公开(公告)号：US09012329B2

公开(公告)日：2015-04-21

申请号：US13856471

申请日：2013-04-04

申请人： International Business Machines Corporation

发明人： Yann Astier ,  Jingwei Bai ,  Michael F. Lofaro ,  Satyavolu S. Papa Rao ,  Joshua T. Smith ,  Chao Wang

IPC分类号： H01L21/311 ,  H01L21/306

CPC分类号： H01L21/30625 ,  B81B2201/0214 ,  B81C1/00087 ,  G01N33/48721

摘要： A nanogap of controlled width in-between noble metals is produced using sidewall techniques and chemical-mechanical-polishing. Electrical connections are provided to enable current measurements across the nanogap for analytical purposes. The nanogap in-between noble metals may also be formed inside a Damascene trench. The nanogap in-between noble metals may also be inserted into a crossed slit nanopore framework. A noble metal layer on the side of the nanogap may have sub-layers serving the purpose of multiple simultaneous electrical measurements.

摘要翻译： 使用侧壁技术和化学机械抛光产生在贵金属之间的受控宽度的纳米隙。 提供电连接以实现跨越纳米隙的电流测量用于分析目的。 贵金属之间的纳米隙也可以形成在镶嵌槽内。 贵金属之间的纳米隙也可以插入交叉的狭缝纳米孔框架中。 在纳米隙侧面上的贵金属层可以具有用于多次同时电测量的子层。

公开(公告)号：US20150027980A1

公开(公告)日：2015-01-29

申请号：US14385398

申请日：2013-03-14

申请人： KONINKLIJKE PHILIPS N.V.

发明人： Pieter Jan Van Der Zaag ,  Emiel Peeters ,  Roelof Koole ,  Falco Cornelius Marinus Jacobus Maria Van Delft

IPC分类号： G01N33/487

CPC分类号： G01N33/48721 ,  B81C1/00087 ,  B81C2201/0149 ,  B82Y30/00 ,  G03F7/0002

摘要： The invention relates to a method for manufacturing an apparatus for the processing of single molecules. According to this method, a self-assembling resist (155) is deposited on a processing layer (110, PL) and allowed to self-assemble into a pattern of two phases (155a, 155b). One of these phases (155a) is then selectively removed, and at least one aperture is generated in the processing layer (110, PL) through the mask of the remaining resist (155b). Thus apertures of small size can readily be produced that allow for the processing of single molecules (M), for example in DNA sequencing.

摘要翻译： 本发明涉及一种用于制造用于处理单分子的装置的方法。 根据该方法，将自组装抗蚀剂（155）沉积在处理层（110，PL）上并允许自组装成两相（155a，155b）的图案。 然后选择性地去除这些相（155a）中的一个，并且通过剩余的抗蚀剂（155b）的掩模在处理层（110，PL）中产生至少一个孔。 因此，容易产生允许单分子（M）加工的小尺寸孔，例如在DNA测序中。

公开(公告)号：US20150024605A1

公开(公告)日：2015-01-22

申请号：US14330662

申请日：2014-07-14

申请人： CANON KABUSHIKI KAISHA

发明人： Seiko Minami ,  Toshiyasu Sakai

IPC分类号： H01L21/3065

CPC分类号： B81C1/00587 ,  B41J2/14145 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2002/14467 ,  B81B2201/052 ,  B81C1/00087 ,  B81C2201/0132 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116

摘要： A substrate processing method for forming a through-hole in a substrate by reactive ion etching includes preparing a substrate that has a first surface and a second surface and on the first surface side of which a first layer and a second layer are disposed, the second surface being on the opposite side to the first surface, the second layer covering the first layer; and performing reactive ion etching on the substrate from the second surface to form a through-hole extending through the substrate from the first surface to the second surface, the reactive ion etching being performed to reach the first layer. The etching rate of the second layer for the reactive ion etching is lower than that of the first layer.

摘要翻译： 用于通过反应离子蚀刻在衬底中形成通孔的衬底处理方法包括制备具有第一表面和第二表面的衬底，其第一表面侧上设置有第一层和第二层，第二层 表面位于与第一表面相反的一侧，第二层覆盖第一层; 以及从所述第二表面在所述衬底上进行反应离子蚀刻，以形成从所述第一表面延伸穿过所述衬底到所述第二表面的通孔，进行所述反应离子蚀刻以到达所述第一层。 用于反应离子蚀刻的第二层的蚀刻速率低于第一层的蚀刻速率。

公开(公告)号：US20140319339A1

公开(公告)日：2014-10-30

申请号：US14124434

申请日：2012-06-06

申请人： Adam R. Hall ,  Jijin Yang ,  David C. Ferranti ,  Colin Sanford

发明人： Adam R. Hall ,  Jijin Yang ,  David C. Ferranti ,  Colin Sanford

IPC分类号： H01J37/305 ,  G01N15/10 ,  H01J37/26

CPC分类号： H01J37/3056 ,  B81C1/00087 ,  G01N15/10 ,  G01N33/48721 ,  G01N2015/0065 ,  H01J37/261 ,  Y10S977/924 ,  Y10T156/1056

摘要： In one aspect, methods of nanopore formation in solid state membranes are described herein, In some embodiments, a method of forming an aperture comprises providing at least one solid state membrane in a chamber, selecting a first dose of ions sufficient to provide a first aperture of predetermined diameter through the membrane and exposing a surface of the membrane at a first location to the first dose of ions in a focused ion beam having a focal point of diameter less than or equal to about 1 nm to remove material from the membrane at the first location thereby providing the first aperture having the predetermined diameter or substantially the predetermined diameter.

摘要翻译： 在一个方面，本文描述了固态膜中纳米孔形成的方法。在一些实施方案中，形成孔的方法包括在室中提供至少一个固态膜，选择足以提供第一孔的第一剂量离子 具有预定直径的膜，并且在第一位置处将膜的表面暴露于具有直径小于或等于约1nm的焦点的聚焦离子束中的第一剂量的离子，以在 第一位置由此提供具有预定直径或基本上预定直径的第一孔。

公开(公告)号：US20140202453A1

公开(公告)日：2014-07-24

申请号：US14225285

申请日：2014-03-25

申请人： STMicroelectronics S.r.l.

发明人： Angelo Antonio Merassi ,  Angelo Pesci ,  Benedetto Vigna ,  Ernestino Galeazzi ,  Marco Mantovani

IPC分类号： A61M15/00

CPC分类号： A61M15/009 ,  B05B1/14 ,  B05B17/0638 ,  B05D7/00 ,  B81B2201/058 ,  B81B2203/0127 ,  B81C1/00087 ,  Y10T29/49401

摘要： A process for manufacturing a membrane of nozzles of a spray device, comprising the steps of laying a substrate, forming a membrane layer on the substrate, forming a plurality of nozzles in the membrane layer, forming a plurality of supply channels in the substrate, each supply channel being substantially aligned in a vertical direction to a respective nozzle of the plurality of nozzles and in direct communication with the respective nozzle.

摘要翻译： 一种喷雾装置的喷嘴膜的制造方法，其特征在于，包括以下步骤：在所述基材上形成膜层，在所述膜层上形成膜层，在所述膜层中形成多个喷嘴，在所述基材中形成多个供给流路， 供应通道在垂直方向上基本上对准多个喷嘴中的相应喷嘴并与相应喷嘴直接连通。

公开(公告)号：US08721910B2

公开(公告)日：2014-05-13

申请号：US13754510

申请日：2013-01-30

申请人： STMicroelectronics S.r.l.

发明人： Angelo Antonio Merassi ,  Angelo Pesci ,  Benedetto Vigna ,  Ernestino Galeazzi ,  Marco Mantovani

IPC分类号： B44C1/22

CPC分类号： A61M15/009 ,  B05B1/14 ,  B05B17/0638 ,  B05D7/00 ,  B81B2201/058 ,  B81B2203/0127 ,  B81C1/00087 ,  Y10T29/49401

摘要： A process for manufacturing a membrane of nozzles of a spray device, comprising the steps of laying a substrate, forming a membrane layer on the substrate, forming a plurality of nozzles in the membrane layer, forming a plurality of supply channels in the substrate, each supply channel being substantially aligned in a vertical direction to a respective nozzle of the plurality of nozzles and in direct communication with the respective nozzle.

摘要翻译： 一种喷雾装置的喷嘴膜的制造方法，其特征在于，包括以下步骤：在所述基材上形成膜层，在所述膜层上形成膜层，在所述膜层中形成多个喷嘴，在所述基材中形成多个供给流路， 供应通道在垂直方向上基本上对准多个喷嘴中的相应喷嘴并与相应喷嘴直接连通。

公开(公告)号：US08641171B2

公开(公告)日：2014-02-04

申请号：US13484117

申请日：2012-05-30

申请人： Gregory DeBrabander ,  Mark Nepomnishy

发明人： Gregory DeBrabander ,  Mark Nepomnishy

IPC分类号： B41J2/135

CPC分类号： B41J2/161 ,  B41J2/162 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1642 ,  B81B2201/052 ,  B81C1/00087

摘要： Fluid ejection nozzles having a tapered section leading to a straight walled bore are described. Both the tapered section of the nozzle and the straight walled bore are formed from a single side of semiconductor layer so that the tapered section and the bore are aligned with one another, even when an array of nozzles are formed across a die and multiple dies are formed on a semiconductor substrate.

摘要翻译： 描述了具有导向直壁的锥形部分的流体喷射嘴。 喷嘴的锥形部分和直壁孔均由半导体层的单侧形成，使得锥形部分和孔彼此对准，即使在模具之间形成喷嘴阵列并且多个模具是 形成在半导体衬底上。

公开(公告)号：US08633553B2

公开(公告)日：2014-01-21

申请号：US13190254

申请日：2011-07-25

申请人： Marco Ferrera ,  Matteo Perletti ,  Igor Varisco ,  Luca Zanotti

发明人： Marco Ferrera ,  Matteo Perletti ,  Igor Varisco ,  Luca Zanotti

IPC分类号： H01L29/84 ,  H01L21/00

CPC分类号： B81C1/00119 ,  B01D67/0062 ,  B01D71/02 ,  B01D2325/021 ,  B01D2325/028 ,  B01L3/502707 ,  B01L3/502753 ,  B01L2300/0681 ,  B81B2201/10 ,  B81C1/00071 ,  B81C1/00087 ,  B81C2201/0133 ,  B81C2201/0157 ,  F04B19/006

摘要： A process for manufacturing a micromechanical structure envisages: forming a buried cavity within a body of semiconductor material, separated from a top surface of the body by a first surface layer; and forming an access duct for fluid communication between the buried cavity and an external environment. The method envisages: forming an etching mask on the top surface at a first access area; forming a second surface layer on the top surface and on the etching mask; carrying out an etch such as to remove, in a position corresponding to the first access area, a portion of the second surface layer, and an underlying portion of the first surface layer not covered by the etching mask until the buried cavity is reached, thus forming both the first access duct and a filter element, set between the first access duct and the same buried cavity.

摘要翻译： 微机械结构的制造方法设想：在半导体材料体内形成通过第一表面层从主体顶表面分离的掩埋腔; 以及形成用于在所述掩埋腔和外部环境之间流体连通的进入管。 该方法设想：在第一进入区域的顶表面上形成蚀刻掩模; 在顶表面和蚀刻掩模上形成第二表面层; 进行蚀刻，以在对应于第一进入区域的位置中移除第二表面层的一部分，以及未被蚀刻掩模覆盖的第一表面层的下面部分，直到达到掩埋空腔，因此 形成第一进入管道和过滤元件，设置在第一进入管道和相同的掩埋空腔之间。

公开(公告)号：US20140004300A1

公开(公告)日：2014-01-02

申请号：US13555251

申请日：2012-07-23

申请人： Jingwei Bai ,  Stefan Harrer ,  Stanislav Polonsky ,  Stephen M. Rossnagel

发明人： Jingwei Bai ,  Stefan Harrer ,  Stanislav Polonsky ,  Stephen M. Rossnagel

IPC分类号： B32B3/10

CPC分类号： B81C1/00087 ,  B81B2201/058 ,  H01L21/0337 ,  Y10T428/24322

摘要： For a cross slit structure that contains a nanopore, a layer is produced including a first spacer that penetrates through the layer. A subsequent layer over, and in direct contact with, the layer is also produced. The subsequent layer includes a second spacer penetrating through the subsequent layer. The first spacer and the second spacer are selectively etched away, creating a first slit and a second slit. Respective projections of these slits are crossing one another at an angle. At such a crossing an opening is formed which provides for fluid connectivity through the two layers.

摘要翻译： 对于包含纳米孔的交叉狭缝结构，产生包括穿透层的第一间隔物的层。 还产生了与层直接接触的后续层。 随后的层包括贯穿后续层的第二间隔物。 选择性地蚀刻掉第一间隔物和第二间隔物，形成第一狭缝和第二狭缝。 这些狭缝的各个投影以一定角度相互交叉。 在这样一个交叉口处，形成一个开口，其提供通过两层的流体连通性。

公开(公告)号：US08398877B2

公开(公告)日：2013-03-19

申请号：US12533449

申请日：2009-07-31

申请人： Stuart Ross Wenham ,  Alison Lennon ,  Roland Yudadibrata Utama ,  Anita Wing Yi Ho-Baillie

发明人： Stuart Ross Wenham ,  Alison Lennon ,  Roland Yudadibrata Utama ,  Anita Wing Yi Ho-Baillie

IPC分类号： B44C1/22 ,  B29D11/00

CPC分类号： H01L31/18 ,  B81C1/00087 ,  H01L31/04

摘要： A method is provided for forming an opening in a layer of a selected material. The method comprises, forming a polymer resist layer over said selected material and plasticising areas of the resist where openings are to be formed. The plasticising is performed by depositing a first solution onto the surface of said polymer resist layer, where the first solution is a plasticiser selected to increase permeability of the polymer resist layer to a second solution, in an area which has absorbed the first solution. The second solution is selected to be an etchant or solvent for the selected material. After the resist layer has been selectively plasticised, it is contacted with the second solution, which permeates the polymer resist layer in the area of increased permeability and forms an opening in the selected material.

摘要翻译： 提供一种用于在所选材料的层中形成开口的方法。 该方法包括：在所述选择的材料上形成聚合物抗蚀剂层和在其上形成开口的抗蚀剂的增塑区域。 通过将第一溶液沉积到所述聚合物抗蚀剂层的表面上，其中第一溶液是被选择用于在吸收第一溶液的区域中增加聚合物抗蚀剂层到第二溶液的渗透性的增塑剂来进行增塑。 第二溶液被选择为所选材料的蚀刻剂或溶剂。 在抗蚀剂层已经选择性塑化之后，它与第二溶液接触，第二溶液在渗透性增加的区域中渗透聚合物抗蚀剂层，并在所选择的材料中形成开口。