direction α of the inner surfaces 3a and 3b of the above-mentioned micro channel 3.

摘要翻译： 在其中形成有具有预定横截面形状的微通道3的微通道结构体10形成在层压体中，其中形成有由薄膜制成的电极2a，2b和2c的基板1a，1b和1c顺序地层叠 。 上述微通道3形成在与上述层叠体的层叠方向α垂直的垂直方向β上。 上述微通道3的内表面3a和3b相对于上述层叠体的层叠方向α具有锐角θ。 上述多个电极2a，2b和2c以上述微通道3的内表面3a和3b的层叠方向α形成并暴露。

公开(公告)号：US20080237190A1

公开(公告)日：2008-10-02

申请号：US11861947

申请日：2007-09-26

申请人： Tatsuhiko Aoki ,  Motohiro Sei ,  Koji Araki

发明人： Tatsuhiko Aoki ,  Motohiro Sei ,  Koji Araki

IPC分类号： C23F1/00

CPC分类号： C23F1/28 ,  C09K13/08

摘要： A surface cleaning method of a semiconductor wafer heat treatment boat that can prevent metallic contamination to semiconductor wafers and keep down a production time and manufacturing costs of semiconductor wafers by efficiently and easily removing metallic impurities in an oxide film on an SiC boat surface is provided. A surface cleaning method of a semiconductor wafer heat treatment boat according to an embodiment of the present invention is a surface cleaning method of a semiconductor wafer heat treatment boat whose surface is formed of SiC, includes oxidizing the surface of the heat treatment boat by thermal oxidation and etching a portion of the oxide film formed after oxidation is removed.

摘要翻译： 提供了半导体晶片热处理舟的表面清洁方法，其可以通过有效且容易地去除SiC舟状表面上的氧化膜中的金属杂质，从而防止半导体晶片的金属污染并且抑制半导体晶片的生产时间和制造成本。 根据本发明实施例的半导体晶片热处理舟皿的表面清洁方法是由SiC形成表面的半导体晶片热处理舟皿的表面清洁方法，包括通过热氧化来氧化热处理舟皿的表面 并且除去氧化后形成的氧化膜的一部分。